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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： Priyadarshini, Neha Sarkar, Mukul Indian Inst Technol Dept Elect Engn Delhi 110016 India

ISBN: (纸本)9781728133201

A high dynamic range image sensor which uses a linear-logarithmic counting scheme to provide user programmable sensitivity variation for low light imaging application is presented. In a 3T pixel, if the photo-signal information is converted to time domain instead of voltage, the dynamic range for low light signals is no longer limited by sensor noise floor. However, it is still limited by the readout circuitry which is required to obtain digital bits for image acquisition. The proposed algorithm prevents the saturation of the readout circuitry by modifying the frequency of chip level counter so that it counts in a linear-logarithmic manner. The linear-logarithmic counter is integrated with the column circuitry and pixel in such a way that it enables low light photo-signal capture without losing the high light signal information. A chip with the proposed technique has been designed in 0.35 mu m AMS OPTO process. The test chip has a 128 x 128, 3T pixel array with 9 mu m pixel pitch. Simulation results show that maximum dynamic range obtained is 95 dB. The imager provides a user-programmable sensitivity curve depending upon the application. The extra hardware is added only at the chip level and no ramp generator is used, making the technique area and power efficient efficient.

关键词： cmos image sensor low light imaging dynamic range sensitivity logarithmic time-to-digital

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On-cmos image sensor Processing for Lane Detection

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sensorS 2021年第11期21卷 3713-3713页

作者： Lee, Soyeon Jeong, Bohyeok Park, Keunyeol Song, Minkyu Kim, Soo Youn Dongguk Univ Dept Semicond Sci Seoul 04620 South Korea

This paper presents a cmos image sensor (CIS) with built-in lane detection computing circuits for automotive applications. We propose on-CIS processing with an edge detection mask used in the readout circuit of the conventional CIS structure for high-speed lane detection. Furthermore, the edge detection mask can detect the edges of slanting lanes to improve accuracy. A prototype of the proposed CIS was fabricated using a 110 nm CIS process. It has an image resolution of 160 (H) x 120 (V) and a frame rate of 113, and it occupies an area of 5900 mu m x 5240 mu m. A comparison of its lane detection accuracy with that of existing edge detection algorithms shows that it achieves an acceptable accuracy. Moreover, the total power consumption of the proposed CIS is 9.7 mW at pixel, analog, and digital supply voltages of 3.3, 3.3, and 1.5 V, respectively.

关键词： cmos image sensor computer vision edge detection low power consumption single-slope ADC

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A time-resolved near-infrared spectroscopy based on cmos image sensor 18

A time-resolved near-infrared spectroscopy based on CMOS ima...

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Conference on Optical Biopsy XVIII - Toward Real-Time Spectroscopic Imaging and Diagnosis

作者： Lioe, De Xing Hakamata, Masashi Yasutomi, Keita Kagawa, Keiichiro Niwayama, Masatsugu Fukushi, Yasuko Yamamoto, Seiji Kawahito, Shoji Shizuoka Univ Res Inst Elect Naka Ku 3-5-1 Johoku Hamamatsu Shizuoka 4328011 Japan Hamamatsu Univ Sch Med Preeminent Med Photon Educ & Res Ctr Higashi Ku 1-20-1 Handayama Hamamatsu Shizuoka 4313192 Japan

ISBN: (纸本)9781510632325

Time-resolved (TR) near-infrared spectroscopy (NIRS) offers non-invasive clinical applications in monitoring the blood oxygenation, where absolute values of oxygenated and deoxygenated hemoglobin, and absorption and scattering coefficient, can be obtained. Various detectors have been utilized to realize a TR-NIRS system, such as PMT, SiPM, and SPAD. This paper proposed a prototype NIRS device implemented using a 128 x 128 lock-in pixel cmos image sensor (CIS) based on the lateral electric field-charge modulator (LEFM) to achieve high time resolution. Preliminary experiments based on the reflectance of an agar phantom with varying absorption coefficient have been conducted and the ability to detect the changes in the absorption coefficient has been demonstrated. The reflectance of the agar phantom is directly observed by the image sensor, which was operated at a time-window of 900 ps with a sensor detection area of 2.9mm(2). The results suggest that a NIRS device using CIS is feasible, which opens the potential of a miniature wearable time-resolved NIRS device.

关键词： cmos image sensor near-infrared spectroscopy (NIRS) time-resolved lateral electric field-charge modulator (LEFM) time-of-flight (TOF) lock-in pixel

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Wavelength Division Multiplexing Method Using Camera with cmos image sensor for Visible Light Communication 43

Wavelength Division Multiplexing Method Using Camera with CM...

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43rd International Conference on Telecommunications and Signal Processing (TSP)

作者： Akutsu, Ken Otani, Akihito Nihon Univ Grad Sch Sci & Technol Tokyo Japan Nihon Univ Dept Elect Engn Tokyo Japan

ISBN: (纸本)9781728163765

In this paper, we propose a wavelength division multiplexing method to improve communication speed in visible light communication using line scan sampling. The proposed method performs wavelength-division multiplexing (WDM) using a sampling technology that uses the line scan characteristics of a complementary metal oxide semiconductor (cmos) image sensor and red, green and blue (RGB) filters that are arranged at individual pixels according to the Bayer pattern. With the proposed method, a communication speed three-times higher than the conventional monochromatic light communication method can be expected. The feasibility of the proposed method was evaluated, and the feasibility was confirmed from the results.

关键词： Visible Light Communication cmos image sensor Wavelength-Division Multiplexing (WDM)

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A Study of the cmos image sensor Semiconductor Business: Factors Maintaining the Long-Term Manufacturing Technology Superiority of IDM Companies 28

A Study of the CMOS Image Sensor Semiconductor Business: Fac...

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28th International Symposium on Semiconductor Manufacturing (ISSM)

作者： Asami, Tetsuya Tsujimoto, Masaharu Tokyo Inst Technol Dept Innovat Sci Tokyo Japan

ISBN: (纸本)9781665403641

In recent years, semiconductor products have become increasingly important as essential parts of numerous technological devices. In addition, competition is becoming increasingly fierce. Currently, many semiconductor businesses have a horizontal specialization business structure. However, in the cmos image sensor (CIS) business, vertically Integrated Device Manufacturer (IDM) companies are leading businesses possessing significant technological advantages. This study applies Baldwin's (2004) functional module analysis method to clarify how IDM companies maintain their superiority in CIS, and examines in particular their knowledge acquisition method for improving the main characteristics of CIS. The basic questions this study addresses are why the CIS business has been able to promote the business of IDM companies, and why has it maintained its advantage over the last 10 years. This study seeks to examine this question and present the mechanism behind its superiority. First, the modules of CIS products and development task flow are separated into modules by function and analyzed. The sensor core and system core require different design capabilities. The photodiode of the sensor core is designed through a combination and application of semiconductor physics and optical knowledge by highly expert design, device physics, and process engineers. In IDM companies, development is accomplished in a complementary manner with mutually integrated technologies. We note particularly that the boundary between companies in the horizontal specialization business in the sensor core design affects technological improvement and the speed of growth. During the heyday of SoC in 1990, technology was transferred and production outsourced from the world's top-class IDM to foundries. Based on the current situation two decades later, we analyzed the behavior at that time by back-casting and extracted five growth factors. Five growth opportunities for latecomers to the high-tech manufacturing

关键词： semiconductor cmos image sensor module

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X-ray photon counting performance of Front-illuminated scientific cmos image sensor 9

X-ray photon counting performance of Front-illuminated scien...

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Conference on X-Ray, Optical, and Infrared Detectors for Astronomy IX as part of SPIE Astronomical Telescopes + Instrumentation Conference

作者： Hiraga, Junko S. Kamata, Yasuaki Yuhi, Daito Urabe, Yukino Yoshida, Akihiro Nakajima, Hiroshi Kwansei Gakuin Univ Dept Phys Sch Sci & Technol 2-1 Gakuen Sanda Hyogo 6661337 Japan Kanto Gakuin Univ Coll Sci & Engn Kanazawa Ku Yokohama Kanagawa 2368501 Japan

ISBN: (纸本)9781510636965

We developed an X-ray imaging spectrometer with a high timing resolution. cmos image sensors, widely used in optical imaging, have an excellent time resolution with considerably low readout noise. We performed experiments using a Zyla cmos image sensor manufactured by Andor Technology pic. (UK). It employs a front illuminated(FI) scientific cmos (scmos) with each pixel size of 6.5x6.5 mu m(2). We found that nearly all X-ray events spread more than 5x5 pixels and obtained good energy resolution of 260 eV at 5.9 keV at room temperature. The spectrum shows no degradation at lower energy, which imply that there is negligibly small charge loss. We report photon counting performance for a broad range of X-rays from 3-25keV at room temperature.

关键词： X-ray cmos image sensor photon counting

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Controllable OTA Slew-rate for cmos image sensor 32

Controllable OTA Slew-rate for CMOS Image Sensor

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32nd International Conference on Microelectronics (ICM)

作者： Ibrahim, Ola Hesham, Rana Soltan, Ahmed Nile Univ Nanoelect Integrated Syst Ctr NISC Giza Egypt

ISBN: (纸本)9781728196640

In this work, a proposed circuit is implemented using tsmc 0.18 um technology of area 16642 um(2) with supply voltage equals 5V. A proposed implementation of a controllable Operational Transconductance Amplifier (OTA) slew rate for cmos image sensor (CIS) is proposed. The slew rate is controlled by switching between various bias circuits for the OTA. The biasing circuit controls the value of OTA biased current, which allows controlling the amplifier's characteristics. As the flicker noise in the main contributor in reducing the quality of image sensors performance. The proposed circuit allows controlling noise effect by increasing the time of reading a pixel signal(OTA slew rate). For reducing the power consumption, the bias cell can be selected regarding the signal to noise ratio (SNR) value.

关键词： slew rate OTA CIS cmos image sensor controllable slew rate

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An ADC Test Technique With Dual-Path/Multi-Functional Fine Pattern Generator Realizing High Accuracy Measurement for cmos image sensor 29

An ADC Test Technique With Dual-Path/Multi-Functional Fine P...

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29th IEEE Asian Test Symposium (ATS)

作者： Morishita, Fukashi Otsuka, Masanori Saito, Wataru Renesas Elect Corp 20-1 Josuihon Cho5 Chome Kodaira Tokyo Japan

ISBN: (纸本)9781728174679

This paper proposes a novel circuit and technique for high accuracy measurement of analog-to-digital converters (ADCs) within a cmos image sensor (CIS) chip. The evaluation of such ADCs has been a big challenge because optical signal source for CIS input is difficult to manage and control. The test circuit provides a dual path, one for normal operation and the other for applying external electrical input signal directly to ADC. This test path also has an ability of multi-functional fine pattern generator that can define any input for each column to evaluate CIS specific characteristics. This test circuit and technique enables the measurement of ADC characteristics directly from CIS chip. Measured result shows INL of 15 LSB, crosstalk of 20 LSB and accelerated column interference of 5 LSB. These measured results agreed with the designed values. With this straightforward circuit and technique, we confirmed the measurement accuracy of 14-bit.

关键词： cmos image sensor column parallel ADC dual-path test external electrical input signal multi-functional fine pattern generator IP test

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cmos image sensor with off-center circular apertures for depth extraction

CMOS image sensor with off-center circular apertures for dep...

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Conference on image Sensing Technologies - Materials, Devices, Systems, and Applications VI

作者： Choi, Byoung-Soo Lee, Jimin Kim, Sang-Hwan Lee, Jewon Lee, Junwoo Chang, Seunghyuk Park, JongHo Lee, Sang-Jin Shin, Jang-Kyoo Kyungpook Natl Univ Sch Elect Engn 80 Daehak Ro Daegu 41566 South Korea Korea Adv Inst Sci & Technol Ctr Integrated Smart Sensors 291 Daehak Ro Daejeon 34141 South Korea

ISBN: (纸本)9781510626263

A cmos image sensor with off-center circular apertures for two-dimensional (2D) and three-dimensional (3D) imaging was fabricated, and its performance was evaluated, including the results of 2D and 3D images. The pixel size, based on a four-transistor active pixel sensor with a pinned photodiode, is 2.8 mu m x 2.8 mu m. Disparate images as well as focused images for depth calculation can be obtained using the designed pixel pattern. The pixel pattern is composed of one white subpixel with a left-offset circular aperture, a blue pixel, a red pixel, and another white subpixel with a right-offset circular aperture. The proposed technique was verified by simulation and measurement results using a point light source. In addition, the depth image was implemented by calculating the depth information from the 2D images.

关键词： cmos image sensor pixel circular aperture depth extraction

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Dynamic Capacitance Variations Due to Barrier Modulation in Pinned Photodiode of cmos image sensor

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2019年第12期66卷 5202-5208页

作者： Khan, Uzma Sarkar, Mukul IIT Delhi Elect Engn Dept New Delhi 110016 India

The pinned photodiode (PPD) capacitance is an important parameter in cmos image sensor design since it provides useful information on the charge handling capacity of the photodiode. The model of the dynamic capacitance of the PPD includes a fixed depletion capacitance and a variable diffusion capacitance. The variable component of the photodiode capacitance is estimated by measuring the feedforward voltage at the floating diffusion node. However, the estimated feedforward voltage is highly nonlinear at its full-well condition. In this article, the transfer gate (TG) channel potential is shown to be dependent on the number of charges integrated in the PPD. The nonlinear behavior of TG channel potential influences the effective potential barrier. The nonlinearity observed in the feedforward voltage is also explained using the nonlinear behavior of TG channel potential. In the literature, the influence of the effective potential barrier on the photodiode capacitance models is not taken into account. In this article, the influence of the effective potential barrier on the full-well capacity, feedforward effect, and PPD capacitance is studied. The improved photodiode capacitance model using the effective potential barrier is in good agreement with the measurement results.

关键词： Electric potential Photodiodes Capacitance Modulation Semiconductor device modeling Pins Semiconductor process modeling cmos image sensor feedforward effect full-well capacity (FWC) photodiode capacitance pinned photodiode (PPD) potential barrier

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