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IEEE ELECTRON dEVICE LETTERS 2019年第11期40卷 1780-1783页

作者： Mandurrino, Marco Arcidiacono, R. Boscardin, M. Cartiglia, N. dalla Betta, G. F. Ferrero, M. Ficorella, F. Pancheri, L. Paternoster, G. Siviero, F. Tornago, M. Ist Nazl Fis Nucl Sez Torino I-10125 Turin Italy CERN CH-1211 Meyrin Switzerland Univ Piemonte Orientale Dipartimento Sci Farmaco I-28100 Novara Italy Fdn Bruno Kessler I-38123 Trento Italy Ist Nazl Fis Nucl TIFPA I-38123 Trento Italy Univ Trento Dipartimento Ingn Ind I-38123 Trento Italy Univ Torino Dipartimento Fis I-10125 Turin Italy

We designed, produced, and tested RSd (Resistive AC-Coupled Silicon detectors) devices, an evolution of the standard LGAd (Low-Gain Avalanche diode) technology where a resistive ${n}$ -type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and $200\mu \text{m}$ ) while maintaining the signal waveforms suitable for high timing and 4d-tracking performances, as in the standard LGAd-based devices.

关键词： Silicon detectors avalanche charge multiplication timing 4d tracking LGAd AC-coupled readout RSd

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Timing-Optimised 3d Silicon Sensor with Columnar Electrode Geometry

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SENSORS 2025年第3期25卷 926页

作者： Loi, Angelo Lai, Adriano Ye, Jixing dalla Betta, Gian-Franco Ist Nazl Fis Nucleare INFN Dipartimento Fis Sez Cagliari Str Provinciale SestuKm 0700 I-09042 Monserrato Italy Univ Trento Dipartimento Ingn Insd Via Sommar 9 I-38123 Povo Italy TIFPA Via Sommar 9 I-38123 Povo Italy

Among various silicon sensor technologies, 3d silicon sensors demonstrate significant potential for applications requiring exceptional radiation hardness and intrinsic high time resolutions. Silicon pixel sensors with columnar-type electrodes are already operational within the ATLAS experiment, serving in the previous Inner B-Layer (IBL) and the upcoming Inner tracking (ITk) detectors. Concurrently, advancements driven by the next-generation LHCb VELO detector have led to the development of fast-timing 3d trench sensors within the INFN TimeSPOT project, achieving intrinsic time resolutions close to 10 ps. Remarkably, this performance is sustained even under irradiation levels far exceeding the expected limits for High Luminosity LHC operations. despite these advantages, 3d trench sensors face challenges related to fabrication, as their production yields remain lower than those of the well-established columnar-type sensors. This highlights the necessity of designing a timing-optimized 3d sensor that leverages the robustness of a columnar electrode fabrication while achieving an intrinsic time resolution as close as possible to the trench-based designs. The design study addressed in this paper aimed to computationally compare the already designed and characterised TimeSPOT 3d trench sensor with alternative columnar electrode-based geometries, focusing particularly on configurations that approximate trench electrodes using parallel-oriented columnar designs. different geometries and pixel sizes were designed, simulated, and compared. This work presents the entire design and selection effort as well as the preliminary layout of the selected pixel geometries, which are set to feature in FBK's upcoming production run in 2025.

关键词： 3d silicon detectors parallel computing 4d tracking fast timing LHCb VELO HL-LHC

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First test beam measurement of the 4d resolution of an RSd pixel matrix connected to a FAST2 ASIC

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NUCLEAR INSTRUMENTS & METHOdS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS dETECTORS ANd ASSOCIATEd EQUIPMENT 2024年 1065卷

作者： Menzio, L. Siviero, F. Arcidiacono, R. Cartiglia, N. Costa, M. Croci, T. Ferrero, M. Hanna, C. Lanteri, L. Mazza, S. Mulargia, R. Sadrozinski, H-F. W. Seiden, A. Sola, V. White, R. Wilder, M. INFN Turin Italy Univ Piemonte Orientale Vercelli Italy Univ Torino Turin Italy Univ Calif Santa Cruz Santa Cruz CA USA

This paper presents the measurement of the spatial and temporal resolutions of a Resistive Silicon detector (RSd) pixel matrix read out by the FAST2 ASIC, a 16-channel fully custom amplifier developed by INFN Torino using a 110 nm CMOS technology. The test was performed at the dESY test beam facility with a 5 GeV/c electron beam. The RSd matrix is composed of seven 450 mu m pitch pixels with cross-shaped electrodes for a total area of about 1.5 mm(2). The position resolution reached is sigma(x) = 14 +/- 1 mu m, approximately 3.5% of the pitch, and the temporal resolution is sigma(i) = 49 +/- 6 ps. The work demonstrates that RSd sensors with cross-shaped electrodes achieve 100% fill factor and homogeneous resolutions over the whole matrix surface, making them a suitable choice for 4d tracking applications.

关键词： FAST2 Silicon Fast detector Low gain Charge multiplication LGAd 4d tracking

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Characterisation of 3d trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neq cm-2

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FRONTIERS IN PHYSICS 2024年 12卷

作者： Addison, M. Bellora, A. Borgato, F. Brundu, d. Cardini, A. Cossu, G. M. dalla Betta, G. F. La delfa, L. Lai, A. Lampis, A. Loi, A. Obertino, M. M. Vecchi, S. Verdoglia, M. Univ Manchester Dept Phys & Astron Manchester England Sez Torino INFN Turin Italy Univ Torino Dipartimento Sci Agrarie Forestali & Alimentari Turin Italy INFN Sez Padova Padua Italy Univ Padua Dipartimento Fis Padua Italy INFN Sez Cagliari Cagliari Italy Univ Cagliari Dipartimento Fis Cagliari Italy INFN TIFPA Trento Italy Univ Trento Dipartimento Ingn Industriale Trento Italy INFN Sez Ferrara Ferrara Italy

The 3d trench silicon pixel sensors developed by the TimeSPOT collaboration have demonstrated exceptional performance, even after exposure to extreme radiation fluences up to 1 & sdot;1 0 17 1 MeV n e q / cm 2 . This study assesses the radiation tolerance of these sensors using minimum ionizing particles during a beam test campaign. The results indicate that while radiation damage reduces charge collection efficiency and overall detection efficiency, these losses can be mitigated to levels comparable to non-irradiated sensors by increasing the reverse bias voltage. Charge multiplication was observed and characterised for the first time in 3d trench sensors, revealing a distinct operating regime post-irradiation achievable at bias voltages close to 300 V. Additionally, the timing performance of irradiated sensors remains comparable to their non-irradiated counterparts, underscoring their resilience to radiation damage. Currently, 3d trench silicon detectors are among the fastest and most radiation-hard pixel sensors available for vertex detectors in high-energy physics colliders. These findings highlight the potential of these sensors for new 4d tracking systems of future experiments at the Future Circular Hadron Collider (FCC-hh), advancing the capabilities of radiation-hard sensor technology.

关键词： particle tracking detectors solid-state detectors timing detectors 4d tracking radiation hardness high time resolution high luminosity FCC-hh

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Comparative study of the impact of interpad nominal length on the onset of the charge multiplication in standard segmented LGAd with 2 p-stops and bias ring as isolated structures

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APPLIEd RAdIATION ANd ISOTOPES 2024年 208卷 111288页

作者： Lastovicka-Medin, Gordana doknic, Jovana Bozovic, Ivona Kramberger, Gregor Lastovicka, Tomas Andreasson, Jakob Rebarz, Mateusz Univ Montenegro Fac Nat Sci & Math Dzordza Vashingtona 81000 Podgorica Montenegro Jozef Stefan Inst Jamova Cesta 39 Ljubljana 10000 Slovenia Extreme Light Infrastruct ERIC ELI Beamlines Facil Za Radnici 835 Dolni Brezany 25241 Czech Republic

We present an investigation of the interpad region (IP) in the Ultra-Fast Silicon detector (UFSd) Type 10, utilizing a femtosecond laser and the transient current technique (TCT). We elucidate the isolation structure and measure the IP distance between pads, comparing it to the nominal value provided by the vendor. A comparison of sensors with identical layouts but different nominal IP distances (49 mu m vs. 61 mu m) and different processing parameters revealed their significant different charge collection properties in the IP.

关键词： Segmented LGAd UFSd 4d tracking Interpad layout Fill factor Isolation structures JTE p-stop Bias ring pCT

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Characterization of Ultra-Fast Silicon detectors (UFSd) for high energy physics applications

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NUCLEAR INSTRUMENTS & METHOdS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS dETECTORS ANd ASSOCIATEd EQUIPMENT 2024年 1061卷

作者： Zareef, F. Oblakowska-Mucha, A. Szumlak, T. Moffat, N. docheva, A. Cooke, N. Maneuski, d. Bates, R. Bullough, M. AGH Univ Krakow Al Adama Mickiewicza 30 PL-30059 Krakow Poland Ctr Nacl Microelect Barcelona 08193 Spain Univ Glasgow Glasgow G12 8QQ Scotland Micron Semicond Ltd Al 83 Marlborough Rd Lancing BN15 8SJ England

Ultra-fast silicon detectors (UFSd) are a specialized type of radiation detectors based on Low Gain Avalanche detectors (LGAds) that are designed to have extremely fast response times. This work presents detailed results on the study of 50 mu m thin-LGAds with different doping concentrations produced by Micron Semiconductors Ltd. A temperature dependent study of electrical characteristics and infrared laser measurements are presented in this work.

关键词： Particle trackers Timing detectors 4d tracking Low Gain Avalanche diodes (LGAds) Thin detectors

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Thin silicon sensors for extreme fluences: A doping compensation strategy

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NUCLEAR INSTRUMENTS & METHOdS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS dETECTORS ANd ASSOCIATEd EQUIPMENT 2024年 1069卷

作者： Morozzi, A. Fondacci, A. Croci, T. Arcidiacono, R. Boscardin, M. Cartiglia, N. Vignali, M. Centis Ferrero, M. Lanteri, L. Menzio, L. Paternoster, G. Siviero, F. White, R. Moscatelli, F. Passeri, d. Sola, V. Ist Nazl Fis Nucl INFN Sez Perugia Via Alessandro Pascoli I-06123 Perugia Italy Ist Officina Mat IOM CNR Sede Perugia Via Alessandro Pascoli I-06123 Perugia Italy Univ Perugia Dipartimento Ingn Via Goffredo Duranti 93 I-06125 Perugia Italy Ist Nazl Fis Nucl INFN Sez Torino Via Pietro Giuria 1 I-10125 Turin Italy Univ Torino Dipartimento Fis Via Pietro Giuria 1 I-10125 Turin Italy Univ Piemonte Orientale Largo Donegani 2 I-28100 Novara Italy Fdn Bruno Kessler FBK Via Sommar 18 I-38123 Trento Italy

The CompleX project aims at extending the operation range of silicon detectors as 4d trackers up to 5 x 10(17) n(eq)cm(-2). The project envisions achieving this unprecedented radiation tolerance through a novel comprehension of radiation damage saturation, and an innovative design for the Low-Gain Avalanche diodes (LGAds) gain layer with compensated implants. This innovative LGAd design, featuring a co-implantation of acceptor and donor dopants, represents a paradigm shift in radiation-resistant sensor technology. It potentially enables compensated LGAds to maintain functionality at fluences exceeding 10(17) n(eq)cm(-2), significantly extending the operational lifetime of conventional LGAd sensors under extreme fluence conditions. This advantage is further enhanced by the inherent radiation tolerance of thin substrates. This work presents simulations and measurements from the first compensated LGAd production (late 2022, FBK foundry) before and after neutrons irradiation. Numerical modeling strategies using state-of-the-art Technology-CAd tools quantify the reduction in acceptor removal rate due to carbon co-implantation and investigate the behavior of donor removal under irradiation. This comprehensive approach paves the way for the development of highly efficient tracking detectors for future collider experiments.

关键词： Solid-state detectors Silicon sensors 4d tracking Radiation hardness Compensated LGAd TCAd simulation

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TCAd investigation of Compensated LGAd Sensors for extreme fluence

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NUCLEAR INSTRUMENTS & METHOdS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS dETECTORS ANd ASSOCIATEd EQUIPMENT 2024年 1068卷

作者： Fondacci, A. Croci, T. Passeri, d. Morozzi, A. White, R. Siviero, F. Menzio, L. Lanteri, L. Ferrero, M. Arcidiacono, R. Cartiglia, N. Boscardin, M. Vignali, M. Centis Paternoster, G. Sola, V. Moscatelli, F. Ist Officina Materiali IOM CNR Sede Perugia Via Alessandro Pascoli I-06123 Perugia Italy Ist Nazl Fis Nucl INFN Sez Perugia Via Alessandro Pascoli I-06123 Perugia Italy Univ Perugia Dipartimento Ingn Via Goffredo Duranti 93 I-06125 Perugia Italy Ist Nazl Fis Nucl INFN Sez Torino Via Pietro Giuria 1 I-10125 Turin Italy Univ Torino Dipartimento Fis Via Pietro Giuria 1 I-10125 Turin Italy Univ Piemonte Orientale Largo Donegani 2 I-28100 Novara Italy Fdn Bruno Kessler FBK Via Sommar 18 I-38123 Trento Italy

A new gain layer design, whose effective doping profile results from the difference between two overlapping implants of opposite dopant species (e.g. boron and phosphorus), is conceived to extend the operational life of Low-Gain Avalanche diodes (LGAds) to fluences significantly above the present limit of 2.5.10(15) 1 MeV neq/cm(2). Both acceptor and donor atoms will experience doping removal due to irradiation, but their difference will remain fairly constant. The implementation of this ambitious goal necessitates a meticulous process of optimizing the two implants that constitute the gain layer of the Compensated LGAds. To this end, the Synopsys (R) Sentaurus TCAd toolkit, with the most up-to-date release of the Perugia radiation damage model, was employed, enabling a comprehensive investigation of these new sensors. This level of scrutiny is crucial for understanding the behaviour of the first Compensated LGAd production (2022 by FBK) and designing the subsequent batches of Compensated LGAds.

关键词： Silicon sensors 4d tracking Radiation hardness Compensated LGAd TCAd simulation

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The dESY digital silicon photomultiplier: device characteristics and first test-beam results

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NUCLEAR INSTRUMENTS & METHOdS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS dETECTORS ANd ASSOCIATEd EQUIPMENT 2024年 1064卷

作者： diehl, Inge Feindt, Finn Hansen, Karsten Lachnit, Stephan Poblotzki, Frauke Rastorguev, daniil Spannagel, Simon Vanat, Tomas Vignola, Gianpiero Deutsch Elektronen Synchrotron DESY Notkestr 85 D-22607 Hamburg Germany Univ Hamburg Hamburg Germany Univ Wuppertal Wuppertal Germany Univ Bonn Bonn Germany

Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche diodes (SPAds), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAd level. A digital SiPM (dSiPM) was designed at deutsches Elektronen Synchrotron (dESY), combining a SPAd array with embedded CMOS circuitry for on-chip signal processing. A key feature of the dESY dSiPM is its capability to provide hit-position information on pixel level, and one hit time stamp per quadrant at a 3 MHz readout-frame rate. The pixels comprise four SPAds and have a pitch of about 70 mu m. The four time stamps are provided by 12 bit Time-to-digital Converters (TdCs) with a resolution better than 100 ps. The chip was characterized in the laboratory to determine dark count rate, breakdown voltage, and TdC characteristics. Test-beam measurements are analyzed to assess the dESY dSiPMs performance in the context of a 4d-tracking applications. The results demonstrate a spatial hit resolution on a pixel level, a minimum-ionizing particle detection efficiency of about 30 % and a time resolution in the order of 50 ps.

关键词： Silicon CMOS sensor digital silicon photomultipliers dSiPM Photon detection APds SPAds Particle detection tracking detectors 4d tracking Test beam

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4d Track Reconstruction on Free-Streaming data with PANdA at FAIR

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Computing and Software for Big Science 2024年第1期8卷 1-13页

作者： Taylor, Jenny Papenbrock, Michael Stockmanns, Tobias Kliemt, Ralf Johansson, Tord Akram, Adeel Schönning, Karin Uppsala University Uppsala Sweden GSI Helmholtzzentrum für Schwerionenforschung GmbH Darmstadt Germany Forschungszentrum Jülich GmbH Jülich Germany Ruhr-Universität Bochum Institut für Experimentalphysik I Bochum Germany

A new generation of accelerator-based experiments in subatomic physics is being developed, where the challenge of separating rare signal processes from background at high intensities requires a change of trigger paradigm. At the future PANdA experiment at FAIR, hardware triggers will be abandoned and instead a purely software-based system will be used. This requires novel reconstruction methods with the ability to process data from many beam–target interactions simultaneously. A 4d tracking algorithm, based on the cellular automaton, has been developed which will utilize the timing information from detector signals. Simulation studies have been performed to test its performance on the foreseen free-streaming, i.e., continuous readout from the PANdA detector, where all processing is on the software level. For this purpose, a novel quality assurance method, tailored for tracking on free-streaming data has been developed and implemented. Benchmark studies on PANdA software show that at higher interaction rates, 4d tracking performs better than the 3d algorithm in terms of efficiency, 84% compared to 77%. In addition, the fake track suppression is greatly improved, reducing the rate of fake tracks of “ghosts” by about 50%. © The Author(s) 2024.

关键词： 4d tracking Cellular automaton Free-streaming data PANdA Quality assurance

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