With the rapid development of distributed energy, the power grid, especially the urban power grid, is facing many challenges. In this paper, the concept of DC distribution station is proposed. As a key component of DC...
详细信息
ISBN:
(纸本)9789881563903
With the rapid development of distributed energy, the power grid, especially the urban power grid, is facing many challenges. In this paper, the concept of DC distribution station is proposed. As a key component of DC distribution system, DC distribution station will play the advantages of DC distribution technology to promote the transformation of traditional urban power grid into a new urban power grid. A reasonable overall topology is proposed, and the appropriate voltage control strategy is selected. Besides, the simulation model of DC distribution station is built in MATLAB/SIMULINK. The simulation under steady-state condition verifies the feasibility of the DC distribution station and the correctness of the control strategy.
The past three years have witnessed the power conversion efficiency (PCE) of organic solar cells (OSCs) rocketing to over 18%, due to outstanding advantages of non-fullerene acceptors (NFAs). However, large exciton bi...
详细信息
The past three years have witnessed the power conversion efficiency (PCE) of organic solar cells (OSCs) rocketing to over 18%, due to outstanding advantages of non-fullerene acceptors (NFAs). However, large exciton binding energy (E (b)) caused by strong Coulombic force is still one of the main limiting factors for high-performance OSCs. Thus, it is critical to reduce the E (b) for further enhancement of device performance. Many strategies have been developed to reduce the E (b) of organic materials previously. In this perspective, the calculation methods for E (b) and the relationship between E (b) and voltage loss (V (loss)) are discussed. Then, the effects of the properties of small-molecule acceptors on E (b) from the perspectives of fused-ring donor cores, end groups, side chains, and molecular packing are discussed. Finally, the potential directions for reducing E (b) and pointing out the trade-off between E (b) and bandgaps/miscibility are put forward. It is hoped that this perspective could provide a new thinking of a molecular design for the breakthrough of OSCs.
Interface properties and bias temperature instability (BTI) determine the performance and stability of SiC metaloxide semiconductor (MOS) devices. In this work, we propose an electron cyclotron resonance microwave nit...
详细信息
Interface properties and bias temperature instability (BTI) determine the performance and stability of SiC metaloxide semiconductor (MOS) devices. In this work, we propose an electron cyclotron resonance microwave nitrogen-oxygen (N-O) mixed plasma post-oxidation annealing (POA) process to improve the interface properties and BTI of 4H-SiC MOS capacitors. Results showed that the N-O mixed plasma POA reduces the density of interface traps, maintains the stability of the flat band voltage (V-fb) hysteresis under four successive cycles of positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) at 423 K, and significantly reduces the V(fb )hysteresis under alternating PBTS and NBTS at 100 K. The oxide traps remarkably decreased to 2.27 x 10(12) cm(-2) after N-O mixed plasma POA. The related passivation and improvement mechanisms were further studied by secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations. The synergistic effects of highly reactive N and O plasma promoted the considerable absorption of N at the interface and prevented further oxidation of the SiC substrate. We also elaborate on the effects of N, O, and N-O plasma on the elimination and passivation of O vacancy defects, C-related defects (SiOxCy and C dimer), and Si interstitial defects and discuss implications of the simultaneous suppression of electron and hole trapping.
The nitrogen annealing can effectively improve the performance of the HfOx-based resistive random access memory (RRAM) devices. However, few more profound research explore the carriers transport behavior and path on n...
详细信息
The growth of solder joint interface layer is closely related to the reliability of solder joints. In this work, the growth behavior of the interfacial intermetallic compounds layer between Sn-3Ag-3Sb-xIn/Cu (x=0, 1, ...
详细信息
Dongba pictographs are the only pictographs still in use in the world. They have pictorial ideographic features, and their symbols carry rich cultural and contextual information. Due to the lack of relevant datasets, ...
详细信息
暂无评论