Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag...
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ISBN:
(纸本)0819427411
Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag, and high levels of fixed pattern noise (FPN) when operated with electronic shuttering (exposure control). We have addressed these performance issues by replacing the photodiode photosites with pinned photodiode (PPD) photosites. In the PPD the n+ region of the conventional photodiode is replaced by a n region and a shallow highly doped p region - the surface potential in the photosite is pinned such that the photosite behaves as an ungated buried channel well. The high quantum efficiencies associated with photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise. We have developed PPD processes for two different photosite architectures. In the first architecture, charge is generated in the PPD and immediately spills to an adjacent gated integration well. In the second architecture, the charge is generated and stored in the PPD. Each of the architectures can be configured to allow for antiblooming/electronic shuttering. Both of the PPD processes and their associated architectures have been characterized, and order of magnitude reductions in image lag have been observed for PPD photosites relative to conventional photodiodes. No degradation in QE, PRNU, or well capacity has been observed. One of the PPD processes has been implemented in a family of high speed, quad output, linear sensors with 100 MHz data rates. Performance results are presented.
Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using...
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ISBN:
(纸本)0819427411
Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive. Therefore, pixel size shrinkage using relatively rough design rule have been studied for reduction of the chip cost. We have already reported about small pixel structure by replacement of row-select transistor by row-select capacitor, by omission of reset transistor with forward bias reset operation, and by omission of reset transistor with pinned-buried reset channel. We have also reported about small pixel by high packing density layout named "I-shaped cell" and its zigzag layout. However, these pixel shrinkage have some disadvantages. In this paper, we propose a novel pixel structure driven by pulse operation of drain line for row select and reset. Conventional row select structure, row select transistor or row select capacitor, is omitted by the row-select channel that contains low impurity concentration and has no gate structure. Moreover, conventional reset transistor is also replaced by reset channel structure in like manner. These structures and triple level pulse operation of drain realize quite simple pixel structure in which amplification transistor is the only gate structure. A large fill factor of 37% is obtained by this structure, in 5.6 mu m x 5.6 mu m pixel designed by 0.7 mu m rule.
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ...
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development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected. (C) 1998 Elsevier Science S.A. All rights reserved.
development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in ...
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development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected.
The proceedings contain 27 papers. The topics discussed include: greater-than-90% QE in visible spectrum perceptible from UV to near-IR Hamamatsu thinned back-illuminated CCDs;charge-coupled-device fiber optic taper a...
The proceedings contain 27 papers. The topics discussed include: greater-than-90% QE in visible spectrum perceptible from UV to near-IR Hamamatsu thinned back-illuminated CCDs;charge-coupled-device fiber optic taper array x-ray detector for protein crystallography;experimental measurement of the variation in sensitivity within a single pixel of a CCD;CCD transfer method: standard for absolute performance of CCDs and digital CCD camera systems;modeling camera orientation and 3D structure from a sequence of images taken by a perambulating commercial video camera;first study of a flat vacuum image sensor with a field-emitter array;and new 1000x1000 frame transfer CCD camera for high-speed high-fidelity digital imaging.
The development of the promising new field of sensorapplications, multisensorarrays for liquid analysis based on the principles of the electronic tongue, implies some new demands on sensor material research and deve...
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The development of the promising new field of sensorapplications, multisensorarrays for liquid analysis based on the principles of the electronic tongue, implies some new demands on sensor material research and development. Stable and reproducible sensors with partial specificity and considerable cross-sensitivities to different components in solutions are of primary interest. solid-state potentiometric sensors, both crystalline and vitreous, are likely to be thr most promising ones for multisensor devices designed for long-term analytical application in natural and artificial complex media. The present paper deals with development or a method of evaluation of integral heavy metal cation sensitivity of solid-statesensors with special consideration of cross-sensitivity features. The method involves a comparative study of different sensor materials in individual component solutions using several criteria based on integral response parameters. The procedure scheme call be applied to evaluate cross-sensitivity of ally kind of potentiometric sensors for liquid media. (C) 1997 Elsevier Science S.A.
The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific ...
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ISBN:
(纸本)0819424307
The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific market was insufficiently large to justify the required investment which, in turn, has lead to the use by many scientific customers of 'do-it-yourself design and foundry solutions to their imaging needs. This paper will introduce the basic features of the new generation image sensor and will describe the design of these devices.
We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the ph...
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ISBN:
(纸本)0819424307
We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the photodetector element which has superior linearity characteristic. It scans an A-size document in 25 seconds at 300 dots per inch. This color image sensor is compact and very low power, so it is most suitable to sheetfed color scanner.
The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color...
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ISBN:
(纸本)0819424307
The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color cross-talk can be improved by the suitable well structure.
An 800k-pixel Active Pixel device has been developed for use in a Digital Still Camera application. A mode of operation has been developed to cancel the problems of Fixed Patterned Noise (FPN) and dark current inheren...
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ISBN:
(纸本)0819424307
An 800k-pixel Active Pixel device has been developed for use in a Digital Still Camera application. A mode of operation has been developed to cancel the problems of Fixed Patterned Noise (FPN) and dark current inherent to this type of CMOS imaging array. A time multiplexed read-out mechanism allows the device to operate at 5 Mpix/s and still settle to within 0.1%. The device, with a full well of approximately 100K electrons, is capable of delivering a S/N of 66dB, and a sensitivity of approximately 50mV/lux at 50mS exposure. The sensor is covered with a color mosaic to allow an accurate recovery of a color image. This sensor makes new in-roads for CMOS imaging into areas traditionally occupied by CCD's.
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