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检索条件"主题词=Computer aided logic design"
380 条 记 录,以下是1-10 订阅
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computer aided design perspective of advanced logic design
Computer aided design perspective of advanced logic design
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39th Midwest Symposium on Circuits and Systems
作者: Mourad, S Santa Clara Univ Santa Clara United States
This paper describes a novel approach to teaching an advanced logic design course at the undergraduate level. The emphasis is on the use of different CAD tools as 1) a vehicle to accelerate the student learning, 2) a ... 详细信息
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Hierarchical Reaction logic Enables Computational design of Complex Peptide Syntheses
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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 2025年 第9期147卷 7644-7662页
作者: Molga, Karol Beker, Wiktor Roszak, Rafal Czerwinski, Andrzej Grzybowski, Bartosz A. Allchemy Inc Highland IN 46322 USA Polish Acad Sci Inst Organ Chem PL-01224 Warsaw Poland IBS Ctr Algorithm & Robotized Synth CARS Ulsan 689798 South Korea UNIST Dept Chem Ulsan 689798 South Korea
The prevalent assumption in computer-assisted synthesis planning has been to rely on the wealth of reaction data and on the consideration of this vast knowledge base at every stage of route planning. Yet even if equip... 详细信息
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Weight-Based Bose–Lin Codes in Concurrent Error-Detection Circuit Based on Boolean Signal Correction
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Journal of computer and Systems Sciences International 2025年 第1期64卷 17-35页
作者: Yelina, Y.I. Efanov, D.V. Peter the Great St. Petersburg Polytechnic University St. Petersburg195251 Russia Russian University of Transport Moscow127994 Russia
This paper explores the possibilities of using weight-based Bose–Lin codes in the synthesis of a concurrent error-detection circuit based on Boolean signal correction. The dependencies of the number of weighting opti... 详细信息
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Compact Analytical Model for a Raised Buried Oxide Ferroelectric TFET for RF/Analog Applications and Its Implementation as an Inverter
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Journal of Electronic Materials 2025年 1-18页
作者: Meriga, Sirisha Chowdary, M. Kalpana Bhowmick, Brinda Ganesh, C. Kota, Venkata Ramarao Chalapathi Institute of Engineering and Technology Guntur India BVRIT Hyderabad College of Engineering for Women Hyderabad India National Institute of Technology Silchar Silchar India Sri Eshwar College of Engineering Coimbatore Coimbatore India
In this paper, an inventive analytical modeling of drain current for the silicon-on-insulator (SOI)-raised buried oxide (RBOX) ferroelectric gate (Fe) tunnel field-effect transistor (TFET) laid on the tunneling window... 详细信息
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Large Language Models for EDA: From Assistants to Agents
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FOUNDATIONS AND TRENDS IN ELECTRONIC design AUTOMATION 2025年 第4期14卷 295-314页
作者: He, Zhuolun Pu, Yuan Wu, Haoyuan Qin, Yuhan Qiu, Tairu Yu, Bei Chinese Univ Hong Kong Hong Kong Peoples R China ChatEDA Tech Hong Kong Peoples R China
This survey explores the application of Large Language Models (LLMs) in Electronic design Automation (EDA), covering their roles as both assistants and autonomous agents. We review current research and practical imple... 详细信息
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A Hierarchical Multilevel Modeling Framework for the Creation of High-Quality Solid Models in Parametric Feature-Based CAD Systems
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computer-aided design and Applications 2025年 第2期22卷 229-244页
作者: Company, Pedro Contero, Manuel Camba, Jorge D. Aranburu, Aritz Justel, Daniel Universitat Jaume I Spain Universitat Politècnica de València Spain Purdue University United States Mondragon Unibertsitatea Spain
Building on the premise that quality is a complex and multifaceted concept, we advocate for the structuring of the concept of quality in engineering design parametric CAD modeling by using three hierarchical levels. T... 详细信息
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2024 ICCAD CAD Contest Problem B: Power and Timing Optimization Using Multibit Flip-Flop  24
2024 ICCAD CAD Contest Problem B: Power and Timing Optimizat...
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43rd International Conference on computer-aided design, ICCAD 2024
作者: Yang, Sheng-Wei Hsu, Jhih-Wei Li, Ting Wei Chen, Tzu-Hsuan Shen, Chin-Fang Cindy Synopsys Inc. No. 25 Industry East Road IV Science-Based Industrial Park Hsinchu Taiwan
In modern designs, timing performance, power, and area constraints (PPA) are the three major metrics for physical design. 2024 ICCAD CAD Contest Problem B investigates the optimization of power, area, and timing in mo... 详细信息
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Practical PCB design Considerations for GaN HEMTs Based Isolated DC-DC Converter  14
Practical PCB Design Considerations for GaN HEMTs Based Isol...
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14th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2025
作者: Gauttam, Gaureej Krishnamoorthy, S. Pasupuleti, Sai Sushma University of Houston Houston United States
This paper proposes improved PCB design techniques for converters using Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). An isolated DC-DC converter designed for high-temperature (>150 °C) appli... 详细信息
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On the Implementation of Capacitance Models in Electronic computer-aided design Tools
On the Implementation of Capacitance Models in Electronic Co...
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2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025
作者: Angelov, Iltcho Fager, Christian Rorsman, Niklas Chalmers University of Technology Microwave Electronics Laboratory Department of Microtechnology and Nanoscience Göteborg Sweden
Different types of CAD capacitance implementation procedures are discussed: Capacitance, Charge, Total charge, and Charge-Current. The last two models are now implemented and available in commercial CAD tools ADS and ... 详细信息
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Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well
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Microelectronics Journal 2025年 161卷
作者: Li, Qingkun Zhang, Qingzhu Cao, Lei Li, Lianlian Zhang, Xuexiang Niu, Chuqiao Sang, Guanqiao Bao, Yunjiao Yin, Huaxiang Wu, Zhenhua State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of the Chinese Academy of Sciences China School of Integrated Circuits University of Chinese Academy of Sciences China School of Physics Zhejiang University Hangzhou310000 China
This paper systematically investigates the super steep retrograde well (SSRW) scheme to improve performance and optimize short-channel effects (SCEs) in vertically stacked multi-nanosheet field-effect transistors (NSF... 详细信息
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