Y2000-62067-228 0012674采用0.8μm BiCMOS 技术的硅发光二极管光谱特性=Spectral characteristics of Si light emitting diodes in a0.8μm BiCMOS technology[会,英]/Plessis,*** &Aharoni,H.//1998 IEEE International Confere...
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Y2000-62067-228 0012674采用0.8μm BiCMOS 技术的硅发光二极管光谱特性=Spectral characteristics of Si light emitting diodes in a0.8μm BiCMOS technology[会,英]/Plessis,*** &Aharoni,H.//1998 IEEE International Conference onOptoelectronic and Microelectronic Materials and De-vices.—228～231(EC)
Y98-61304-113 99057802/10μs 浪涌电路用肖克莱二极管的物理模拟=Physi-cal modelling of Shockley diode used on 2/10 μsec surgecircuits[会,英]/Charitat,G.& Dilhac,J.-M.//1997Proceedings of the International Semicondu...
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Y98-61304-113 99057802/10μs 浪涌电路用肖克莱二极管的物理模拟=Physi-cal modelling of Shockley diode used on 2/10 μsec surgecircuits[会,英]/Charitat,G.& Dilhac,J.-M.//1997Proceedings of the International Semiconductor Confer-ence,Vol.1.—113～118(UV)介绍了肖克莱二极管电特性的研究结果。对其静态和动态模拟与实验结果进行了比较。对于静态分析讲,其触发机理是雪崩产生的电流;而对动态分析来说,是浪涌信号。利用闪电浪涌信号实验研究了这种器件的工作情况。从物理的、模拟的和实验的观点,讨论了其瞬时特性。
Y2002-63318-27 0327766低功率损耗的12-19KV 4H-SiC针二极管=12-19KV4H-SiC pin diodes With low power loss[会,英]/Sug-awara,Y.＆Takayama,D.//2001 IEEE Proceedingsof the 13th International Symposium on Power Semicon-ductor ...
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Y2002-63318-27 0327766低功率损耗的12-19KV 4H-SiC针二极管=12-19KV4H-SiC pin diodes With low power loss[会,英]/Sug-awara,Y.＆Takayama,D.//2001 IEEE Proceedingsof the 13th International Symposium on Power Semicon-ductor Devices＆ICs.
0603317 提取MOSFETs界面态分布的子带隙光栅极二极管方法=Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs[刊, 英]／***,***／／Electronics Letters．-2003, 39(24)．-1761-1...
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0603317 提取MOSFETs界面态分布的子带隙光栅极二极管方法=Sub-bandgap photonic gated-diode method for extracting distributions of interface states in MOSFETs[刊, 英]／***,***／／Electronics Letters．-2003, 39(24)．-1761-1762(E)
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