In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition *** from the high crystallinity and large specific surface area of InP nanowires,the simply con...
详细信息
In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition *** from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W （-1） and an external quantum efficiency of2.8 × 10 5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 *** effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the *** convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.
暂无评论