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检索条件"主题词=GATE array circuits"
310 条 记 录,以下是151-160 订阅
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Spin-Orbit-Mediated Manipulation of Heavy-Hole Spin Qubits in gated Semiconductor Nanodevices
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Physical Review Letters 2012年 第10期109卷 107201-107201页
作者: P. Szumniak S. Bednarek B. Partoens F. M. Peeters Faculty of Physics and Applied Computer Science AGH University of Science and Technology al. Mickiewicza 30 30-059 Kraków Poland Departement Fysica Universiteit Antwerpen Groenenborgerlaan 171 B-2020 Antwerpen Belgium
A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole spin transformations are realized b... 详细信息
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Hole spin relaxation in p-type (111) GaAs quantum wells
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Physical Review B 2012年 第23期85卷 235308-235308页
作者: L. Wang M. W. Wu Hefei National Laboratory for Physical Sciences Microscale and Department of Physics University of Science and Technology of China Hefei Anhui 230026 China
Hole spin relaxation in p-type (111) GaAs quantum wells is investigated for cases in which only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells,... 详细信息
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Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
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Physical Review B 2012年 第3期86卷 035321-035321页
作者: Yue Wu Dimitrie Culcer ICQD Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei Anhui 230026 China
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a sm... 详细信息
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Band gaps in graphene via periodic electrostatic gating
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Physical Review B 2012年 第23期85卷 235432-235432页
作者: Jesper Goor Pedersen Thomas Garm Pedersen Department of Physics and Nanotechnology Aalborg University Skjernvej 4A DK-9220 Aalborg East Denmark Center for Nanostructured Graphene (CNG) Aalborg University DK-9220 Aalborg East Denmark
Much attention has been focused on ways of rendering graphene semiconducting. We study periodically gated graphene in a tight-binding model and find that, contrary to predictions based on the Dirac equation, it is pos... 详细信息
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Polaron effects on the dc- and ac-tunneling characteristics of molecular Josephson junctions
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Physical Review B 2012年 第3期86卷 035406-035406页
作者: B. H. Wu J. C. Cao C. Timm Department of Applied Physics Donghua University 2999 North Renmin Road Shanghai 201620 China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 China Institute of Theoretical Physics Technische Universität Dresden 01062 Dresden Germany
We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, whic... 详细信息
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Kondo temperature of a quantum dot
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Physical Review B 2012年 第23期85卷 235311-235311页
作者: Seungjoo Nah Michael Pustilnik School of Physics Georgia Institute of Technology Atlanta Georgia 30332 USA
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson... 详细信息
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Water-assisted mobile charge induced screening and origin of hysteresis in carbon nanotube field-effect transistors
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Physical Review B 2012年 第11期86卷 115444-115444页
作者: Y. Pascal-Levy E. Shifman M. Pal-Chowdhury I. Kalifa T. Rabkin O. Shtempluck A. Razin V. Kochetkov Y. E. Yaish Russell Berrie Nanotechnology Institute Technion Haifa 32000 Israel Department of Electrical Engineering Technion Haifa 32000 Israel
Carbon nanotube field-effect transistors (CNT FETs) have many possible applications in future nanoelectronics due to their excellent properties. However, one of the major challenges regarding their performance is the ... 详细信息
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Ionic screening of charged impurities in electrolytically gated graphene
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Physical Review B 2012年 第11期86卷 115437-115437页
作者: Z. L. Mišković P. Sharma F. O. Goodman Department of Applied Mathematics University of Waterloo Waterloo Ontario Canada N2L 3G1
We present a model for dual-gated, single-layer graphene, with a back gate separated by a layer of oxide, and the top gate potential applied through a thick layer of liquid electrolyte that contains mobile ions in a d... 详细信息
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Configuration interaction calculations of the controlled phase gate in double quantum dot qubits
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Physical Review B 2012年 第3期85卷 035319-035319页
作者: Erik Nielsen Richard P. Muller Malcolm S. Carroll Sandia National Laboratories Albuquerque New Mexico 87185 USA
We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) singlet-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically... 详细信息
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Hybrid topological-spin qubit systems for two-qubit-spin gates
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Physical Review B 2012年 第10期86卷 104511-104511页
作者: Martin Leijnse Karsten Flensberg Center for Quantum Devices Niels Bohr Institute University of Copenhagen 2100 Copenhagen Ø Denmark
We investigate a hybrid quantum system involving spin qubits, based on the spins of electrons confined in quantum dots, and topological qubits, based on Majorana fermions. In such a system, gated control of the charge... 详细信息
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