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2nd Conference on solid state Lighting

作者： Gaska, R Zukauskas, A Shur, MS Khan, MA Sensor Elect Technol Inc Latham NY 12110 USA

ISBN: (纸本)0819445436

We review two complementary approaches to the development of white light solid-state sources. The first approach, which involves polychromatic LED modules, is targeted at advanced optimization of spectral power distribution in order to establish an optimal trade-off between luminous efficacy and color rendering. We apply a stochastic method of optimization of a white-light source that relies on additive color mixing of the emissions from colored primary LEDs. We present the results on optimized spectra for all-semiconductor lamps composed of four primary LEDs with the line widths typical of present AlGaInP and AlInGaN technologies. We point out the problem of the lack of efficient yellow-green (570 nm) emitters required for polychromatic lamps with four and more primary LEDs. The second approach is based on the development of AlInGaN-based UV emitters that can be tailored to directly excite different phosphors without sensitizers. AlInGaN materials system demonstrated potential for making UV LEDs with a high power and short wavelengths required for such applications. This has been achieved by using Strain Energy Band Engineering (SEBE) and Pulsed Atomic Epitaxy (PALE) techniques. SEBE relies on quaternary AlGaInN compounds for controlling strain and band offset and for producing UV emitters with improved device performance. PALE allows us to incorporate the required significant amount of indium (few percent) in AlGaN, since it can be performed at lower growth temperatures required for In incorporation. Further improvements in materials quality of AlInGaN layers with a high molar fraction of Al will be achieved by using bulk AIN substrates.

关键词： solid-state lighting white solid-state lamp color mixing optimization UV light emitting diodes phosphor conversion

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A Highly Fluorescent Metallosalalen-Based Chiral Cage for Enantioselective Recognition and Sensing

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CHEMISTRY-A EUROPEAN JOURNAL 2014年第21期20卷 6455-6461页

作者： Dong, Jinqiao Zhou, Yanfang Zhang, Fangwei Cui, Yong Shanghai Jiao Tong Univ Sch Chem & Chem Technol Shanghai 200240 Peoples R China Shanghai Jiao Tong Univ State Key Lab Met Matrix Composites Shanghai 200240 Peoples R China

A highly fluorescent coordination cage [Zn8L4I8] has been constructed by treating enantiopure pyridyl-functionalized metallosalalen units (L) with zinc(ii) iodide and characterized by a variety of techniques including microanalysis, thermogravimetric analysis (TGA), circular dichroism (CD) spectroscopy, and single-crystal and powder X-ray diffraction. Strong intermolecular -, CH, and CHI interactions direct packing of the cage molecules to generate a 3D polycage network interconnected by pentahedral cages formed by adjacent pentamers. The cage has an amphiphilic helical cavity decorated with chiral NH functionalities capable of interactions with guest species such as saccharides. The fluorescence of the cage was greatly enhanced by five enantiomeric saccharides in solution, with enantioselectivity factors of 2.480-4.943, and by five enantiomeric amines in the solid state, with enantioselective fluorescence enhancement ratios of 1.30-3.60. This remarkable chiral sensing of both saccharides and amines with impressive enantioselectivity may result from the steric confinement of the cavity as well as its conformational rigidity. It holds great promise for the development of novel chiral cage materials for sensing applications.

关键词： chirality coordination cage fluorescence sensor metal-organic frameworks metallosalalen saccharides

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CMOS-Integrated Stress sensor Systems for Mechanical Sensing and Packaging Reliability Testing

CMOS-Integrated Stress Sensor Systems for Mechanical Sensing...

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Symposium on Microelectromechanical Systems - Materials and Devices ii held at the 2008 MRS Fall Meeting

作者： Paul, Oliver Gieschke, Pascal Lemke, Benjamin Univ Freiburg Dept Microsyst Engn IMTEK D-79110 Freiburg Germany

ISBN: (纸本)9781605111117

This paper presents a selection of microsensors and microsystems based on complementary metal oxide semiconductor technology for measuring mechanical stress and tries to identify some of the next challenges. As the stress acting on the sensors may originate from effects internal or external to the package, the sensors lend themselves for the measurement of (1) time-dependent thermomechanical forces acting on a packaged microchip and (2) external mechanical constraints, i.e., forces and moments. Recently developed applications include tactile sensors, smart brackets, and a solid-state-only joystick with four degrees of freedom, among others. The systems implemented in these applications rely on sensors for in-plane stresses. For packaging testing applications, in addition, sensors for out-of-plane stress components are beneficial. First designs of such new sensors and corresponding results are presented. The calibration of piezoresistive elements is performed on dedicated experimental setups, such as optimized four-point bending and torsional bridges for the application of well-controlled in-plane stresses, and setups in the first stage of their development for the exertion of vertical stress components.

关键词： Degrees of freedom (mechanics)

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Phosphorus-doped synergy of phase change in heterogeneous catalysts of NiS-NiS2 for efficient electrocatalysis of Pb(ii)

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ANALYTICA CHIMICA ACTA 2024年 1288卷

作者： Li, Yong-Yu Li, Kai-Yuan Chen, Shi-Hua Ma, Na Song, Zong-Yin Yang, Meng Wang, Jie Liu, Wen-Qing Tianjin Univ Sch Environm Sci & Engn Tianjin 300350 Peoples R China Anhui Univ Inst Phys Sci & Informat Technol Hefei 230601 Peoples R China Hefei Comprehens Natl Sci Ctr Inst Environm Hefei 230088 Peoples R China Chinese Acad Sci Inst Solid State Phys HFIPS Hefei 230031 Peoples R China Anhui Polytech Univ Coll Mech & Automot Engn Wuhu 241000 Peoples R China

A fundamental understanding of the electroanalytical activity of transition metal sulfide electrocatalysts, especially the origin of the electrocatalytic reactivity on the surface sites of heterostructures with multiple crystalline phases, is essential for the design of low-cost and highly efficient nonprecious metal electrocatalysts for further scientific and technological achievements. Herein, we injected P into NiS and occupied the S sites through a doping strategy. The redistributed electronic structure induced the construction of heterostructures, which significantly improved the structure and chemical state of electrochemically inert NiS. The phase-change mechanism between NiS and NiS2 synergistically catalyzes Pb(ii), while the P and S sites jointly lose electrons. Moreover, the constructed heterojunction sensor shows the a sensitivity of 83.43 mu A mu M-1 to Pb(ii) with a theoretical limit of detection of 48 nM, as well as excellent stability, reproducibility, and anti-interference ability. The accurate detection in real water further reveals the potential of this sensor for practical applications. This study provides a guiding strategy for improving electrochemically inert materials to design highly active electrocatalytic interfaces, which has important implications for the development of highly efficient electrode -sensitive materials similar to precious metals to achieve accurate electrical analysis.

关键词： Phosphorus-doped heterogeneous catalysts Phase change Electrocatalysis

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A Tunable Concurrent Dual-Band Phase Shifter MMIC for Beam Steering applications

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS ii-EXPRESS BRIEFS 2020年第11期67卷 2412-2416页

作者： Xiong, Yitong Zeng, Xiaoping Li, Junging Chongqing Univ Coll Microelect & Commun Engn Chongqing Engn Lab High Performance Integrated Ci Chongqing 400044 Peoples R China Sichuan Inst Solid State Circuits Chongqing 400044 Peoples R China

This brief presents a dual-band tunable concurrent passive phase shifter monolithic microwave integrated circuit utilizing a two-stage dual-branch phase tuning network topology. The designed phase shifter with two independent phase tuning bands operates at 5.9 GHz and 16 GHz. The dual-band phase shifter is fabricated in a 0.25 mu m GaAs process and occupies a small chip area of 0.98 mm(2) (including pads). Measurement results show that transmission phases in the two frequency bands can be tuned concurrently. Phase tuning range is greater than 105. in either band. Insertion losses of less than 2.8 dB and 3.5 dB are exhibited in 5.8 similar to 6 GHz and 15.8 similar to 16.2 GHz, respectively. And amplitude imbalances within the whole phase tuning range in 5.8 similar to 6 GHz and 15.8 similar to 16.2 GHz are less than 1.1 dB and 1.3 dB, respectively. The return losses are greater than 10 dB in both frequency bands. The phase shifter is employed in a fourelement dual-band phased array network. The phased array is able to independently tilt its main beam toward -20 degrees similar to +*** in either band.

关键词： Phase shifters monolithic microwave integrated circuits (MMICs) phased arrays beam steering

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Mercury cadmium telluride infrared detector development in India: Status and issues

Mercury cadmium telluride infrared detector development in I...

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Infrared Technology and applications XXXV

作者： Singh, R.N. IRDE Department of Physics Lucknow University Dehra-Dun Lucknow India

ISBN: (纸本)9780819475640

In the present paper, we describe the development of Long Wave Infrared (8-12 μm) linear and 2-D IR FPA detectors using HgCdTe for use in thermal imagers and iiR seekers. In this direction, solid state Physics Laboratory(SSPL) (DRDO) tried to concentrate initially in the bulk growth and characterization of HgCdTe during the early eighties. Some efforts were then made to develop a LWIR photoconductive type MCT array in linear configuration with the IRFPA processed on bulk MCT crystals grown in the laboratory. Non availability of quality epilayers with the required specification followed by the denial of supply of CdTe, CdZnTe and even high purity Te by advanced countries, forced us to shift our efforts during early nineties towards development of 60 element PC IR detectors. High performance linear PC arrays were developed. A novel horizontal casting procedure was evolved for growing high quality bulk material using solid state recrystallization technique. Efforts for ultra purification of Te to 7N purity with the help of a sister concern has made it possible to have this material indigenously. Having succeded in the technology for growing single crystalline CdZnTe with (111) orientation and LPE growth of HgCdTe epilayers on CdZnTe substrates an attempt was made to establish the fabrication of 2D short PV arrays showing significant IR response. Thus a detailed technological knowhow for passivation, metallization, ion implanted junction formation, etc. was generated. Parallel work on the development of a matching CCD Mux readout in silicon by Semiconductor Complex Limited was also completed which was tested first in stand-alone mode followed by integration with IRFPAs through indigenously-developed indium bumps. These devices were integrated into an indigenously fabricated glass dewar cooled by a self-developed JT minicooler. In recent years, the LPE (Liquid Phase Epitaxy) growth from Te-rich route has been standardized for producing epitaxial layers with high composit

关键词： ii-VI semiconductors

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2010 IEEE Asian solid-state Circuits Conference, A-SSCC 2010

2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

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2010 6th IEEE Asian solid-state Circuits Conference, A-SSCC 2010

ISBN: (纸本)9781424482979

The proceedings contain 97 papers. The topics discussed include: future television - super hi-vision and beyond;asymmetric cross-coupled sense amplifier for small-sized 0.5-V gigabit-DRAM arrays;a 28 nm dual-port SRAM macro with screening circuitry against write-read disturb failure;a multi-mode digital controller with windowed ADC and self-calibrated DPWM for slew-enhanced switching converter;a 1-V input, 0.2-V to 0.47-V output switched-capacitor DC-DC converter with pulse density and width modulation (PDWM) for 57% ripple reduction;an ultra-low-cost RFID tag with 1.67 Gbps data rate by ink-jet printing on paper substrate;low noise capacitive sensor for multi-touch mobile handset's applications;a 31mA CMOS wideband BD-ii B2&B3 mode receiver with 55dB gain dynamic range;a high-speed, on-chip implementation of Teager Kaiser operator for in-band interference rejection;a 40-GHz phase-locked loop for 60-GHz sliding-IF transceivers in 65nm CMOS;and a 0.45V-to-2.7V inductive-coupling level shifter.

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Strain control of real- and lattice-spin currents in a silicene junction

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PHYSICS LETTERS A 2017年第33期381卷 2754-2760页

作者： Phonapha, Sarayut Suwanvarangkoon, Assanai Soodchomshom, Bumned Kasetsart Univ Fac Sci Dept Phys Bangkok 10900 Thailand

We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the junction yields strain filtering effect with perfect strain control of real- (or lattice-)spin currents. (i) By applying electric field without circularly polarized light we show that total current is carried by pure lattice-spin up (or down) electrons tunable by strain. (ii) When circularly polarized light is irradiated onto silicene sheet without applying electric field, total current is carried by pure real-spin up (or down) electrons tunable by strain. High conductance peaks associated with pure real- (or lattice-)spin currents in case ii (or i) occur at specific magnitude of strain, yielding strain filtering effect. Magnitudes of filtered strain due to pure real- (or lattice-) spin currents may be tunable by varying chemical potential. Sensitivity may be enhanced by increasing thickness of strained barrier. Significantly, (iii) when both perpendicular electric field and circularly polarized light are applied, the total current is carried by three species of electron groups tunable by strain. This may lead to controllable numbers of electron species to transport. This result shows that strain filtering effect in a silicene-based junction is quite different from that in graphene junction. Our work reveals potential of silicene as a nano-electro-mechanical device and spin-valleytronic applications. (C) 2017 Elsevier B.V. All rights reserved.

关键词： Silicene Spintronics 2-Dimensional topological insulator Strain sensor

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Femtosecond pulse structuring of multicore fibers for development of advanced fiber lasers and sensors 5th

Femtosecond pulse structuring of multicore fibers for develo...

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5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020

作者： Dostovalov, Alexandr V. Wolf, Alexey A. Bronnikov, Kirill A. Skvortsov, Mikhail I. Churin, Alexey E. Babin, Sergey A. Institute of Automation and Electrometry of the SB RAS 1 Acad. Koptyug Ave Novosibirsk630090 Russia

ISBN: (纸本)9783035737936

In this paper we investigate the fiber Bragg grating (FBG) arrays selectively inscribed in a multicore fiber for a different sensor and laser applications. Particularly, wavelength-switchable and tunable fiber laser was realized based on uniform and non-uniform FBGs precisely positioned in the selected cores. A quasi-distributed 3D shape sensor based on FBG array inscribed in a multicore fiber with helically twisted side cores was fabricated and applied for shape reconstruction of papillotome. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Fiber lasers

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iiI-Nitride Nanowires: Emerging Materials for Lighting and Energy applications

III-Nitride Nanowires: Emerging Materials for Lighting and E...

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219th Meeting of the Electrochemical-Society (ECS)/Symposium on Wide Bandgap Semiconductor Materials and Devices 12

作者： Wang, George T. Li, Qiming Huang, Jianyu Wierer, Jonathan Armstrong, Andrew Lin, Yong Upadhya, Prashanth Prasankumar, Rohit Sandia Natl Labs POB 5800 Albuquerque NM 87185 USA Los Alamos Natl Lab Los Alamos NM 87545 USA

ISBN: (纸本)9781607682172;9781566778671

The aligned growth of iiI-nitride nanowires, along with results providing insights into the nanowire properties obtained using electrical, optical and structural characterization techniques, are discussed. A new "top-down" approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter is also presented, along with results from preliminary LEDs grown on these nanorod arrays. Additionally, a novel application of aligned nanowire arrays as strain-relief templates for the growth of high quality GaN is demonstrated.

关键词： Nanowires

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