Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si (100) substrate by solid phase epitaxy recrystallization. The formation process and some tests about the crystal quality were presente...
详细信息
Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si (100) substrate by solid phase epitaxy recrystallization. The formation process and some tests about the crystal quality were presented in this paper. With the help of the SiO2 cap layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion beam current was small and implantation time was long enough, the dynamic annealing effect was depressed and the emergency of β-SiC was avoided. The pre-amorphization of the Si substrate increased the fraction of the substitutional carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality were recrystallized on Si substrate.
Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO2 capping lay...
详细信息
Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of β-SiC was avoided and the dynamic annealing effect was depressed. The preamorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.
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