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24th International Congress on High-Speed Photography and Photonics

作者： Tajima, K Komuro, T Ishikawa, M Univ Tokyo Grad Sch Engn Dept Math Engn & Informat Phys Bunkyo Ku Tokyo 1138656 Japan

ISBN: (纸本)0819438464

In this paper, we discuss the required specifications, APS (Active Pixel sensor) technology, and possible problems to be overcome with next-generation cmos image sensors for digital high-speed video photography. A custom-designed image sensor with parallel-readout, high-speed-operation and other functions, is needed to develop an advanced high-speed video camera, realizing higher frame rates and producing pictures of proper resolution. The cmos image sensor can be developed at lower cost than CCD sensors, and its peripheral circuits can be integrated on a single sensor chip. Table 1 describes specification and performance of one of the custom cmos image sensors currently in use for a digital high-speed video camera. This type of cmos sensor is also called as "Passive Pixel sensor". The pixel structure of this sensor is very simple, but it requires the Current-to-Voltage Converter (also called as Trans-Impedance amplifier or Pre-Amplifier). This is because the output signal current from the sensor is very small and needs to be amplified. [GRAPHICS] On the other hand, APS includes an amplifier for each pixel, which improves the Signal-to-Noise Ratio (SIN). We discuss the possibility of cmos image sensors with the APS structure for digital high-speed video cameras based on test chips. Test chips are fabricated by using 0.35um technology. In addition, we show some simulation results of cmos image sensors in terms of required specification and performance from the viewpoints of application, functionality, and circuit structure.

关键词： APS cmos image sensor high-speed video camera

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A nano-metallic-particles-based cmos image sensor for DNA detection

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Chinese Physics B 2012年第7期21卷 416-421页

作者：何进苏艳梅马玉涛陈沁王若楠叶韵马勇梁海浪 Micro&Nano Electronic Device and Integrated Technology Center School of Electronics Engineering and Computer SciencePeking University Peking University Shenzhen SOC Key Laboratory PKU-HKUST Shenzhen-Honggang InstitutionW303West TowerIER Bldg.Hi-Tech Industrial Park South

In this paper we report on a study of the cmos image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a cmos sensor chip fabricated using a standard 0.5 gm cmos process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.

关键词： cmos image sensor nano-metallic particles DNA detection 0.5 gm cmos process

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cmos image sensor noise reduction method for image signal processor in digital cameras and camera phones

CMOS image sensor noise reduction method for image signal pr...

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Conference on Digital Photography III

作者： Yoo, Youngjin Lee, SeongDeok Choe, Wonhee Kim, Chang-Yong SAIT Display & Image Proc Lab Mt 14-1 Gyeonggi Do 447712 South Korea

ISBN: (纸本)9780819466150

Digital images captured from cmos image sensors suffer Gaussian noise and impulsive noise. To efficiently reduce the noise in image Signal Processor (ISP), we analyze noise feature for imaging pipeline of ISP where noise reduction algorithm is performed. The Gaussian noise reduction and impulsive noise reduction method are proposed for proper ISP implementation in Bayer domain. The proposed method takes advantage of the analyzed noise feature to calculate noise reduction filter coefficients. Thus, noise is adaptively reduced according to the scene environment. Since noise is amplified and characteristic of noise varies while the image sensor signal undergoes several image processing steps, it is better to remove noise in earlier stage on imaging pipeline of ISP. Thus, noise reduction is carried out in Bayer domain on imaging pipeline of ISP. The method is tested on imaging pipeline of ISP and images captured from Samsung 2M cmos image sensor test module. The experimental results show that the proposed method removes noise while effectively preserves edges.

关键词： cmos image sensor noise image denoising digital camera camera phone

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Enhanced cmos image sensor by flexible 3D nanocone anti-reflection film

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Science Bulletin 2017年第2期62卷 130-135页

作者： Li Tian Xiaolei Luo Min Yin Dongdong Li Xinzhong Xue Hui Wang Shanghai Advanced Research Institute Chinese Academy of Sciences School of Environmental and Chemical Engineering Shanghai University

Complementary metal oxide semiconductor(cmos) image sensors(CIS) are being widely used in digital video cameras, web cameras, digital single lens reflex camera(DSLR), smart phones and so on, owing to their high level of integration, random accessibility, and low-power operation. It needs to be installed with the cover glass in practical applications to protect the sensor from damage, mechanical issues,and environmental conditions, which, however, limits the accuracy and usability of the sensor due to the reflection in the optical path from air-to-cover glass-to-air. In this work, the flexible 3D nanocone anti-reflection(AR) film with controlled aspect ratio was firstly employed to reduce the light reflection at air/cover glass/air interfaces by directly attaching onto the front and rear sides of the CIS cover *** both the front and rear sides of cover glass were coated by the AR film, the output image quality was found to be improved with external quantum efficiency increased by 7%, compared with that without AR film. The mean digital data value, root-mean-square contrast, and dynamic range are increased by45.14%, 38.61% and 57, respectively, for the output image with AR films. These results provide a novel and facile pathway to improve the CIS performance and also could be extended to rational design of other image sensors and optoelectronic devices.

关键词： cmos image sensor Nancone anti-reflection film Quantum efficiency Digital data value Root-mean-square contrast

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cmos image sensor Parameter Configuration Using LabVIEW 1

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International Conference on Intelligent Systems and Signal Processing (ISSP)

作者： Patel, Dhvani R. Shah, Brijesh N. Jasani, Karan Charotar Univ Sci & Technol Elect & Commun Engn Changa India Charotar Univ Sci & Technol Charusat Space Res & Technol Ctr Changa India

ISBN: (数字)9789811069772

ISBN: (纸本)9789811069772;9789811069765

Imaging identifiers (detectors) are the main components of optical equipment and space missions that have sensors placed on board committed to Earth perception (high-determination imaging, environment spectroscopy, etc.), solar system investigation (small-scale cameras, direction for self-governing vehicle, etc.) and universe perception (space telescope central planes, controlling sensors, etc.). UART-SPI interface is used for configuring the different parameters of image sensor which includes inserting the training pattern to sync LVDS (low-voltage differential signalling) receivers, setting the offset at the input of the ADC, inserting a pattern to generate a test pattern, enabling sequencer for image capture, image type selection settings like monochrome/grey image or colour image and many more. The image sensor has a number of LVDS high-speed outputs that transfer image data over longer distances. A special training mode enables the receiving system to synchronize the incoming data stream when switching to master, slave or triggered mode. A programmable offset and gain amplifier for each channel also is integrated by the image sensor. It requires only one master clock for operation up to 500 fps. The sensor is available in a monochrome version or Bayer (RGB)-patterned colour filter array.

关键词： cmos image sensor FPGA SPI UART LabVIEW

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cmos image sensor with organic photoconductive layer having narrow absorption band and proposal of stack type solid-state image sensors

CMOS image sensor with organic photoconductive layer having ...

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Conference on sensors, Cameras and Systems for Scientific/Industrial Applications VII

作者： Takada, S Ihama, M Inuiya, M Fuji Photo Film Co Ltd Res & Dev Management Headquarters 210 Nakanuma Minamiashigara Kanagawa 2500193 Japan

ISBN: (纸本)0819461083

Digital still cameras overtook film cameras in Japanese market in 2000 in terms of sales volume owing to their versatile functions. However, the image-capturing capabilities such as sensitivity and latitude of color films are still superior to those of digital image sensors. In this paper, we attribute the cause for the high performance of color films to their multi-layered structure, and propose the solid-state image sensors with stacked organic photoconductive layers having narrow absorption bands on cmos read-out circuits.

关键词： cmos image sensor organic photoconductive layer stack type solid-state image sensor

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cmos image sensor dedicated to speed determination of fast moving luminous objects

CMOS Image sensor dedicated to speed determination of fast m...

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Conference on sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications IV

作者： Bellach, B Lamalle, B Voon, LFCLY Cathebras, G Univ Bourgogne F-71200 Le Creusot France

ISBN: (纸本)0819448176

We present a cmos image sensor for speed determination of fast moving luminous objects. Our circuit furnishes a 16-gray level image that contains both spatial and temporal information on the fast moving object under observation. The spatial information is given by the coordinates of the illuminated pixels and the temporal information is coded in the gray level of the pixels. By applying simple image processing algorithms to the image, the trajectory, direction of motion and speed of the moving object can be determined. The circuit is designed and fabricated in standard cmos 0.6 mum process from Austria MicroSystems (AMS). The core of the circuit is an array of 64 x 64 pixels based on an original Digital Pixel sensor (DPS) architecture. Each pixel is composed of a photodiode as the light sensing element, a comparator, a pulse generator and a 4-bit static memory for storing the gray value of the pixel. The working principle of the circuit, its design and some quantitative experimental results are presented in the paper.

关键词： cmos image sensor image processing speed measurement

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Wide dynamic range cmos image sensor with in-pixel double-exposure and synthesis

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Journal of Semiconductors 2010年第5期31卷 73-77页

作者：李斌桥孙忠岩徐江涛 School of Electronics and Information Engineering Tianjin University

A wide-dynamic-range cmos image sensor（CIS） based on synthesis of a long-time and a short-time exposure signal in the floating diffusion（FD） of a five-transistor active pixel is *** optimized pixel operation,the response curve is compressed and a wide dynamic range image is obtained.A prototype wide-dynamic-range cmos image sensor was developed with a 0.18μm CIS *** the double exposure time 2.4 ms and 70 ns,the dynamic range of the proposed sensor is 80 dB with 30 frames per second（fps）.The proposed cmos image sensor meets the demands of applications in security surveillance systems.

关键词： cmos image sensor double exposure dynamic range five-transistor active pixel

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Adaptive Thresholding Scheme for Demodulation of Rolling-Shutter images Obtained in cmos image sensor Based Visible Light Communications

IEEE PHOTONICS JOURNAL

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IEEE PHOTONICS JOURNAL 2018年第6期10卷 1-6页

作者： Chow, Chi-Wai Liu, Yen-Chun Shiu, Ruei-Jie Yeh, Chien-Hung Natl Chiao Tung Univ Dept Photon Hsinchu 30010 Taiwan Natl Chiao Tung Univ Inst Electroopt Engn Hsinchu 30010 Taiwan Feng Chia Univ Dept Photon Taichung 40724 Taiwan

Light-emitting-diode transmitter and complementary-metal-oxide-semiconductor (cmos) image sensor receiver based visible light communication is a promising scheme for an optical wireless communication. During the demodulation of the rolling shutter pattern obtained from the cmos image sensor Rx, due to the high signal fluctuation introduced by the uneven light exposure, special thresholding schemes are needed to correctly identify the data logic. In this work, we propose and demonstrate a modified adaptive scheme (MQA) for the demodulation of the rolling shutter pattern. Experimental bit-errorratio (BER) measurements using different thresholding schemes at different illuminance are analyzed. The results show that the proposed MQA scheme can provide much lower BER, with similar process latencies when compared with other schemes.

关键词： Light emitting diode (LED) visible light communication (VLC) cmos image sensor

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A low-power high-quality cmos image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

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Journal of Semiconductors 2022年第8期43卷 53-59页

作者： Wenjing Xu Jie Chen Zhangqu Kuang Li Zhou Ming Chen Chengbin Zhang Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Will Semiconductor Co.Ltd. Shanghai 201210China

This paper presents a low-power high-quality cmos image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage ***-CDS is used to reduce random noise and the nonuniformity between ***-mode counting method is proposed to improve circuit robustness.A prototype sensor was fabricated using a 0.11μm cmos *** results show that the lag of the five-finger shaped pixel is reduced by 80%compared with the conventional rectangular pixel,the chip power consumption is only 36 mW,the dynamic range is 67.3 dB,the random noise is only 1.55 e^(-)_(rms),and the figure-of-merit is only 1.98 e^(-)·nJ,thus realizing low-power and high-quality imaging.

关键词： cmos image sensor 4T pinned photodiode single-slope ADC correlated double sample counting method

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