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Conference on solid state sensor arrays - development and applications ii

作者： Fox, EC Nixon, O Agwani, MS Dykaar, DR Mantell, TJ Sabila, RW DALSA Inc Waterloo ON N2V 2E9 Canada

ISBN: (纸本)0819427411

Photodiode devices, in which the photosite consists of a reverse biased pn diode, have excellent quantum efficiencies at visible wavelengths and in the UV. However they display high levels of dark and bright image lag, and high levels of fixed pattern noise (FPN) when operated with electronic shuttering (exposure control). We have addressed these performance issues by replacing the photodiode photosites with pinned photodiode (PPD) photosites. In the PPD the n+ region of the conventional photodiode is replaced by a n region and a shallow highly doped p region - the surface potential in the photosite is pinned such that the photosite behaves as an ungated buried channel well. The high quantum efficiencies associated with photodiodes are maintained while allowing for large reductions in image lag and fixed pattern noise. We have developed PPD processes for two different photosite architectures. In the first architecture, charge is generated in the PPD and immediately spills to an adjacent gated integration well. In the second architecture, the charge is generated and stored in the PPD. Each of the architectures can be configured to allow for antiblooming/electronic shuttering. Both of the PPD processes and their associated architectures have been characterized, and order of magnitude reductions in image lag have been observed for PPD photosites relative to conventional photodiodes. No degradation in QE, PRNU, or well capacity has been observed. One of the PPD processes has been implemented in a family of high speed, quad output, linear sensors with 100 MHz data rates. Performance results are presented.

关键词： CCD charge coupled device PPD pinned photodiode high speed low noise

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Study of pixel structure and layout for CMOS Active Pixel Image sensor

Study of pixel structure and layout for CMOS Active Pixel Im...

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Conference on solid state sensor arrays - development and applications ii

作者： iida, Y Oba, E Mabuchi, K Nakamura, N Yamaguchi, T Ihara, H Nozaki, H Toshiba Ctr Res & Dev Adv Semicond Devices Res Labs Kawasaki Kanagawa Japan

ISBN: (纸本)0819427411

Shrinkage of pixel structures and layouts for CMOS Active Pixel Image sensors (APS's) are studied. Reduction of CMOS device design rule with the scaling-law can make the pixel size small, naturally. However, using minimum design rule, quarter micron rule or sub quarter micron rule, costs expensive. Therefore, pixel size shrinkage using relatively rough design rule have been studied for reduction of the chip cost. We have already reported about small pixel structure by replacement of row-select transistor by row-select capacitor, by omission of reset transistor with forward bias reset operation, and by omission of reset transistor with pinned-buried reset channel. We have also reported about small pixel by high packing density layout named "I-shaped cell" and its zigzag layout. However, these pixel shrinkage have some disadvantages. In this paper, we propose a novel pixel structure driven by pulse operation of drain line for row select and reset. Conventional row select structure, row select transistor or row select capacitor, is omitted by the row-select channel that contains low impurity concentration and has no gate structure. Moreover, conventional reset transistor is also replaced by reset channel structure in like manner. These structures and triple level pulse operation of drain realize quite simple pixel structure in which amplification transistor is the only gate structure. A large fill factor of 37% is obtained by this structure, in 5.6 mu m x 5.6 mu m pixel designed by 0.7 mu m rule.

关键词： CMOS Active Pixel Image sensor (APS) pixel layout photodiode fill factor simulation

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Light emitting diode arrays for consumer and medical applications

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MATERIALS SCIENCE AND ENGINEERING B-solid state MATERIALS FOR ADVANCED TECHNOLOGY 1998年第1-3期51卷 90-93页

作者： Rys, A Piotrowski, T Sobczynski, R Kansas State Univ Dept Elect & Comp Engn Manhattan KS 66506 USA Inst Electron Technol PL-02668 Warsaw Poland Hadaspectrum PL-04831 Warsaw Poland

development of light emitting diodes (LEDs) and arrays of diodes to be utilized in a modern and highly sensitive spectrophotometer is presented. The In1-xGaxAs1-yPy quaternary alloy semiconductor has been utilized in the design and fabrication of surface emitting infrared LEDs in the spectral range from 1100 to 1650 nm. Custom made chips provide the surface-emitting LEDs with high radiance and superior far-field patterns. The hybrid 31-element array of LEDs was fabricated. A temperature sensor and a photodiode was incorporated on the hybrid circuit to control the temperature and light intensity of the diodes. The instrument prototype has been fabricated and preliminary experimental data have been collected. (C) 1998 Elsevier Science S.A. All rights reserved.

关键词： infrared light emitting diodes electrical contacts spectrometer hybrid circuits

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Light emitting diode arrays for consumer and medical applications

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Materials science & engineering. B, solid-state materials for advanced technology 1998年第1-3期B51卷 90-93页

作者： Rys, Andrew Piotrowski, Tadeusz Sobczynski, Radoslaw Kansas State Univ Manhattan United States

关键词： Light emitting diodes

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solid state sensor arrays: development and applications

Solid State Sensor Arrays: Development and Applications

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solid state sensor arrays: development and applications 1997

The proceedings contain 27 papers. The topics discussed include: greater-than-90% QE in visible spectrum perceptible from UV to near-IR Hamamatsu thinned back-illuminated CCDs;charge-coupled-device fiber optic taper array x-ray detector for protein crystallography;experimental measurement of the variation in sensitivity within a single pixel of a CCD;CCD transfer method: standard for absolute performance of CCDs and digital CCD camera systems;modeling camera orientation and 3D structure from a sequence of images taken by a perambulating commercial video camera;first study of a flat vacuum image sensor with a field-emitter array;and new 1000x1000 frame transfer CCD camera for high-speed high-fidelity digital imaging.

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Cross-sensitivity evaluation of chemical sensors for electronic tongue: determination of heavy metal ions

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sensorS AND ACTUATORS B-CHEMICAL 1997年第1-3期44卷 532-537页

作者： Vlasov, Y Legin, A Rudnitskaya, A St Petersburg State Univ Dept Chem St Petersburg 199034 Russia

The development of the promising new field of sensor applications, multisensor arrays for liquid analysis based on the principles of the electronic tongue, implies some new demands on sensor material research and development. Stable and reproducible sensors with partial specificity and considerable cross-sensitivities to different components in solutions are of primary interest. solid-state potentiometric sensors, both crystalline and vitreous, are likely to be thr most promising ones for multisensor devices designed for long-term analytical application in natural and artificial complex media. The present paper deals with development or a method of evaluation of integral heavy metal cation sensitivity of solid-state sensors with special consideration of cross-sensitivity features. The method involves a comparative study of different sensor materials in individual component solutions using several criteria based on integral response parameters. The procedure scheme call be applied to evaluate cross-sensitivity of ally kind of potentiometric sensors for liquid media. (C) 1997 Elsevier Science S.A.

关键词： cross-sensitivity liquid media chemical sensors multisensor arrays

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A new generation of scientific CCD sensors

A new generation of scientific CCD sensors

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Conference on solid state sensor arrays - development and applications

作者： Heyes, PS Pool, PJ Holtom, R EEV Ltd Solid State Imaging 106 Waterhouse Lane Chelmsford Essex CM1 2QU United Kingdom

ISBN: (纸本)0819424307

The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific market was insufficiently large to justify the required investment which, in turn, has lead to the use by many scientific customers of 'do-it-yourself design and foundry solutions to their imaging needs. This paper will introduce the basic features of the new generation image sensor and will describe the design of these devices.

关键词： CCD sensor array back-thinning anti-blooming inverted mode operation (IMO) quantum efficiency (QE) astronomy

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Contact-type color image sensor using three LED switching method

Contact-type color image sensor using three LED switching me...

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Conference on solid state sensor arrays - development and applications

作者： Hamaguchi, T Yamashita, H Ohta, A Matsumoto, T Saito, M Mitsubishi Electric Corp. (Japan)

ISBN: (纸本)0819424307

We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the photodetector element which has superior linearity characteristic. It scans an A-size document in 25 seconds at 300 dots per inch. This color image sensor is compact and very low power, so it is most suitable to sheetfed color scanner.

关键词： image sensor light emitted diode photodiode LED switching method low power photodetector color scanner

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The color cross-talk simulation analysis for image sensor

The color cross-talk simulation analysis for image sensor

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Conference on solid state sensor arrays - development and applications

作者： Yamaguchi, T Yamashita, H Ihara, H iida, Y Ioue, I Nozaki, H ULSI Research Center Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan

The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color... 详细信息

ISBN: (纸本)0819424307

关键词： image sensor color cross-talk photosensitivity

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An 800k-pixel color CMOS sensor for consumer still cameras.

An 800k-pixel color CMOS sensor for consumer still cameras.

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Conference on solid state sensor arrays - development and applications

作者： Hurwitz, JED Denyer, PB Baxter, DJ Townsend, G VLSI Vision Ltd Aviation House 31 Pinkhill Edinburgh United Kingdom

ISBN: (纸本)0819424307

An 800k-pixel Active Pixel device has been developed for use in a Digital Still Camera application. A mode of operation has been developed to cancel the problems of Fixed Patterned Noise (FPN) and dark current inherent to this type of CMOS imaging array. A time multiplexed read-out mechanism allows the device to operate at 5 Mpix/s and still settle to within 0.1%. The device, with a full well of approximately 100K electrons, is capable of delivering a S/N of 66dB, and a sensitivity of approximately 50mV/lux at 50mS exposure. The sensor is covered with a color mosaic to allow an accurate recovery of a color image. This sensor makes new in-roads for CMOS imaging into areas traditionally occupied by CCD's.

关键词： CMOS sensors Active Pixels image sensors Digital Still Cameras

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