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Infrared Technology and applications XXXV

作者： Singh, R.N. IRDE Department of Physics Lucknow University Dehra-Dun Lucknow India

ISBN: (纸本)9780819475640

In the present paper, we describe the development of Long Wave Infrared (8-12 μm) linear and 2-D IR FPA detectors using HgCdTe for use in thermal imagers and iiR seekers. In this direction, solid state Physics Laboratory(SSPL) (DRDO) tried to concentrate initially in the bulk growth and characterization of HgCdTe during the early eighties. Some efforts were then made to develop a LWIR photoconductive type MCT array in linear configuration with the IRFPA processed on bulk MCT crystals grown in the laboratory. Non availability of quality epilayers with the required specification followed by the denial of supply of CdTe, CdZnTe and even high purity Te by advanced countries, forced us to shift our efforts during early nineties towards development of 60 element PC IR detectors. High performance linear PC arrays were developed. A novel horizontal casting procedure was evolved for growing high quality bulk material using solid state recrystallization technique. Efforts for ultra purification of Te to 7N purity with the help of a sister concern has made it possible to have this material indigenously. Having succeded in the technology for growing single crystalline CdZnTe with (111) orientation and LPE growth of HgCdTe epilayers on CdZnTe substrates an attempt was made to establish the fabrication of 2D short PV arrays showing significant IR response. Thus a detailed technological knowhow for passivation, metallization, ion implanted junction formation, etc. was generated. Parallel work on the development of a matching CCD Mux readout in silicon by Semiconductor Complex Limited was also completed which was tested first in stand-alone mode followed by integration with IRFPAs through indigenously-developed indium bumps. These devices were integrated into an indigenously fabricated glass dewar cooled by a self-developed JT minicooler. In recent years, the LPE (Liquid Phase Epitaxy) growth from Te-rich route has been standardized for producing epitaxial layers with high composit

关键词： ii-VI semiconductors

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Characterization of the column-based priority logic readout of Topmetal-ii^- CMOS pixel direct charge sensor

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JOURNAL OF INSTRUMENTATION 2017年第3期12卷 C03004-C03004页

作者： An, M. Zhang, W. Xiao, L. Gao, C. Chen, C. Han, M. Huang, G. Ji, R. Li, X. Liu, J. Mei, Y. Pei, H. Sun, Q. Sun, X. Wang, K. Yang, P. Zhou, W. Cent China Normal Univ Key Lab Quark & Lepton Phys MOE PLAC Wuhan 430079 Hubei Peoples R China Lawrence Berkeley Natl Lab Nucl Sci Div Berkeley CA 94720 USA Chinese Acad Sci Inst High Energy Phys Beijing 100049 Peoples R China Southern Methodist Univ Dept Phys Dallas TX 75205 USA

We present the detailed study of the digital readout of Topmetal-ii- CMOS pixel direct charge sensor. Topmetal-ii- is an integrated sensor with an array of 72 x 72 pixels each capable of directly collecting external charge through exposed metal electrodes in the topmost metal layer. In addition to the time-shared multiplexing readout of the analog output from Charge Sensitive Amplifiers in each pixel, hits are also generated through comparators in each pixel with individually adjustable thresholds. The hits are read out via a column-based priority logic structure, retaining both hit location and time information. The in-array column-based priority logic features with a full clock-less circuitry hence there is no continuously running clock distributed in the pixel and matrix logic. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments. We studied the detailed working behavior and performance of this readout, and demonstrated its functional validity and potential in imaging applications.

关键词： Electronic detector readout concepts (solid-state) Front-end electronics for detector readout Pixelated detectors and associated VLSI electronics VLSI circuits

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Strain control of real- and lattice-spin currents in a silicene junction

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PHYSICS LETTERS A 2017年第33期381卷 2754-2760页

作者： Phonapha, Sarayut Suwanvarangkoon, Assanai Soodchomshom, Bumned Kasetsart Univ Fac Sci Dept Phys Bangkok 10900 Thailand

We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the junction yields strain filtering effect with perfect strain control of real- (or lattice-)spin currents. (i) By applying electric field without circularly polarized light we show that total current is carried by pure lattice-spin up (or down) electrons tunable by strain. (ii) When circularly polarized light is irradiated onto silicene sheet without applying electric field, total current is carried by pure real-spin up (or down) electrons tunable by strain. High conductance peaks associated with pure real- (or lattice-)spin currents in case ii (or i) occur at specific magnitude of strain, yielding strain filtering effect. Magnitudes of filtered strain due to pure real- (or lattice-) spin currents may be tunable by varying chemical potential. Sensitivity may be enhanced by increasing thickness of strained barrier. Significantly, (iii) when both perpendicular electric field and circularly polarized light are applied, the total current is carried by three species of electron groups tunable by strain. This may lead to controllable numbers of electron species to transport. This result shows that strain filtering effect in a silicene-based junction is quite different from that in graphene junction. Our work reveals potential of silicene as a nano-electro-mechanical device and spin-valleytronic applications. (C) 2017 Elsevier B.V. All rights reserved.

关键词： Silicene Spintronics 2-Dimensional topological insulator Strain sensor

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Photodetector development at Fraunhofer IAF - from LWIR to SWIR operating from cryogenic close to room temperature 43

Photodetector development at Fraunhofer IAF - from LWIR to S...

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Conference on Infrared Technology and applications XLiiI

作者： Daumer, V. Gramich, V. Mueller, R. Schmidt, J. Rutz, F. Stadelmann, T. Woerl, A. Rehm, R. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510608559;9781510608566

Photodetectors in the non-visible region of the electromagnetic spectrum are essential for security, defense and space science as well as industrial and scientific applications. The research activities at Fraunhofer IAF cover a broad range in the infrared (IR) regime. Whereas short-wavelength IR (SWIR, <1.7 mu m) detectors are realized by InGaAs/InP structures, InAs/GaSb type-ii superlattice (T2SL) infrared detectors are developed for the spectral bands from mid( MWIR, 3-5 mu m) to long-wavelength IR (LWIR, 8-12 mu m). We report on the extension of the superlattice empirical pseudopotential method (SEPM) to 300 K for the design of LWIR heterostructures for operation near room temperature. Recently, we have also adapted heterostructure concepts to our well established bi-spectral T2SL MWIR detector resulting in a dark current density below 2 x 10-9 A/cm(2) for a cut-off wavelength close to 5 mu m. Finally, we present first results obtained with a gated viewing system based on our InGaAs/InAlAs/InP avalanche photodiode arrays.

关键词： SWIR MWIR LWIR T2SL InAs/GaSb type-ii superlattice photodetector InGaAs InAlAs avalanche photodiode APD

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2^nd and 3^rd generation thermal imagers based on type-ii superlattice photodiodes

2<SUP>nd</SUP> and 3<SUP>rd</SUP> generation thermal imagers...

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Conference on Infrared and Photoelectronic Imagers and Detector Devices

作者： Rehm, Robert Walther, Martin Schmitz, Johannes Fleissner, Joachim Ziegler, Johann Cabanski, Wolfgang Breiter, Rainer Fraunhofer Inst Appl Solid State Phys Freiburg Germany AIM Infrarot Module GmbH Heilbronn Germany

ISBN: (纸本)0819463736

We report on the development of InAs/GaSb type-ii superlattice focal plane arrays (FPAs) for missile warning systems in airborne platforms. The FPA fabrication technology was developed on the basis of monospectral superlattices for the MWIR (3-5 mu m) spectral range. A monospectral. 288x384 MWIR camera with 24 mu m pixel pitch, a noise equivalent temperature difference (NETD) better than 14 mK and a background-limited performance (BLIP) up to 92 K is demonstrated. Based on the monospectral technology, the first bispectral superlattice camera was realized. The dual color 288x384 superlattice camera features simultaneous, pixel-registered detection of both spectral channels between 3-4 mu m and 4-5 mu m with a NETD better than 30 mK and 17 m-K, respectively. Hence, spatial or temporal registration problems, which are common to most dual color and dual band infrared imagers are solved with the new bispectral MWIR missile alerting sensor.

关键词： InAs/GaSb type-ii superlattice missile warning dual-band dual-color bispectral infrared camera thermal imaging focal plane array

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development of ASIC for SiPM sensor readout

Development of ASIC for SiPM sensor readout

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作者： CHENG, WEISHUAI Polytechnic University of Turin

学位级别：博士

Silicon photo-multiplier (SiPM) is a new generation of solid-state photon sensors, invented by Russian scientists during the 1990s, which working principle is based on the operation of photo-diode arrays in Geiger mode. Similarly to the conventional Photon-Multiplier Tube (PMT), a SiPM features a high gain in the same range, high Photon Detect Efficiency (PDE) and excellent time response. On top of that, SiPMs provide important advantages such as low operating voltage, com- pactness and insensitivity to magnetic fields. Initial drawbacks in terms of high cross-talk, dark count and generally high correlated noise, has been significantly reduced with constant improvements in manufacturing technology. As a conse- quence, SiPMs became an attractive choice for an increased number of applications in nuclear medicine, high energy and astroparticle physics experiments, automotive (LIDAR) and homeland security. ASICs (Application Specified Integrated Circuits) have been used in radiation sensor readout for more than 40 years, providing specific solutions in terms of signal amplification, shaping, and digitization. The development of custom integrated electronics for the readout of highly segmented SiPM matrices allowed for the con- struction of compact photoelectronic modules for detectors implementing aggressive spatial resolution and channel density. This thesis exploits the development of innovative CMOS integrated electronics for SiPM readout. The versatility of the architecture of the ASICs herein described should allow for the use of these electronics in system-grade detectors for medical imaging, particle and nuclear physics, using both room temperature inorganic (crystal) scintillators or the fast scintillation of compton scattering in novel noble-liquid based PET detectors operating at cryogenic temperatures. This manuscript provides detailed description, analytical depiction and silicon characterisation results of the front-end CMOS circuitry to readout SiPM sensor

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A general approach to one-step fabrication of single-piece nanocomposite membrane based Pb²⁺-selective electrodes

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sensorS AND ACTUATORS B-CHEMICAL 2019年 281卷 705-712页

作者： Liu, Yueling Liu, Yang Gao, Yingying Wang, Ping East China Univ Sci & Technol Sch Biotechnol Biomed Nanotechnol Ctr State Key Lab Bioreactor Engn Shanghai 200237 Peoples R China

A simple and general approach leading to well-dispersed and surfactant-free multi-walled carbon nanotubes (MWCNT) based single-piece Pb(2+-)selective nanocomposite membrane is proposed. The single-piece solid-contact Pb2+-selective electrodes were prepared via one-step drop casting the ultrasonicated suspension mixture on the golden electrodes. The obtained electrodes exhibited a Nernstian response slope of 29.0 +/- 0.2 mV/decade in the linear range from 2.0 x 10(-3) to 2.0 x 10(-9) M and a low detection limit of 4.0 x 10(-10) M. Due to the inherent high capacitance and hydrophobicity of nanocomposite membrane, excellent long-term potential stability and absence of water films were observed. Moreover, the sensor showed good resistance to interfering agents such as redox couple, light and gases. In addition, the proposed electrodes were demonstrated to be feasible for Pb2+ determination in tap water. Overall it was demonstrated as an appealing sensor for lead (ii) detection for environmental and clinical applications.

关键词： Single-piece Nanocomposite Multi-walled carbon nanotubes Lead Ion selective electrode

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Cobalt-Embedded N-Doped Carbon Nanostructures for Oxygen Reduction and Supercapacitor applications

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ACS APPLIED NANO MATERIALS 2020年第7期3卷 6354-6366页

作者： Devi, Bandhana Jain, Anuj Roy, Biswajit Rao, Bhaskara R. Tummuru, N. R. Halder, Aditi Koner, Rik Rani Indian Inst Technol Mandi Sch Basic Sci Kamand 175005 Himachal Prades India Indian Inst Technol Mandi Sch Engn Kamand 175005 Himachal Prades India Indian Inst Technol Mandi Sch Comp & Elect Engn Kamand 175005 Himachal Prades India

Metal-organic framework (MOF)-derived nanostructures are portraying a major confront to the quest for high-performing electrocatalysts for energy conversion and storage devices largely because of their tunable synthesis, high surface area, and presence of various heteroatoms depending upon the choice of ligands used as precursors. In this regard, multifunctional electrode material development with high performance is a contemporary trend. We report an innovative integrated nanostructure of Co-NC3 (Co-MOF annealed at 700 degrees C for 3 h under Ar) bestowed with admirable potential, derived from a newly designed Co(ii)-based MOF comprising benzene-1,3,5-tricarboxylic acid and 1,10-phenanthroline. The Co-NC3 nanostructure derived from Co-MOF was found to be a highly efficient catalyst for the oxygen reduction reaction with onset potential (0.90 V vs RHE) and half-wave potential (0.81 V vs RHE) comparable to those for the commercial 20 wt % Pt/C catalyst (0.91 and 0.83 V vs RHE). Next, the same catalyst was explored as a commendable energy-storage material for supercapacitors with a specific capacitance value of 310 F/g at a 0.5 A/g current density. We fabricated a solid-state asymmetric supercapacitor device from Co-NC3 and lit light-emitting diodes of 1.8 V each using three such supercapacitors in series. For the first time, a Co-MOF-derived supercapacitor was deployed successfully in a solar photovoltaic-based sensor node system.

关键词： metal-organic framework electrocatalyst oxygen reduction reaction durability supercapacitor PV based sensor

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Metal Oxide Nanomaterials for Chemical sensors 1

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丛书名： Integrated Analytical Systems

1000年

作者： Michael A. Carpenter Sanjay Mathur Andrei Kolmakov

ISBN: (数字)9781461453956

ISBN: (纸本)9781461453949;9781489998064

This book presents a state-of-the-art summary and critical analysis of work recently performed in leading research laboratories around the world on the implementation of metal oxide nanomaterial research methodologies for the discovery and optimization of new sensor materials and sensing systems. The book provides a detailed description and analysis of (i) metal oxide nanomaterial sensing principles, (ii) advances in metal oxide nanomaterial synthesis/deposition methods, including colloidal, emulsification, and vapor processing techniques, (iii) analysis of techniques utilized for the development of low temperature metal oxide nanomaterial sensors, thus enabling a broader impact into sensor applications, (iv) advances, challenges and insights gained from the in situ/ex situ analysis of reaction mechanisms, and (v) technical development and integration challenges in the fabrication of sensing arrays and devices.

关键词： Analytical Chemistry Nanotechnology Physical Chemistry Metallic Materials

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High-power 2-um diode-pumped Tm:YAG laser

High-power 2-um diode-pumped Tm:YAG laser

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solid state Lasers V

作者： Beach, Raymond J. Sutton, Steven B. Honea, E.C. Skidmore, Jay A. Emanuel, Mark A. Lawrence Livermore Natl. Lab. Livermore CA USA

ISBN: (纸本)0819420727

Using a scalable diode end-pumping technology developed at Lawrence Livermore National Laboratory we have demonstrated a compact Tm:YAG laser capable of generating greater than 50 W of cw 2 micrometer laser output power. The design and operational characteristics of this laser, which was built originally for use in assessing laser surgical techniques, are discussed. The 2 micrometer radiation produced by the 3F4 - 3H6 transition of Tm3+ has many practical applications because it is strongly absorbed by water and also because it is an 'eye-safe' wavelength. The strong absorption of 2 micrometer radiation by water makes this transition a very attractive candidate for performing laser surgical procedures as most tissue types are predominately composed of liquid water. The fact that 2 micrometer radiation is considered 'eye-safe' makes this transition attractive for laser range finding and remote sensing applications where other laser wavelengths could pose a safety hazard. At sufficiently high doping densities, Tm3+ exhibits a beneficial two-for-one quantum pump efficiency enabling well developed AlGaAs laser diode arrays to be used as efficient excitation sources. Many applications requiring 2 micrometer laser radiation such as remote sensing, laser radar, anti sensor, sensor spoofing, and OPO pumping have driven the development of diode pumped all solid state TM3+ laser systems because of their potential for efficiency, compactness, and ruggedness. Here we focus on Tm3+:YAG and the scalable diode end-pumping technology developed at LLNL which enables higher average power operation of diode pumped Tm3+ laser systems than has previously been possible. To date we have demonstrated cw operation of this laser to power levels of 51 W. The end-pumping technology used is the same as was previously used to demonstrate a 100 mJ Q-switched Nd:YLF laser.

关键词： solid state lasers

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