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检索条件"任意字段=Solid State Sensor Arrays: Development and Applications II"

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sensor systems-interface between environment and application

Sensor systems-interface between environment and application

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European Conference on solid-state Circuits (ESSCIRC)

作者： D. Hammerschmidt Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany

The rapidly growing market for sensor systems on the one hand boosts the development of new sensor principles and technologies [1,2], on the other hand the increasing fields of use require an integration of these sensors on system level under a wide spread of application conditions. This paper will discuss the main tasks that have to be solved by the electronic system, which interfaces the sensor and the application environment [3,4]. On side of the sensor physical points of view dominate the requirements, which, e.g., call for low noise readout, high gain, minimum sensor loading, and compensation of crossensitivities. The application requires completely different considerations, like compatibility with former solutions, standardized interfaces, low power consumption or networking capability as well as cost efficiency. Between these completely different classes of requirements electronic circuitry operates as a mediator featuring sophisticated readout electronics for each type of sensor, intermediate signal processing layers, and customisable interfaces that are usable for all kinds of sensors. After the general consideration of the above topics some examples of sensor systems will be presented and the individual solutions of the mentioned challenge will be discussed from the circuit designers point of view. At last some approaches for future developments of sensor systems will be presented.

关键词： sensor systems sensor arrays Magnetic sensors sensor systems and applications Chemical sensors Costs Consumer electronics Circuits Pressure measurement Manufacturing

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Prototype of 2D direct x-ray a-SiN:H sensor array

Prototype of 2D direct x-ray a-SiN:H sensor array

引用

Conference on solid state sensor arrays - development and applications ii

作者： Popov, IA Van Doorselaer, G Van Calster, A De Smet, H Callens, F Boesman, E State Univ Ghent B-9000 Ghent Belgium

ISBN: (纸本)0819427411

Study of the possible use of a-SIN: H thin films for 2D direct x-ray sensor arrays lead to the development of simple prototype. The sensor array is a 100x100 array of simple cross-over silicon rich a-SiN:H thin film diodes with sizes 200x200 mu m formed on a 2" glass substrate. There are neither switching elements nor x-ray conversion layer involved which leads to extremely simple 2 mask processing for the whole array. Specific behavior of the a-SiN:H sensing diodes under x-ray irradiation requires special attention to be paid to the driving strategy and read out electronics.

关键词： amorphous silicon active matrix TFD x-ray sensor

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Versatile building-block architecture for large area, high performance CCD imagers

Versatile building-block architecture for large area, high p...

引用

Conference on solid state sensor arrays - development and applications ii

作者： Theuwissen, A Beenhakkers, M Dillen, B Folkerts, HO Heyns, H Korthout, L Kreider, G Opmeer, P Peek, H Roks, E Rosner, H van der Sijde, A Vledder, F Philips Imaging Technol NL-5656 AA Eindhoven Netherlands

ISBN: (纸本)0819427411

A bouwblok (building-block) concept is described which allows one to fabricate several large area CCD image sensors from a single mask set. The size of the various imagers can differ both horizontally as well as vertically. The new method drastically reduces the development time and the associated cost of a new sensor. Because all imagers use of same basic pixel structure, the characteristics of new configurations can be fairly well predicted.

关键词： CCD imagers solid-state imaging modular concept mask stitching high performance imaging digital photography

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Modeling and estimation of FPN components in CMOS image sensors

Modeling and estimation of FPN components in CMOS image sens...

引用

Conference on solid state sensor arrays - development and applications ii

作者： El Gamal, A Fowler, B Min, H Liu, XQ Stanford Univ Informat Syst Lab Stanford CA 94305 USA

ISBN: (纸本)0819427411

Fixed pattern noise (FPN) for a CCD sensor is modeled as a sample of a spatial white noise process. This model is, however, not adequate for characterizing FPN in CMOS sensors, since the readout circuitry of CMOS sensors and CCDs are very different. The paper presents a model for CMOS FPN as the sum of two components: a column and a pixel component. Each component is modeled by a first order isotropic autoregressive random process, and each component is assumed to be uncorrelated with the other. The parameters of the processes characterize each component of the FPN and the correlations between neighboring pixels and neighboring columns for a batch of sensors. We show how to estimate the model parameters from a set of measurements, and report estimates for 64x64 passive pixel sensor (PPS) and active pixel sensor (APS) test structures implemented in a 0.35 micron CMOS process. High spatial correlations between pixel components were measured for the PPS structures, and between the column components in both PPS and APS. The APS pixel components were uncorrelated.

关键词： CMOS image sensor fixed pattern noise nonuniformity image sensor characterization

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Improving resolution of solid-state linear array X-Ray detectors

Improving resolution of solid-state linear array X-Ray detec...

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Conference on solid state sensor arrays - development and applications ii

作者： Borras, G Odet, C Vuorinen, K Gaffiot, F Jacquemod, G Inst Natl Sci Appl CREATIS F-69621 Villeurbanne France

ISBN: (纸本)0819427411

Linear solid-state detectors are nowadays a widespread media in industrial and medical X-ray imaging. The resolution reached with this systems has been largely improved in this past years, but is still too poor for some high resolution applications. We first have carried out an optimization of the detector characteristics through a behavioral simulation using a Hardware Description Language (HDLA(TM)). Furthermore, our work concerned the resolution enhancement for this kind of detectors via signal processing. Our approach takes into account the modeled point spread function (PSF) of the system. This modeled PSF is obtained with a new edge technique. The knowledge about the system response is used in a restoration scheme in order to improve the response of the detector to the high frequencies in the digital image. The restoration problem is an ill posed problem and uses an inverse Wiener filtering. Another intrinsic limitation of solid-state detectors is the spatial sampling step. In order to overcome this problem, we also tested the feasibility of a finer sampling of the acquired image, by interlacing several slightly shifted acquisitions of the same test object. The restoration applied to this finer sampled signal results in a resolution enhancement that is theoretically impossible to reach with a single detector acquisition. Some experimental results obtained on a variable bar-space pattern phantom are presented. This kind of phantom allows for a precise evaluation of the Modulation Transfer Function (MTF) on the acquired and processed images. The contribution of the image processing to the resolution enhancement can thus be quantified.

关键词： simulation behavioral CCD X-ray MTF image restoration

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A memory read-out approach for a 0.5 μm CMOS image sensor

A memory read-out approach for a 0.5 μm CMOS image sensor

引用

Conference on solid state sensor arrays - development and applications ii

作者： Hoekstra, W van der Avoird, A Kole, M Schrooten, GG Schaeffer, CJ Philips Imaging Technol Eindhoven Netherlands

ISBN: (纸本)0819427411

In image sensors with passive pixels the column capacitance is large compared to the capacitance of the pixel. The charge-to-voltage conversion occurs in the column amplifier relatively far from the pixel. This may result in a high sensitivity to interference, especially in case other electronic circuitry is located on the same chip. Two types of CIF CMOS imagers are presented that use different read-out options to counter this effect. Both designs use differential read-out as DRAM's do. This means that the pixel is compared to a reference cell. The first type uses a reference cell on the same row;the second type utilizes a fully symmetrical way of read-out, similar to digital memories by having its reference on the same column. Furthermore, two other means of image quality improvement are applied. A boost circuit is used to generate a negative voltage for driving the selecting transistor to insure that it is completely switched on during pixel reset. By this, threshold differences between pixels do not affect the reset voltage. The second is a well thought-out column amplifier that calibrates its offset before reading the pixel information.

关键词： Image sensors

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A time delay and integration image sensor with high speed output architecture

A time delay and integration image sensor with high speed ou...

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Conference on solid state sensor arrays - development and applications ii

作者： Weale, GP Flood, CJ Dykaar, DR DALSA Inc Waterloo ON N2V 2E9 Canada

ISBN: (纸本)0819427411

Today's imaging systems utilize fast operation to increase their throughput. At high line rates the illumination required to collect a reasonable image becomes prohibitive. Time delay and integration (TDI) offers greatly enhanced responsivity to allow faster operation in terms of line rates. This combination of sensitivity and speed is unmatched in other sensor architectures. The standard multi-stage source follower output amplifier usually involves a trade off between speed and sensitivity through sizing of the first FET. We present a high bandwidth (>250 MHz) and sensitivity (>5 mu V/e), scaleable architecture for readout of TDI sensors. A key component of this architecture is the minimization of output amplifier load and parasitic capacitance. The methodologies used in the design and modeling of the output structure will be presented. This basic model has been confirmed over a range of device dimensions. A 4096 element, multi-tap TDI image sensor incorporating this architecture has been fabricated using a standard CCD process. Discrete and in-camera measurements will be presented demonstrating operation at >100 kHz line rates and with >300 V/(mu J/cm(2)) peak responsivity. Methods of controlling and reducing the stray loading on the sensor output will also be discussed.

关键词： CCD charge coupled device high speed output TDI

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Design and characterization of CMOS APS imagers on two different technologies

Design and characterization of CMOS APS imagers on two diffe...

引用

Conference on solid state sensor arrays - development and applications ii

作者： Cavadore, C Solhusvik, J Magnan, P Gautrand, A Degerli, Y Lavernhe, F Farre, J Saint-Pe, O Davancens, R Tulet, M SUPAERO Dept Elect F-31055 Toulouse 4 France

ISBN: (纸本)0819427411

In this paper, we present experimental results from measurements on CMOS APS imager designed by CIMI-SUPAERO on two different technologies. In both cases, pixels with photoMos and photodiode structures have been designed. The first circuit has been developed using a standard CMOS DLP/DLM 1.2 mu m process from Austria Micro Systems. The detector array consists of 32x32 square pixels with 50 mu m pixel pitch;fill factor is 75 % for photodiode (PD) and 50 % for photoMos (PM). The circuit is also including row and column address decoders and the readout circuitry so as to perform on-chip correlated double-delta sampling to reduce column to column fixed pattern noise. Two other chips have been developed with a standard CMOS SLP/DLM process from MIETEC with 0.7 mu m design rules, which includes a 128x128 pixels array, with 21 mu m pixel pitch and analogue readout circuitry. Among 10 different arrays, no faulty one was observed for both circuits. In this paper, we compare both performances of 32x32 pixels and 128x128 pixels in terms of dark current, quantum efficiency, conversion gain, dynamic range, linearity and spatial uniformity.

关键词： Active Pixel sensor APS CMOS image sensors characterisation

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Large format CID x-ray image sensor

Large format CID x-ray image sensor

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Conference on solid state sensor arrays - development and applications ii

作者： Carbone, J Alam, Z Borman, C Czebiniak, S Ziegler, H CIDTEC Liverpool NY 13088 USA

ISBN: (纸本)0819427411

A large format (31 x 23 mm(2) display) CID imager module capitalizes on CID large well capacity and radiation resistance to image dental x-rays. The module, which consists of the imager, conversion phosphor and ancillary electronics, is encapsulated in a 40 x 28 x 5 mm(3) robust package that is lightproof, moisture-proof and meets FDA and RFL/EMI standards. Data exposure and readout is simple. The imager normally exists in an active reset mode until X-ray application automatically places the imager into a charge integration mode. Readout begins immediately upon completion of the x-ray exposure or manual application of an external trigger source. The imager returns to the reset mode once the data read out is complete. Pixels are arranged in an SVGA compatible 800(H) x 600(V) format. Each pixel is square and 38.5 microns/side. The imager is coated using a proprietary phosphor deposition process that results in a limiting resolution of 9 LP/mm from an X-ray illumination source. Better than 2,000:1 dynamic range and shot-noise limited operation is achieved. Direct X-ray detection and attendant noise is minimized via the phosphor and epitaxial layer that lies beneath the pixel array. The imager/module architecture and electro-optical performance are described in detail here in.

关键词： CIDs dental X-ray electronic imaging radiation-hardened charge transfer device

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Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated, linear charge-coupled devices

Charge-transfer-efficiency (CTE) measurement techniques appl...

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Conference on solid state sensor arrays - development and applications ii

作者： Dutton, TE Woodward, WF Lomheim, TS Aerospace Corp Sensor Syst Subdiv Los Angeles CA 90009 USA

ISBN: (纸本)0819427411

Charge-Transfer-Efficiency (CTE) is a parameter that is associated with the optical performance and radiometric accuracy of a Charge-Coupled Device (CCD). While modern CCD's are typically quoted as having CTE>0.99999, we show that a) this efficiency can be degraded by exposure to energetic protons and b) the measured efficiency, at least in the case of irradiated devices, is dependent on the size of the signal being transferred. A comparison of two techniques of CTE measurement is presented, with emphasis on an Fe-55 X-ray charge-generation and collection technique tailored especially for use with linear CCD's. While our technique follows the same general X-ray method widely used to characterize area CCD's, its implementation, including the processing of the resulting experimental data, is somewhat novel. The X-ray technique requires no special device circuitry or equipment and, in our configuration, may be used on virtually any linear or bilinear CCD;the same general technique is used on area arrays. It is shown that the technique is appropriate for characterizing small-signal CTE with or without a high background. It is also shown that the electrical injection CTE, while requiring the injection circuitry to be designed and built-in to the CCD structure, is more appropriate for large-signal CTE measurement. Data are presented showing experimental pre-and post-irradiation CTE measured as a function of signal level and background level for a two-phase linear CCD. Additionally, it is shown that in our tests, the CTE degraded even at very small accelerated doses (<10 kRad(Si) of ionizing proton dose), but further degradation was at least partly compensated by an enhanced background due to increasing dark currents.

关键词： charge transfer efficiency CTE X-ray charge coupled device CCD electrical injection proton irradiation

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