In order to investigate defects in a-Si:H films, many previous experimental works on ESR and ENDOR have been suggested. This paper reports our results of computer simulation for some dangling bond clusters. Using the ...
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In order to investigate defects in a-Si:H films, many previous experimental works on ESR and ENDOR have been suggested. This paper reports our results of computer simulation for some dangling bond clusters. Using the molecular orbital method, the hyperfine interaction constant and Lande splitting factor are obtained. Compared these results with experimental data and analyzed electronic configuration of these clusters with the defects state, the effects of neighbor hydrogen and other atoms on the dangling bonds are discussed.
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