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Conference on Laser Radar Technology and applications VIII

作者： Marino, RM Stephens, T Hatch, RE McLaughlin, JL Mooney, JG O'Brien, ME Rowe, GS Adams, JS Skelly, L Knowlton, RC Forman, SE Davis, WR MIT Lincoln Lab Lexington MA 02420 USA

ISBN: (纸本)0819449458

MIT Lincoln Laboratory continues the development of novel high-resolution 3D imaging laser radar technology and sensor systems. The sensor system described in detail here uses a passively Q-switched solid-state frequency-doubled Nd:YAG laser to transmit short laser pulses (similar to 700 ps FWHM) at 532 rim wavelength and derive the range to target surface element by measuring the time-of-flight for each pixel. The single photoelectron detection efficiency has been measured to be > 20 % using these Silicon Geiger-mode APDs at room temperature. The pulse out of the detector is used to stop a > 500 MHz digital clock integrated within the focal-plane array. With appropriate optics, the 3202 array of digital time values represents a 3D spatial image frame of the scene. Successive image frames from the multi-kilohertz pulse repetition rate laser pulses are accumulated into range histograms to provide 3D volume and intensity information. In this paper, we report on a prototype sensor system, which has recently been developed using new 32x32 arrays of Geiger-mode APDs with 0.35 mum CMOS digital timing circuits at each pixel. Here we describe the sensor system development and present recent measurements of laboratory test data and field imagery.

关键词： laser radar ladar 3D imaging photon counting avalanche photodiode array

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Thin-film microsensors for high-temperature gas detection arrays

Thin-film microsensors for high-temperature gas detection ar...

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作者： Ward, Benjamin James Case Western Reserve University

学位级别：Ph.D.

Improvements in the control of engine and power generator exhausts, fire detection, and environmental monitoring can be achieved through the development of improved sensing methods. This study focused on the development of high temperature gas sensor arrays for use in these applications. sensors based on metal oxide resistors, specifically variations of tin oxide resistors and electrochemical cells were produced using microfabrication and micromachining techniques. The use of these techniques resulted in small, rugged sensors which can be produced in a repeatable manner. These sensors were designed to be usable in high temperature engine exhaust streams, but can be used in a wide range of environments due to the integration of a heater and temperature detector on chip for temperature control. Tin oxide thin films were deposited using a sol-gel technique. Three types of tin oxide sensing films were studied, including undoped tin oxide, platinum doped tin oxide, and a copper surface treated (by dip coating) tin oxide. These devices showed very different sensitivities to test gases in laboratory calibrations and were tested in several exhaust and fire-simulation systems. Two types of electrochemical cell devices were studied, including yttria stabilized zirconia (YSZ) for oxygen detection and a NASICON (sodium super ionic conductor)/sodium carbonate system for carbon dioxide detection. These sensors were operated in amperometric, diffusion limited mode. Both were produced on a generic “platform” for solid state, amperometric electrochemical microsensors. Laboratory testing showed sensitivity of these sensors to the gases of interest. Three separate designs of the YSZ sensor were investigated. Output currents on the order of 30 nA in nitrogen and 80 nA in air were noted. The diffusion barrier was not optimum for the desired linear change in output current compared to oxygen concentration. The NASICON based sensor included the novel processing step of electron beam evapo

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A low-cost 64x64 uncooled infrared detector array in standard CMOS 12

A low-cost 64x64 uncooled infrared detector array in standar...

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12th International Conference on solid-state sensors, Actuators and Microsystems (TRANSDUCERS 03)

作者： Eminoglu, S Tanrikulu, MY Akin, T Middle E Tech Univ Dept Elect & Elect Engn TR-06531 Ankara Turkey

ISBN: (纸本)0780377311

This paper reports the development of a low-cost, 64 x 64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p(+)-active/n-well diodes in a standard 0.35 mum CMOS process. The array is implemented using a simple post-CMOS process that do not require any critical lithography or complicated deposition steps. The pixel is 40 mum x 40 mum in size with a fill factor of 44%, and it has a measured DC responsivity of 4970 V/W with a thermal time constant of 36 msec at 80 mToff vacuum. The detector noise is measured as 0.52 muV for a 4 kHz electrical bandwidth with a 1/f corner frequency of 4.4 Hz, resulting in a measured detectivity of 9.7 x 10(8) cmHz(1/2)/W and an estimated NETD value of 470 mK for an f = 1 optics. The FPA is scanned at 30 fps using a 16-channel parallel readout circuit with low noise preamplifiers. The preampliers have a measured noise of 0.48 muV, resulting in an overall estimated NETD of 800 mK, which can be decreased by increasing the number of parallel readout channels. The uncompensated pixel voltage non-uniformity is measured as 0.82%, which easily decreases down to 0.05% by compensating the fixed pattern noise. Considering its simple fabrication method and its moderate performance, this approach is suitable for low-cost commercial infrared imaging applications.

关键词： Circuit noise Diodes Electric variables measurement Frequency estimation Frequency measurement Infrared detectors Noise measurement Optical noise Preamplifiers sensor arrays

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A low-cost 64/spl times/64 uncooled infrared detector array in standard CMOS

A low-cost 64/spl times/64 uncooled infrared detector array ...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： S. Eminoglu M.Y. Tanrikulu T. Akin Department of Electrical and Electronics Engineering Middle East Technical University Ankara Turkey

This paper reports the development of a low-cost, 64/spl times/64 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated p/sup +/-active/n-well diodes in a standard 0.35 /spl mu/m CMOS process. The array is implemented using a simple post-CMOS process that do not require any critical lithography or complicated deposition steps. The pixel is 40 /spl mu/m/spl times/40 /spl mu/m in size with a fill factor of 44%, and it has a measured DC responsivity of 4970 V/W with a thermal time constant of 36 msec at 80 mTorr vacuum. The detector noise is measured as 0.52 /spl mu/V for a 4 kHz electrical bandwidth with a 1/f corner frequency of 4.4 Hz, resulting in a measured detectivity of 9.7/spl times/10/sup 8/cm Hz/sup 1/2/W and an estimated NETD value of 470 mK for an f=1 optics. The FPA is scanned at 30 fps using a 16-channel parallel readout circuit with low noise preamplifiers. The preamplifiers have a measured noise of 0.48 /spl mu/V, resulting in an overall estimated NETD of 800 mK, which can be decreased by increasing the number of parallel readout channels. The uncompensated pixel voltage non-uniformity is measured as 0.82%, which easily decreases down to 0.05% by compensating the fixed pattern noise. Considering its simple fabrication method and its moderate performance, this approach is suitable for low-cost commercial infrared imaging applications.

关键词： Infrared detectors sensor arrays Noise measurement Optical noise Frequency measurement Electric variables measurement Frequency estimation Circuit noise Preamplifiers Diodes

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Recent advances in biologically sensitive field-effect transistors (BioFETs)

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ANALYST 2002年第9期127卷 1137-1151页

作者： Schöning, MJ Poghossian, A Univ Appl Sci Aachen D-52428 Julich Germany Forschungszentrum Julich Inst Thin Films & Interfaces D-52425 Julich Germany

Thirty years have elapsed since the invention of the ISFET by Bergveld. Since that time, various types of BioFETs have been developed using different biological recognition elements starting with enzymes and immunological species through DNA molecules to living cells and even living organisms. The study of the current state of BioFETs reveals that some BioFETs, like EnFETs are at a well-developed stage, whereas other BioFETs such as GenFETs and beetle/chip FETs are in the initial stages of development. There are still a number of fundamental and technological problems that must be overcome, before the first reliable BioFET-based bioanalytical microsystem will appear on the market. Therefore, intensive interdisciplinary research and cooperation of specialists from different disciplines is still required, not only in the field of biotechnology and bioengineer- ing but also in related disciplines, like informatics, solid-state physics, microtechnology, genetics as well as specific tech- niques such as sensor integration and packaging, interfacing circuits, etc. Hence, future prospects for BioFET developments can be expected in the following directions: (i) BioFETs utilising intact biological receptors (ion channel receptors, binding proteins, etc.) that bind specific drugs and reagents in such a way that they produce a conformational change in the protein structure. This conformational change, in turns, triggers a cellular response, (e.g., the opening of an ion channel of the membrane (so-called ion-channel switch biosensor); (ii) ISFET-based DNA chips can be considered as a new tool for the simultaneous analysis of thousands of nucleic acids with a broad area of potential applications in biomedical research and clinical diagnostics, genomics, drug screening, environmental monitor- ing and food industry. They combine both the possibility of direct DNA hybridisation detection without the use of labelled probes and the large integration ability of these active microelect

关键词： Glucose Oxidase chemical analysis micro total analysis systems Field effect transistors Biosensors signal acquisition biological organs hybrid systems Electronic Nose Oxygen electrodes sensor arrays Si technology

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New piezoceramic PZT-PNN material for medical diagnostics applications

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JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 2001年第10-11期21卷 1469-1472页

作者： Bove, T Wolny, W Ringgaard, E Pedersen, A Ferroperm Piezoceram AS DK-3490 Kvistgaard Denmark

The development of a new piezoceramic material, Ferroperm. Pz21, optimised for use in medical diagnostics applications is described. The requirements to such a material are very high permittivity, sensitivity and coupling factors, and at the same time a relatively high Curie temperature. The structure must furthermore be very dense and fine-grained, since dicing of small sub-elements for medical arrays must be performed without damaging the material. The developed material is a solid solution between a PZT phase and the relaxor phase Pb(Ni1/3Nb2/3)O-3. A comparison between different production processes is given, and a new solid state route for production of very dense and fine-grained materials is presented. Very positive characteristics are generally observed, and a stable behaviour even at elevated temperatures indicate that the material can find applications not only in the medical market, but also as a more general sensor/actuator. (C) 2001 Elsevier Science Ltd. All rights reserved.

关键词： functional applications perovskites piezoelectric properties powders : solid state reaction PZT

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Trends in the development of solid state amperometric and potentiometric high temperature sensors

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solid state IONICS 2000年第137期136卷 519-531页

作者： Göpel, W Reinhardt, G Rösch, M Univ Tubingen Inst Phys & Theoret Chem D-72076 Tubingen Germany Univ Tubingen Steinbeis Transfer Ctr Interface Anal & Sensors D-72076 Tubingen Germany

High temperature sensors based on solid electrolytes are well established in many applications. In this context. stabilized zirconia as an oxygen ion conductor plays the key role to monitor oxygen. Recent trends in the use of stabilized zirconia aim at the detection of other exhaust or environmental gases like NOx, CO or hydrocarbons. This is possible by, e.g. monitoring currents of specific electrode reactions at a given voltage ('amperometric devices') or monitoring voltages between different electrodes which result from specific electrode reactions including the kinetically determined formation of surface oxygen during different catalytic reactions ['mixed-potential (non-Nernstian) devices']. In all applications, the catalytic and electrochemical properties of the electrode materials play a key role for achieving reproducible sensor signals. This requires controlled microstructures down to the atomic scale. Therefore, extensive work now focuses on the structural as well as functional optimization of known, and on the development of new electrode materials. In this promising trend particular emphasis is put on the in-situ spectroscopic and microscopic characterization of the various interfaces under sensor operation conditions. (C) 2000 Elsevier Science B.V. All rights reserved.

关键词： stabilized zirconia amperometric sensors potentiometric sensors mixed potentials sensor arrays multi-component analysis interface analysis in-situ spectroscopy

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Low-cost post-CMOS integration of electroplated microstructures for inertial sensing

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sensorS AND ACTUATORS A-PHYSICAL 2000年第1-3期83卷 93-100页

作者： Wycisk, M Tönnesen, T Binder, J Michaelis, S Timme, HJ Univ Bremen IMSAS D-28334 Bremen Germany Infineon Technol D-81609 Munich Germany

This paper presents an additive integration technology for fabrication of MEMS with an electroplating technology on top of a CMOS signal processing circuit. Tt reports on the development of an inertial sensor-array device for automotive applications and shock-monitoring systems. This device can be manufactured using a low-cost CMOS production line and adding the mechanical sensor elements via a specialized back-end process. The basic fabrication process for the additive electroplating technology and a first device for inertial sensing was reported by the group at MME'97 [T. Tonnesen, O. Ludtke, J. Noetzel, J. Binder, G. Mader, Simulation, design and fabrication of electroplated acceleration switches, J. Micromech. Microeng. 7 (1997) 237-239.]. The additive electroplating technology represents a new alternative to other devices realized with bulk and surface micromachining as described, e.g., in Analog Devices [Analog Devices, Monolithic accelerometer with signal conditioning ADXL50, Application Notes, 1995.]. This paper concentrates on improvements in the fabrication technology and the development of the wafer-level capping and back-end packaging sequence for a sensor-array device, which can be manufactured within an industrial processing line. (C) 2000 Elsevier Science S.A. All rights reserved.

关键词： microswitch additive electroplating technology acceleration sensor threshold switch integration technology

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Direct conversion CdZnTe and CdTe detectors for digital mammography

Direct conversion CdZnTe and CdTe detectors for digital mamm...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： S. Yin T.O. Tumer D. Maeding J. Mainprize G. Mawdsley M.J. Yaffe F. Gordon W.J. Hamilton NOVA Research and Development Inc. CA USA Innovative Design Dana Point CA USA Sunnybrook & Women's College Health Sciences Centre University of Toronto Toronto ONT Canada Raytheon Systems Company CA USA

Hybrid CdZnTe and CdTe pixel detector arrays that convert X-rays directly into charge signals are under development at Nova for applications to digital mammography. CdZnTe and CdTe have superior X-ray conversion efficiency compared to either emulsion based film, phosphor-based detectors or other low-Z, solid-state detectors such as silicon. In this paper, latest results from thin (0.15 to 0.2 mm) CdZnTe and CdTe detectors will be presented in terms of MTF, DQE and phantom images. Single crystal CdZnTe detectors yield better results in DQE as well as phantom images, compared to the poly-crystal CdZnTe detectors. This is due to the non-uniformities in the poly-crystal that degrade the charge transport properties. Because of the charge-coupling limitation of the readout ASIC that was originally designed for Si detectors, the detector is biased to collect holes from the front side. This charge collection mode limits the CdZnTe detector performance. Their DQE measurements yield 25% and 65% for the poly-crystal and single-crystal CdZnTe detectors respectively. Poly-crystal CdTe test detectors were also hybridized to the same type charge readout chip. Since CdTe has much longer hole-propagation lengths compared to CdZnTe, it shows better performance in the hole-collecting mode. However, severe polarization effect degrades performance of the present device. Excellent images were also obtained from the CdTe detectors. Future work to redesign the readout ASIC and thus improve the detector performance is discussed. applications to industrial imaging such as Non-Destructive Evaluation (NDE) and Non-Destructive Inspection (NDI) are also discussed.

关键词： Mammography X-ray detection X-ray detectors Imaging phantoms Degradation Application specific integrated circuits sensor arrays Image converters Semiconductor films solid state circuits

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Proceedings of SPIE: solid state sensor arrays: development and applications II

Proceedings of SPIE: Solid State Sensor Arrays: Development ...

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solid state sensor arrays: development and applications II

This Volume 3301 of the conference proceedings contains 21 papers. Topics discussed include new devices and technologies, X ray sensors and CMOS sensors.

关键词： sensors

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