This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor *** substrate with concave cones was fabricated by nano-imprint lithography and...
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This study focused on the evolution of growth front about AlN growth on nano-patterned sapphire substrate by metal-organic chemical vapor *** substrate with concave cones was fabricated by nano-imprint lithography and wet *** samples with different epitaxy procedures were fabricated,manifesting as two-dimensional growth mode and three-dimensional growth mode,*** results showed that growth temperature deeply influenced the growthmodes and thus played a critical role in the coalescence of *** a relatively high temperature,the AlN epilayer was progressively coalescence and the growth mode was *** this case,we found that the inclined semi-polar facets arising in the process of coalescence were{112^-1}*** when decreasing the temperature,the{112^-2}semi-polar facets arose,leading to inverse pyramid morphology and obtaining the three-dimensional growth *** 3 d inverse pyramid AlN structure could be used for realizing 3 d semi-polar UV-LEd or facet-controlled epitaxial lateral overgrowth of AlN.
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