We report resonant cavity enhanced (RCE) InGaAs/Si photodetectors fabricated by sol-gel wafer bonding technology. The bonding temperature was 300 degrees C. A 60-mu m-diameter photodetector demonstrated dark current d...
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We report resonant cavity enhanced (RCE) InGaAs/Si photodetectors fabricated by sol-gel wafer bonding technology. The bonding temperature was 300 degrees C. A 60-mu m-diameter photodetector demonstrated dark current density of 0.59 pA/mu m(2) at 0-V bias and 24.7 pA/mu m(2) at 2-V reverse bias, peak responsivity of 0.7 A/W, and full-width at half-maximum (FWHM) of 6 nm around 1.55 mu m. The 3-dB bandwidth of a 20-mu m-diameter photodetector was 17.05 GHz under 1-V reverse bias voltage. Red shift of the resonant wavelength caused by thermo-optic effect was observed. The thermal tuning range achieved 15 nm.
Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/...
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Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects. (C) 2011 Optical Society of America
Intermediate band (IB) solar cell is a promising third-generation solar cell to achieve very high efficiency above Shockley-Queisser limit. One of the promising ways to IB material is to introduce heavily doped deep l...
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We report Si-based InGaAs RCE photodetectors. The detector without top mirror exhibits saturation output current higher than 19.8mA, and the responsivity is 0.33A/W. The full width at half maximum of the RCE photodete...
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ISBN:
(纸本)9781424463442
We report Si-based InGaAs RCE photodetectors. The detector without top mirror exhibits saturation output current higher than 19.8mA, and the responsivity is 0.33A/W. The full width at half maximum of the RCE photodetector is 4.8nm.
We report Si-based InGaAs RCE photodetectors. The detector without top mirror exhibits saturation output current higher than 19.8mA, and the responsivity is 0.33A/W. The full width at half maximum of the RCE photodete...
详细信息
We report Si-based InGaAs RCE photodetectors. The detector without top mirror exhibits saturation output current higher than 19.8mA, and the responsivity is 0.33A/W. The full width at half maximum of the RCE photodetector is 4.8nm.
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