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Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Chinese Science Bulletin 2013年第30期58卷 3617-3623页

作者： WANG EnPing BIAN JiMing QIN fuwen zhang Dong LIU YueMei ZHAO Yue DUAN ZhongWei WANG Shuai School of Physics and Optoelectronic Technology Dalian University of Technology Key Laboratory of Materials Modification by Laser Ion and Electron Beams (Ministry of Education)Dalian University of Technology Key Laboratory of Inorganic Coating Materials Chinese Academy of Sciences

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium *** influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman *** GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 *** ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)*** GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.

关键词： GaN薄膜玻璃基板薄膜沉积钛涂层流量 ECR-PEMOCVD 低温化学气相沉积系统

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Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

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JOURNAL OF CRYSTAL GROWTH 2013年 368卷 92-96页

作者： Liu, Yuemei Qin, fuwen zhang, Dong Bian, Jiming Zhao, Yue Wang, Enping Wang, Shuai Zhong, Miaomiao Ju, Zhenhe Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Liaoning Peoples R China Dalian Univ Technol Minist Educ Key Lab Mat Modificat Laser Ion & Electron Beams Dalian 116024 Peoples R China Shenyang Inst Engn New Energy Source Res Ctr Shenyang 110136 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China

Highly c-axis oriented GaN films were deposited on Cu coated glass substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). In-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to systematically analyze the influence of TMGa flux on the crystalline quality of the GaN films. GaN films with strong c-axis preferred orientation were achieved under the optimal TMGa flux of 1.4 sccm. Moreover, a strong near band edge (NBE) emission peak located at 354 nm was observed in the room temperature PL spectrum for the optimized GaN sample. The GaN/Cu/glass structure shows great potential for application in large area low cost GaN-based LED devices. (C) 2013 Elsevier B.V. All rights reserved.

关键词： Cu substrates Low temperature ECR-PEMOCVD GaN films

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Low-temperature grown InN films based on sapphire substrate with ECR-plasma enhanced MOCVD

Low-temperature grown InN films based on sapphire substrate ...

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8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8

作者： Ju, Zhenhe Li, Shi Zheng, Hong zhang, Dong Zhao, Yan Li, Yucai Miao, Lihua Wang, Gang zhang, Xiaohui Li, Shuangmei Qin, fuwen New Energy Source Research Center Shenyang Institute of Engineering Shenyang 110136 China Liaoning Solar Energy RandD Co. Ltd. 110136 China Department of Physics Shenyang Institute of Engineering Shenyang 110136 China Mathematical Department Shenyang Medical College Shenyang 110136 China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024 China

ISBN: (纸本)9781632660008

Prefer-oriented and fine grained polycrystalline InN films are deposited on sapphire substrate using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low-temperature. Trimethyl indium (TMIn) and N2 are applied as precursors for In and N, respectively. The influence of deposition temperature on the structural, electrical and morphological properties of InN films is systematically investigated by x-ray diffraction analysis (XRD), Hall Effect measurement (HL5500) and atomic force microscopy (AFM). The results show that the as-grown InN films with smooth surface roughness of 4.59nm and preferred orientation are successfully achieved at the optimized deposition temperature of 450°C, which was low temperature here. The InN films reported here will provide various opportunities for the development of high efficiency and high performance semiconductor devices based on InN materials.

关键词： Metallorganic chemical vapor deposition

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海藻酸钠寡糖生物活性的研究进展

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中国酿造 2014年第1期33卷 5-8页

作者：张玉娟罗福文姚子昂李倩吴海歌大连大学生命科学与技术学院辽宁大连116622 大连医科大学附属第二医院普外科辽宁大连116027

海藻酸钠是细菌细胞壁及海带等褐藻类植物细胞壁的主要组成成分,因其具有很好的生物相容性、成膜性等特点,在食品医药等方面被广泛应用。其降解产物为海藻酸钠寡糖,与海藻酸钠相比具有分子量低、水溶性强、易吸收等优点,表现出多种生物... 详细信息

海藻酸钠是细菌细胞壁及海带等褐藻类植物细胞壁的主要组成成分,因其具有很好的生物相容性、成膜性等特点,在食品医药等方面被广泛应用。其降解产物为海藻酸钠寡糖,与海藻酸钠相比具有分子量低、水溶性强、易吸收等优点,表现出多种生物活性而引起关注。综述了海藻酸钠寡糖的生物活性和应用领域研究进展,并对其发展前景进行了展望。

关键词：海藻酸钠海藻酸钠寡糖生物活性研究进展

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Structural and electrical properties of high c-orientation gan films on diamond substrates with ECR-PEMOCVD

Structural and electrical properties of high c-orientation g...

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8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8

作者： Ju, Zhenhe Li, Shi Zheng, Hong zhang, Dong Zhao, Yan Li, Yucai Miao, Lihua Wang, Gang zhang, Xiaohui Li, Shuangmei Qin, fuwen New Energy Source Research Center Shenyang Institute of Engineering Shenyang 110136 China Liaoning Solar Energy R and D Co. Ltd. Shenyang 110136 China Department of Physics Shenyang Institute of Engineering Shenyang 110136 China Mathematical Department Shenyang Medical College Shenyang 110136 China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024 China

ISBN: (纸本)9781632660008

Preferred orientation GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors and different N2 flux is used to achieve high quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD), atomic force microscopy (AFM), electron probe microanalysis (EPMA) and Hall Effect Measurement (HL). The results show that the high quality GaN films deposited at the proper N2 flux display a fine structural and electrical property and the Ga/N atomic ratio plays an important role in the electrical property of GaN films.

关键词： Cyclotrons

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Whole-genome sequencing of giant pandas provides insights into demographic history and local adaptation

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NATURE GENETICS 2013年第1期45卷 67-U99页

作者： Zhao, Shancen Zheng, Pingping Dong, Shanshan Zhan, Xiangjiang Wu, Qi Guo, Xiaosen Hu, Yibo He, Weiming zhang, Shanning Fan, Wei Zhu, Lifeng Li, Dong zhang, Xuemei Chen, Quan zhang, Hemin zhang, Zhihe Jin, Xuelin zhang, Jinguo Yang, Huanming Wang, Jian Wang, Jun Wei, fuwen Chinese Acad Sci Inst Zool Key Lab Anim Ecol & Conservat Biol Beijing Peoples R China BGI Shenzhen Shenzhen Key Lab Trans Biotechnol Shenzhen Peoples R China Univ Chinese Acad Sci Coll Life Sci Beijing Peoples R China China Wildlife Conservat Soc Beijing Peoples R China China Conservat & Res Ctr Giant Panda Wolong Peoples R China Chengdu Res Base Giant Panda Breeding Chengdu Peoples R China Shaanxi Wild Anim Rescue & Res Ctr Xian Peoples R China Beijing Zoo Beijing Peoples R China Univ Copenhagen Dept Biol Copenhagen Denmark

The panda lineage dates back to the late Miocene(1) and ultimately leads to only one extant species, the giant panda (Ailuropoda melanoleuca). Although global climate change and anthropogenic disturbances are recognized to shape animal population demography(2,3) their contribution to panda population dynamics remains largely unknown. We sequenced the whole genomes of 34 pandas at an average 4.7-fold coverage and used this data set together with the previously deep-sequenced panda genome(4) to reconstruct a continuous demographic history of pandas from their origin to the present. We identify two population expansions, two bottlenecks and two divergences. Evidence indicated that, whereas global changes in climate were the primary drivers of population fluctuation for millions of years, human activities likely underlie recent population divergence and serious decline. We identified three distinct panda populations that show genetic adaptation to their environments. However, in all three populations, anthropogenic activities have negatively affected pandas for 3,000 years.

关键词： Lobomycosis whole genome sequencing Ailuropoda melanoleuca Ailuropoda functional/structural genomics Demographic history detail

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Synthesis of SiO₂/β-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

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APPLIED PHYSICS LETTERS 2013年第21期103卷 212105-212105页

作者： zhang, Zhikun Bian, Jiming Bi, Kaifeng Liu, Yanhong zhang, Dong Qin, fuwen Liu, Hongzhu Miao, Lihua Dalian Univ Technol Sch Phys & Optoelect Technol Dalian 116024 Peoples R China Chinese Acad Sci Key Lab Inorgan Coating Mat Shanghai 200050 Peoples R China Shenyang Inst Engn New Energy Source Res Ctr Shenyang 110136 Peoples R China Shenyang Med Coll Dept Comp & Math Basic Teaching Shenyang 110034 Peoples R China

beta-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH4 diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown beta-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO2/beta-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. (C) 2013 AIP Publishing LLC.

关键词： Graphite X-ray diffraction Wide bandgap semiconductors Composite materials Silicon

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基于ZigBee技术的葡萄园无线监测节点的研究与设计

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计算机与数字工程 2014年第3期42卷 535-538,542页

作者：王辅文张升超李建奇李晓峰李振宇湖南文理学院电气与信息工程学院常德415000

针对解决葡萄园环境参数的无线监测问题,论文提出了一套无线实时监测葡萄园生态环境的方案,设计了一种能够实时采集、传输葡萄园环境参数采集系统。该系统基于无线传感器网络技术,采用CC2530芯片为基础设计,传感器节点上接有空气温湿度... 详细信息

针对解决葡萄园环境参数的无线监测问题,论文提出了一套无线实时监测葡萄园生态环境的方案,设计了一种能够实时采集、传输葡萄园环境参数采集系统。该系统基于无线传感器网络技术,采用CC2530芯片为基础设计,传感器节点上接有空气温湿度传感器、土壤温湿度传感器以及二氧化碳浓度传感器,通过这些传感器采集葡萄园环境参数。传感器节点将采集的环境参数经无线方式传给采集节点,采集节点通过串口将数据传输到PC机的数据库中,实现了葡萄园环境参数的无线实时监测。测试证明,该系统具有功耗低、传输实时数据、可靠性高等优点,能够地满足葡萄园环境参数监测的应用要求。

关键词：葡萄园 ZigBee 无线监测数据传输

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Distributed Event-Triggered H_∞ Filtering over Sensor Networks with Coupling Delays

Distributed Event-Triggered H_∞ Filtering over Sensor Netwo...

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Annual Conference of the IEEE Industrial Electronics Society

作者： Xiaohua Ge Qing-Long Han fuwen Yang Xian-Ming zhang Centre for Intelligent and Networked Systems Central Queensland University

ISBN: (纸本)9781479902255

This paper is concerned with the problem of designing distributed event-triggered H_∞ filters over sensor networks subject to heterogeneous coupling intercommunication delays. A new distributed event-triggered scheme is proposed to determine whether or not each sensor's current sampled data should be broadcasted and transmitted to its underlying neighboring nodes through the communication network. In this scheme, each sensor node is able to make its own decisions to broadcast and transmit only when its local measurement output error exceeds a designed threshold. Heterogeneous coupling delays are incorporated in the intercommunication between the specific sensor node and its interacting neighbors. A refined technique is proposed to realize the complicated decoupling among the exchanged measurement outputs in the presence of coupling intercommunication delays. Then the resulting filter error system is modeled by a new delay system subject to finite time-varying "state" delays. Based on the Lyapunov-Krasovskii functional method, a sufficient condition for distributed event-triggered H_∞ filter design is established, from which the desired filter parameters and the triggering parameter in the event condition can be co-designed. The filter design problem is posed in terms of linear matrix inequalities. A quarter-car suspension model is finally presented to show the effectiveness and feasibility of the developed theoretical results.

关键词： Event trigger design problems networks(communications) filter design error system delay filter parameters Sensor networks Distribute

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Effect of growth temperature on GaN films deposited on stainless steel substrates by ECR-PEMOCVD

Effect of growth temperature on GaN films deposited on stain...

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8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8

作者： Qin, fuwen Duan, Zhongwei Li, Qinming zhang, Dong Ju, Zhenhe Zhong, Miaomiao Wang, Hui Liu, Yuemei Wang, Enping Wang, Shuai Bian, Jiming School of Physics and Optoelectronic Technology Dalian University of Technology Dalian Liaoning 116024 China Ministry of Education Dalian Liaoning 116024 China New Energy Source Research Center Shenyang Institute of Engineering Shenyang Liaoning 110136 China

ISBN: (纸本)9781632660008

Gallium nitride (GaN) films were deposited on stainless steel substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD), with trimethyl gallium (TMGa) and N2 applied as the precursors of Ga and N, respectively. The effect of growth temperature on the characteristics of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), room temperature photoluminescence (PL), and scanning electron microscope (SEM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on stainless substrates under optimized deposition temperature of 400°C. In addition, the approximate Ohmic contact behavior between GaN film and stainless steel substrate was clearly demonstrated by the current-voltage (I-V) dependence.

关键词： Gallium nitride

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