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Whole-body cryotherapy can reduce the inflammatory response in humans: a meta-analysis based on 11 randomized controlled trials

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SCIENTIFIC REPORTS 2025年第1期15卷 1-12页

作者： He, Jun Zhang, Xinyu Ge, Zhili Shi, Jingjing guo, shuwen Chen, Jun Inst Hyg Ordnance Ind China Ordnance Ind Grp Machine Environm Key Lab 12 Zhangba East Rd Xian 710065 Shaanxi Peoples R China Jilin Univ Sch Publ Hlth Dept Occupat & Environm Hlth Changchun 130021 Jilin Peoples R China Northwestern Polytech Univ Sanhang Inst Brain Sci & Technol Xian 710129 Shaanxi Peoples R China

Whole-body cryotherapy (WBC) is increasingly being studied and used in various populations, mainly focusing on improving the body's regenerative capacity. More comprehensive summaries of anti-inflammatory responses are needed. To systemically assess the effect of WBC on the inflammatory response in humans based on randomized controlled trials (RCTs). Articles about RCTs accessing the effects of whole-body cryotherapy on the levels of inflammatory factors in humans published until August 1, 2024 had been searched in PubMed, Web of Science, Embase and Cochrane library databases. The general information of the included articles and exposure mode, the types and levels of inflammatory factors in serum were extracted. The PEDro scale was used to assess the risk of bias, and the GRADE scale was used to assess the level of certainty of evidence. RevMan 5.4 software were used to conduct the meta-analysis. A total of 11 RCTs in 11 articles were included, and the total sample size was 274. The level of IL-1 beta in serum of people exposed to WBC was lower than that in control group (SMD value was - 2.08pg/mL, P < 0.05), and athletes exposed to WBC were more likely to benefit from this. The level of IL-10 in serum of people exposed to WBC was higher than that in control group ( SMD value was 0.78 pg/mL, P < 0.05), and obese people exposed to WBC were more likely to benefit from this than athletes. WBC effectively reduces inflammation by lowering IL-1 beta and increasing IL-10 levels, offering significant benefits for athletes and obese individuals.

关键词： Whole-body cryotherapy Inflammation Inflammatory factors Randomized controlled trials

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Delta Doping in Silicon by Argon Ion Preimplantation and Nanosecond Laser Annealing

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ACS APPLIED ELECTRONIC MATERIALS 2025年第4期7卷 1558-1564页

作者： Fan, Zhengfang Liu, Yumeng Wang, Yizhuo Song, Wenhan Wei, Hao guo, shuwen He, Li Dan, Yaping Shanghai Jiao Tong Univ Univ Michigan Shanghai Jiao Tong Univ Joint Inst Shanghai 200240 Peoples R China Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Dept Micro Nano Elect Shanghai 200240 Peoples R China Shanghai Polytech Univ Sch Energy & Mat Shanghai 201209 Peoples R China Chinese Acad Sci Inst Semicond State Key Lab Superlatt & Microstruct Beijing 100083 Peoples R China

Delta doping (delta-doping) has extensive applications in advanced metal oxide semiconductor field effect transistors, quantum devices, and deep ultraviolet (DUV) photodetectors. In this work, we demonstrate a novel method for high-concentration phosphorus delta-doping in silicon using pulsed laser annealing assisted with argon preimplantation. The delta-doping layer has a peak phosphorus concentration of 1.44 x 1020 cm-3. Low-temperature Hall measurements reveal that the delta-doping layer is in a metallic state and exhibits a weak localization phenomenon, which implies the formation of a two-dimensional electron gas. As a demonstration, a highly sensitive deep UV photodetector is fabricated by forming an n-type delta-doping layer on a p-type Si substrate. The photoresponsivity of our delta doping PN junction photodiodes is 0.124 A/W, more than 2 times higher than that of the commercial photodiode. This finding offers a promising route for the realization of a highly doped delta-doping layer in silicon, with potential applications in a variety of electronic and optoelectronic devices.

关键词： delta doping argon implantation laser annealing metal-to-insulator transition weak localization phenomenon

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Anti-aliasing multi-bit sigma-delta modulated cobweb-like disk resonator gyroscope with extending input range

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MICROSYSTEMS & NANOENGINEERING 2025年第1期11卷 66页

作者： Fan, Bo Du, Shihao Zhou, Jingchuan Lu, Zhenghao Xu, Dacheng guo, shuwen Tan, Yuyu Chen, Fang Univ South China Sch Elect Engn Hengyang Peoples R China Suzhou Univ Sch Elect Informat Suzhou Peoples R China Univ South China Sch Elect Engn Hunan Prov Key Lab UltraFast Micro Nano Technol & Hengyang Peoples R China Univ Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Joint State Key Lab Sensing Technol Shanghai Peoples R China

A novel cobweb-like disk resonator gyroscope (CDRG) is introduced in this paper, which integrates a multi-bit electro-mechanical sigma-delta modulation (Sigma Delta Mu) system to significantly expand the input angular rate signal range, improving performance metrics like signal-to-noise ratio (SNR) and noise reduction. This design seeks to overcome the limitations associated with single-bit Sigma Delta Mu gyroscope systems by incorporating a linear multi-bit force feedback mechanism that utilizes nonlinear actuators driven by pulse density modulation. The proposed gyroscope system effectively broadens the input range without necessitating higher actuation voltages. In the absence of electronic trimming, experimental findings indicate significant enhancements in performance metrics: the input range, angle random walk, and bias instability improved by 30%, 106.2%, and 487.9%, respectively, when compared to traditional Sigma Delta Mu CDRG system configurations.

关键词： Gyroscopes

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Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers

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JOURNAL OF APPLIED PHYSICS 2025年第12期137卷

作者： Fan, Zhengfang Liu, Yumeng Wang, Yizhuo Wei, Hao Li, He guo, shuwen He, Li Lai, Xiaochun Dan, Yaping Univ Michigan Shanghai Jiao Tong Univ Joint Inst Shanghai 200240 Peoples R China Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Dept Micro Nano Elect Shanghai 200240 Peoples R China Shanghai United Imaging Healthcare Adv Technol Res Shanghai 201807 Peoples R China ShanghaiTech Univ Sch Biomed Engn Photon Sensing & Imaging Lab Shanghai 201210 Peoples R China Shanghai Polytech Univ Sch Energy & Mat Shanghai 201209 Peoples R China Chinese Acad Sci Inst Semicond State Key Lab Superlatt & Microstruct Beijing 100083 Peoples R China Shanghai Clin Res & Trial Ctr Shanghai 201210 Peoples R China

Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. However, the carrying molecules may contaminate the substrate and electrically deactivate the dopants. In this work, we investigate the electrical activities of sulfur dopants in GaAs introduced by the self-assembled molecular monolayer doping technique. The results from secondary ion mass spectrometry and low-temperature Hall measurements show that the activation energy of sulfur dopants is 68 meV, and that 91% of these dopants introduced into GaAs by the self-assembled molecular monolayer doping technique are electrically active. The impact of the carrying molecular contamination is minimal. We employ this monolayer doping technique to create a PN junction diode on a p-type GaAs substrate. The PN junction diode exhibits an outstanding performance with an ideality factor of 1.26 and a rectification ratio up to 104 within the bias of +/- 0.6 V.

关键词： III-V semiconductors

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High Responsivity Analysis of 4H-SiC Phototransistor

IEEE SENSORS LETTERS

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IEEE SENSORS LETTERS 2025年第4期9卷

作者： Huang, Danyang Zhao, Xiaolong guo, shuwen Fu, Xianghe Cui, Peiwen Ye, Sien Yu, Zixia He, Yongning Xi An Jiao Tong Univ Sch Microelect Key Lab Micronano Elect & Syst Integrat Xian City Xian 710049 Peoples R China

The performance of a 4H-SiC n-p-n phototransistor with a 30-mu m thick collector under different bias voltages, light intensities, and temperatures is meticulously studied in this letter. The responsivity of the device to 360-nm incident light is improved to 2.02 x 10(4) A/W with 37 V bias voltage. Bias voltage and incident light intensity have a synergistic effect on the device's responsivity. As the bias voltage increases, the responsivity of the device increases drastically at low incident light intensities. In contrast, the increasing trend slows down at high intensities due to the increased concentration of carriers in the base region, causing the neutral region to widen. The device is capable of responding linearly to 360 nm light with an intensity range exceeding 5 orders of magnitude at 5 V. High-temperature detection characterization indicates that the device biased at 21 V has a responsivity of 2.5 x 10(4) A/W at 453 K, which provides experimental evidence for the 4H-SiC phototransistor's high-temperature detection ability.

关键词： Photoconductivity Dark current Phototransistors Temperature Junctions Detectors Temperature measurement Fabrication Voltage measurement Performance evaluation Electromagnetic wave sensors phototransistor silicon carbide temperature-dependence ultraviolet detection

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CNN-GRU模型在克里金插值中的应用

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石油地球物理勘探 2025年第1期60卷 185-192页

作者：郭天良宋强功郭淑文许辉群长江大学地球物理与石油资源学院湖北武汉430100 东方地球物理公司河北涿州072751 中国石油大港油田勘探开发研究院天津300280

克里金插值是一种可以结合经验知识的建模方法,其中变差函数的求取精度决定了插值的效果,从而影响基于克里金插值的地震反演低频模型的构建。传统的克里金插值方法难以同时使用多个不同的变差函数理论模型来提高低频模型构建的精度,而... 详细信息

克里金插值是一种可以结合经验知识的建模方法,其中变差函数的求取精度决定了插值的效果,从而影响基于克里金插值的地震反演低频模型的构建。传统的克里金插值方法难以同时使用多个不同的变差函数理论模型来提高低频模型构建的精度,而仅仅利用单一的理论模型实现变差函数求解,存在理论模型选择的不确定性、变差函数拟合值偏低的平滑效应以及井距较远产生的空洞效应。为此,引入神经网络CNN-GRU模型,能够自适应拟合向量到对应井之间半方差的复杂关系,进一步实现球状模型、高斯模型、指数模型和空洞效应模型的有效融合,从而解决变差函数的不确定性、平滑效应和空洞效应。该模型考虑了井间的相关性,可便捷地实现逐点的变差分析,处理过程方便,可较好匹配变差函数选取参数的随机性。实际资料应用表明,基于CNN-GRU模型的克里金法可建立一个高精度的低频地震反演模型,其效果相较于传统方法更优。

关键词： CNN-GRU 变差函数克里金低频模型

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Gold Mask-Assisted Fabrication of Contamination-Free Monolayer MoS2 Transistors

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2025年第4期72卷 2073-2077页

作者： Liu, Yumeng Wang, Yizhuo Fan, Zhengfang Wei, Jianyong Khaleghi, Seyed Saleh Mousavi guo, shuwen Lian, Zhentao Wei, Hao Su, Zhijuan Yang, Rui Kudrawiec, Robert Dan, Yaping Univ Michigan Shanghai Jiao Tong Univ Joint Inst Shanghai 200240 Peoples R China Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Dept Micro Nano Elect Shanghai 200240 Peoples R China Univ Melbourne Dept Elect & Elect Engn Melbourne Vic 3010 Australia Shanghai Polytech Univ Sch Energy & Mat Shanghai Peoples R China Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Dept Micro Nano Elect Shanghai Peoples R China Shanghai Jiao Tong Univ Global Inst Future Technol Shanghai 200240 Peoples R China Wroclaw Univ Sci & Technol Dept Semicond Mat Engn PL-50370 Wroclaw Poland

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce polymeric photoresist contamination to 2-D materials, leading to a large uncertainty in their electrical property. In this work, we demonstrate a novel fabrication method using gold as a mask for patterning and etching, which protects 2-D materials from contamination of polymeric photoresists. This technique enables the fabrication of clean monolayer MoS2 transistors with Ohmic contacts. MoS2 devices was mass-produced using both traditional photo-lithography (TPL) and gold mask lithography (GML). Statistics (similar to 200 devices) shows that MoS2 devices produced by TPL vary in electrical properties by three orders of magnitude, while those fabricated by GML are highly reproducible with the conductivity variance within one order of magnitude.

关键词： Gold mask lithography (GML) MoS2 ohmic contact Raman spectrum

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The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices

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Microelectronics Reliability 2025年 171卷

作者： Fu, Xianghe guo, shuwen Peng, Wenbo Zhao, Xiaolong Zhu, Quanzhe He, Yongning Shaanxi Key Laboratory for Electronic Devices and Advanced Chips The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Shaanxi Xi'an710049 China Shannxi Advangced Semiconductor Technology Center Co. Ltd. Shaanxi Xi'an710077 China

The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance. © 2025

关键词： Silicon carbide

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PROFIT DISTRIBUTION IN IPD PROJECTS BASED ON WEIGHT FUZZY COOPERATIVE GAMES

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JOURNAL OF CIVIL ENGINEERING AND MANAGEMENT 2022年第1期28卷 68-80页

作者： guo, shuwen Wang, Junwu Wuhan Univ Technol Sch Civil Engn & Architecture Wuhan Peoples R China Wuhan Univ Sci & Technol Evergrande Sch Management Wuhan Peoples R China

Integrated Project Delivery (IPD) is regarded as an effective project delivery method that can deal with the challenge of the rapid development of the architecture, engineering, and construction (AEC) industry. In the IPD team, the alliance profit is not distributed fairly and effectively due to uncertainty, preventing the achievement of the IPD project goals. This study focuses on optimizing the profit distribution among stakeholders in IPD projects and uses quadratic programming models to solve fuzzy cooperative games in the IPD. A payoff function is used in the fuzzy alliance to determine the characteristics of the interval-valued fuzzy numbers, and different weights of the alliance and the efficiency of the player's participation in the IPD are considered in the profit distribution. A case study is conducted, and the results of the proposed method are compared with those of crisp cooperative games. The results show that the fuzzy cooperative game increases the profit of participants in IPD projects. It is more practical to use weight fuzzy cooperative games than crisp games to express imputation. Moreover, the quadratic programming models and methods result in a fair and efficient profit distribution scheme in IPD projects.

关键词： profit distribution integrated project delivery fuzzy cooperative game weight of alliance interval-valued fuzzy numbers quadratic programming

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Negative Photoresponses in MoS2 Flakes Photogated by PN Junction Diode

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年

作者： Liu, Yumeng Wei, Jianyong Khaleghi, Seyed Saleh Mousavi Wang, Yizhuo Fan, Zhengfang guo, shuwen Song, Wenhan Lian, Zhentao Su, Zhijuan Wei, Hao Kudrawiec, Robert Yang, Rui Dan, Yaping University of Michigan-Shanghai Jiao Tong University Joint Institute China University of Melbourne Department of Electrical and Electronic Engineering VIC3010 Australia Shanghai Polytechnic University School of Energy and Materials Shanghai201209 China Global Institute of Future Technology China Shanghai Jiao Tong University School of Electronic Information and Electrical Engineering Department of Micro/Nano Electronics Shanghai200240 China Wroclaw University of Science and Technology Department of Semiconductor Materials Engineering 27 Wroclaw50-370 Poland

Negative photoresponses in photodetectors can find important applications like image AI and image edge detection. In this Letter, we develop a few-layer MoS2 phototransistor photogated by a silicon-based N+P junction. Negative photovoltage will be generated on the open-circuit N+P junction by grounding the p-type substrate. The negative photovoltage modulates the conductance of the n-type MoS2 flake, creating negative photoconductance in the MoS2 channel. The light-intensity dependent photoresponses are characterized at cryogenic temperatures. The experimental results can be well fitted with the established device theory. © 1980-2012 IEEE.

关键词： Layered semiconductors

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