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Sr 6Y(PO4)5 : Nd³⁺ a novel whitlockite-type phosphor for optical temperature sensing applications: Synthesis and luminescence properties

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CERAMICS INTERNATIONAL 2024年第13期50卷 22936-22946页

作者： Mokni, Ines Slimi, Sami Badri, Abdessalem Sole, Rosa Maria Aguilo, Magdalena Diaz, Francesc Ayed, Brahim Mateos, Xavier Univ Monastir Fac Sci Lab Physicochem Mat LR01ES19 Monastir Tunisia Univ Rovira & Virgili URV Fis & Cristal Log Mat FiCMA Marcel Li Domingo 1 Tarragona 43007 Spain Univ Monastir Fac Sci Lab Interfacial & Adv Mat LR11ES55 Monastir 5000 Tunisia

Active research in science and technology is improving the development of materials that emit infrared light, with the aim of better optical thermometric sensors. In this paper we report the synthesis of a new NIR-emitting phosphate phosphor, Sr6Y(PO4)(5):Nd3+ (SYP: Nd3+), at differing concentrations of Nd3+ using a conventional solid-state reaction route. X-ray diffraction analysis showed that the prepared phosphors exhibit a singular phase with a monoclinic whitlockite structure (space group I2/a). SEM images show micrometer-sized particle. FTIR and Raman spectroscopies confirm the presence of PO43- groups in the examined phosphates. Luminescence features, comprising emission spectra, concentration quenching, and fluorescence lifetime, were investigated for the prepared SYP: Nd3+ samples at various Nd3+ doping concentrations. Excited at 808 nm, the phosphors emitted near-infrared light with four distinct bands corresponding to specific Nd3+ transitions from F-4(3/2) to (I-4(9/2), I-4(11/2) and I-4(13/2)) and F-4(5/2) to I-4(11/2), falling within the first and second biological windows (NIR-I and NIR-ii). Importantly, Nd3+ emission characteristics are affected by concentration and temperature. The powders' effectiveness as optical temperature sensors using fluorescence intensity ratio (FIR) between coupled and non-coupled levels was researched across 303-473 K, resulting in two distinctive FIR-based temperature sensor strategies employing emissions at 874.8 nm (F-4(3/2) -> I-4(9/2)) and 956 nm (F-4(5/2) -> I-4(11/2)) transitions, all within the first biological window for excitation and emission. Using this method, SYP: Nd3+ revealed a notably elevated sensitivity of approximately 1.16 %K-1 at 303 K, surpassing other Nd3+-doped materials when stimulated within the infrared range. These results strongly suggest the prospective applicability of the analyzed material in monitoring the temperature of biological systems.

关键词： Whitlockite-type phosphate Near infrared excitation Trivalent neodymium ions Optical thermometry Biological application

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Fast Transforms for Acoustic Imaging-Part ii: applications

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IEEE TRANSACTIONS ON IMAGE PROCESSING 2011年第8期20卷 2241-2247页

作者： Ribeiro, Flavio P. Nascimento, Vitor H. Univ Sao Paulo Dept Elect Syst Engn Escola Politecn BR-05508900 Sao Paulo Brazil

In Part I ["Fast Transforms for Acoustic Imaging-Part I: Theory," IEEE TRANSACTIONS ON IMAGE PROCESSING], we introduced the Kronecker array transform (KAT), a fast transform for imaging with separable arrays. Given a source distribution, the KAT produces the spectral matrix which would be measured by a separable sensor array. In Part ii, we establish connections between the KAT, beamforming and 2-D convolutions, and show how these results can be used to accelerate classical and state of the art array imaging algorithms. We also propose using the KAT to accelerate general purpose regularized least-squares solvers. Using this approach, we avoid ill-conditioned deconvolution steps and obtain more accurate reconstructions than previously possible, while maintaining low computational costs. We also show how the KAT performs when imaging near-field source distributions, and illustrate the trade-off between accuracy and computational complexity. Finally, we show that separable designs can deliver accuracy competitive with multi-arm logarithmic spiral geometries, while having the computational advantages of the KAT.

关键词： Acoustic imaging array imaging array processing fast transform regularized least-squares sparse reconstruction

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development of Ultra-Fast Silicon Detectors for 4D tracking

Development of Ultra-Fast Silicon Detectors for 4D tracking

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11th International Conference on Position Sensitive Detectors (PSD)

作者： Staiano, A. Arcidiacono, R. Boscardin, M. Betta, G. F. Dalla Cartiglia, N. Cenna, F. Ferrero, M. Ficorella, F. Mandurrino, M. Obertino, M. Pancheri, L. Paternoster, G. Sola, V. Ist Nazl Fis Nucl Sez Torino Via P Giuria 1 Turin Italy Univ Trento Dipartimento Fis Via Sommarive 14 Povo Trent Italy Fdn Bruno Kessler Ctr Mat & Microsyst Via Sommarive 18 Povo Trent Italy Univ Turin Dipartimento Fis Via P Giuria 1 Turin Italy Univ Piemonte Orientale Dipartimento Sci Farmaceut Largo Donegani 2-3 Novara Italy

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of similar to 10 ps and similar to 10 mu m with a 50 mu m thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor similar to 10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 mu m thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

关键词： Charge transport and multiplication in solid media Detector modelling and simulations ii (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Particle tracking detectors (solid-state detectors) Radiation-hard detectors

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A 1M-pixe1 progressive-scan 60-frame per second IT-CCD image sensor

A 1M-pixe1 progressive-scan 60-frame per second IT-CCD image...

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solid state sensor arrays: development and applications 1997

作者： Kawai, Shin'ichi Hatano, Keisuke Suwazono, Shinobu Futamura, Fumihiro Shohji, Daisuke Katoh, Satoshi Nakashiba, Yasutaka Morimoto, Michihiro Takeuchi, Eiji Arai, Kouichi Kawamura, Toshihiro Taniji, Yukio Orihara, Kozo Teranishi, Nobukazu Hokari, Yasuaki Microelectronics Research Labs. NEC Corporation 1120 Shimokuzawa Sagamihara Kanagawa229-11 Japan ULSI Device Development Labs. NEC Corporation 1120 Shimokuzawa Sagamihara Kanagawa229-11 Japan System Micro Division NEC Corporation 1120 Shimokuzawa Sagamihara Kanagawa229-11 Japan

A 1M-pixel progressive-scan interline-transfer (IT) CCD image sensor has been developed. It features high resolution (1024 × 1024), real-timespeed (60 frame/sec) and square pixels (10μm × 10μm). A real-time speed was obtained by a pair of H-CCDs, located at the upper and lower of the image area and driven at 43MHz. Charges of the upper and lower halves of the image area are output separately by using the upper and lower H-CCDs, respectively. This operation enables a 1024 × 1024 progressive scan at 60 frame/sec. The device can be operated in a 512 × 512 progressive scan at 120 frame/sec by combining the charges in each of two vertically-adjacent pixels and two horizontally-adjacent pixels. Furthermore, a 1024 × 1024 interlace scan at 120 field/sec is also acceptable for either frame-integration or field-integration. The device can also be operated in a 1024 × 1024 progressive scan at 30 frame/sec by using only one of the H-CCD. © 1997 SPIE. All rights reserved.

关键词： Pixels

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A biomedical multiprocessor SoC for closed-loop neuroprosthetic applications

A biomedical multiprocessor SoC for closed-loop neuroprosthe...

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IEEE International Conference on solid-state Circuits (ISSCC)

作者： Tung-Chien Chen Kuanfu Chen Zhi Yang Kimberly Cockerham Wentai Liu National Taiwan University Taipei Taiwan University of California Santa Cruz CA Stanford University Stanford CA

Successful proof-of-concept laboratory experiments on cortically controlled motor prostheses, brain pacemakers and hippocampal prostheses motivate continued development for neural prosthetic systems. Advances in implantable electrode arrays and miniaturized multichannel recording ICs enable long-duration, wireless and closed-loop experiments on freely moving subjects. To further improve clinically viable neural prostheses, the bulk associated with external systems must be eliminated. Thus a miniaturized processing-and-controlling system interfacing recording ICs and actuators in real time is required.

关键词： Neural prosthesis Sorting Principal component analysis Epilepsy Prosthetics sensor arrays Covariance matrix Logic gates Feature extraction Implants

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sensor systems-interface between environment and application

Sensor systems-interface between environment and application

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European Conference on solid-state Circuits (ESSCIRC)

作者： D. Hammerschmidt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

The rapidly growing market for sensor systems on the one hand boosts the development of new sensor principles and technologies [1,2], on the other hand the increasing fields of use require an integration of these sensors on system level under a wide spread of application conditions. This paper will discuss the main tasks that have to be solved by the electronic system, which interfaces the sensor and the application environment [3,4]. On side of the sensor physical points of view dominate the requirements, which, e.g., call for low noise readout, high gain, minimum sensor loading, and compensation of crossensitivities. The application requires completely different considerations, like compatibility with former solutions, standardized interfaces, low power consumption or networking capability as well as cost efficiency. Between these completely different classes of requirements electronic circuitry operates as a mediator featuring sophisticated readout electronics for each type of sensor, intermediate signal processing layers, and customisable interfaces that are usable for all kinds of sensors. After the general consideration of the above topics some examples of sensor systems will be presented and the individual solutions of the mentioned challenge will be discussed from the circuit designers point of view. At last some approaches for future developments of sensor systems will be presented.

关键词： sensor systems sensor arrays Magnetic sensors sensor systems and applications Chemical sensors Costs Consumer electronics Circuits Pressure measurement Manufacturing

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Fabrication and Characterization of a Hydrogen sensor Based on Palladium Nanowires

Fabrication and Characterization of a Hydrogen Sensor Based ...

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International Conference on solid state sensors and Actuators (TRANSDUCERS)

作者： V. La Ferrara B. Alfano E. Massera I. Nasti G. Di Francia ENEA Research Center Località Granatello Portici Italy University of Naples Federico II Napoli Italy

A hydrogen sensor based on an array of palladium nanowires has been realized starting from a silicon substrate coated with a Si 3 N 4 where an interdigitated electrode pattern has been fabricated using photolithography. Saturated palladium solution has been prepared and array of palladium nanowires has been formed applying at the electrodes a voltage signal. As grown Pd nanowires are conductive and do not exhibit any response to hydrogen. Their response can be activated after a treatment which modifies physical properties of Pd nanowires, improving their response. The array has been tested towards 4% H 2 in nitrogen carrier. We have observed that the device response, at room temperature, is quite strong and reversible so that the sensor device seems to be useful for those applications where the Lower Explosive Limit needs to be controlled.

关键词： Fabrication Hydrogen sensor phenomena and characterization Palladium Nanowires sensor arrays Electrodes Temperature sensors Silicon Lithography

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Light emitting diode arrays for consumer and medical applications

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Materials science & engineering. B, solid-state materials for advanced technology 1998年第1-3期B51卷 90-93页

作者： Rys, Andrew Piotrowski, Tadeusz Sobczynski, Radoslaw Kansas State Univ Manhattan United States

development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected.

关键词： Light emitting diodes

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New readout integrated circuits for position sensitive solid state detectors

New readout integrated circuits for position sensitive solid...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： T.O. Tumer V.B. Cajipe R.F. Calderwood M. Clajus S. Hayakawa Shi Yin NOVA Research and Development Inc. Riverside CA USA

We have been developing custom multi channel mixed signal readout integrated circuits (ICs) for advanced position sensitive solid-state radiation detector arrays for applications ranging from X-ray astronomy and medical imaging to security and industrial inspection. Readout ICs are an integral part of position-sensitive semiconductor detectors for X-ray, gamma-ray and charged particle imaging. Different detector applications require custom IC, which is typically designed for a specific detector array. Therefore, it is important to develop generic ICs to meet a range of applications in different complementing fields. To achieve this aim NOVA has been developing generic ICs for different fields of applications, which embodies versatile and adaptable functions as well as selectable features. An overview of generic ICs developed at NOVA is presented here. Each chip described targets a complementing application field with versatile functions and features.

关键词： solid state circuits Position sensitive particle detectors Application specific integrated circuits sensor arrays X-ray imaging Radiation detector circuits Astronomy Biomedical imaging Security Inspection

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Integrated readout electronics: enabling advanced applications of position-sensitive solid-state radiation detectors

Integrated readout electronics: enabling advanced applicatio...

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IEEE Symposium on Nuclear Science (NSS/MIC)

作者： V.B. Cajipe R.F. Calderwood M. Clajus S. Hayakawa T.O. Tumer Shi Yin NOVA Research and Development Inc. Riverside CA USA

As applications of advanced solid-state radiation detector arrays proliferate across disciplines ranging from X-ray astronomy and medical imaging to security and industrial inspection, the relative scarcity of low-noise, multi-channel integrated circuits (ICs) needed to read out these arrays has become increasingly apparent. In fact, readout ICs are now regarded to be an integral part of position-sensitive semiconductor detectors for X-ray and gamma-ray imaging. Because the requirements of various detector applications tend to be diverse, a custom IC is typically designed for a specific detector array. This often lengthens the time and raises the cost of system development. To help close the readout technology gap and facilitate advances in this field, NOVA has been formulating strategies for instrumenting different detectors of a given application category with the same "generic" IC which embodies common functions as well as selectable features. A brief overview of possible approaches to such generic ICs will be given. Within this context, accomplishments and ongoing efforts at NOVA in developing front-end ICs for various detector architectures and signal-processing scenarios will be described. We will especially consider the case of ICs used in conjunction with position-sensitive CZT detectors, implemented in traditional soldered lead or flip-chip connection geometries, to perform spectroscopic, energy-binning or current-mode type measurements

关键词： Readout electronics solid state circuits Radiation detectors sensor arrays Application specific integrated circuits X-ray imaging Position sensitive particle detectors Radiation detector circuits Astronomy Biomedical imaging

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