Recent advances in the production of CdZnTe using the high pressure Bridgman growth process now make it possible to design and fabricate complex X-ray sensorarrays on large monolithic substrates. These solidstate io...
Recent advances in the production of CdZnTe using the high pressure Bridgman growth process now make it possible to design and fabricate complex X-ray sensorarrays on large monolithic substrates. These solidstate ionization devices have the advantages of improved spatial and energy resolution, and produce significantly higher signals than competitive scintillator-photodiode systems. We have fabricated a number of linear and areal monolithic arrays in our laboratory using vacuum deposited contacts on such material with good success. These arrays operate in a pulse counting mode using hybrid and surface mount circuitry mounted in close proximity to the arrays. Linear devices with pitches of less than 0.8 mm and with 32 elements per substrate have been used for very wide dynamic range radioscopy with excellent results. Images are presented which demonstrate dynamic range in excess of 500:1 and Nyquist limited resolution at diagnostic X-ray energies for a wide variety of samples. Preliminary results demonstrate that the arrays can be used for energy selective radioscopy permitting the identification of differing materials within the image by approximate atomic number. Systems using areal arrays also have been evaluated as radiation cameras and demonstrate good spatial and energy resolution. Examples of data taken with a pin-hole collimator show the ability to distinguish source distributions by energy as well as location and intensity. Ongoing work in the improvement of spatial and energy resolution and the fabrication of larger arrays is discussed.
This paper focuses on high speed electronic/electro-optic camera development by the Applied Physics Experiments and Imaging Measurements Group (P-15) of Los Alamos National Laboratory's Physics Division over the l...
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ISBN:
(纸本)0819415979
This paper focuses on high speed electronic/electro-optic camera development by the Applied Physics Experiments and Imaging Measurements Group (P-15) of Los Alamos National Laboratory's Physics Division over the last two decades. The evolution of TV and image intensifier sensors and fast readout fast shuttered cameras are discussed. Their use in nuclear, military, and medical imaging applications are presented. Several salient characteristics and anomalies associated with single-pulse and high repetition rate performance of the cameras/sensors are included from earlier studies to emphasize their effects on radiometric accuracy of electronic framing cameras. The Group's test and evaluation capabilities for characterization of imaging type electro-optic sensors and sensor components including Focal Plane arrays, gated Image Intensifiers, microchannel plates, and phosphors are discussed. Two new unique facilities, the High Speed solidstate Imager Test Station and the Electron Gun Vacuum Test Chamber are described. A summary of the Group's current and developmental camera designs and R&D initiatives are included.
The development and implementation are described of the time of flight validation system, a system for the automated diagnosis of a large-scale nuclear physics detector. The diagnostic system is multi-leveled, combini...
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The development and implementation are described of the time of flight validation system, a system for the automated diagnosis of a large-scale nuclear physics detector. The diagnostic system is multi-leveled, combining a single monitoring level based on statistical methods with two model-based diagnostic levels, one operating on structural information and the other using both structural and behavioral models. The later diagnostic level uses a qualitative data model of the detector to provide evidence that is mapped on a continuous basis from observation values to belief in component failure hypotheses. The general architecture is scalable.< >
This paper describes the methodology, which is used in IMEC for the realization of very high resolution linear image sensors. The key elements in design and processing are the use of the DEPLI-sensor principle, a quad...
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The proceedings contain 24 papers. The topics discussed include: the solidstate image sensor's contribution to the development of silicon technology;CCD charge collection efficiency and the photon transfer techni...
The proceedings contain 24 papers. The topics discussed include: the solidstate image sensor's contribution to the development of silicon technology;CCD charge collection efficiency and the photon transfer technique;high density frame transfer image sensors with vertical anti-blooming;advances in CCD technology;digital charge coupled device (CCD) camera system architecture;backside charging of the CCD;large area CCD image sensors for scientific applications;enhancement of x-ray performance with new GEC charged coupled devices (CCD);simplified technique of hologram generation and transmission;and performance analysis of the photon-counting image acquisition system.
Programs in development for the near future will require pointing sensors with accuracies in the region of 1 arc-sec and sub-arc-sec stability. The Advanced X-Ray Astronomical Facility, Annular Suspension Pointing Sys...
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The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photod...
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The development of a high-sensitivity 320 X 244 element MOS area sensor and a novel fixed pattern noise (FPN) suppressing circuit are reported in this paper. The new device incorporates p/sup +/-n/sup +/ high-C photodiodes and double-diffused sense lines. The p/sup +/-n/sup +/ high-C photodiodes provide a large dynamic range and a large saturation signat of 1.4 /spl mu/A with 6-1x W-lamp illumination. The double-diffused sense lines are introduced to vastly improve blooming characteristics, making use of a built-in potential barrier. FPN is proved to stem mainly from inversion charge variations through horizontal switching MOS gate capacitances. A simple high-performance FPN suppressing circuit is proposed which realizes high signal-to-noise (S/N) ratios of more than 68 dB at saturation. The new sensor is tested in a high-sensitivity black-and-white VTR hand-held camera and will find broad applications.
A solidstate (Charge Coupled Device) imaging system is described which satisfies the requirement for multispectral, high resolution, real time imagery. The system, using an earth resources survey satellite as its pla...
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Recent developments pertaining to solidstate image sensors are reviewed. Advances in signal processing are discussed and characteristics and performance of typical sensorarrays are presented. New and novel applicati...
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Recent developments pertaining to solidstate image sensors are reviewed. Advances in signal processing are discussed and characteristics and performance of typical sensorarrays are presented. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control. The basic device consists of a silicon chip containing a row of photodiodes and a parallel shift register. Connected to each stage of the shift register is the gate of an MOS switch which couples the adjacent photodiode to a common video line. Both linear and area arrays have emerged from the development stage. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control are described and illustrated.
Recent developments pertaining to solidstate image sensors are reviewed. Advances in signal processing are discussed and characteristics and performance of typical sensorarrays are presented. New and novel applicati...
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Recent developments pertaining to solidstate image sensors are reviewed. Advances in signal processing are discussed and characteristics and performance of typical sensorarrays are presented. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control. The basic device consists of a silicon chip containing a row of photodiodes and a parallel shift register. Connected to each stage of the shift register is the gate of an MOS switch which couples the adjacent photodiode to a common video line. Both linear and area arrays have emerged from the development stage. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control are described and illustrated.
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