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Ionising radiation effects in a soft X-ray cmos image sensor

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 2024年 1059卷

作者： Townsend-Rose, Charles Buggey, Thomas Ivory, James Stefanov, Konstantin D. Holland, Andrew D. Open Univ Ctr Elect Imaging Walton Hall Milton Keynes MK7 6AA England

CIS221-X is a prototype monolithic cmos image sensor, optimised for soft X-ray astronomy and developed for the proposed ESA THESEUS mission. A significant advantage of cmos technology is its resistance to radiation damage. To assess this resistance, four backside-illuminated CIS221-X detectors have been irradiated up to a total ionising dose of 113 krad at the ESA ESTEC 60Co facility. Using unirradiated readout electronics, the performance of each sensor has been measured before and after irradiation. The gain, readout noise and dark current are shown to increase, while the image lag remains unchanged. These measurements are compared to that of similar cmos image sensors and a possible physical explanation is provided for each result.

关键词： cmos image sensor X-ray detectors Radiation damage Total ionising dose (TID)

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Charge Domain Interlace Scan Implementation in a cmos image sensor

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IEEE sensorS JOURNAL 2011年第11期11卷 2621-2627页

作者： Xu, Yang Mierop, Adri J. Theuwissen, Albert J. P. Delft Univ Technol Elect Instrumentat Lab NL-2628 CD Delft Netherlands DALSA Semicond NL-5656 AE Eindhoven Netherlands Harvest Imaging B-3960 Bree Belgium

This paper presents the first cmos image sensor which implements a charge domain interlacing principle to improve the signal-to-noise ratio (SNR) under equal exposure condition (integration time and light intensity). Inspired by the shared amplifier pixel structure, a novel pixel is designed to fit the charge domain interlacing principle, which works in field integration and frame integration mode. The designed image sensor is implemented in TSMC 0.18 mu m CIS technology. This cmos image sensor also contains a programmable universal image sensor peripheral circuit, allowing this sensor also to support normal progressive scan. By comparing the performances of the sensor working in charge domain interlacing and in the progressive scan, the chip measurement results prove that under the same exposure condition, the light response of the charge domain interlacing is twice that of the progressive scan. The SNR performance can be increased by 6 dB in low light level conditions.

关键词： Charge binning cmos image sensor interlace scan low light level imaging

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Attomolar detection of cytokines using a chemiluminescence immunoassay based on an antibody-arrayed cmos image sensor

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sensorS AND ACTUATORS B-CHEMICAL 2015年 221卷 1248-1255页

作者： Hong, Donggu Joung, Hyou-Arm Lee, Do Young Kim, Sanghyo Kim, Min-Gon Gwangju Inst Sci & Technol Sch Phys & Chem Gwangju 500712 South Korea Gwangju Inst Sci & Technol Adv Photon Res Inst Gwangju 500712 South Korea OPTOLANE Inc Songnam 463400 Gyeonggi Do South Korea Gachon Univ Dept Bionanotechnol Seognam Si 461701 Gyeonggi Do South Korea

A chemiluminescence immunoassay based on a cmos image sensor has been developed for simultaneous attomolar detection of cytokines. Attomolar level detection sensitivity is achieved through direct immobilization of antibodies on the surface of the cmos image sensor and using a simple data accumulation process with noise calibration after the sandwich immunoassay. Here, the proposed method was showed that the logarithmic linear range for interleukin-5 (IL-5) detection is from 1 fg mL(-1) to 20 ng ml(-1) and the limit of detection (LOD) is 0.074 fg mL(-1), corresponding to a concentration of 7 aM. The LOD represents ca. 1 x 10(5)-fold improvement compared with use of conventional ELISA. Furthermore, the multiple targets including IL-2, IL-4, IL-5, and IL-6 can be detected with simultaneous and low-cost manner on array type cmos image sensor, and we hope that this sensor system will be a powerful tool in biological studies. (C) 2015 Elsevier B.V. All rights reserved.

关键词： cmos image sensor Attomolar detection Cytokines Chemiluminescence Sandwich immunoassay

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On-chip biofluorescence imaging inside a brain tissue phantom using a cmos image sensor for in vivo brain imaging verification

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sensorS AND ACTUATORS B-CHEMICAL 2006年第1期119卷 262-274页

作者： Ng, David C. Tokuda, Takashi Yamamoto, Akio Matsuo, Masamichi Nunoshita, Masahiro Tamura, Hideki Ishikawa, Yasuyuki Shiosaka, Sadao Ohta, Jun Nara Inst Sci & Technol Grad Sch Mat Sci Nara 6300192 Japan Nara Inst Sci & Technol Grad Sch Biol Sci Nara 6300192 Japan

We have developed an on-chip biofluorescence imaging device by packaging a dedicated cmos image sensor using a simple technique. By using on-chip imaging configuration, we have verified in vivo fluorescence imaging inside a specially developed brain tissue phantom that closely resembles the mammalian brain. In order to implement on-chip imaging, an excitation light filter is applied onto the chip. A transmittance of -44 dB is achieved by multiple coating of the filter. On-chip measurement of the AMC fluorophore shows that detection of concentration of 1 mu M is possible. ne phantom medium has mechanical rigidity and optical property similar to the mouse brain. Feasibility of imaging the released fluorophore inside the phantom sample is demonstrated. It is shown that light scattering in the phantom medium does not reduce the image resolution considerably, if the imaging depth is kept below 500 mu m. The fully packaged chip, specially designed with this technique is about 350 mu m thick and 2.7 mm wide. The image sensor pixel size of 7.5 mu m x 7.5 mu m is close to the size of a single neuron cell. Although the device is designed specially for in vivo imaging of the mouse hippocampus to study its neuronal activity, a wide range of applications are foreseen in the biomedical and pharmaceutical field. (c) 2005 Elsevier B.V. All rights reserved.

关键词： cmos image sensor biofluorescence on-chip imaging in vivo brain tissue phantom

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A Low-Noise cmos image sensor With Digital Correlated Multiple Sampling

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2018年第1期65卷 84-94页

作者： Chen, Nan Zhong, Shengyou Zou, Mei Zhang, Jiqing Ji, Zhongshun Yao, Libin Kunming Inst Phys Kunming 650223 Yunnan Peoples R China

This paper presents a low noise cmos image sensor using conventional 3T active pixel with Nwell/Psub diode as photo detector. Both fixed pattern noise (FPN) and temporal noise are suppressed by the proposed digital correlated multiple sampling (DCMS) technology. FPN and temporal noise from pixel, buffer circuit, and column-parallel ADC are analyzed in detail, and the total noise with DCMS is derived. General expression of 1/f noise with correlated multiple sampling is given, illustrating impact of delay time in DCMS. Output noise of image sensor, frame rate, power, and area are affected by order and oversampling ratio of sigma-delta ADC, which are discussed for practical design. A prototype cmos image sensor with 800x600 pixel array and second-order incremental sigma-delta ADCs is implemented with the 0.35-mu m standard cmos process. Measurement results of the implemented image sensor show a column FPN of 0.009%, an input referred noise of 3.5 e(rms)(-), and a dynamic range of 84 dB with oversampling ratio of 255. This indicates that image sensor with low noise can be achieved by DCMS without the CIS process and column amplification.

关键词： cmos image sensor sigma-delta ADC low noise FPN digital correlated multiple sampling

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Non-ionizing radiation effects in a soft X-ray cmos image sensor

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JOURNAL OF ASTRONOMICAL TELESCOPES INSTRUMENTS AND SYSTEMS 2024年第3期10卷

作者： Townsend-Rose, Charles Buggey, Thomas W. Ivory, James M. Dazzazi, Imane Stefanov, Konstantin D. Hall, David J. Open Univ Ctr Elect Imaging Milton Keynes England

CIS221-X is a prototype monolithic complementary metal-oxide-semiconductor (cmos) image sensor, optimized for soft X-ray astronomy and developed for the proposed European Space Agency Transient High Energy Sky and Early Universe Surveyor (THESEUS) mission. One significant advantage of cmos technology is its resistance to radiation damage. To assess this resistance, three backside-illuminated CIS221-X detectors have been irradiated with 10 MeV protons using the MC40 Cyclotron Facility at the University of Birmingham, United Kingdom. Each detector received 1/2, 1, and 2 THESEUS end-of-life proton fluences (6.65x10(8) p+/cm(2)). One had already been exposed to ionizing radiation [up to 59.04 krad total ionizing dose (TID)] during a previous radiation campaign. Using unirradiated readout electronics, the electro-optical performance of each device has been measured before and after proton irradiation. No significant change was observed in the readout noise and image lag. An increase in mean dark current was recorded, as was an increase in the number of hot pixels. The degradation of CIS221-X performance due to non-ionizing radiation effects is similar to that of comparable cmos image sensors and has been attributed to an increase in the number of bulk silicon defects.

关键词： cmos image sensor soft X-ray astronomy X-ray detectors radiation damage total non-ionizing dose.

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LED and cmos image sensor based hemoglobin concentration measurement technique

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sensorS AND ACTUATORS B-CHEMICAL 2011年第1期157卷 103-109页

作者： Kim, Dong-Sik Choi, Jae-Hoon Nam, Myung-Hyun Yang, Ji-Woon Pak, James Jungho Seo, Sungkyu Korea Univ Sch Elect Engn Seoul 136713 South Korea Korea Univ Anam Hosp Seoul 136705 South Korea Korea Univ Elect & Informat Engn Dept Jochiwon 339700 South Korea

This paper presents a technique that can provide accurate hemoglobin concentration measurement within a simple, cost-effective and compact platform. It is based on a LED and cmos image sensor without using an environmentally harmful reagent and centrifugal process. The acquired standard curve and adequate image processing steps such as image calibration and noise suppression allow us to accurately estimate the hemoglobin concentration at an error rate of less than 2% for blind tests conducted with the 33 blood specimens of outpatients. The hemoglobin concentration measurement, one of the crucial part of the complete blood count (CBC) as well as the most commonly ordered test in clinical laboratory, within such a small, cheap and fast platform would be useful for wide applications in doctor's office and for applications in resource limited settings as a point-of-care testing tool. (C) 2011 Elsevier B.V. All rights reserved.

关键词： Hemoglobin concentration measurement LED cmos image sensor Spectrophotometry Blood analysis

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On Wide Dynamic Range Tone Mapping cmos image sensor

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SENSING AND IMAGING 2020年第1期21卷 1-17页

作者： Mughal, Waqas Choubey, Bhaskar Univ Southampton Southampton Hants England Univ Siegen Siegen Germany

The dynamic range of a natural scene often covers over 6 decades of intensity from bright to dark areas. Typical image sensors, however, have limited ability to capture this dynamic range available in nature. Even after designing specific wide dynamic range (WDR) image sensors, displaying them on conventional media with limited ability requires computationally complex tone mapping. This paper proposed a novel cmos pixel which can capture and perform tone mapping during data acquisition. The pixel requires a reference voltage to generate tone mapped response. A number of different reference signals are proposed and generated which can perform WDR operation. Nevertheless, fixed pattern noise (FPN) effects the performance of these pixel. A pixel model with simple parameter extraction procedure is described for a typical tone mapping operator. This model is then used to obtain a simple procedure for pixel calibration leading to reduced FPN. The new proposed pixel response is able to capture upto 6 decades of light intensity and reported FPN correction procedure produces 1% of FPN contrast error.

关键词： WDR sensor FPN cmos image sensor

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An Ultra-Low Power cmos image sensor with On-Chip Energy Harvesting and Power Management Capability

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sensorS 2015年第3期15卷 5531-5554页

作者： Cevik, Ismail Huang, Xiwei Yu, Hao Yan, Mei Ay, Suat U. Univ Idaho Dept Elect & Comp Engn Moscow ID 83844 USA Hangzhou Dianzi Univ Sch Elect & Informat Hangzhou 310018 Peoples R China Nanyang Technol Univ Elect & Elect Engn Dept Singapore 639798 Singapore

An ultra-low power cmos image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the cmos image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 mu m cmos process. Total power consumption of the imager is 6.53 mu W for a 96 x 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 W of power could be generated by the new EHI pixels. The PMS is capable of providing 3x the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

关键词： ultra-low power cmos image sensor energy harvesting power management MPPT

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Suppression of Spatial and Temporal Noise in a cmos image sensor

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IEEE sensorS JOURNAL 2020年第1期20卷 162-170页

作者： Xie, Shuang Theuwissen, Albert J. P. Delft Univ Technol Dept Microelect NL-2628 CD Delft Netherlands IMEC B-3001 Leuven Belgium Harvest Imaging B-3960 Bree Belgium

This paper presents methodologies for suppressing the spatial and the temporal noise in a cmos image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise can be suppressed. Meantime, it employs column-level oversampling delta-sigma ADCs to suppress temporal noise as well as to facilitate the realization of the thermal compensation of dark signal non-uniformity (DSNU). In addition, the image pixels are re-configured as temperature sensors with inaccuracies within +/- 0.65 degrees C, between -20 and 80 degrees C. If the dark current and its non-uniformities are caused by thermal gradients, the obtained in-pixel thermal information can be employed to compensate for the measured dark current by 95 % and DSNU, up to 13 %. All the column-level 13 bit 2nd-order incremental delta-sigma ADCs are measured with SNR around 65 dB and INL around 1.5 LSB, when tested with a -8 dB input signal and sampling at 2 MHz with an oversampling ratio (OSR) of 128, when the full scale voltage is 2 Vp-p. The 4T Pinned Photodiode (PPD) CIS is measured to have a temporal noise of 34 mu V rms (with an OSR of 128, or, an input referred temporal noise of 0.5 e(-) rms, with a conversion gain, CG, of 73 mu V/e(-)), a column gain FPN of 0.06%, a dynamic range (DR) of 92 dB (with OSR = 512), as well as a linearity of 1 %. It has a measured DSNU of 3.2 %, after the thermal compensation using the in-pixel temperature sensors, a dark current of 290 pA/cm(2) and 15 pA/cm(2), measured at 60 degrees C, before and after the thermal compensation, respectively.

关键词： cmos image sensor dark current DSNU delta-sigma ADC temperature sensor thermal compensation

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