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检索条件"任意字段=Solid State Sensor Arrays: Development and Applications II"
247 条 记 录,以下是201-210 订阅
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A high speed linear CCD sensor with pinned photodiode photosite for low lag and low noise imaging
A high speed linear CCD sensor with pinned photodiode photos...
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Conference on solid state sensor arrays - development and applications ii
作者: Fox, EC Nixon, O Agwani, MS Dykaar, DR Mantell, TJ Sabila, RW DALSA Inc Waterloo ON N2V 2E9 Canada
Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag... 详细信息
来源: 评论
Study of pixel structure and layout for CMOS Active Pixel Image sensor
Study of pixel structure and layout for CMOS Active Pixel Im...
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Conference on solid state sensor arrays - development and applications ii
作者: iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan
Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using... 详细信息
来源: 评论
Light emitting diode arrays for consumer and medical applications
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MATERIALS SCIENCE AND ENGINEERING B-solid state MATERIALS FOR ADVANCED TECHNOLOGY 1998年 第1-3期51卷 90-93页
作者: Rys, A Piotrowski, T Sobczynski, R Kansas State Univ Dept Elect & Comp Engn Manhattan KS 66506 USA Inst Electron Technol PL-02668 Warsaw Poland Hadaspectrum PL-04831 Warsaw Poland
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ... 详细信息
来源: 评论
Light emitting diode arrays for consumer and medical applications
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Materials science & engineering. B, solid-state materials for advanced technology 1998年 第1-3期B51卷 90-93页
作者: Rys, Andrew Piotrowski, Tadeusz Sobczynski, Radoslaw Kansas State Univ Manhattan United States
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ... 详细信息
来源: 评论
solid state sensor arrays: development and applications
Solid State Sensor Arrays: Development and Applications
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solid state sensor arrays: development and applications 1997
The proceedings contain 27 papers. The topics discussed include: greater-than-90% QE in visible spectrum perceptible from UV to near-IR Hamamatsu thinned back-illuminated CCDs;charge-coupled-device fiber optic taper a...
来源: 评论
Cross-sensitivity evaluation of chemical sensors for electronic tongue: determination of heavy metal ions
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sensorS AND ACTUATORS B-CHEMICAL 1997年 第1-3期44卷 532-537页
作者: Vlasov, Y Legin, A Rudnitskaya, A St Petersburg State Univ Dept Chem St Petersburg 199034 Russia
The development of the promising new field of sensor applications, multisensor arrays for liquid analysis based on the principles of the electronic tongue, implies some new demands on sensor material research and deve... 详细信息
来源: 评论
A new generation of scientific CCD sensors
A new generation of scientific CCD sensors
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Conference on solid state sensor arrays - development and applications
作者: Heyes, PS Pool, PJ Holtom, R EEV Ltd Solid State Imaging 106 Waterhouse Lane Chelmsford Essex CM1 2QU United Kingdom
The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific ... 详细信息
来源: 评论
Contact-type color image sensor using three LED switching method
Contact-type color image sensor using three LED switching me...
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Conference on solid state sensor arrays - development and applications
作者: Hamaguchi, T Yamashita, H Ohta, A Matsumoto, T Saito, M Mitsubishi Electric Corp. (Japan)
We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the ph... 详细信息
来源: 评论
The color cross-talk simulation analysis for image sensor
The color cross-talk simulation analysis for image sensor
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Conference on solid state sensor arrays - development and applications
作者: Yamaguchi, T Yamashita, H Ihara, H iida, Y Ioue, I Nozaki, H ULSI Research Center Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan
The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color... 详细信息
来源: 评论
An 800k-pixel color CMOS sensor for consumer still cameras.
An 800k-pixel color CMOS sensor for consumer still cameras.
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Conference on solid state sensor arrays - development and applications
作者: Hurwitz, JED Denyer, PB Baxter, DJ Townsend, G VLSI Vision Ltd Aviation House 31 Pinkhill Edinburgh United Kingdom
An 800k-pixel Active Pixel device has been developed for use in a Digital Still Camera application. A mode of operation has been developed to cancel the problems of Fixed Patterned Noise (FPN) and dark current inheren... 详细信息
来源: 评论