检索结果-内蒙古大学图书馆

A 151 dB High Dynamic Range cmos image sensor Chip Architecture With Tone Mapping Compression Embedded In-Pixel

IEEE sensorS JOURNAL 2015年第1期15卷 180-195页

作者： Vargas-Sierra, Sonia Linan-Cembrano, Gustavo Rodriguez-Vazquez, Angel CSIC IMSE CNM Seville 41092 Spain Univ Seville Seville 41092 Spain

This paper presents a high dynamic range cmos image sensor that implements an in-pixel content-aware adaptive global tone mapping algorithm during image capture operation. The histogram of the previous frame of an auxiliary image, which contains time stamp information, is employed as an estimation of the probability of illuminations impinging pixels at the present frame. The compression function of illuminations, namely tone mapping curve, is calculated using this histogram. A QCIF resolution proof-of-concept prototype has been fabricated using a 0.35 mu m opto-flavored standard technology. The sensor is capable of mapping scenes with a maximum intra-frame dynamic range of 151 dB (25 bits/pixel in linear representation) by compressing them to only 7 bits/pixel, while keeping visual quality in details and contrast. The in-pixel on-the-fly fully parallel tone mapping achieves high-frame rate allowing real-time high dynamic range video (120 dB at 30 frames/s).

关键词： cmos image sensor high dynamic range tone mapping pulse width modulation real-time HDR video

来源：评论

学校读者我要写书评

暂无评论

A high-speed, high-sensitivity digital cmos image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters

引用

IEEE JOURNAL OF SOLID-STATE CIRCUITS 2007年第4期42卷 766-774页

作者： Furuta, Masanori Nishikawa, Yukinari Kawahito, Shoji Shizuoka Univ Elect Res Inst Hamamatsu Shizuoka 4328011 Japan Shizuoka Univ Grad Sch Elect Sci & Technol Hamamatsu Shizuoka 4328011 Japan Photoron Ltd Tokyo 1020071 Japan

This paper presents a high-speed, high-sensitivity 512x512 cmos image sensor with column parallel cyclic 12-bit ADCs and a global electronic shutter. Each pixel has a charge amplifier for high charge-to-voltage conversion gain despite of using a large-size photodiode, and two sample-and-hold stages for the global shutter and fixed pattern noise (FPN) canceling. High-speed column-parallel cyclic ADC arrays with 12-bit resolution having a small layout size of 0.09 mm(2) are integrated at both sides of image array. A technique for accelerating the conversion speed using variable clocking and sampling capacitance is developed. A digital gain control function using 14-bit temporal digital code is also set in the column parallel ADC. The fabricated chip in 0.25-mu m cmos image sensor technology achieves the full frame rate in excess of 3500 frames/s. The in-pixel charge amplifier achieves the optical sensitivity of 19.9 V/lx (.) s. The signal full scale at the pixel output is 1.8 V at 3.3-V supply and the noise level is measured to be 1.8 mV(rms), and the resulting signal dynamic range is 60 dB.

关键词： cmos image sensor column-parallel cyclic A/D converter global electronic shutter high-sensitivity high-speed imaging in-pixel charge amplifier

来源：评论

学校读者我要写书评

暂无评论

Ultra-Low Power cmos image sensor With Two-Step Logical Shift Algorithm-Based Correlated Double Sampling Scheme

引用

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2020年第11期67卷 3718-3727页

作者： Park, Keunyeol Yeom, Seonwoo Kim, Soo Youn Dongguk Univ Dept Semicond Sci Seoul 04620 South Korea

This article presents an ultra-low power counter structure for a column-parallel single-slope analog-to-digital converter (SS-ADC) in cmos image sensors. The proposed counter employs a two-step logical shift algorithm-based correlated double sampling (CDS) scheme. The logical shift algorithm can reduce parasitic capacitances, driving frequency, and inner toggling nodes by using the minimum number of transistors and a single-direction counter structure. Moreover, the two-step counting and double data rate scheme in the LSB counter can halve the operating clock frequency, resulting in further decreased power consumption. A prototype sensor was fabricated using a 110 nm cmos image sensor process. The measurement results show that the proposed SS-ADC with a two-step counter consumes 2.4 mu W power per column and shows a differential nonlinearity of +0.38/-0.25 LSB and an integral nonlinearity of +0.75/-0.5 LSB. The total power consumption is 2.25 mW for 640 x 480 effective image resolution at 60 frame rates with 3.3 V/1.5 V supply voltage.

关键词： cmos image sensor low-power column counter logical shift algorithm correlated double sampling two-step counter double data rate

来源：评论

学校读者我要写书评

暂无评论

A novel pulse measurement system by using laser triangulation and a cmos image sensor

引用

sensorS 2007年第12期7卷 3366-3385页

作者： Wu, Jih-Huah Chang, Rong-Seng Jiang, Joe-Air Natl Taiwan Univ Dept Bioind Mechatron Engn Taipei 106 Taiwan Ming Chuan Univ Dept Biomed Engn Tao Yuan 333 Taiwan Natl Cent Univ Dept Opt & Photon Chungli 320 Taiwan

This paper presents a novel, non-invasive, non-contact system to measure pulse waveforms of artery via applying laser triangulation method to detect skin surface vibration. The proposed arterial pulsation measurement (APM) system chiefly consists of a laser diode and a low cost complementary metal-oxide semiconductor (cmos) image sensor. Laser triangulation and centroid method are combined with the Fast Fourier Transform (FFT) in this study. The shape and frequency of the arterial pulsation can be detected rapidly by using our APM system. The relative variation of the pulse at different measurement points near wrist joint is used as a prognostic guide in traditional Chinese medicine (TCM). An extensive series of experiments was conducted to evaluate the performance of the designed APM system. From experimental results, the pulse amplitude and frequency at the Chun point (related to the small intestine) of left hand showed an obvious increase after having food. In these cases, the peak to peak amplitudes and the frequencies of arterial pulsations range from 38 to 48 mu m and from 1.27 to 1.35 Hz, respectively. The height of arterial pulsations on the area near wrist joint can be estimated with a resolution of better than 4 mu m. This research demonstrates that applying a cmos image sensor in designing a non-contact, portable, easy-to-use, low cost pulse measurement system is feasible. Also, the designed APM system is well suited for evaluating and pre-diagnosing the health of a human being in TCM clinical practice.

关键词： arterial pulsation centroid method cmos image sensor laser triangulation pulse frequency

来源：评论

学校读者我要写书评

暂无评论

8.3 M-Pixel 480-fps Global-Shutter cmos image sensor with Gain-Adaptive Column ADCs and Chip-on-Chip Stacked Integration

引用

IEEE JOURNAL OF SOLID-STATE CIRCUITS 2017年第4期52卷 985-993页

作者： Oike, Yusuke Akiyama, Kentaro Hung, Luong D. Niitsuma, Wataru Kato, Akihiko Sato, Mamoru Kato, Yuri Nakamura, Wataru Shiroshita, Hiroshi Sakano, Yorito Kitano, Yoshiaki Nakamura, Takuya Toyama, Takayuki Iwamoto, Hayato Ezaki, Takayuki Sony Semicond Solut Atsugi Kanagawa 2430014 Japan Sony Semicond Mfg Kumamoto 8691102 Japan

This paper presents a 4K2K 480-fps global-shutter cmos image sensor with a super 35-mm format for a highly realistic digital video system. The sensor employs newly developed gain-adaptive column analog-to-digital converters to obtain input-referred dark random noise of 140 mu Vrms for an inputreferred full-scale readout of 923 mV. An on-chip online correction of the error between two switchable gains maintained the nonlinearity of the output image within 0.18%. A chip-onchip integration process realized a front-illuminated image sensor stacked with two diced logic chips through 38-K microbump interconnections. The global-shutter pixel achieved a parasitic light sensitivity of -99.6 dB. The 16-channel output interfaces with 4.752 Gbps/ch were implemented in the stacked logic chips.

关键词： Analog-to-digital converter (ADC) chip-on-chip stacked device cmos image sensor global shutter high frame rate low noise

来源：评论

学校读者我要写书评

暂无评论

An Adaptive Integration Time cmos image sensor With Multiple Readout Channels

引用

IEEE sensorS JOURNAL 2013年第12期13卷 4931-4939页

作者： Qian, Xinyuan Yu, Hang Chen, Shoushun Low, Kay Soon Nanyang Technol Univ Sch Elect & Elect Engn VIRTUS IC Design Ctr Excellence Singapore 639798 Singapore Nanyang Technol Univ Sch Elect & Elect Engn Satellite Res Ctr Singapore 639798 Singapore

In this paper, we present an adaptive integration time cmos image sensor with multiple readout channels for star tracker application. The sensor architecture allows each pixel to have an adaptive integration time. Through cyclically selecting a row of pixels and checking the integration voltage of each pixel, brighter pixels can be marked and readout first. Those dimmer pixels will continue integration until their voltage fall into a window defined by two threshold voltages. Each pixel only consists of five transistors. To improve the readout throughput and hence to reduce the rolling time, a multiple readout channel architecture is proposed. A proof-of-concept 320 x 128-pixel image sensor was implemented using Global Foundries 0.18 mu m mixed-signal cmos process.

关键词： cmos image sensor adaptive integration time multiple readout channels high dynamic range (HDR) wide dynamic range (WDR) star tracker

来源：评论

学校读者我要写书评

暂无评论

Overview of cmos image sensor use in molecular diagnostics

引用

CURRENT APPLIED PHYSICS 2015年第3期15卷 402-411页

作者： Devadhasan, Jasmine Pramila Yoo, In Sang Kim, Sanghyo Gachon Univ Dept Bionanotechnol Songnam 461701 South Korea Gachon Univ Dept Chem & Biochem Engn Songnam 461701 South Korea Gachon Med Res Inst Gil Med Ctr Inchon 405760 South Korea

cmos sensors comprise an important tool in bioscientific applications. This review focuses on cmos sensor-based molecular diagnostics of DNA, protein, and metabolic molecules. Herein, gene sequencing, DNA-DNA hybridization, single nucleotide polymorphisms (SNP), protein interactions, peptide interactions, antigen-antibody (Ag-Ab) interactions, as well as glucose and cholesterol monitoring using cmos sensors are discussed along with existing experimental outcomes. cmos sensor based electrochemical, optical, impedance, dual, continuous, and label-free analysis and their related integration techniques are explained. Moreover, we describe the utilization of a cmos chip in microarray fabrication, assay platform development, and transducer incorporation for molecular diagnostics. Furthermore, cmos sensor-based point-of-care (POC) applications, other biological analyses, and the role of nanoparticles in biomolecular sensing are discussed. Future directions include information about the novel integration of cmos sensor-based molecular diagnostic devices with a central focus towards enhancement of POC approaches. This review is helpful in creating highly sensitive, cheaper, and user-friendly biomedical devices with modern dimensions. (C) 2015 Elsevier B.V. All rights reserved.

关键词： cmos image sensor Molecular diagnostics Point-of-care diagnosis Biochemical detection Biochip Nanoparticles

来源：评论

学校读者我要写书评

暂无评论

A 240-frames/s 2.1-Mpixel cmos image sensor With Column-Shared Cyclic ADCs

引用

IEEE JOURNAL OF SOLID-STATE CIRCUITS 2011年第9期46卷 2073-2083页

作者： Lim, Seunghyun Cheon, Jimin Chae, Youngcheol Jung, Wunki Lee, Dong-Hun Kwon, Minho Yoo, Kwisung Ham, Seogheon Han, Gunhee Samsung Elect Co CMOS Image Sensor Dev Team Yongin 446711 Gyeonggi Do South Korea Yonsei Univ Dept Elect & Elect Engn Seoul 120749 South Korea Samsung Elect Co Image Dev Team Yongin 446711 Gyeonggi Do South Korea

This paper proposes a low-power 240 frames/s 2.1 M-pixel cmos image sensor with column-shared cyclic (CY) ADCs. Two-column shared CY-ADC architecture and two-level stacked ADC placement are employed for low-power and small pixel pitch design. The proposed CY-ADC uses only one OTA and four capacitors. Distributed clocking scheme using cascaded repeaters is proposed to reduce the required peak current. The prototype sensor was fabricated in a 0.13-mu m 1P4M process with pixel pitch of 2.25 mu m. The designed 10-bit ADC dissipates only 90 mu W/channel with 1.5 V supply. The measured DNL and INL are +0.59/-0.83 LSB and +2.8/-3.6 LSB, respectively. The measured maximum pixel rate is 500 Mpixels/s with total power consumption of 300 mW.

关键词： cmos image sensor column-parallel ADC cyclic ADC single-slope conversion successive approximation

来源：评论

学校读者我要写书评

暂无评论

A 1.25-inch 60-frames/s 8.3-M-pixel digital-output cmos image sensor

引用

IEEE JOURNAL OF SOLID-STATE CIRCUITS 2005年第11期40卷 2305-2314页

作者： Takayanagi, I Shirakawa, M Mitani, K Sugawara, M Iversen, S Moholt, J Nakamura, J Fossum, ER Micron Japan Ltd Japan Imaging Design Ctr Tokyo 1448721 Japan NHK Sci & Tech Labs Setagaya Ku Tokyo 1758510 Japan Micron Europe Ltd NO-0349 Oslo Norway Univ So Calif Dept Elect Engn Los Angeles CA 90089 USA

The ultrahigh-definition television (UDTV) camera system requires an image sensor having four times higher resolution and two times higher frame rate than the conventional HDTV systems. Also, an image sensor with a small optical format and low power consumption is required for practical UDTV camera systems. To respond to these requirements, we have developed an 8.3-M-pixel digital-output cmos active pixel sensor (APS) for the UDTV application. It features an optical format of 1.25 inch, low power consumption of less than 600 mW at dark, while reproducing a low-noise, 60-frames/s progressive scan image. The image sensor is equipped with 1920 on-chip 10-bit analog-to-digital converters and outputs digital data stream through 16 parallel output ports. Design considerations to reproduce a low-noise, high-resolution image at high frame rate of 60 fps are described. Implementation and experimental results of the 8.3-M-pixel cmos APS are presented.

关键词： active pixel sensor cmos image sensor HDTV parallel architecture

来源：评论

学校读者我要写书评

暂无评论

Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-cmos image sensor

引用

IEEE sensorS JOURNAL 2024年第16期24卷 25652-25661页

作者： Alj, Antoine Salih Touron, Pierre Roy, Francois Tournier, Arnaud Michelot, Julien Demiguel, Stephane Virmontois, Cedric Lalucaa, Valerian Magnan, Pierre Goiffon, Vincent ISAE SUPAERO F-31400 Toulouse France Ctr Natl Etud Spatiales CNES F-31400 Toulouse France Thales Alenia Space F-06150 Cannes France STMicroelectronics F-38920 Crolles France

The charge-coupled device (CCD) is an essential image sensor for spaceborne scientific applications, high-resolution Earth observation, and low-light imaging due its charge transfer feature yielding intrinsically a high dynamic range. To create a high-performance image sensor that can integrate with cmos technology, a new design of CCDs using advanced cmos manufacturing has been developed. In this article, a charge domain fully depleted CCD-on-cmos image sensor built with capacitive deep trench isolation (CDTI) is described and characterized. Dark current and clock-induced charges (CICs) are investigated through their dependence on operational parameters, such as biasing, clocking, and temperature. The contributions of each charge generation source are separated, identified, and quantified to provide an accurate depiction of the device behavior in multipinned phase (MPP) charge transfer mode. In the light of the physical phenomena at play, involving interface state charge generation and impact ionization, an optimization on the device's clocking is proposed as the best trade-off on CICs and dark current. Perspectives aiming at further enlarging the applicative field of this image sensor are discussed.

关键词： Dark current Charge transfer Logic gates image sensors sensors Passivation Charge coupled devices Capacitive deep trench isolation (CDTI) CCD-on-cmos charge-coupled device (CCD) clock-induced charges (CICs) cmos image sensor dark current multipinned phase (MPP)

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：