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作者： CHENG, WEISHUAI Polytechnic University of Turin

学位级别：博士

Silicon photo-multiplier (SiPM) is a new generation of solid-state photon sensors, invented by Russian scientists during the 1990s, which working principle is based on the operation of photo-diode arrays in Geiger mode. Similarly to the conventional Photon-Multiplier Tube (PMT), a SiPM features a high gain in the same range, high Photon Detect Efficiency (PDE) and excellent time response. On top of that, SiPMs provide important advantages such as low operating voltage, com- pactness and insensitivity to magnetic fields. Initial drawbacks in terms of high cross-talk, dark count and generally high correlated noise, has been significantly reduced with constant improvements in manufacturing technology. As a conse- quence, SiPMs became an attractive choice for an increased number of applications in nuclear medicine, high energy and astroparticle physics experiments, automotive (LIDAR) and homeland security. ASICs (Application Specified Integrated Circuits) have been used in radiation sensor readout for more than 40 years, providing specific solutions in terms of signal amplification, shaping, and digitization. The development of custom integrated electronics for the readout of highly segmented SiPM matrices allowed for the con- struction of compact photoelectronic modules for detectors implementing aggressive spatial resolution and channel density. This thesis exploits the development of innovative CMOS integrated electronics for SiPM readout. The versatility of the architecture of the ASICs herein described should allow for the use of these electronics in system-grade detectors for medical imaging, particle and nuclear physics, using both room temperature inorganic (crystal) scintillators or the fast scintillation of compton scattering in novel noble-liquid based PET detectors operating at cryogenic temperatures. This manuscript provides detailed description, analytical depiction and silicon characterisation results of the front-end CMOS circuitry to readout SiPM sensor

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Type ii superlattice infrared photodetector research at Fraunhofer IAF 44

Type II superlattice infrared photodetector research at Frau...

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Conference on Infrared Technology and applications XLIV

作者： Stadelmann, T. Daumer, V. Gramich, V. Hugger, T. Kirste, L. Klinger, V. Kohn, N. Luppold, W. Mueller, R. Niemasz, J. Rehm, R. Rutz, F. Schmidt, J. Walther, M. Wauro, M. Woerl, A. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510617605

Through the choice of appropriate layer thicknesses, the bandgap of InAs/Ga(As) Sb type ii superlattices (T2SLs) can be engineered in a wide range covering the mid-wavelength and long-wavelength infrared (MWIR, 3 mu m-5 mu m and LWIR, 8 mu m-12 mu m) spectral regions. Using this material system, Fraunhofer IAF develops bi-spectral MWIR image sensors based on homojunction photodiodes for missile warning applications and pursues modern heterojunction approaches as well as heteroepitaxial growth of T2SLs on GaAs. We discuss topics arising from efforts to improve the manufacturability of our bi-spectral arrays and report on the progress of the integration with MWIR heterojunction designs that exhibit reduced dark currents.

关键词： MWIR LWIR InAs/GaSb T2SL infrared photodetector image sensor

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Metal Oxide Nanomaterials for Chemical sensors 1

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丛书名： Integrated Analytical Systems

1000年

作者： Michael A. Carpenter Sanjay Mathur Andrei Kolmakov

ISBN: (数字)9781461453956

ISBN: (纸本)9781461453949;9781489998064

This book presents a state-of-the-art summary and critical analysis of work recently performed in leading research laboratories around the world on the implementation of metal oxide nanomaterial research methodologies for the discovery and optimization of new sensor materials and sensing systems. The book provides a detailed description and analysis of (i) metal oxide nanomaterial sensing principles, (ii) advances in metal oxide nanomaterial synthesis/deposition methods, including colloidal, emulsification, and vapor processing techniques, (iii) analysis of techniques utilized for the development of low temperature metal oxide nanomaterial sensors, thus enabling a broader impact into sensor applications, (iv) advances, challenges and insights gained from the in situ/ex situ analysis of reaction mechanisms, and (v) technical development and integration challenges in the fabrication of sensing arrays and devices.

关键词： Analytical Chemistry Nanotechnology Physical Chemistry Metallic Materials

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High-power 2-um diode-pumped Tm:YAG laser

High-power 2-um diode-pumped Tm:YAG laser

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solid state Lasers V

作者： Beach, Raymond J. Sutton, Steven B. Honea, E.C. Skidmore, Jay A. Emanuel, Mark A. Lawrence Livermore Natl. Lab. Livermore CA USA

ISBN: (纸本)0819420727

Using a scalable diode end-pumping technology developed at Lawrence Livermore National Laboratory we have demonstrated a compact Tm:YAG laser capable of generating greater than 50 W of cw 2 micrometer laser output power. The design and operational characteristics of this laser, which was built originally for use in assessing laser surgical techniques, are discussed. The 2 micrometer radiation produced by the 3F4 - 3H6 transition of Tm3+ has many practical applications because it is strongly absorbed by water and also because it is an 'eye-safe' wavelength. The strong absorption of 2 micrometer radiation by water makes this transition a very attractive candidate for performing laser surgical procedures as most tissue types are predominately composed of liquid water. The fact that 2 micrometer radiation is considered 'eye-safe' makes this transition attractive for laser range finding and remote sensing applications where other laser wavelengths could pose a safety hazard. At sufficiently high doping densities, Tm3+ exhibits a beneficial two-for-one quantum pump efficiency enabling well developed AlGaAs laser diode arrays to be used as efficient excitation sources. Many applications requiring 2 micrometer laser radiation such as remote sensing, laser radar, anti sensor, sensor spoofing, and OPO pumping have driven the development of diode pumped all solid state TM3+ laser systems because of their potential for efficiency, compactness, and ruggedness. Here we focus on Tm3+:YAG and the scalable diode end-pumping technology developed at LLNL which enables higher average power operation of diode pumped Tm3+ laser systems than has previously been possible. To date we have demonstrated cw operation of this laser to power levels of 51 W. The end-pumping technology used is the same as was previously used to demonstrate a 100 mJ Q-switched Nd:YLF laser.

关键词： solid state lasers

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development of Bi-Spectral InAs/GaSb Type ii Super lattice Image Detectors

Development of Bi-Spectral InAs/GaSb Type II Super lattice I...

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40th Conference on Infrared Technology and applications

作者： Stadelmann, T. Woerl, A. Wauro, M. Daumer, V. Niemasz, J. Luppold, W. Simon, T. Riedel, M. Rehm, R. Walther, M. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany AIM Infrarot Module GmbII D-74072 IIeilbronn Germany

ISBN: (纸本)9781628410075

InAs/GaSb superlattices are characterized by a broken-gap type ii band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.

关键词： InAs/GaSb type ii superlattice infrared image sensor

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2^nd and 3^rd generation thermal imagers based on type-ii superlattice photodiodes

2<SUP>nd</SUP> and 3<SUP>rd</SUP> generation thermal imagers...

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Conference on Infrared and Photoelectronic Imagers and Detector Devices

作者： Rehm, Robert Walther, Martin Schmitz, Johannes Fleissner, Joachim Ziegler, Johann Cabanski, Wolfgang Breiter, Rainer Fraunhofer Inst Appl Solid State Phys Freiburg Germany AIM Infrarot Module GmbH Heilbronn Germany

ISBN: (纸本)0819463736

We report on the development of InAs/GaSb type-ii superlattice focal plane arrays (FPAs) for missile warning systems in airborne platforms. The FPA fabrication technology was developed on the basis of monospectral superlattices for the MWIR (3-5 mu m) spectral range. A monospectral. 288x384 MWIR camera with 24 mu m pixel pitch, a noise equivalent temperature difference (NETD) better than 14 mK and a background-limited performance (BLIP) up to 92 K is demonstrated. Based on the monospectral technology, the first bispectral superlattice camera was realized. The dual color 288x384 superlattice camera features simultaneous, pixel-registered detection of both spectral channels between 3-4 mu m and 4-5 mu m with a NETD better than 30 mK and 17 m-K, respectively. Hence, spatial or temporal registration problems, which are common to most dual color and dual band infrared imagers are solved with the new bispectral MWIR missile alerting sensor.

关键词： InAs/GaSb type-ii superlattice missile warning dual-band dual-color bispectral infrared camera thermal imaging focal plane array

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Photodetector development at Fraunhofer IAF - from LWIR to SWIR operating from cryogenic close to room temperature 43

Photodetector development at Fraunhofer IAF - from LWIR to S...

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Conference on Infrared Technology and applications XLiiI

作者： Daumer, V. Gramich, V. Mueller, R. Schmidt, J. Rutz, F. Stadelmann, T. Woerl, A. Rehm, R. Fraunhofer Inst Appl Solid State Phys IAF Tullastr 72 D-79108 Freiburg Germany

ISBN: (纸本)9781510608559;9781510608566

Photodetectors in the non-visible region of the electromagnetic spectrum are essential for security, defense and space science as well as industrial and scientific applications. The research activities at Fraunhofer IAF cover a broad range in the infrared (IR) regime. Whereas short-wavelength IR (SWIR, <1.7 mu m) detectors are realized by InGaAs/InP structures, InAs/GaSb type-ii superlattice (T2SL) infrared detectors are developed for the spectral bands from mid( MWIR, 3-5 mu m) to long-wavelength IR (LWIR, 8-12 mu m). We report on the extension of the superlattice empirical pseudopotential method (SEPM) to 300 K for the design of LWIR heterostructures for operation near room temperature. Recently, we have also adapted heterostructure concepts to our well established bi-spectral T2SL MWIR detector resulting in a dark current density below 2 x 10-9 A/cm(2) for a cut-off wavelength close to 5 mu m. Finally, we present first results obtained with a gated viewing system based on our InGaAs/InAlAs/InP avalanche photodiode arrays.

关键词： SWIR MWIR LWIR T2SL InAs/GaSb type-ii superlattice photodetector InGaAs InAlAs avalanche photodiode APD

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Laser based manufacturing of high-accuracy electrodes in brittle materials

Laser based manufacturing of high-accuracy electrodes in bri...

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Conference on Photon Processing in Microelectronics and Photonics ii

作者： Kulik, C Ostendorf, A Meyer, F Laser Zentrum hannover EV D-30419 Hannover Germany

ISBN: (纸本)0819447773

Dielectric sensors with smallest electrode structures are used to monitor several technical applications. Thus, durable substrate materials are essential for the exploitation of the sensors in hostile process environment. Here, ceramics and different glasses show ideal material properties, but are difficult-to-machine in the micrometer range. UV-laser beam sources are well suited for an economic manufacturing of micro-structures in these brittle materials. Especially, advanced laser tools like excimer- and frequency converted solid-state lasers show excellent machining results. This paper presents the development of new laser based production techniques and innovative process chains for the fabrication of distinctive electrode structures in high stable materials. Two different machining concepts are shown. A conductive Indium Tin-Oxide (ITO) layer with a thickness of about 600nm has been structured with a KrF excimer laser (lambda = 248 nm, H = 5 J/cm(2)), without damaging the underlying borosilicate glass substrate. The dimension of the electrodes and insulation channels of the sensor are as small as 50mum. For the second approach of manufacturing a dielectric sensor, aluminum oxide as a bulk substrate materials has been machined with the same laser type. No thermal damage was observed by an operating fluence H = 20 J/cm(2). The obtained extreme durable embedded-electrode-type sensor can be completed by. filling the cavity with conductive material by standard electroplating techniques. For the manufacturing process, a high flexible NC-controlled machining concept is presented, which allows a time and pulse minimized fabrication as well, as an optimization of the surface,quality of. the micro-sensor, including a process. optimization via simulation.

关键词： laser based micro-machining brittle materials sensor manufacturing UV-laser electrodes

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Characterization of the column-based priority logic readout of Topmetal-ii^- CMOS pixel direct charge sensor

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JOURNAL OF INSTRUMENTATION 2017年第3期12卷 C03004-C03004页

作者： An, M. Zhang, W. Xiao, L. Gao, C. Chen, C. Han, M. Huang, G. Ji, R. Li, X. Liu, J. Mei, Y. Pei, H. Sun, Q. Sun, X. Wang, K. Yang, P. Zhou, W. Cent China Normal Univ Key Lab Quark & Lepton Phys MOE PLAC Wuhan 430079 Hubei Peoples R China Lawrence Berkeley Natl Lab Nucl Sci Div Berkeley CA 94720 USA Chinese Acad Sci Inst High Energy Phys Beijing 100049 Peoples R China Southern Methodist Univ Dept Phys Dallas TX 75205 USA

We present the detailed study of the digital readout of Topmetal-ii- CMOS pixel direct charge sensor. Topmetal-ii- is an integrated sensor with an array of 72 x 72 pixels each capable of directly collecting external charge through exposed metal electrodes in the topmost metal layer. In addition to the time-shared multiplexing readout of the analog output from Charge Sensitive Amplifiers in each pixel, hits are also generated through comparators in each pixel with individually adjustable thresholds. The hits are read out via a column-based priority logic structure, retaining both hit location and time information. The in-array column-based priority logic features with a full clock-less circuitry hence there is no continuously running clock distributed in the pixel and matrix logic. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments. We studied the detailed working behavior and performance of this readout, and demonstrated its functional validity and potential in imaging applications.

关键词： Electronic detector readout concepts (solid-state) Front-end electronics for detector readout Pixelated detectors and associated VLSI electronics VLSI circuits

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A high resolution solid state Charge Coupled Device (CCD) space borne earth imager

A high resolution solid state Charge Coupled Device (CCD) sp...

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applications of Electronic Imaging Systems 1978

作者： Hirschberg, Irving Imaging Systems Division Fairchild Camera and Instrument Corp. SyossetNY11791 United States

A solid state (Charge Coupled Device) imaging system is described which satisfies the requirement for multispectral, high resolution, real time imagery. The system, using an earth resources survey satellite as its platform is configured to yield a 10 meter ground resolution with a 50 kilometer swath width at approximately 1000 km altitude. Four spectral bands ranging from 0.5 to 1.1 μm have been selected and are implemented by optically butting three 1728 pixel linear arrays (5184 pixel per band) on appropriate beam splitting prisms. The device employed, the Fairchild CCD 121H, shown in Figure 1, is a monolithic self-scanned image sensor utilizing two phase, buried n-channel CCD technology. The device has an element-to-element pitch of 13 μm (approximately 2000 pixel/inch) and has been demonstrated to have a wide dynamic range (2500:1), Figure 2, low noise equivalent exposure and dimensionally precise photosite spacing. Consideration of focal plane design, geometric accuracy, image registration, temperature control, optical design, and noise figures are discussed. Particular emphasis has been placed on the unique properties of CCD detectors which allow for specialized post processing of the video for dealing with low contract scenarios. The paper concludes with new trends in specialized time delay and integration (TDI) mode imaging systems now under study and development at Fairchild. © 1978 SPIE. All rights reserved.

关键词： Charge coupled devices

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