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Effect of temperature on GaN films deposited on graphite substrates at low-temperature

APPLIED SURFACE SCIENCE 2013年 280卷 909-913页

作者： Duan, Zhongwei Qin, fuwen Lin, Guoqiang Bian, Jiming zhang, Dong Wang, Enping Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Peoples R China Dalian Univ Technol Minist Educ Key Lab Mat Modificat Laser Ion & Electron Beams Dalian 116024 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China

Highly-quality GaN films were deposited on graphite substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at low temperature. The influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), scanning electron microscope (SEM), and room temperature photoluminescence (PL), respectively. Results indicated that the dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on graphite substrates under optimized deposition temperature of 450 degrees C. In addition, the relatively good ohmic contact between GaN and graphite was demonstrated by current-voltage (I-V) characteristics measurement. (C) 2013 Elsevier B.V. All rights reserved.

关键词： GaN films Low-temperature Graphite substrates ECR-PEMOCVD

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Carrier transport mechanisms of n-ZnO/ZnMgO/p-GaN heterojunctions revealed by temperature-dependent current-voltage characteristics

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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2013年第6期16卷 1684-1687页

作者： Bian, Jiming Kou, Xiaoqiang zhang, Zhikun zhang, Yuzhi Sun, Jingchang Qin, fuwen Liu, Weifeng Luo, Yingmin Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China Liaoning Normal Univ Sch Phys & Elect Technol Dalian 116029 Peoples R China

The heterojunction diodes with n-ZnO/ZnMgO/p-GaN structure have been deposited on the commercially available p-GaN/sapphire substrates by a simple process of ultrasonic spray pyrolysis. To demonstrate the effect of ZnMgO layer as electron blocking layer, the carrier transport mechanisms of both n-ZnO/p-GaN and n-ZnO/ZnMgO/p-GaN heterojunctions were systemically investigated by temperature-dependent current voltage measurements. The results revealed that the multistep tunneling is the dominant carrier transport mechanism in n-ZnO/ZnMgO/p-GaN heterojunctions under forward current, accurately controlled ZnMgO layer thickness can effectively block electron injection from ZnO to GaN and promote hole injection from GaN to ZnO. Therefore, the design and application of ZnO based heterostructure devices will benefit significantly from these achievements. (C) 2013 Elsevier Ltd. All rights reserved.

关键词： Zinc oxide Gallium nitride Zinc magnesium oxide Heterostructure Ultrasonic spray pyrolysis Tunneling

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Distributed Event-Triggered H_∞ Filtering over Sensor Networks with Coupling Delays

Distributed Event-Triggered <i>H</i><sub>∞</sub> Filtering ...

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39th Annual Conference of the IEEE Industrial-Electronics-Society (IECON)

作者： Ge, Xiaohua Han, Qing-Long Yang, fuwen zhang, Xian-Ming Cent Queensland Univ Ctr Intelligent & Networked Syst Rockhampton Qld 4702 Australia

ISBN: (纸本)9781479902248

This paper is concerned with the problem of designing distributed event-triggered H-infinity filters over sensor networks subject to heterogeneous coupling intercommunication delays. A new distributed event-triggered scheme is proposed to determine whether or not each sensor's current sampled data should be broadcasted and transmitted to its underlying neighboring nodes through the communication network. In this scheme, each sensor node is able to make its own decisions to broadcast and transmit only when its local measurement output error exceeds a designed threshold. Heterogeneous coupling delays are incorporated in the intercommunication between the specific sensor node and its interacting neighbors. A refined technique is proposed to realize the complicated decoupling among the exchanged measurement outputs in the presence of coupling intercommunication delays. Then the resulting filter error system is modeled by a new delay system subject to finite time-varying "state" delays. Based on the Lyapunov-Krasovskii functional method, a sufficient condition for distributed event-triggered H-infinity filter design is established, from which the desired filter parameters and the triggering parameter in the event condition can be co-designed. The filter design problem is posed in terms of linear matrix inequalities. A quarter-car suspension model is finally presented to show the effectiveness and feasibility of the developed theoretical results.

关键词： Sensor nodes

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Deposition and characteristics of GaN films on Ni metal substrate by ECR-PEMOCVD

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JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 2013年第12期24卷 5069-5074页

作者： Qin, fuwen Zhong, Miaomiao Wang, Chong Liu, Yuemei Bian, Jiming Wang, Enping Wang, Hui zhang, Dong Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Peoples R China Dalian Univ Technol Key Lab Mat Modificat Laser Ion & Electron Beams Minist Educ Dalian 116024 Peoples R China Dalian Univ Technol Dept Elect Engn Dalian 116024 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China

Gallium nitride (GaN) films were deposited on Ni metal substrate using electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system. With this approach, highly c-oriented GaN films with smooth surface were obtained at an extremely low temperature of similar to 480 A degrees C. The trimethyl gallium (TMGa) flux dependent structural, morphological, and optical characteristics of GaN films were investigated by X-ray diffraction analysis, reflection high energy electron diffraction, atomic force microscopy and photoluminescence analysis. The results indicate that it is feasible to deposit GaN films on Ni metal substrate under the proper deposition procedures. The high quality GaN films with high c-axis orientation and strong ultraviolet emission peak are successfully achieved under the optimized TMGa flux of 1.2 sccm. The GaN/Ni structure has great potential for the development of high power devices with excellent heat dissipation.

关键词： Gallium nitride

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系统性红斑狼疮合并膝关节坏死的临床观察

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中华风湿病学杂志 2014年第3期18卷 182-183页

作者：张晨边福文史晓燕常莹韩大跃中国人民解放军第210医院肿瘤科大连116021

目的探讨SLE并发膝关节坏死（ONK）患者的临床特点。方法回顾性总结分析本院SLE合并ONK患者的临床资料。结果本院2008--2013年收治SLE患者81例，其中11例合并ONK，所有合并ONK的患者均为女性，发病年龄19～57岁，平均（36±13）岁... 详细信息

目的探讨SLE并发膝关节坏死（ONK）患者的临床特点。方法回顾性总结分析本院SLE合并ONK患者的临床资料。结果本院2008--2013年收治SLE患者81例，其中11例合并ONK，所有合并ONK的患者均为女性，发病年龄19～57岁，平均（36±13）岁；病程4．5～31年，平均（13±6）年；局部临床表现中膝关节肿胀伴疼痛5例，仅有疼痛无肿胀的I例，无症状者5例，所有患者均伴有股骨头无菌坏死。实验室检查中甘油三酯升高者7例，同时伴有胆崮醇升高者3例；口服糖皮质激素总的累计量为（66824±27328）mg。结论SLE合并ONK并非罕见，且多数患者有肾脏受累和血脂升高，以及长期的糖皮质激素治疗。

关键词：红斑狼疮系统性骨坏死膝

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卷烟车间空调回风过滤用毛绒滤料的过滤性能

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烟草科技 2014年第10期47卷 9-14页

作者：杨磊范晓伟张勍赵航宋高举苗芊程爱霞董富文中原工学院郑州市中原中路41号450007 中国烟草标准化研究中心机械工业第六设计研究院郑州市中原中路191号450007 西安工程大学西安市金花南路19号710048

为研究新型毛绒滤料应用于卷烟车间空调系统过滤段时,对空调回风的净化效果,分析了不同型号毛绒滤料对空调回风粉尘的过滤特性及其影响因素。结果表明:1长毛绒滤料过滤效率受过滤风速的影响较为显著,过滤效率分布的标准差高达21.4%;过... 详细信息

为研究新型毛绒滤料应用于卷烟车间空调系统过滤段时,对空调回风的净化效果,分析了不同型号毛绒滤料对空调回风粉尘的过滤特性及其影响因素。结果表明:1长毛绒滤料过滤效率受过滤风速的影响较为显著,过滤效率分布的标准差高达21.4%;过滤风速变化时,短毛绒滤料的过滤效率较稳定,过滤效率分布的标准差最高为5.2%。2粉尘浓度对两种毛绒滤料的运行阻力的影响均不明显。3短毛绒滤料平均容尘量359.2 g/m2,小于长毛绒滤料平均容尘量707.1 g/m2。尽管短毛绒滤料容尘量较小,但其过滤阻力、过滤风速变化时过滤效率的稳定性、粉尘浓度变化时过滤阻力的稳定性等性能指标均优于长毛绒滤料。

关键词：卷烟空调系统粉尘毛绒滤料过滤性能

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Study on air flow distribution of ventilating system in the low pressure chamber for controlling the tobacco smoke

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Information Technology Journal 2013年第16期12卷 3633-3638页

作者： Qing, zhang Lei, Yang Hang, Zhao Qian, Miao Yang, Rongchao Ming, Ma Dong, fuwen China Tobacco Standardization Research Centre Zhengzhou 450000 China Zhongyuan University of Technology Zhengzhou 450007 China

Most modern tobacco industries have chambers to evaluate the quality of tobacco samples. In the academe, this chamber should also produce a low pressure likely to the atmospheric pressure in high altitude area. A ventilation system should be used in the chamber to controlling the tobacco smoke. This study aims at the air flow distribution of a ventilation system of the chamber with the low pressure and assessing its controlling effect on tobacco smoke. Computational Fluid Dynamic method is applied for the simulation of air flow field and smoke moving path in a condition of low pressure in the chamber. Furthermore, a distance-data acquisition system is set up in the camber to monitor the air velocities of six particular positions close to inlets or outlets. The numerical simulating results in this study can show us the effect of the air flow distribution and air flow velocity in the chamber, which can be proved validity by the results from the distance-data acquisition system. In this case, the locations of the inlets and outlets of ventilation system may be the key factor in the design of the ventilation system. It can be also concluded that the better air flow distribution may decrease the turbulent circuit and reduce the dust deposit in the corners of the chamber. © 2013 Asian Network for Scientific Information.

关键词： Smoke

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Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD

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VACUUM 2013年 92卷 77-80页

作者： Zhao, Yue Qin, fuwen Bai, Yizhen Ju, Zhenhe Zhao, Yan zhang, Xiaohui Li, Shuangmei zhang, Dong Bian, Jiming Li, Yang Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Peoples R China Dalian Univ Technol Key Lab Mat Modificat Laser Ion & Electron Beams Minist Educ Dalian 116024 Peoples R China Shenyang Inst Engn New Energy Source Res Ctr Shenyang 110136 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China Shenyang Inst Engn Dept Phys Shenyang 110136 Peoples R China Shenyang Inst Engn Dept Automat Control Engn Shenyang 110136 Peoples R China

GaN films were deposited on indium tin oxide (ITO) coated glass substrates at various deposition temperatures using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N-2 are applied as precursors of Ga and N, respectively. The crystalline quality and photoluminescence properties of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and room temperature photoluminescence (PL). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on ITO glass substrates under optimized deposition temperature of 430 degrees C, and the room temperature PL spectra of the optimized GaN film show an intense near-band-edge luminescence located at 360 nm. The obtained GaN/ITO/glass structure was especially attractive for transparent optoelectronics applications with inexpensive ITO/glass substrate. (C) 2012 Elsevier Ltd. All rights reserved.

关键词： GaN films ITO substrates ECR-PEMOCVD Low-temperature synthesis

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Effect of P on the anti-oxidation of SnPb solder and the mechanism research

Effect of P on the anti-oxidation of SnPb solder and the mec...

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11th International Conference in Asia of the International-Union-of-Materials-Research-Societies

作者： Ouyang Yao HuQiang zhang fuwen Wang Zhigang Gen Res Inst Nonferrous Met Beijing 100088 Peoples R China Beijing COMPO Adv Techenol Co Ltd Beijing 100088 Peoples R China

ISBN: (纸本)9783037851692

The effects of phosphorous on the anti-oxidation of SnPb solder and the mechanism were investigated. The surface oxidation behavior of Sn63Pb37 solder in the liquid state was observed by comparing the color of the molten solder and the effects of the temperature on the oxidation resistance of solder Sn63Pb37-P is conduced by skimming and weighting the oxidation dross. OM, SEM and EDS were used to analyze the anti-oxidation performance and mechanism. The results show that Sn63Pb37 solder with 0.019wt.% P can maintain smooth and brightly longer under 260 degrees C, and produce less oxide slag. It is found that phosphorous is needle-like and concentrate on the surface of the solder and oxide film. At 260 degrees C, the additional element P suppresses impurity element Fe forming oxide. The additional element P will engage in the forming of oxide film, and improve the structure and mechanical property of oxide film to achieve the antioxidant effect. If heated to 380 degrees C, the oxidation resistance of molten Sn63Pb37-P alloy was greatly worsen, instead.

关键词： Sn63Pb37 solder P oxidation anti-oxidation mechanism

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Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

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Chinese Science Bulletin 2013年第30期58卷 3617-3623页

作者： WANG EnPing BIAN JiMing QIN fuwen zhang Dong LIU YueMei ZHAO Yue DUAN ZhongWei WANG Shuai School of Physics and Optoelectronic Technology Dalian University of Technology Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education)Dalian University of Technology Key Laboratory of Inorganic Coating Materials Chinese Academy of Sciences

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium *** influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman *** GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 *** ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)*** GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.

关键词： GaN薄膜玻璃基板薄膜沉积钛涂层流量 ECR-PEMOCVD 低温化学气相沉积系统

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