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14th International Conference on Microwave and Millimeter Wave Technology (ICMMT)

作者： Ma, Mingming You, Fei Wei, Minyi Qian, Ting Chen, Yin Pan, Maojun Wang, Yu Shen, Ce Qin, Rongxing Wu, Tao He, Songbai Univ Elect Sci & Technol China Chengdu Peoples R China Nanjing Elect Devices Inst Nanjing Peoples R China

ISBN: (纸本)9781665467520

The two-port abcd parameter is widely applied to a cascade network. Still, it is hard to utilize the abcd parameter when the number of ports is more than two. In order to solve this problem, the generalized multiport conversion for complex terminal impedance between S parameter and abcd parameter is proposed in this paper, which can be integrated in circuit simulators and vector network analyzer to obtain abcd parameter directly. Moreover, while several pairs of ports are connected each other, the S parameter of the remaining ports is derived, which contributes to taking advantage of S parameter for multiport network analysis, especially for complicated topologies and coupling mechanisms. The conversion between S and abcd parameter of a four-port asymmetrical coupled transmission line is verified in this paper, and the good agreement demonstrates the proposed theory well.

关键词： abcd parameter multiport network analysis S parameter

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Modeling and Analysis of Crosstalk Induced Effects in Multiwalled Carbon Nanotube Bundle Interconnects: An abcd parameter-Based Approach

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IEEE TRANSACTIONS ON NANOTECHNOLOGY 2015年第2期14卷 259-274页

作者： Sahoo, Manodipan Ghosal, Prasun Rahaman, Hafizur Indian Inst Engn Sci & Technol Dept Informat Technol Sibpur 711103 Howrah India

In this paper, the crosstalk effects in both small and large diameter multiwalled carbon nanotube bundle interconnects (MWCNTs) for the future nanoscale integrated circuits are studied with the help of abcd parameter matrix approach for global levels of interconnects at 22- and 14-nm technology nodes. Here, isolated MWCNTs are modeled using an equivalent single conductor transmission line. The simulation results show that the results are at par with the result of SPICE model. It is observed that performance wise, the large diameter MWCNT bundles are better than both small diameter MWCNT bundles and copper wire for both repeated and unrepeated interconnects. The same trend is observed with the number of inserted repeaters. For repeated wires, the optimized placement of repeaters offsets the delay advantage numbers of MWCNT bundles over copperwire. Technology scaling adversely impacts the delay advantage numbers of small diameter MWCNT bundles. As far as the worst-case crosstalk noise peak voltage is concerned, the large diameter MWCNT bundles also outperform both small diameter MWCNT bundles and copper wire for longer interconnects. However, for shorter interconnects, copper wire and small diameter bundles outclass the large diameter bundles due to their relatively larger time constant. We have compared our crosstalk analysis results with the earlier work to justify the validity of our proposed model and observed that the results with our model are in well conformity with the existing work. It is seen that even the tall Cu vias are not going to significantly affect the performance of MWCNT bundle interconnects. Twice the minimum width global level interconnects are the optimal choice to achieve the maximum delay advantage using MWCNT bundle interconnects in comparison with Cu-based interconnects. Finally, our analysis shows that from the performance and signal integrity perspective, the large diameter MWCNT bundles are a suitable alternative to both small diameter MW

关键词： abcd parameter carbon nanotube crosstalk delay integrated circuit interconnects multiwalled carbon nanotube (MWCNT) nanoscale noise SPICE

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Modeling of Crosstalk Induced Effects in Copper-Based Nanointerconnects: An abcd parameter Matrix-Based Approach

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JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS 2015年第2期24卷

作者： Sahoo, Manodipan Rahaman, Hafizur Indian Inst Engn Sci & Technol Dept Informat Technol Howrah 711103 W Bengal India

Aggressive miniaturization has led to severe performance and signal integrity issues in copper-based interconnects in the nanometric regime. As a consequence, development of a proper analytical model for such interconnects is extremely important. In this work, an abcd parameter matrix-based model is presented for fast and accurate estimation of crosstalk delay and noise for identically coupled copper-based nanointerconnect systems. Using the proposed model, the crosstalk delay and noise are estimated in copper based nanointerconnects for intermediate and global interconnects at the future integrated circuit technology nodes of 21 and 15 nm, respectively. Proposed model has been compared with SPICE and it is found that this model is almost 100% accurate as SPICE with respect to both the crosstalk delay as well as noise. Moreover, this model is as much as similar to 63 and similar to 155 times faster, respectively. From the crosstalk delay and noise analysis of unrepeated interconnects, it is observed that both delay and noise contribution will increase in scaled technology nodes. The same trend is observed also for the repeated interconnects. Also more number of repeaters and higher repeater sizes will be needed for delay minimization as we scale deeper. So as far as crosstalk induced effects are concerned, the copper interconnects will face a huge challenge to overcome in nanometer technology nodes.

关键词： Performance signal integrity nanometric abcd parameter crosstalk delay noise nanointerconnect SPICE repeater

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An abcd parameter Based Modeling and Analysis of Crosstalk Induced Effects in Multiwalled Carbon Nanotube Bundle Interconnects

An ABCD Parameter Based Modeling and Analysis of Crosstalk I...

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27th International Conference on VLSI Design / 13th International Conference on Embedded Systems (VLSID)

作者： Sahoo, Manodipan Ghosal, Prasun Rahaman, Hafizur Bengal Engn Sci Univ Dept Informat Technol Sibpur 711103 Howrah India Univ N Texas Dept Comp Sci & Engn Denton TX 76201 USA

ISBN: (纸本)9781479925124

Crosstalk effects in large diameter Multiwalled Carbon Nanotube bundle interconnects (MWCNTs) for the future nanoscale integrated circuits are investigated with the help of abcd parameter matrix approach for intermediate and global interconnects at 22 nm and 14 nm technology nodes. Here, isolated MWCNTs are modeled using an equivalent single conductor transmission line. Simulation results show that the proposed model matches very well with the SPICE model available in literatures. The worst case crosstalk induced delay and peak crosstalk noise voltages for MWCNT bundle interconnects are derived and compared to those of conventional copper interconnects. The worst case crosstalk delays for MWCNT bundle interconnects are less than 15% of that of copper interconnects for 1 mm long intermediate and less than 20% of that of copper interconnects for 2 mm long global interconnects for both the technology nodes. The ratio of peak crosstalk noise voltage of MWCNT bundles to that of Copper is seen to decrease in scaled technology. We have compared our crosstalk analysis results with the earlier work to verify the validity of our proposed model and observed that the results with our model are in good agreement with the existing work. Finally, our analysis shows that from the signal integrity perspective, large diameter MWCNT bundles are a very good alternative to copper interconnects for future Integrated circuit technology generations.

关键词： Multiwalled Carbon Nanotube (MWCNT) Interconnects Nanoscale Integrated Circuit abcd parameter SPICE Crosstalk Delay Noise

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An abcd parameter Based Modeling and Analysis of Crosstalk Induced Effects in Multilayer Graphene Nano Ribbon Interconnects

An ABCD Parameter Based Modeling and Analysis of Crosstalk I...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： Sahoo, Manodipan Rahaman, Hafizur Bengal Engn & Sci Univ Dept Informat Technol Sibpur 711103 Howrah India

ISBN: (纸本)9781479934324

Crosstalk effects in Multilayer Graphene Nano Ribbon interconnects (GNRs) are investigated with the help of abcd parameter matrix approach for intermediate and global level interconnects at 11 nm technology node. For long intermediate and global levels of interconnects, the worst case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are far lesser than that of copper interconnects. Though neutral GNR interconnects introduce lesser worst case peak crosstalk noise voltage, it contributes more noise than its doped counterpart. Perfectly specular, doped multilayer zigzag GNR interconnects prove to be a suitable alternative to copper interconnects for future Integrated circuit.

关键词： Graphene Nano Ribbon (GNR) Interconnects abcd parameter Crosstalk Delay Noise Specular

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An abcd parameter Based Modeling and Analysis of Crosstalk Induced Effects in Multilayer Graphene Nano Ribbon Interconnects

An ABCD Parameter Based Modeling and Analysis of Crosstalk I...

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IEEE International Symposium on Circuits and Systems

作者： Manodipan Sahoo Hafizur Rahaman Department of Information Technology Bengal Engineering & Science University Shibpur Howrah-711103 India

ISBN: (纸本)9781479934331

关键词： Graphene Nano Ribbon (GNR) Interconnects abcd parameter Crosstalk Delay Noise Specular

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Design and Fabrication of Scale-Down Model of 620 MVA, 275 kV Transmission Line

Design and Fabrication of Scale-Down Model of 620 MVA, 275 k...

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International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy (ETAEERE)

作者： Mukhia, Akash Deep Gautam, Anwesh Pradhan, Suyog Gupta, Sandip Kumar Sikkim Manipal Univ Elect & Elect Dept Gangtok Sikkim India

ISBN: (纸本)9789811043949;9789811043932

In this paper a 620 MVA, 275 kV and 400 km transmission line is scaled down to 0.5 kVA, 230 V and 400 km transmission line keeping the per unit values of actual system and scale-down system same. The current carrying capacity of the scale-down system is kept 3A and can be used where single-phase supply is available. The scale-down model of the actual system is fabricated using Pi model in sections of 50 km length. The result of fabricated model is also validated using Simulink simulation. The developed model can be used to determine the abcd parameter of transmission line which is same for actual system and scale-down model. In future any kind of laboratory model of FACTS devices can be connected to the developed model for practical purposes and study the dynamic performance of transmission line.

关键词： Modeling of transmission line Scale down model of transmission line Short circuit test and open circuit test abcd parameter

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Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects

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JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS 2017年第6期26卷 1750102-1750102页

作者： Sahoo, Manodipan Rahaman, Hafizur Haldia Inst Technol Dept AEIE Hatiberia Haldia 721657 W Bengal India Indian Inst Engn Sci & Technol Shibpur Sch VLSI Technol Bot Garden Howrah 711103 W Bengal India

Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of abcd parameter matrix approach for intermediate- and global-level interconnects at 11 nm and 8 nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1 mm long intermediate interconnects and less than 7% of that of copper interconnects for 5 mm long global interconnects at 8 nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.

关键词： Graphene nanoribbon (GNR) interconnects nanoscale integrated circuit abcd parameter crosstalk delay noise specular

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Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability

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MICROELECTRONICS RELIABILITY 2016年 63卷 231-238页

作者： Sahoo, M. Rahaman, H. Haldia Inst Technol Dept Appl Elect & Instrumentat Engn Haldia 721657 W Bengal India Indian Inst Engn Sci & Technol Sch VLSI Technol Sibpur 711103 Howrah India

Crosstalk induced overshoot/undershoot effects in multilayer graphene nano ribbon interconnects (MLGNRs) are investigated with the help of abcd parameter matrix approach for intermediate level interconnects at both 11 nm and 8 nm technology node. The worst case crosstalk induced peak overshoot voltage for perfectly specular, doped multilayer zigzag GNR interconnects is comparable to that of copper interconnects. The performance of neutral GNR interconnects is better than that of its doped counterpart with respect to peak crosstalk overshoot. But from the perspective of overall overshoot width and overshoot area contribution, perfectly specular, doped MLGNR interconnects outperform all other alternatives. As far as the effective electric field across the gate oxide is concerned, the doped MLGNR interconnects outperform neutral ones and copper interconnects for all the cases. It is estimated that the doped perfectly specular multilayer GNR interconnects have gate oxide failure rates (AFR) of similar to 240x and similar to 790x lesser than copper interconnects for 11 nm and 8 nm technology node respectively. So, from the gate oxide reliability perspective, perfectly specular, doped multilayer zigzag GNR interconnects are great advantageous to copper interconnects for the future integrated circuit technology generations. (C) 2016 Elsevier Ltd. All rights reserved.

关键词： Crosstalk Overshoot/undershoot Multilayer Graphene Nano Ribbon (MLGNR) Interconnects abcd parameter Specular Neutral Gate oxide failure rate AFR Gate oxide reliability Integrated circuit

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Voltage Transfer Characteristics of an Insulation Transformer Up to 1 MHz

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IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY 2016年第4期58卷 1207-1216页

作者： Kim, Kwangho Kim, Sungjun Nah, Wansoo Sungkyunkwan Univ Dept Elect & Elect Engn Suwon 440746 South Korea Yura Corp Dept Elect R&D Ctr Songnam 463400 South Korea

This paper proposes a novel method that analyzes voltage transfer characteristics from the primary to the secondary side of an insulation transformer. Raw data of transfer characteristics were obtained from the S-parameter measurement using vector network analyzer. To characterize transfer characteristics of an insulation transformer, the proposed method uses abcd parameters, which are transformed from the measured S-parameters. This method enables us to predict the transferred pulse voltage waveforms in the secondary side as well as to predict the frequency-dependent gain of the insulation transformer. It is confirmed that the predicted voltage waveforms and gains in the secondary side coincide to the measured voltage waveforms quite accurately, which shows the validness of the proposed method.

关键词： abcd parameter insulation transformer S-parameter transfer characteristics voltage gain

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