Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidat...
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Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 *** DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 *** the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.
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