Y2001-62724-164 0114820无线频率 IC 应用的金属栅 MOSFET 模拟=Metal-over-gare MOSFET modeling for radio frequency IC ap-plications[会,英]/MacEachern,L.& Manku,T.//2000 IEEE International Symposium on Circuits and **...
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Y2001-62724-164 0114820无线频率 IC 应用的金属栅 MOSFET 模拟=Metal-over-gare MOSFET modeling for radio frequency IC ap-plications[会,英]/MacEachern,L.& Manku,T.//2000 IEEE International Symposium on Circuits and ***.2.—164～167(HC)本文分析了高频特性的金属栅(Metal-Over-gate)MOSFET.研究了栅和金属栅的分布特性,给出小信号参数分析,依据全面分析推导了简化小信号 Y 参数,并用来构成等效小信号抽运电路模型,说明与常用MOSFET 比较,金属栅 MOSFET 育较高 Gmax。
Y2000-62067-457 0016163高击穿、高线性 Ga0.51In0.49P/In0.15Ga0.85As 伪表面高电子迁移率晶体管=High-breakdown and high-lin-earity Ga0.51 In0.49P/In0.15 Ga0.85 As PseudomorphicHEMT[会,英]/Liu,W.C.& Chang,W.L.//1998IEE...
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Y2000-62067-457 0016163高击穿、高线性 Ga0.51In0.49P/In0.15Ga0.85As 伪表面高电子迁移率晶体管=High-breakdown and high-lin-earity Ga0.51 In0.49P/In0.15 Ga0.85 As PseudomorphicHEMT[会,英]/Liu,W.C.& Chang,W.L.//1998IEEE International Conference on Phtoelectrollic and Mi-croelectronic Materials and Devices.—457～459（EC）Y2000-62330-1153 0016164P+NN+光电二极管上的 SiO2/Si3N4防反射敷层优化=Optimization of SiO2/Si3O4 antireflective coating onP+NN+ photodiode[会,英]/Resnik,D.& Vrtacnik,D.//1999 Africon,Vol.2.—1153～1156（PC）
Y98-61460-88 9915070由恒定前向电流激励的 W/n-GaAs 肖特基二极管的电压温度特征:用作温度传感器=Voltage-tempraturecharacteristics of W/n-GaAs Schottky diodes actived bythe constant forward current:application as tempratur...
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Y98-61460-88 9915070由恒定前向电流激励的 W/n-GaAs 肖特基二极管的电压温度特征:用作温度传感器=Voltage-tempraturecharacteristics of W/n-GaAs Schottky diodes actived bythe constant forward current:application as tempraturesensors[会,英]/Marcano,N.& Singh.A.//1998IEEE 2nd International Caracas Conference on *** and Systems.—88～91(YG)
Y2000-62067-39 0009254超高容量光通信系统用飞秒半导体光电器件=Fem-tosecond semiconductor optoelectronic devices for ultra-high throughput optical communication systems[会,英]/Wada,O.//1998 IEEE International Conference...
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Y2000-62067-39 0009254超高容量光通信系统用飞秒半导体光电器件=Fem-tosecond semiconductor optoelectronic devices for ultra-high throughput optical communication systems[会,英]/Wada,O.//1998 IEEE International Conference on Op-toelectronic and Microelectronic Materials and Devices.—39～43(EC)
Y2000-62264-341 0014396功率电子学用的新颖碳化硅二极管和最新技术水平硅二极管比较评价=A comparative evaluation of new sili-con carbide diodes and state-of-the-art silicon diodes forpower electronic applications[会,英]/E...
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Y2000-62264-341 0014396功率电子学用的新颖碳化硅二极管和最新技术水平硅二极管比较评价=A comparative evaluation of new sili-con carbide diodes and state-of-the-art silicon diodes forpower electronic applications[会,英]/Elasser,A.&Kheraluwala,M.//1999 IEEE Industry ApplicationsMeeting,Vol.1.—341～345(PC)
Y2002-63318-3 0327740传输和分布应用中的功率半导体=Power semiconduc-tors in transmission and distribution applications[会,英]/Chokhawala,R.＆Danielsson,B.//2001 IEEE Pro-ceeding of the 13th International Symposium on P...
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Y2002-63318-3 0327740传输和分布应用中的功率半导体=Power semiconduc-tors in transmission and distribution applications[会,英]/Chokhawala,R.＆Danielsson,B.//2001 IEEE Pro-ceeding of the 13th International Symposium on PowerSemiconductor Devices ＆ICs.
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