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中国光学学会2010年光学大会

作者：王振林 Department of Physics and National Laboratory of Solid State Microstructures Nanjing University

Recent research effort towards fabricating novel metal nanoparticles （NPs） and their ordered arrays have been motivated by the emergence of *** particular,tuning the size,morphology,composition,and the separation of metal NPs has allowed us to engineer both individual nanoparticles and collective properties of plasmonic crystals for specific *** we present our recent development of bottom-up growth methods and demonstrate convenience for the preparation of such plasmonic *** implementation of physical,chemical,or electrochemical deposition of a metal in combination with micromolding on two-dimensional colloidal crystals,ordered metallic NPs with a variety of morphologies can be created with a nanometer spatial tuning *** prepared novel plasmonic crystals could find applications in optics,optoelectronics,materials science,sensing and biophysics.

关键词： Surface plasmons plasmonic crystal colloidal crystal light transmission resonance plasmonic sensor

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Transition Region and Coronal Explorer Mission

Transition Region and Coronal Explorer Mission

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IEEE Conference on Aerospace applications

作者： I.J. Burt Goddard Space Flight Center NASA Greenbelt MD USA

The Transition Region and Coronal Explorer (TRACE) mission is the fourth mission in the Small Explorer (SMEX) program series at the National Aeronautics and Space Administration's Goddard Space Flight Center. The primary objective of the TRACE mission is to explore the connections between the fine scale magnetic fields in the solar surface and features in the solar photosphere, chromosphere, transition region, and corona. The TRACE spacecraft, including the instrument, weighs 250 kilograms, uses 200 watts of power, and will cost approximately 35 million dollars for the entire mission. It will launch into a Sun-synchronous Low Earth Orbit (LEO) in September 1997 and collect movie-like images of the Sun with one are second spatial and 1 second temporal resolution; these images will be made available on the Internet daily. This paper shows NASA's approach to small spacecraft development It discusses some trades in the design of each subsystem to accommodate instrument and spacecraft heritage as well as new mission requirements. Topics include: a solid state Command and Data Handling (C&DH) system, solid state memory using 20 Megabyte modules approximately 1"/spl times/1"/spl times/0.2" each; a fully digital Attitude Control System (ACS); a guide telescope fine error sensor for spacecraft attitude and control as well as image motion compensation to better than are second levels. Adaptations in ground systems and operations are also included as well as the systems engineering approach.

关键词： Space vehicles Instruments Low earth orbit satellites solid state circuits Space missions Magnetic fields Corona Costs Sun Spatial resolution

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Single-photon sampling architecture for solid-state imaging sensors

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PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED stateS OF AMERICA 2013年第30期110卷 E2752-E2761页

作者： van den Berg, Ewout Candes, Emmanuel Chinn, Garry Levin, Craig Olcott, Peter Demetri Sing-Long, Carlos Stanford Univ Dept Math Stanford CA 94305 USA Stanford Univ Dept Stat Stanford CA 94305 USA Stanford Univ Dept Elect Engn Stanford CA 94305 USA Stanford Univ Dept Radiol Stanford CA 94305 USA Stanford Univ Dept Phys Stanford CA 94305 USA Stanford Univ Dept Bioengn Stanford CA 94305 USA Stanford Univ Inst Computat & Math Engn Stanford CA 94305 USA

Advances in solid-state technology have enabled the development of silicon photomultiplier sensor arrays capable of sensing individual photons. Combined with high-frequency time-to-digital converters (TDCs), this technology opens up the prospect of sensors capable of recording with high accuracy both the time and location of each detected photon. Such a capability could lead to significant improvements in imaging accuracy, especially for applications operating with low photon fluxes such as light detection and ranging and positron-emission tomography. The demands placed on on-chip readout circuitry impose stringent trade-offs between fill factor and spatiotemporal resolution, causing many contemporary designs to severely underuse the technology's full potential. Concentrating on the low photon flux setting, this paper leverages results from group testing and proposes an architecture for a highly efficient readout of pixels using only a small number of TDCs. We provide optimized design instances for various sensor parameters and compute explicit upper and lower bounds on the number of TDCs required to uniquely decode a given maximum number of simultaneous photon arrivals. To illustrate the strength of the proposed architecture, we note a typical digitization of a 60 x 60 photodiode sensor using only 142 TDCs. The design guarantees registration and unique recovery of up to four simultaneous photon arrivals using a fast decoding algorithm. By contrast, a cross-strip design requires 120 TDCs and cannot uniquely decode any simultaneous photon arrivals. Among other realistic simulations of scintillation events in clinical positron-emission tomography, the above design is shown to recover the spatiotemporal location of 99.98% of all detected photons.

关键词： multiplexing single-photon detection superimposed codes

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Direct conversion CdZnTe and CdTe detectors for digital mammography

Direct conversion CdZnTe and CdTe detectors for digital mamm...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： S. Yin T.O. Tumer D. Maeding J. Mainprize G. Mawdsley M.J. Yaffe F. Gordon W.J. Hamilton NOVA Research and Development Inc. CA USA Innovative Design Dana Point CA USA Sunnybrook & Women's College Health Sciences Centre University of Toronto Toronto ONT Canada Raytheon Systems Company CA USA

Hybrid CdZnTe and CdTe pixel detector arrays that convert X-rays directly into charge signals are under development at Nova for applications to digital mammography. CdZnTe and CdTe have superior X-ray conversion efficiency compared to either emulsion based film, phosphor-based detectors or other low-Z, solid-state detectors such as silicon. In this paper, latest results from thin (0.15 to 0.2 mm) CdZnTe and CdTe detectors will be presented in terms of MTF, DQE and phantom images. Single crystal CdZnTe detectors yield better results in DQE as well as phantom images, compared to the poly-crystal CdZnTe detectors. This is due to the non-uniformities in the poly-crystal that degrade the charge transport properties. Because of the charge-coupling limitation of the readout ASIC that was originally designed for Si detectors, the detector is biased to collect holes from the front side. This charge collection mode limits the CdZnTe detector performance. Their DQE measurements yield 25% and 65% for the poly-crystal and single-crystal CdZnTe detectors respectively. Poly-crystal CdTe test detectors were also hybridized to the same type charge readout chip. Since CdTe has much longer hole-propagation lengths compared to CdZnTe, it shows better performance in the hole-collecting mode. However, severe polarization effect degrades performance of the present device. Excellent images were also obtained from the CdTe detectors. Future work to redesign the readout ASIC and thus improve the detector performance is discussed. applications to industrial imaging such as Non-Destructive Evaluation (NDE) and Non-Destructive Inspection (NDI) are also discussed.

关键词： Mammography X-ray detection X-ray detectors Imaging phantoms Degradation Application specific integrated circuits sensor arrays Image converters Semiconductor films solid state circuits

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Inter-pixel cross-talk as background to two-photon interference effects in SPAD arrays

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JOURNAL OF INSTRUMENTATION 2024年第12期19卷 P12015页

作者： Kulkov, Sergei Potuckova, Tereza Bernasconi, Ermanno Bruschini, Claudio Milanese, Tommaso Charbon, Edoardo Shawkat, Mst Shamim Ara Nomerotski, Andrei Svihra, Peter Czech Tech Univ Fac Nucl Sci & Phys Engn Beehova 7 Prague Czech Republic Ecole Polytech Fed Lausanne EPFL Adv Quantum Architecture Lab Rue Maladiere 71 Neuchatel Switzerland Florida Int Univ Dept Elect & Comp Engn 10555 West Flagler St Miami FL 10555 USA Czech Acad Sci Dept Astroparticle Phys Inst Phys Slovance 1999-2 Prague Czech Republic Czech Acad Sci Dept Detector Dev & Data Proc Inst Phys Slovance 1999-2 Prague Czech Republic

Cross-talk is a well-known feature of single-photon avalanche detectors. It is especially important to account for this effect in applications involving temporal coincidences of two or more photons registered by the sensor since in this case the cross-talk may mimic the useful signal. In this work, we characterize the cross-talk of the LinoSPAD2 detector, as well as perform joint measurements of the cross-talk and Hanbury Brown-Twiss two-photon interference, comparing and cross-calibrating both effects. With a median dark count rate of 125 cps/pixel, we report the average cross-talk probability of 0.22% for the nearest neighbor and also observe a long-range cross-talk of the order 2 10(-5)% for channels separated by up to 20 pixels.

关键词： Timing detectors Interferometry Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc) Timing detectors Interferometry

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ARCADIA MAPS process qualification through the electrical characterization of passive pixel arrays

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JOURNAL OF INSTRUMENTATION 2023年第2期18卷 C02045页

作者： Corradino, T. Betta, G. F. Dalla Neubuser, C. Pancheri, L. Univ Trento Dept Ind Engn Via Sommar 9 Trento Italy TIFPA INFN Via Sommar 14 Trento Italy

The development of novel Monolithic Active Pixel sensor (MAPS) technologies has been pursued by several collaborations in the last two decades. The ARCADIA project aims to design fully depleted MAPS for medical, space, HEP and X-ray detection applications, that can be produced with a commercial 110 nm CMOS production process. Among the test structures of the first two engineering runs of the project, passive pixel arrays with different pitches and layouts were included. The main characteristics of the produced devices in terms of dark current, depletion voltage, punch through current and pixel capacitance have been evaluated from IV and CV characteristics of the pixel arrays. Groups of four samples have been extracted from as many different positions within each wafer and electrically characterized to obtain information on the variability in the pixel operating voltage range and in the pixel dark current, reflecting variations related to the employed production process. The experimental data demonstrated a good uniformity in the considered parameters for different sample positions within the produced wafers, as well as for samples extracted from different wafers with the same substrate type.

关键词： Detector design and construction technologies and materials solid state detec-tors Detector modelling and simulations II (electric fields charge transport multiplication and induction pulse formation electron emission etc )

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A low-cost 64/spl times/64 uncooled infrared detector array in standard CMOS

A low-cost 64/spl times/64 uncooled infrared detector array ...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： S. Eminoglu M.Y. Tanrikulu T. Akin Department of Electrical and Electronics Engineering Middle East Technical University Ankara Turkey

This paper reports the development of a low-cost, 64/spl times/64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p/sup +/-active/n-well diodes in a standard 0.35 /spl mu/m CMOS process. The array is implemented using a simple post-CMOS process that do not require any critical lithography or complicated deposition steps. The pixel is 40 /spl mu/m/spl times/40 /spl mu/m in size with a fill factor of 44%, and it has a measured DC responsivity of 4970 V/W with a thermal time constant of 36 msec at 80 mTorr vacuum. The detector noise is measured as 0.52 /spl mu/V for a 4 kHz electrical bandwidth with a 1/f corner frequency of 4.4 Hz, resulting in a measured detectivity of 9.7/spl times/10/sup 8/cm Hz/sup 1/2/W and an estimated NETD value of 470 mK for an f=1 optics. The FPA is scanned at 30 fps using a 16-channel parallel readout circuit with low noise preamplifiers. The preamplifiers have a measured noise of 0.48 /spl mu/V, resulting in an overall estimated NETD of 800 mK, which can be decreased by increasing the number of parallel readout channels. The uncompensated pixel voltage non-uniformity is measured as 0.82%, which easily decreases down to 0.05% by compensating the fixed pattern noise. Considering its simple fabrication method and its moderate performance, this approach is suitable for low-cost commercial infrared imaging applications.

关键词： Infrared detectors sensor arrays Noise measurement Optical noise Frequency measurement Electric variables measurement Frequency estimation Circuit noise Preamplifiers Diodes

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development of a Mixed-Mode Pixel Array Detector for macromolecular crystallography

Development of a Mixed-Mode Pixel Array Detector for macromo...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： S.G. Angello F. Augustine A. Ercan S.M. Gruner R.C. Hamlin T. Hontz Ng.H. Xuong M.J. Renzi D.R. Schuette M.W. Tate W. Vernon Area Detector Systems Corporation Poway CA USA Augustine Engineering Encinitas CA USA Department of Applied and Engineering Physics Cornell University Ithaca NY USA CHESS The Physics Department Cornell University Ithaca NY USA Department of Chemistry and Biochemistry University of California San Diego San Diego CA USA MIT Lincoln Laboratories Lexington MA USA Physics Department Cornell University Ithaca NY USA Laboratory of Atomic and Solid State Physics Cornell University Ithaca NY USA

A Mixed-Mode Pixel Array Detector (MMPAD) has been conceived for protein crystallography applications. The most notable feature of the detector is the combination of analog and digital approaches used in the pixel to generate very large dynamic range, low dead time, and fast readout of the types of spot intensity measurements needed in X-ray images from large macromolecules. Prototype structures for the pixel have been fabricated and evaluated and indicate that an intensity range of 10/sup 7/ to 1 can be measured with a precision of 0.25%, while still maintaining a high DQE for X-rays in the 6-18 keV range. The mixed-mode structure is compatible with a fast I/O system and allows the possibility of full-frame readout in the ms range. We present details of pixel behavior, design of support electronics, hybridization results and plans for fabrication of large arrays.

关键词： sensor arrays Crystallography X-ray imaging Proteins Computer vision X-ray detection X-ray detectors Pixel Dynamic range Time measurement

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High-precision and low-latency widefield diamond quantum sensing with neuromorphic vision sensors

arXiv

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arXiv 2023年

作者： Du, Zhiyuan Gupta, Madhav Xu, Feng Zhang, Kai Zhang, Jiahua Zhou, Yan Liu, Yiyao Wang, Zhenyu Wrachtrup, Jörg Wong, Ngai Li, Can Chu, Zhiqin Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong School of Science and Engineering The Chinese University of Hong Kong Shenzhen China Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials School of Physics and Telecommunication Engineering South China Normal University Guangzhou510006 China Frontier Research Institute for Physics South China Normal University Guangzhou510006 China 3rd Institute of Physics Research Center SCoPE and IQST University of Stuttgart Stuttgart70569 Germany Max Planck Institute for Solid State Research Stuttgart Germany School of Biomedical Sciences The University of Hong Kong Hong Kong Advanced Biomedical Instrumentation Centre Hong Kong Science Park Shatin New Territories Hong Kong

During the past decade, interest has grown significantly in developing ultrasensitive widefield diamond magnetometry for various applications, such as inspecting integrated circuits, measuring neuronal action potentials, and investigating vortex dynamics in superconductors. Despite attempts to improve the adoption of conventional frame-based sensors, including the lock-in technique, avalanche photodiode arrays, and the streaking imaging approach, achieving high temporal resolution and sensitivity simultaneously remains a key challenge. This is largely due to the transfer and processing of massive amounts of sensor data to capture the widefield fluorescence intensity changes of spin defects in diamonds. In this study, we adopt a neuromorphic vision sensor to address this issue. This sensor pre-processes the detected signals in optically detected magnetic resonance (ODMR) measurements for quantum sensing, employing a working principle that closely resembles the operation of the human vision system. By encoding the changes of light intensity into spikes, this approach results in a vast dynamic range, high temporal resolution, and exceptional signal-to-background ratio. After a thorough evaluation of theoretical feasibility, our experiment with an off-the-shelf event camera demonstrated a 13× improvement in temporal resolution with comparable precision of detecting ODMR resonance frequencies compared with the state-of-the-art highly specialized frame-based approach. A specialized camera system with the same mechanism has the potential to enhance these benefits further. This performance improvement is primarily attributable to orders of magnitude smaller data volumes and, thus, reduced latency. We further showcase the deployment of this technology in monitoring dynamically modulated laser heating of gold nanoparticles coated on a diamond surface, a recognizably difficult task using existing approaches. The current development provides new insights for high-precision and

关键词： Electrophysiology

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单分子电子学的实验研究进展及未来10年展望:从器件到应用

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科学通报 2023年第17期68卷 2197-2212页

作者：洪文晶厦门大学化学化工学院人工智能研究院固体表面物理化学国家重点实验室高端电子化学品国家工程研究中心(重组)厦门361005

单分子电子学的初衷是采用单个分子这种极致尺寸结构精确可控的材料作为电子器件的功能单元,以此来应对半导体器件尺寸的小型化进程.从第一次实验测试到单分子电导开始,单分子电子学经历了25年的发展,逐渐衍生出两条研究路线:一条是延... 详细信息

单分子电子学的初衷是采用单个分子这种极致尺寸结构精确可控的材料作为电子器件的功能单元,以此来应对半导体器件尺寸的小型化进程.从第一次实验测试到单分子电导开始,单分子电子学经历了25年的发展,逐渐衍生出两条研究路线:一条是延续该领域的初心,通过采用单个分子构筑半导体器件,进而实现逻辑运算乃至分子计算芯片;另一条是开辟新的研究领域,采用单分子电子学技术作为单分子尺度物理化学过程的表征方法和研究工具.本文沿着单分子电子学的发展脉络,简述单分子电子学领域的重要研究进展,并对该领域未来发展趋势及所面临的挑战进行展望.

关键词：单分子分子电子学分子器件量子干涉电场效应

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