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Conference on solid state sensor arrays - development and applications ii

作者： Hoekstra, W van der Avoird, A Kole, M Schrooten, GG Schaeffer, CJ Philips Imaging Technol Eindhoven Netherlands

ISBN: (纸本)0819427411

In image sensors with passive pixels the column capacitance is large compared to the capacitance of the pixel. The charge-to-voltage conversion occurs in the column amplifier relatively far from the pixel. This may result in a high sensitivity to interference, especially in case other electronic circuitry is located on the same chip. Two types of CIF CMOS imagers are presented that use different read-out options to counter this effect. Both designs use differential read-out as DRAM's do. This means that the pixel is compared to a reference cell. The first type uses a reference cell on the same row;the second type utilizes a fully symmetrical way of read-out, similar to digital memories by having its reference on the same column. Furthermore, two other means of image quality improvement are applied. A boost circuit is used to generate a negative voltage for driving the selecting transistor to insure that it is completely switched on during pixel reset. By this, threshold differences between pixels do not affect the reset voltage. The second is a well thought-out column amplifier that calibrates its offset before reading the pixel information.

关键词： Image sensors

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developments in localisation sensor systems

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sensor REVIEW 2008年第2期28卷 98-101页

作者： Connolly, Christine Stalactite Technologies Ltd Wakefield UK

Purpose - The purpose of this paper is to report the development trends and emerging applications of non-GPS localisation sensors. Design/methodology/approach - The principles of gyroscopes and micro-electro-mechanical systems-based inertial sensors are introduced, followed by a review of products from various companies, and their applications. Findings - Highly integrated systems in robust solid-state materials are being packed into smaller housings, opening up new applications for inertial navigation sensors. The Kalman filter algorithm is widely used to remove noise from multi-sensor data and provide reliable attitude and heading measurements. applications range from stabilising cameras and detecting the motion of towed sonar arrays, to autonomous robot navigation, motion analysis in sports science, and navigating first-response rescue workers in disaster zones. Originality/value - Concentrates on non-GPS localisation technology, and shows that new developments are revolutionising position-finding and position-controlling applications.

关键词： intelligent sensors localization measurement

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A time delay and integration image sensor with high speed output architecture

A time delay and integration image sensor with high speed ou...

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Conference on solid state sensor arrays - development and applications ii

作者： Weale, GP Flood, CJ Dykaar, DR DALSA Inc Waterloo ON N2V 2E9 Canada

ISBN: (纸本)0819427411

Today's imaging systems utilize fast operation to increase their throughput. At high line rates the illumination required to collect a reasonable image becomes prohibitive. Time delay and integration (TDI) offers greatly enhanced responsivity to allow faster operation in terms of line rates. This combination of sensitivity and speed is unmatched in other sensor architectures. The standard multi-stage source follower output amplifier usually involves a trade off between speed and sensitivity through sizing of the first FET. We present a high bandwidth (>250 MHz) and sensitivity (>5 mu V/e), scaleable architecture for readout of TDI sensors. A key component of this architecture is the minimization of output amplifier load and parasitic capacitance. The methodologies used in the design and modeling of the output structure will be presented. This basic model has been confirmed over a range of device dimensions. A 4096 element, multi-tap TDI image sensor incorporating this architecture has been fabricated using a standard CCD process. Discrete and in-camera measurements will be presented demonstrating operation at >100 kHz line rates and with >300 V/(mu J/cm(2)) peak responsivity. Methods of controlling and reducing the stray loading on the sensor output will also be discussed.

关键词： CCD charge coupled device high speed output TDI

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A new generation of scientific CCD sensors

A new generation of scientific CCD sensors

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Conference on solid state sensor arrays - development and applications

作者： Heyes, PS Pool, PJ Holtom, R EEV Ltd Solid State Imaging 106 Waterhouse Lane Chelmsford Essex CM1 2QU United Kingdom

ISBN: (纸本)0819424307

The design of scientific image sensors has not progressed as rapidly as developments in the technology could have permitted. This has been a consequence of an incorrect perception by manufacturers that the scientific market was insufficiently large to justify the required investment which, in turn, has lead to the use by many scientific customers of 'do-it-yourself design and foundry solutions to their imaging needs. This paper will introduce the basic features of the new generation image sensor and will describe the design of these devices.

关键词： CCD sensor array back-thinning anti-blooming inverted mode operation (IMO) quantum efficiency (QE) astronomy

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sensor technologies for monitoring metabolic activity in single cells - Part ii: Nonoptical methods and applications

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IEEE sensorS JOURNAL 2004年第4期4卷 412-429页

作者： Yotter, RA Wilson, DM Univ Washington Dept Elect Engn Seattle WA 98195 USA

A review of solid-state chemical and electrochemical sensors to detect, metabolic activity at the extracellular, single-cell level is presented in the context of the development of lab-on-a-chip research instrumentation. Metabolic processes in cells are briefly reviewed with the goal of quantifying the role of metabolites within the cell. sensors reviewed include both research and commercial devices that can noninvasively detect extracellular metabolites, including oxygen, carbon dioxide, and glucose.. Metabolic activity can also be sensed nonselectively by measuring pH gradients. Performance metrics, such as sensitivity, sensor size, drift, time response, and sensing range, are included when available. Highly suitable sensor technologies for,monitoring cellular metabolic activity include electrochemical sensors, scanning electrochemical microscopy, ion-sensitive field effect transistor sensors, and solid-state light-addressable potentiometric sensors. Other less-suitable, but still potentially viable, solid-state sensing technologies are also reviewed briefly, including resonant chemical sensors (surface acoustic wave and quartz crystal microbalance), conductivity or impedance sensors, and sensors with multiple transduction stages. Specific biological applications which benefit from detection of extracellular metabolic events at the single-cell level are discussed to provide context to the practical use of these sensor technologies;these applications include case studies of various diseases (cancer, diabetes, mitochondrial disorders. etc.), cell and tissue differentiation;cell and tissue storage;cell life cycle and basic cellular processes;and developmental biology.

关键词： carbon dioxide sensors cell metabolic activity chemical sensors electrochemical sensors glucose sensors ion-selective membranes ion-sensitive field effect transistor (ISFET) light-addressable potentiometric sensors (LAPS) microelectrodes oxygen sensors pH sensors quartz crystal microbalance scanning electrochemical microscopy (SECM) single-cell detection surface acoustic wave

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solid state IMAGE SENSING: A NEW AND VERSATILE TOOL FOR SCIENCE AND INDUSTRY.

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1974年 716-721页

作者： Weckler, Gene P.

Recent developments pertaining to solid state image sensors are reviewed. Advances in signal processing are discussed and characteristics and performance of typical sensor arrays are presented. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control. The basic device consists of a silicon chip containing a row of photodiodes and a parallel shift register. Connected to each stage of the shift register is the gate of an MOS switch which couples the adjacent photodiode to a common video line. Both linear and area arrays have emerged from the development stage. New and novel applications ranging from scientific instruments to non-contact measurements for industrial process control are described and illustrated.

关键词： SEMICONDUCTOR DIODES, PHOTODIODE

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Design and characterization of CMOS APS imagers on two different technologies

Design and characterization of CMOS APS imagers on two diffe...

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Conference on solid state sensor arrays - development and applications ii

作者： Cavadore, C Solhusvik, J Magnan, P Gautrand, A Degerli, Y Lavernhe, F Farre, J Saint-Pe, O Davancens, R Tulet, M SUPAERO Dept Elect F-31055 Toulouse 4 France

ISBN: (纸本)0819427411

In this paper, we present experimental results from measurements on CMOS APS imager designed by CIMI-SUPAERO on two different technologies. In both cases, pixels with photoMos and photodiode structures have been designed. The first circuit has been developed using a standard CMOS DLP/DLM 1.2 mu m process from Austria Micro Systems. The detector array consists of 32x32 square pixels with 50 mu m pixel pitch;fill factor is 75 % for photodiode (PD) and 50 % for photoMos (PM). The circuit is also including row and column address decoders and the readout circuitry so as to perform on-chip correlated double-delta sampling to reduce column to column fixed pattern noise. Two other chips have been developed with a standard CMOS SLP/DLM process from MIETEC with 0.7 mu m design rules, which includes a 128x128 pixels array, with 21 mu m pixel pitch and analogue readout circuitry. Among 10 different arrays, no faulty one was observed for both circuits. In this paper, we compare both performances of 32x32 pixels and 128x128 pixels in terms of dark current, quantum efficiency, conversion gain, dynamic range, linearity and spatial uniformity.

关键词： Active Pixel sensor APS CMOS image sensors characterisation

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Contact-type color image sensor using three LED switching method

Contact-type color image sensor using three LED switching me...

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Conference on solid state sensor arrays - development and applications

作者： Hamaguchi, T Yamashita, H Ohta, A Matsumoto, T Saito, M Mitsubishi Electric Corp. (Japan)

ISBN: (纸本)0819424307

We have developed a new contact-type color image sensor for personal use. Three color light emitted diodes(LEDs) are used, for illuminating source of document. The photodiode MOS image sensor chips are used for the photodetector element which has superior linearity characteristic. It scans an A-size document in 25 seconds at 300 dots per inch. This color image sensor is compact and very low power, so it is most suitable to sheetfed color scanner.

关键词： image sensor light emitted diode photodiode LED switching method low power photodetector color scanner

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The color cross-talk simulation analysis for image sensor

The color cross-talk simulation analysis for image sensor

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Conference on solid state sensor arrays - development and applications

作者： Yamaguchi, T Yamashita, H Ihara, H iida, Y Ioue, I Nozaki, H ULSI Research Center Toshiba Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan

The color cross-talk simulation analysis was carried out. The color cross-talk was depended on the p-well potential profile. The color cross-talk has a minimum value around 2.3 mu m junction depth of p-well. The color... 详细信息

ISBN: (纸本)0819424307

关键词： image sensor color cross-talk photosensitivity

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solid state single photon sensors for the RICH application

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 2020年 970卷 163804-163804页

作者： Korpar, S. Krizan, P. Univ Maribor Fac Chem & Chem Engn Maribor Slovenia J Stefan Inst Ljubljana Slovenia Univ Ljubljana Fac Math & Phys Ljubljana Slovenia

Silicon photomultipliers, arrays of avalanche photodiodes operated in the Geiger mode, are exciting novel light sensors for RICH detectors. In the present review, we discuss the motivation for employing solid-state single-photon sensors, describe their principles of operation and challenges of their use. We review the current state of development and the progress made with semiconductor sensors. We also discuss applications in ongoing and planned future experiments.

关键词： Cherenkov detectors RICH solid state light sensor Silicon photomultipliers

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