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检索条件"主题词=2D array"

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High-frequency optoacoustic arrays using parallel etalon detection

High-frequency optoacoustic arrays using parallel etalon det...

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9th Conference on Biomedical Thermoacoustics, Optoacoustics and Acousto-optics

作者： Huang, Sheng-Wen Hou, Yang Ashkenazi, Shal O'donnell, Matthew Univ Michigan Dept Biomed Engn 2200 Bonisteel Blvd Ann Arbor MI 48109 USA Univ Michigan Dept Elect Engn & Comp Sci Ann Arbor MI 48109 USA Univ Washington Ctr Bioengn Seattle WA 98195 USA

ISBN: (纸本)9780819470317

Here we present an ultrasound detection system with an optical end capable of parallel probe. An erbium-doped fiber amplifier, driven by a tunable laser, outputs light at 27 dBm. A lens collimates the light to probe a 6-mu m thick SU-8 etalon and controls the parallel detection area (total array size). A two-lens system guides the reflected light into a photodetector and controls the active area (array element size) on the etalon surface. A translation stage carries the photodetector to detect signals from different array elements. The output of the photodetector is recorded using an oscilloscope. The system's noise equivalent pressure was estimated to be 6.5 kPa over 10 similar to 50 MHz using a calibrated piezoelectric transducer when the -3 dB parallel detection area was 1.8 mm in diameter. The detection bandwidth was estimate to exceed 70 MHz using a focused 50 MHz piezoelectric transducer. Using a single probe wavelength, a Id array with 41 elements and a 1.06 mm aperture length was formed to image a 49 mu m black bead photoacoustically. The final image shows an object size of about 95 mu m in diameter. According to the results, realizing high-frequency 2d optoacoustic arrays using an etalon is possible.

关键词： 2d array high-frequency optoacoustic parallel detection ultrasound

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Recent progress on GaSb-based electrically-pumped VCSELs for wavelengths above 4 μm

Recent progress on GaSb-based electrically-pumped VCSELs for...

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Conference on Image Sensing Technologies - Materials, devices, Systems, and Applications VI

作者： Arafin, S. Jung, H. Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA

ISBN: (纸本)9781510626263

This paper reports the recent progress on the development of GaSb-based vertical-cavity surface-emitting lasers (VCSELs) with a record-long emission wavelength of above 4 mu m using type-II quantum wells. Mid-wave infrared (MWIR) spectral region, covering the 3-6 mu m wavelength range, is technologically very interesting for enabling two major application areas such as sensing and defense/security. Among several types of diode lasers, electrically-pumped continuous-wave operating VCSELs seem to be the most attractive choice owing to their low-power consumption, inherent longitudinal single-mode emission, and simple electro-thermal wavelength tunability. The applicability of MWIR VCSELs for these two major areas are also discussed in this paper. Single-mode low-power (a few mWs) VCSEL operating at room-temperature with reasonable tunability is essential for the sensing application. For the advanced military application, high optical power (with at least a few watts), high-efficiency and high-brightness (>1 W/mm(2)) MWIR lasers are important. Given that the MWIR wavelength regime is eye-safe and has a low-loss atmospheric window, the development of next-generation MWIR laser sources is currently in high demand.

关键词： VCSEL interband cascade laser tunnel junction GaSb type-II quantum well high efficiency high-brightness 2d array

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Variable-size elements in 2d sparse arrays for 3d medical ultrasound

Variable-size elements in 2D sparse arrays for 3D medical ul...

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IEEE International Ultrasonics Symposium (IUS)

作者： diarra, Bakary Robini, Marc Liebgott, Herve Cachard, Christian diarra, Bakary Tortoli, Piero Univ Lyon CREATIS Villeurbanne France Univ Florence Informat Engn Dept I-50121 Florence Italy

ISBN: (纸本)9781467356862

the sparse array technique is an excellent approach to tackle the connection difficulties due to the huge number of elements of 2d matrix arrays. However, the reduction of the element number leads to significant performance reduction, especially in terms of energy loss. An efficient alternative to increase the array sensitivity is using elements wider than lambda/2 while non-grid positioning strategies are adopted. To further decrease the unwanted lobes of the array beam, the variable-size elements array is proposed. This new configuration, combining the randomness of elements position and of their size, leads to excellent beam patterns. In addition, the main lobe width can be controlled to change the array spatial resolution.

关键词： ultrasound imaging 2d array non-grid sparse array simulated annealing

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Uncooled microbolometer detector: recent developments at ULIS

Uncooled microbolometer detector: recent developments at ULI...

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Conference on Infrared Photoelectronics

作者： Tissot, JL Trouilleau, C Fieque, B Crastes, A Legras, O ULIS F-38113 Veurey Voroize France

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Fire-fighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector Therefore, to answer these markets, a 35-mu m pixel-pitch uncooled IR detector technology has been developed enabling high performance 160x120 and 384x4288 arrays production. Besides a wide-band version from uncooled 320x240\45 mu m array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 mu m pixel-pitch detector as well as the wide-band 320x240 infrared focal plane arrays with a pixel pitch of 45 mu m.

关键词： uncooled IRFPA 2d array MWIR LWIR microbolometer amorphous silicon

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High performance and low thermal time constant amorphous silicon based 320 x 240 uncooled microbolometer IRFPA

High performance and low thermal time constant amorphous sil...

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Conference on Infrared Components and Their Applications

作者： Tissot, JL Chatard, JP Fieque, B Legras, O ULIS F-38113 Veurey Voroize France

ISBN: (纸本)0819455954

Uncooled infrared focal plane arrays are being developed for a Aide range of thermal imaging applications. developments are focused on the improvement of their sensitivity enabling the possibility of reducing the pixel pitch in order to decrease the total system size and weight by using smaller optics. We present the ULIS second generation technology used for producing 320 x 240 (384 x 288) and 160 x 120 IRFPA with a pixel pitch of 35 mu m. This enhanced technology was developed by CEA / LETI and has been transferred to ULIS in 2003. The device architecture will be described. This device is well adapted to high volume military applications (i.e. thermal weapons sight, enhanced driver vision) and commercial applications (i.e. predictive maintenance, firefighting, thermography, medical,...) where specifications are the result of a trade-off between pixel pitch, performance and system weight. We have developed for these devices low cost packages. IRFPA electro-optical characterization is presented.

关键词： uncooled infrared focal plane array amorphous silicon 2d array IRFPA

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MWIR uncooled microbolometer, a way to increase the number of applications

MWIR uncooled microbolometer, a way to increase the number o...

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Conference on Infrared Technology and Applications XXXI

作者： Fieque, B Crastes, A Legras, O Tissot, JL ULIS F-38113 Veurey Voroize France

ISBN: (纸本)081945768X

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. ULIS now offers a new type of detector for middle and long wave applications. This detector has been designed from the standard product using the same focal plane array and the same package, only the window is different in terms of spectral transmission. This device is well adapted to high temperature measurements, special industrial processes and gas detection. After some brief microbolometer technological background, we will present the interest for such detectors by comparing LWIR/MWIR detector signal to noise ratio, we will then determine the advantages for different applications. Finally, we will describe and give the main EO characteristics and performances of this Ulis product.

关键词： uncooled IRFPA 2d array MWIR Planck's law microbolometer amorphous silicon

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A Magnetic Resonance Compatible E4d Ultrasound Probe for Motion Management of Radiation Therapy

A Magnetic Resonance Compatible E4D Ultrasound Probe for Mot...

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IEEE International Ultrasonics Symposium (IUS)

作者： Lee, Warren Chan, Heather Chan, Pong Fiorillo, Timothy Fiveland, Eric Foo, Thomas Mills, david Patel, Aqsa Sabatini, James Shoudy, david Smith, Scott Bednarz, Bryan Gen Elect Global Res Ctr Niskayuna NY 12309 USA Univ Wisconsin Dept Med Phys 1530 Med Sci Ctr Madison WI 53706 USA Univ Wisconsin Dept Human Oncol Madison WI USA

ISBN: (纸本)9781538633830

We developed a magnetic resonance compatible real-time, three-dimensional imaging ultrasound probe for motion management of radiation therapy for liver cancer. The probe contains an 18,000-element, 46.8 mm x 21.5 mm matrix array constructed from three tiled transducer modules with integrated beamforming ASICs. The center frequency and -6 dB fractional bandwidth of the probe was 3.6 MHz and 85 percent respectively. Ferromagnetic materials in the acoustic stack, flex interconnect and electronics boards were greatly minimized for magnetic resonance compatibility. The probe and cable were shielded to minimize the impact of radiofrequency noise on both the ultrasound and magnetic resonance images. The probe's low-profile, side-viewing design allows it to be strapped to a patient so that images may be acquired hands-free. We present simultaneously acquired ultrasound and 3 Tesla magnetic resonance images with minimal artifacts in both images.

关键词： E4d matrix array 2d array real-time three-dimensional magnetic resonance MR radiation therapy

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Progress on high-power, high-brightness VCSELs and applications 19

Progress on high-power, high-brightness VCSELs and applicati...

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Conference on Vertical-Cavity Surface-Emitting Lasers XIX

作者： Zhou, delai Seurin, Jean-Francois Xu, Guoyang Zhao, Pu Xu, Bing Chen, Tong van Leeuwen, Robert Matheussen, Joseph Wang, Qing Ghosh, Chuni Princeton Optron Mercerville NJ 08619 USA

ISBN: (纸本)9781628414714

Vertical-cavity surface-emitting lasers (VCSELs) are attractive for many pumping and direct-diode applications due to combined advantages in low cost, high reliability, narrow and thermally stable spectrum, high power scalability, and easy system integration, etc. We report our progress on electrically pumped, GaAs-based, high-power high-brightness VCSELs and 2d arrays in the infrared wavelength range. At 976nm, over 5.5W peak CW output and 60% peak power conversion efficiency (PCE) were demonstrated with 225um oxide-confined device. For 5x5mm arrays, peak PCE of 54% & peak power of >450W at 976nm, peak PCE of 46% & peak power of >110W at 808nm were achieved respectively under QCW conditions. External cavity configuration was used to improve the VCSEL brightness. Single mode output of 280mW & 37% PCE were realized from 80um device. For large 325um device, we obtained single mode (M-2 = 1.1) CW output of 2.1W, corresponding to a brightness of 160MW/cm(2)*sr. Three major areas of applications using such VCSELs are discussed: 1. High brightness fiber output;2. High power, high efficiency green lasers from 2nd harmonic generation. 3.34W green output with 21.2% PCE were achieved;3. Pumping solid state lasers for high energy pulse generation. We have demonstrated Q-switched pulses with 16.1mJ at 1064nm and 4.9mJ with 1W average power at 473nm.

关键词： VCSEL semiconductor laser high power high efficiency high brightness 2d array external cavity fiber coupling dPSS SHG green Q-switch

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High-brightness pump sources using 2d VCSEL arrays

High-brightness pump sources using 2D VCSEL arrays

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Conference on Vertical-Cavity Surface-Emitting Lasers XIV

作者： Seurin, Jean-Francois Xu, Guoyang Wang, Qing Guo, Baiming Van Leeuwen, Robert Miglo, Alexander Pradhan, Prachi Wynn, James d. Khalfin, Viktor Ghosh, Chuni Princeton Optron Mercerville NJ 08619 USA

ISBN: (纸本)9780819480118

Many applications require laser pump sources with high output power (tens to hundreds of Watts) in the smallest spot, with the smallest divergence. Such high-brightness pump sources typically use edge-emitting semiconductor lasers. However, it is also possible to use high-power two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays for this purpose. Using a single 976nm 2d VCSEL array chip in an external cavity configuration, combined with a matching micro-lens array, we have demonstrated more than 30W output power from a 50 mu m/0.22NA fiber, corresponding to a brightness of 10MW/cm(2). sr. This represents a substantial reduction in module complexity compared to edge-emitter based modules with similar brightness. These novel high-brightness pump sources exhibit some well-known intrinsic VCSEL performance features such as wavelength stability and narrow spectrum. Power and brightness can be scaled up using polarization and spectral combining.

关键词： semiconductor lasers vertical-cavity surface-emitting lasers (VCSELs) high-power 2d array pumping fiber-laser solid-state laser brightness etendue beam-quality fiber coupling 9xx nm 808 nm

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Progress in high-power high-efficiency VCSEL arrays

Progress in high-power high-efficiency VCSEL arrays

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Conference on Vertical-Cavity Surface-Emitting Lasers XIII

作者： Seurin, Jean-Francois Xu, Guoyang Khalfin, Viktor Miglo, Aleksandr Wynn, James d. Pradhan, Prachi Ghosh, Chuni L. d'Asaro, L. Arthur Princeton Optron Mercerville NJ 08619 USA

ISBN: (纸本)9780819474759

We present recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808nm. Selectively oxidized, top-emitting single VCSEL emitters with 49% power conversion efficiency were developed as the basic building block of these arrays. Because of the strong GaAs absorption at the 808nm wavelength, the traditional bottom-emitting, substrate-emission configuration is not possible for large arrays that require efficient heat dissipation. The processing and packaging challenges are discussed. We demonstrate 3mm x 3mm arrays and 5mm x 5mm arrays with the GaAs substrate completely removed and mounted on diamond submounts. These arrays emit more than 50W and 120W, respectively, and exhibit a maximum power-conversion efficiency of 42%.

关键词： Semiconductor lasers vertical-cavity surface-emitting lasers (VCSELs) 808nm high efficiency high-power 2d array pumping solid-state laser frequency doubling reliability

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