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A 2.03-mW cmos image sensor With an Integrated Four-Stacked Charge-Recycling Driver for image Signal Transmission

IEEE ACCESS 2022年 10卷 99553-99561页

作者： Kim, Sang-Noon Cho, Yongsung Lee, Jiwon Chun, Jung-Noon Choi, Jaehyuk Sungkyunkwan Univ Coll Informat & Commun Engn Suwon 16419 South Korea IMEC B-3001 Leuven Belgium Hanyang Univ Dept Photon & Nanoelect Ansan 15888 South Korea SolidVue Inc Suwon 16419 South Korea

We propose a cmos image sensor with a dedicated low-power imaging mode and low-power integrated transmitter. The proposed cmos image sensor selectively operates in dual mode: a high-quality mode with a 1.5 V supply voltage of readout circuits to achieve a high signal-to-noise ratio (SNR), and a low-power mode with a 0.9 V supply voltage to support always-on imaging. To further reduce the power consumption in the low-power mode, a single-slope analog to digital converter (ADC) embeds a power cutoff scheme in the comparator and a two-step conversion with dual reference voltages. To alleviate the SNR degradation in the low-power mode, which inherently occurs from voltage scaling, a correlated multiple sampling technique that consumes negligible power overhead is implemented using the proposed window-counting scheme. To reduce the significant power consumption that occurs during image signal transmission, an integrated transmitter with four-stacked charge-recycling drivers is used so that four symbols are simultaneously transmitted with a shared supply voltage. A prototype cmos image sensor with 680 x 520 pixels is fabricated using 110-nm cmos image sensor technology. The fabricated cmos image sensor consumes only 301 mu W (at 15 fps) in the sensor core and 2.03 mW including the transmitter and phase locked loop (PLL) while generating low temporal random noise under 0.27 LSB with correlated multiple sampling.

关键词： cmos image sensor correlated-multiple-sampling (CMS) dual-mode low-power power reduction techniques

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Ultraviolet cmos image sensor for environment analysis via energy-down-shift mechanism of blue-light emitting quantum dots

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JOURNAL OF THE KOREAN PHYSICAL SOCIETY 2024年第6期85卷 482-489页

作者： Jeong, Ui-Hyun Park, Jea-Gun Hanyang Univ Dept Elect Engn Seoul 04763 South Korea

Recently, there has been a global societal focus on the management of air pollution. Measurements of air pollution are conducted using various methods depending on the pollutants, including ultraviolet (UV) absorption methods for ozone (O3) and fluorescence methods for sulfur dioxide (SO2). However, the conventional silicon-based complementary metal-oxide-semiconductor image sensor (Si-CIS) is not suitable for UV measurements due to the low quantum efficiency (QE) of silicon for UV light. Consequently, different types of detection sensors are used for different air pollutants, leading to limitations in measurement locations and resulting in errors depending on the installation position. To address these limitations, we propose a quantum dot complementary metal-oxide-semiconductor image sensor (QD-CIS) capable of imaging UV light using the energy-down-shift (EDS) mechanism of quantum dots (QDs). The synthesized QDs absorb light at UV wavelengths, convert it into visible blue light through EDS, and emit luminescence. The converted intensity allows the detection of UV intensity by the CIS. Through the designed QD-CIS and UV LED illumination, we measured the sensitivity to changes in the concentrations of the representative air pollutants NO2 and SO2. The results showed a sensitivity increase of 6.83 times for NO2 and 21.39 times for SO2 compared to conventional CIS. This suggests the potential of UV imaging to overcome these limitations using existing CIS components.

关键词： Quantum dot cmos image sensor Ultraviolet

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A 65 nm 0.5 V DPS cmos image sensor With 17 pJ/*** and 42 dB Dynamic Range for Ultra-Low-Power So Cs

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IEEE JOURNAL OF SOLID-STATE CIRCUITS 2015年第10期50卷 2419-2430页

作者： Couniot, Numa de Streel, Guerric Botman, Francois Lusala, Angelo Kuti Flandre, Denis Bol, David Catholic Univ Louvain ICTEAM Inst B-1348 Louvain La Neuve Belgium ARM Cambridge CB1 9NJ England Synergia Med B-1435 Mont St Guibert Belgium

Adding vision capabilities to wireless sensors nodes (WSN) for the Internet-of-Things requires imagers working at ultra-low power (ULP) in nanometer cmos systems-on-chip (SoCs). Such performance can be obtained with time-based digital pixel sensors (DPS) working at ultra-low voltage (ULV), at the expense of lower dynamic range, higher fixed-pattern noise (FPN) and thus poorer image quality. To address this problem, three key techniques were developed in this work for DPS pixels: wide-range adaptive body biasing, low-R-on gating of the 2-transistor in-pixel comparator and digital readout performing delta-reset sampling with low switching activity and robust timing closure. These concepts were demonstrated by designing and fabricating a 128 X 128 cmos image sensor array in a 65 nm low-power cmos logic process. Operating at 0.5 V, it features an FPN of 0.66%, a dynamic range of 42 dB and a fill factor of 57% with a 4 gm pixel pitch, while consuming only 17 pJ/(***) and 8.8 !LW at 32 fps. These performances combined with the small silicon area of 0.69 mm(2) makes the imager perfectly suitable for integration in ULP SoCs, targeting WSN applications.

关键词： cmos image sensor ultra-low power ultra-low voltage system-on-chip

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Dynamic Capacitance Variations Due to Barrier Modulation in Pinned Photodiode of cmos image sensor

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2019年第12期66卷 5202-5208页

作者： Khan, Uzma Sarkar, Mukul IIT Delhi Elect Engn Dept New Delhi 110016 India

The pinned photodiode (PPD) capacitance is an important parameter in cmos image sensor design since it provides useful information on the charge handling capacity of the photodiode. The model of the dynamic capacitance of the PPD includes a fixed depletion capacitance and a variable diffusion capacitance. The variable component of the photodiode capacitance is estimated by measuring the feedforward voltage at the floating diffusion node. However, the estimated feedforward voltage is highly nonlinear at its full-well condition. In this article, the transfer gate (TG) channel potential is shown to be dependent on the number of charges integrated in the PPD. The nonlinear behavior of TG channel potential influences the effective potential barrier. The nonlinearity observed in the feedforward voltage is also explained using the nonlinear behavior of TG channel potential. In the literature, the influence of the effective potential barrier on the photodiode capacitance models is not taken into account. In this article, the influence of the effective potential barrier on the full-well capacity, feedforward effect, and PPD capacitance is studied. The improved photodiode capacitance model using the effective potential barrier is in good agreement with the measurement results.

关键词： Electric potential Photodiodes Capacitance Modulation Semiconductor device modeling Pins Semiconductor process modeling cmos image sensor feedforward effect full-well capacity (FWC) photodiode capacitance pinned photodiode (PPD) potential barrier

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Design of a hand-held automatic focus digital microscope by using cmos image sensor

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MEASUREMENT 2015年 70卷 88-99页

作者： Chiang, Chen-Sung Huang, Ke-Nung Li, Yan-Chay Luo, Ching-Hsing Natl Cheng Kung Univ Dept Elect Engn Tainan 701 Taiwan I Shou Univ Dept Elect Engn Kaohsiung 840 Taiwan MicroLinks Technol Corp Kaohsiung 840 Taiwan

The purpose of this paper was to realize a hand-held, auto-focus digital microscope system in order to observe and record microscopic images. Based on the Gauss optical theorem, we designed the algorithm and implemented it into the proposed digital microscope system. Compared with conventional optical microscopes, our digital microscope system significantly reduces the volume to only 40 mm x 35 mm x 105 mm, and achieves hand-held convenience. In order to increase the stability and convenience of the usage, we apply the discrete cosine transform (DCT) method and MathWorks MATLAB to realize the automatic focus function - it takes only 4 s for the system to complete a single time auto-focus. Therefore, in addition to the advantages of small size, low price and high convenience, our system has much room for further development and usage in medical, scientific and industrial fields in the near future. (C) 2015 Elsevier Ltd. All rights reserved.

关键词： Digital microscope Discrete cosine transform Automatic focus cmos image sensor

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Design and Evaluation of a cmos image sensor with Dual-CDS and Column-parallel SS-ADCs

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JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 2017年第1期17卷 110-119页

作者： Um, Bu-Yong Kim, Jong-Ryul Kim, Sang-Hoon Lee, Jae-Hoon Cheon, Jimin Choi, Jaehyuk Chun, Jung-Hoon Sungkyunkwan Univ Coll Informat & Commun Engn Suwon South Korea Kumoh Natl Inst Technol Sch Elect Engn Gumi South Korea

This paper describes a cmos image sensor (CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a fieldprogrammable gate array (FPGA) integrated module. The CIS is composed of a 320 x 240 pixel array with 3.2 mu m x 3.2 mu m pixels and column-parallel 10-bit single-slope ADCs. It is fabricated in a 0.11-mu m CIS process, and consumes 49.2 mW from 1.5 V and 3.3 V power supplies while operating at 6.25 MHz. The measured dynamic range is 53.72 dB, and the total and column fixed pattern noise in a dark condition are 0.10% and 0.029%. The maximum integral nonlinearity and the differential nonlinearity of the ADC are +1.15 / -1.74 LSB and + 0.63 / -0.56 LSB, respectively.

关键词： cmos image sensor CIS dual CDS single-slope ADC fixed pattern noise

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A Column-Parallel Inverter-Based Cyclic ADC for cmos image sensor With Capacitance and Clock Scaling

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2016年第1期63卷 162-167页

作者： Tang, Fang Wang, Bo Bermak, Amine Zhou, Xichuan Hu, Shengdong He, Xiaoyong Chongqing Univ Coll Commun Engn Chongqing 400044 Peoples R China Hong Kong Univ Sci & Technol Dept Elect & Commun Engn Hong Kong Hong Kong Peoples R China S China Univ Technol Guangzhou 510641 Guangdong Peoples R China

This paper presents a low-power column-parallel inverter-based cyclic analog-to-digital converter (ADC) for cmos image sensor readout circuit. By partially floating the capacitors inside the multiply digital-analog-converter during the least significant bit (LSB) quantization, the amplifier load capacitance could be significantly scaled down, which allows much higher settling speed and shorter cycle period. Since the signal-to-noise ratio for LSB cycle is relaxed due to the residual amplification, the proposed capacitance scaling only contributes ignorable input-referred quantization noise. Using the proposed techniques, a cyclic ADC can operate under 50% power consumption without suffering conversion rate, noise performance, and linearity. A 12-b quantization resolution test chip is fabricated using the TSMC 0.18-mu m technology with 110 column-parallel ADC channels and 10.08-mu m x 750-mu m column pitch. The 3.5/-2 LSBs integral nonlinearity and 10.1-b effective-number-of-bit are measured under 2-mu s sampling rate with 120-mu W power consumption per channel.

关键词： cmos image sensor column-parallel circuit cyclic analog-to-digital converter (ADC) low power mixed signal

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Prediction of cmos image sensor Dark Current Distribution and Noise in a Space Radiation Environment

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE 2013年第3期60卷 2280-2287页

作者： Martin, Emma Gilard, Olivier Nuns, Thierry David, Jean-Pierre Virmontois, Cedric French Space Agcy CNES F-31401 Toulouse 4 France ONERA DESP F-31055 Toulouse 4 France

Commercial off-the-shelf cmos image sensors were irradiated with protons at energies ranging from 30 MeV to 185 MeV. The irradiation-induced dark current increase and its distribution are studied. An empirical prediction method is used to assess the increase of both mean dark current and associated non-uniformity after a mono-energetic proton irradiation. The results are found to be in good agreement with the experimental measurements. The model also proved to be well adapted to predict dark current increase distributions for a device exposed to a multi-energetic proton beam. The impact of this dark current enhancement on the radiometric performance of the sensor is also discussed.

关键词： cmos image sensor dark current dark current non-uniformity radiation effect signal-to-noise ratio

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A cmos image sensor with light-controlled oscillating pixels for an investigative optobionic retinal prosthesis system

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MICROELECTRONICS JOURNAL 2009年第8期40卷 1202-1211页

作者： Huang, Yan Drakakis, Emmanuel M. Degenaar, Patrick Toumazou, Chris Univ London Imperial Coll Sci Technol & Med Dept Bioengn London SW7 2AZ England Univ London Imperial Coll Sci Technol & Med Inst Biomed Engn London SW7 2AZ England

This paper presents a high-dynamic range cmos image sensor architecture incorporating light-controlled oscillating pixels which can act as front-end for an investigative optobionic retinal prosthesis research effort. Each pixel acts as an independent oscillator, whose frequency is proportional to the local light intensity. A 9 x 9 pixel array has been fabricated in the AMS 0.35 mu m cmos opto process. Each pixel's area amounts to 160 x 160 mu m(2), each pixel photodiode area is 20 x 20 mu m(2) while the array occupies 2.89 mm(2). Measured results show that the sensor can achieve a linear optical dynamic range of 80 dB (from 0.24 Hz to 2.2 kHz). Its linear electrical dynamic range exceeds 134 dB (from 100 mHz to 502 kHz). The nominal power dissipation is about 50 nW per pixel. (C) 2009 Elsevier Ltd. All rights reserved.

关键词： cmos image sensor Low power High dynamic range Light-to-frequency conversion Oscillating pixel

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All-dielectric metasurface-based color filter in cmos image sensor

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OPTICS COMMUNICATIONS 2023年第1期540卷

作者： Wang, Bozhi Xu, Yijing Wu, Zhipeng Zhang, Zhiqing Wang, Qilong Southeast Univ Sch Elect Sci & Engn Nanjing 210096 Peoples R China

The development of all-dielectric metasurfaces vigorously prompts the applications of optical metasurfaces for a cmos (Complementary Metal-oxide-semiconductor) image sensor. Dielectric nanostructures, due to their resonant behavior and its tunability, offer the possibility to be assembled into flexible and miniature spectral filters, which could potentially replace conventional pigmented and dye-based color filters. In this paper, a transmission filter based on a GMR (Guided Mode Resonance) mode of all-dielectric metasurface is adopted as an example to study the effect of application scenario of integrated cmos image sensor chip and manufacturing mistakes, such as the small size of pixel, special dielectric environment around, surface roughness and structural defects. Numerical calculations based on the FDTD (finite difference time domain) method are used to study the relationship between the robustness of the metasurfaces and the optical resonant modes. More important, a method simplifying different manufacturing mistakes as basic geometry structure during the FDTD simulation is also proposed and demonstrated. This work deepens our understanding of the working mechanism of all-dielectric metasurfaces and paves the way for their use in cmos image sensor.

关键词： Guided mode resonance cmos image sensor Transmission color filter Manufacturing defects

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