A two-point orientation auto-correlation function (TP-OACF) was developed in order to quantify the spatial distribution of targeted texture components. An example of a TP-OACF was demonstrated using an idealized orien...
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A two-point orientation auto-correlation function (TP-OACF) was developed in order to quantify the spatial distribution of targeted texture components. An example of a TP-OACF was demonstrated using an idealized orientation map. Characteristics of the spatial distribution of major texture components in 6022-T4 Al sheets deformed in plane-strain tension were also quantified using a TP-OACF. The results showed that {110} < 112 > and {123} < 634 > orientations (in {ND} < PD > notation, where PD is the pulling direction) tend to form localized diagonal and horizontal bands through the thickness, respectively, after the plane-strain deformation. The cube orientation on the surface initially showed a relatively strong texture band along the RD, but this banding behavior was less significant after the plane-strain deformation.
A composite vector method for predicting beta-hairpin motifs in proteins is proposed by combining the score of matrix, increment of diversity, the value of distance and auto-correlation information to express the info...
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A composite vector method for predicting beta-hairpin motifs in proteins is proposed by combining the score of matrix, increment of diversity, the value of distance and auto-correlation information to express the information of sequence. The prediction is based on analysis of data from 3,088 non-homologous protein chains including 6,035 beta-hairpin motifs and 2,738 non-beta-hairpin motifs. The overall accuracy of prediction and Matthew's correlation coefficient are 83.1% and 0.59, respectively. In addition, by using the same methods, the accuracy of 80.7% and Matthew's correlation coefficient of 0.61 are obtained for other dataset with 2,878 non-homologous protein chains, which contains 4,884 beta-hairpin motifs and 4,310 non-beta-hairpin motifs. Better results are also obtained in the prediction of the beta-hairpin motifs of proteins by analysis of the CASP6 dataset.
In this letter, a velocity measurement algorithm based on auto-correlation in a single frame for IEEE 802.11ad is proposed. The periodicity of the Golay sequences in the preamble is exploited in the algorithm to estim...
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In this letter, a velocity measurement algorithm based on auto-correlation in a single frame for IEEE 802.11ad is proposed. The periodicity of the Golay sequences in the preamble is exploited in the algorithm to estimate the time delay and achieve the velocity measurement at the same time. The improved measuring accuracy is obtained as the effect of noise is suppressed by designing and utilizing the auto-correlation function.
The influences of stress on the interfacial reactions of Ti and Ni metal thin films on (0 0 I)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth...
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The influences of stress on the interfacial reactions of Ti and Ni metal thin films on (0 0 I)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to enhance the formation of Ti and Ni silicides. For Ti and Ni on stressed (0 0 I)Si substrates after rapid thermal annealing, the thicknesses of TiSi2 and NiSi films were found to decrease and increase with the compressive and tensile stress level, respectively. The results clearly indicated that the compressive stress hinders the interdiffusion of atoms through the metal/Si interface, so that the formation of metal silicide films was retarded. In contrast, tensile stress facilitates the interdiffusion of atoms. As a result, the growth of Ti and Ni silicide is promoted. (C) 2002 Published by Elsevier Science B.V.
A new model of low-frequency fluctuations, based on the thermionic current model [Mathematical Handbook for Scientists and Engineers, New York, 1961;Introduction to Statistical Radio-Physic. Part 1: Random Processes, ...
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A new model of low-frequency fluctuations, based on the thermionic current model [Mathematical Handbook for Scientists and Engineers, New York, 1961;Introduction to Statistical Radio-Physic. Part 1: Random Processes, Moscow, 1976 (in Russian)], has been designed. The proposed model provides calculation of realization, auto-correlation function (ACF) and power spectral density (PSD) of an m-level quantum signal. This model has allowed to explain the reason of very small magnitude of low-frequency (LF) boundary (10(-4) to 10(-2) Hz) on experimental spectra of LF current fluctuations in a metal thermionic cathodes. (C) 2003 Published by Elsevier Science B.V.
Recognizing and distinguishing the dynamic characteristics of scanning tunneling microscopy (STM) system is fatal for studying STM image. In this paper, a method for analyzing system's characteristics by using a d...
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Recognizing and distinguishing the dynamic characteristics of scanning tunneling microscopy (STM) system is fatal for studying STM image. In this paper, a method for analyzing system's characteristics by using a damped harmonic oscillator model is presented. The model is driven by random force and all of its properties are described by damping and periodic. For the general solution of such harmonic oscillator's Langevin equation is deduced and the auto-correlation function (ACF) is obtained for fitting curve. It is shown that damping and periodic property of the two curves have a good agreement by comparing the fitting curve with the auto-correlation curve of time series dates which are acquired by STM. It could be concluded that the damped harmonic oscillator model and auto-correlation method are feasible for analyzing the dynamic characteristics of STM system.
The structural evolution in Ge+ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were i...
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The structural evolution in Ge+ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge+ to a dose of 5 X 10(15) ions/cm(2). A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 degreesC annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 degreesC or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 degreesC. The results are discussed in terms of energy variation in the system. (C) 2003 Elsevier Science B.V. All rights reserved.
Below, we briefly report on the progress in the development of the Filter Diagonalization technique when filtering is carried out with the aid of Finite Fourier Transform (FFT) eigenfunctions. During recent years inte...
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Below, we briefly report on the progress in the development of the Filter Diagonalization technique when filtering is carried out with the aid of Finite Fourier Transform (FFT) eigenfunctions. During recent years interest in these functions, also known as 'prolates', or 'slepians', has increased among scientists doing research in the field of signal processing. The main explanation to this follows from the set of very special extremal and orthogonality properties exibited by the FFT eigenfunctions. Recent results of Walter and Shen on sampling with prolate spheroidal functions will necessary produce a new wave of interest. In the presented, Filter diagonalization machinery, we show that the sampling formula of Walter and Shen simplifies essentially the computation of matrix elements as certain 2D-integrals involving FFT eigenfunctions.
High-resolution transmission electron microscopy in conjunction with autocorrelationfunction analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (001)Si wa...
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High-resolution transmission electron microscopy in conjunction with autocorrelationfunction analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (001)Si wafers were preamorphized with 5 and 10 keV Ge+ to a dose of 5 x 10(15) ions/cm(2). A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge+ than that for 5 keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10 keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms. (c) 2005 Elsevier B.V. All rights reserved.
In this paper, firstly, we focus on the construction of LAS code which is made up of LA code and LS code. Simulations show that LAS codes have Interference Free Window (IFW). Then simulations for theirs auto-correlati...
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ISBN:
(纸本)9781467344975
In this paper, firstly, we focus on the construction of LAS code which is made up of LA code and LS code. Simulations show that LAS codes have Interference Free Window (IFW). Then simulations for theirs auto-correlation functions and cross-correlationfunctions are performed. Lastly, the BER performances of Gold code and LAS code used by multi-user are simulated. Simulation shows that the BER performance of LAS code is much better than Gold code's.
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