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Optimization of defect detection sensitivity and cost of ownership reduction in nano imprint lithography through design for inspection and advanced optical inspection

Optimization of defect detection sensitivity and cost of own...

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SPIE Advanced Lithography + Patterning

作者： Gilad Reut Oded Ovdat Oren Cohen Shay Yasharzade Liran Zacs Inbar Kolsky Harel Ilan Shingo Ishida Tomohiro Saito Asahi Sawasato Yuki Kawabe Shinsuke Mizuno Applied Materials Israel Ltd. (Israel) Canon Inc. (Japan) Applied Materials Japan Inc. (Japan)

ISBN: (纸本)9781510686380

Photolithography is fundamental to semiconductor manufacturing, but as integrated circuits continue to shrink, the associated complexity and costs have escalated, particularly with the introduction of High Numerical Aperture Extreme Ultra-Violet (HNA EUV) systems. Nano Imprint Lithography (NIL) offers a compelling alternative, delivering a significantly lower Cost of Ownership (CoO) by physically imprinting nanometer-scale patterns into the resist, unlike traditional photolithography, which relies on light exposure. However, achieving robust process control and maintaining tool health in NIL requires a meticulous approach to Lithography Process Qualification (LPQ). This study investigates the integration of advanced Deep Ultra-Violet (DUV) Brightfield (BF) Optical Inspection technology with Stack Optimization to enhance a LPQ recipe for a 1xnm NIL line-space pitch stamp. Central to our methodology were finite-difference time-domain (FDTD) simulations, which played a critical role in identifying and selecting the most effective underlayer, material and thickness, to maximize defect detection sensitivity. Various optimization layers, strategically placed between the Silicon substrate and the resist adhesive layer were systematically tested on printed wafers. The maximum detection of the yield-critical Line Cut defects was achieved, in line with the predictions from FDTD simulations, surpassing the required success criteria for capture rate. This study not only demonstrates the effectiveness of the Design for Inspection (DFI) approach but also shows how optimizing the stack layers can reduce CoO for NIL process while improving defect control and yield in NIL-based processes. By integrating DFI principles with cutting-edge inspection techniques, this research outlines a clear pathway for achieving tighter defect control, higher yield, and enhanced process reliability in advanced semiconductor manufacturing.

关键词： Semiconducting wafers Nanoimprint lithography finite-difference time-domain method Simulations Optical inspection Yield improvement

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Optical properties of chiral three-dimensional photonic crystals

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Physical Review B 2023年第16期107卷 165307-165307页

作者： Shun Takahashi Takeyoshi Tajiri Yasuhiko Arakawa Satoshi Iwamoto Willem L. Vos Kyoto Institute of Technology Matsugasaki Sakyo-ku Kyoto 606-8585 Japan Department of Computer and Network Engineering The University of Electro-Communications 1-5-1 Chofugaoka Chofu Tokyo 182-8585 Japan Institute for Nano Quantum Information Electronics The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan Research Center for Advanced Science and Technology The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan Institute of Industrial Science The University of Tokyo 4-6-1 Komaba Meguro-ku Tokyo 153-8505 Japan Complex Photonic Systems (COPS) MESA+ Institute for Nanotechnology University of Twente P.O. Box 217 7500 AE Enschede The Netherlands

We perform a theoretical and numerical study of the optical properties of both direct and inverse three-dimensional (3D) chiral woodpile structures and a corresponding chiral Bragg stack, also known as a Reusch pile. We compute transmission spectra in the helical direction for finite crystals and photonic band structures, where we ensure the effective index of all structures to be the same. We find that both 3D structures show dual-band circular dichroism, where light with a particular circular polarization state—either left- or right-handed—reveals a broad stop band with major attenuation, whereas the other polarization state is transmitted nearly unimpeded. We observe such gaps in different frequency ranges with alternating handedness. The appearance of the circular-polarized gaps is successfully interpreted with a physical model wherein the circular polarization either corotates or counterrotates with the chiral structure, thereby effectively leading to a spatially dependent or a constant refractive index, and thus to the presence or absence of a gap. We find that the presence or absence of circularly polarized gaps is tuned by the transverse periods perpendicular to the chiral axis in both the 3D direct and inverse chiral woodpile crystal structures. The tunability of circular dichroism may find applications as on-chip sensors for circularly polarized light and in the on-chip detection of chiral molecules.

关键词： Photonic crystals Nanostructures Chiral symmetry Band structure methods finite-difference time-domain method

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Model of ultrashort-pulse laser excitation of bulk and thin film dielectrics: Coupling material excitation and electric field propagation

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Physical Review B 2023年第9期108卷 094307-094307页

作者： Peter S. Sneftrup Søren H. Møller Peter Balling Department of Physics and Astronomy Aarhus University Ny Munkegade 120 8000 Aarhus C Denmark

The interaction of ultrashort laser pulses with dielectrics is associated with strong coupling between the material response and the light. The ultrashort pulses excite the materials, and the corresponding rapid changes in optical properties, induced by the generation of free carriers, determine the propagation of the light. In this paper, we describe a self-consistent model for this interaction. The material excitation is described by a model in which the electron dynamics is captured by a set of multiple rate equations coupling energy levels in a conduction band that has been discretized into energy states separated by the photon energy. The propagation of the light is calculated from Maxwell's equations using the finite-difference time-domain approach. The model is used to calculate key observables from laser ablation experiments, e.g., the threshold fluence versus pulse duration and the depth of laser-ablated structures versus fluence, for bulk and thin film samples. For both freestanding thin samples and dielectric stacks, corresponding to high-reflectivity mirrors, the results of the model are strongly influenced by interference phenomena, which significantly influence the material response and ablation. The model is compared to an existing approach using propagation of the intensity envelope of the pulse. In the absence of interference, the two methods predict almost identical ablation thresholds as well as hole depths.

关键词： Carrier dynamics Laser applications Dielectrics Wide band gap systems finite-difference time-domain method Laser ablation Transfer matrix method

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An optical 2-to-4 decoder based on photonic crystal X-shaped resonators covered by graphene shells

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OPTICAL AND QUANTUM ELECTRONICS 2023年第5期55卷 452-452页

作者： Raad, Ali Nayyeri Saghaei, Hamed Mehrabani, Yavar Safaei Islamic Azad Univ Dept Comp Engn North Tehran Branch Tehran Iran Islamic Azad Univ Dept Elect Engn Shahrekord Branch Shahrekord Iran Islamic Azad Univ Energy Res Ctr Shahrekord Branch Shahrekord Iran

This paper presents a novel design of a high-speed optical 2-to-4 decoder based on the photonic crystal (PhC) composed of silicon rods. The proposed structure consists of three inputs (one for enable and two for decoder inputs), three PhC X-shaped resonators, several waveguides, and four outputs. Each resonator includes silica rods covered by graphene shells. The plane-wave expansion (PWE) method is used to calculate the band structure of the fundamental PhC. The finite-difference time-domain (FDTD) method is applied to compute optical light's transmission efficiency and electric field distribution inside the designed decoder. We demonstrate that the proposed decoder can operate in the third communication window, ranging from 1530 to 1565 nm. The numerical results reveal that the normalized transmission values less than 30% and greater than 50% are supposed to be logics 0 and 1, respectively. The decoder's maximum delay and total footprint are 2.5 ps and 690 mu m(2), respectively. Thus, due to the decoder's relatively simple and low-cost fabrication and its applications in photonics-based systems, the proposed device can be used in optical communications and networking.

关键词： Photonic crystal Optical decoder Graphene Resonator Plane-wave expansion method finite-difference time-domain method

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Plasmon Hybridization-Induced Ultra-broadband High Absorption from 0.4 to 1.8 Microns in Titanium Nitride Metastructures

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PLASMONICS 2021年第3期16卷 799-809页

作者： Wu, Shiwen Luo, Tengfei Xiong, Guoping Univ Texas Dallas Dept Mech Engn Richardson TX 75080 USA Univ Nevada Dept Mech Engn Reno NV 89557 USA Univ Notre Dame Dept Aerosp & Mech Engn Notre Dame IN 46556 USA

Titanium nitride (TiN) metadevices as perfect absorbers are studied using finite-difference time-domain (FDTD) simulations. In this paper, we demonstrate a metastructure including a top silica (SiO2) layer, two layers of TiN nano-ribbon arrays, a SiO2 dielectric layer, and a TiN film to realize efficient solar energy harvesting. We theoretically optimize the geometrical parameters of each active layer to achieve high absorption rates with an average value of up to 95% within an ultra-wide band from 0.4 to 1.8 microns, covering over 93% of total energy in the solar spectrum. Our detailed analysis of the electric field enhancement indicates that such ultra-broadband high absorption in the visible/near-infrared ranges can be attributed to surface plasmon resonances, Fabry-Perot resonances, and strong plasmon hybridization between adjacent TiN nano-ribbons. Together with refractory properties of TiN and SiO2, the designed metadevice may exhibit great potential in efficient solar energy harvesting applications, particularly in harsh environments.

关键词： Metastructures finite-difference time-domain method Plasmonic hybridization Nano-ribbon arrays Ultra-broadband absorption

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Low-Cost Plasmonic Platform for Photon-Emission Engineering of Two-Dimensional Semiconductors

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Physical Review Applied 2023年第4期19卷 044012-044012页

作者： Anuj Kumar Singh Kishor K. Mandal Yashika Gupta Abhay Anand V.S. Lekshmi Eswaramoorthy Brijesh Kumar Abhinav Kala Saurabh Dixit Venu Gopal Achanta Anshuman Kumar Department of Physics Laboratory of Optics of Quantum Materials IIT Bombay Mumbai 400076 India Department of Condensed Matter Physics and Material Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai 400005 India

Although the field of two-dimensional (2D) materials has democratized materials science by making high-quality samples accessible cheaply, due to the atomically thin nature of these systems, an integration with nanostructures is almost always required to obtain a significant optical response. Traditionally, these nanostructures are fabricated via electron beam lithography or focused ion beam milling, which are expensive, and large-area fabrication can be further time-consuming. In order to overcome this problem, we report the integration of 2D semiconductors on a cost-effective and large-area fabricated nanocone platform. We show that the plasmon modes of our nanocone structures lead to photoluminescence enhancement of monolayer WSe2 by about eight to ten times compared with the nonplasmonic case, consistent with finite-difference time-domain simulations. Excitation power-dependent measurements reveal that our nanocone platform enables a versatile route to engineering the relative exciton trion contributions to the emission.

关键词： Nanophotonics Transition metal dichalcogenides Crystal growth Etching Film deposition finite-difference time-domain method Photoluminescence Raman spectroscopy

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Enhancing two-photon spontaneous emission in rare earths using graphene and graphene nanoribbons

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Physical Review B 2023年第19期107卷 195420-195420页

作者： Colin Whisler Gregory Holdman D. D. Yavuz Victor W. Brar University of Wisconsin-Madison

The enhancement of two-photon spontaneous emission (2PSE) from trivalent and divalent rare earth ions in proximity to graphene and graphene nanoribbons is calculated for achievable experimental conditions using a combination of finite difference time domain simulations and direct computation of transition rates between energy levels in rare earths. For Er3+, we find that the 2PSE rate is initially 8 orders lower than the single-photon spontaneous emission rate but that, with enhancement, 2PSE can reach 2.5% of the overall decay. When graphene nanoribbons are used, we also show that the emission of free-space photon pairs from Er3+ at 3–3.2 μm via 2PSE can be increased by ∼400. Our calculations show significantly less relative graphene-enhanced 2PSE than previous works, and we attribute this variation to differences in emitter size and assumed graphene mobility. We also show that the internal energy structure of the ion can have an impact on the degree of 2PSE enhancement achievable and find that divalent rare earths are more favorable.

关键词： Electronic structure of atoms & molecules Spontaneous emission Surface plasmons Graphene Nanoribbon finite-difference time-domain method

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β-Ga2O3 microwires and nanomembranes for photonics

β-Ga2O3 microwires and nanomembranes for photonics

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OPTO

作者： Daniel Carrasco Manuel Alonso-Orts Paula Pérez-Peinado Ruben J. T. Neelissen Pedro L. Alcázar Jaime Dolado Gema Martínez-Criado Jorge Quereda Francisco Domínguez-Adame Martin Eickhoff Bianchi Méndez Emilio Nogales Univ. Complutense de Madrid (Spain) Univ. of Bremen (Germany) Instituto de Ciencia de Materiales de Madrid (Spain) Ctr. Superior de Investigaciones Científicas (Spain) European Synchrotron Radiation Facility (France)

The interest in ultrawide bandgap semiconductor gallium oxide, especially its monoclinic phase (β-Ga2O3), has been increasing significantly since the first transistors were created with this oxide, which demo... 详细信息

ISBN: (纸本)9781510684829

The interest in ultrawide bandgap semiconductor gallium oxide, especially its monoclinic phase (β-Ga₂O₃), has been increasing significantly since the first transistors were created with this oxide, which demonstrated a critical field strength greater than that of SiC (>2.5MV/cm). Furthermore, its ultrawide band gap has led to extensive exploration of its photonic and optoelectronic properties over more than six decades, with numerous studies devoted to applications such as UV solar-blind detectors and luminescent devices. Nanostructured semiconductors are key to developing architectures that expand the possibilities of electronic and photonic devices. Nanostructured β-Ga₂O₃ has not yet been extensively studied compared to other semiconductors, but the work conducted so far shows great potential. In this study, we present our recent investigation of two approaches that leverage several physical properties—such as temperature-dependent luminescence, refractive index or crystal anisotropy—of β-Ga₂O₃ nanomembranes (NMs) and microwires (μWs) for photonic applications. We have studied luminescence-based microthermometers fabricated by defining optical microcavities with distributed Bragg reflectors (DBR) created using atomic-layer-deposited (ALD) multilayers that encapsulate β-Ga₂O₃:Cr μWs. This approach improves the robustness and thermal stability of the thermometric devices that we had previously developed in a wide temperature range. An optical assessment of these sensors, comparing different ALD designs, is shown. Additionally, we have studied mechanically exfoliated β-Ga₂O₃ NMs with thicknesses of a few hundred nanometers, evaluated using optical interferometry and synchrotron-based X-ray excited optical luminescence (XEOL). A strong ultraviolet-blue luminescence emission band was observed.

关键词： Simulations Luminescence Photonics Optical microcavities Reflectivity finite-difference time-domain method X-ray optics Gallium oxide X-rays

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Publication guidelines for papers involving computational lithography

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Journal of Micro/Nanopatterning, Materials and Metrology 2021年第4期20卷

作者： Levinson, Harry J. HJL Lithography (United States)

Editor-in-Chief Harry Levinson introduces a new set of guidelines for papers related to computational lithography.

关键词： Computational lithography Computer simulations finite-difference time-domain method Lithography Photomasks Network architectures Neural networks New and emerging technologies Physics Semiconducting wafers

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Diffraction Phenomena in time-Varying Metal-Based Metasurfaces

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Physical Review Applied 2023年第4期19卷 044014-044014页

作者： Antonio Alex-Amor Salvador Moreno-Rodríguez Pablo Padilla Juan F. Valenzuela-Valdés Carlos Molero Department of Information Technology Universidad San Pablo—CEU CEU Universities Campus Montepríncipe Boadilla del Monte (Madrid) 28668 Spain Department of Signal Theory Telematics and Communications Universidad de Granada Granada 18071 Spain

This paper presents an analytical framework for the analysis of time-varying metal-based metamaterials. Specifically, we particularize the study to time-modulated metal-air interfaces embedded between two different semi-infinite media that are illuminated by monochromatic plane waves of frequency ω0. The formulation is based on a Floquet-Bloch modal expansion, which takes into account the time periodicity of the structure (Ts=2π/ωs) and integral-equation techniques. It allows us to extract the reflection and transmission coefficients as well as to derive nontrivial features about the dynamic response and dispersion curves of time-modulated metal-based screens. In addition, the proposed formulation has an associated analytical equivalent circuit that gives a physical insight into the diffraction phenomenon. Similarities and differences between space- and time-modulated metamaterials are discussed via the proposed circuit model. Finally, some analytical results are presented to validate the present framework. Good agreement is observed with numerical computations provided by a self-implemented finite-difference time-domain (FDTD) method. Interestingly, the present results suggest that time-modulated metal-based screens can be used as pulsed sources (when ωs≪ω0), beam formers (ωs∼ω0) to redirect energy in specific regions of space, and analog samplers (ωs≫ω0).

关键词： Metamaterials Metasurfaces Bloch-Floquet theorem Electromagnetic wave theory finite-difference time-domain method

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