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A self-consistent extraction procedure for source/drain resistance in MOSFETs

MICROELECTRONICS RELIABILITY 2011年第12期51卷 2049-2052页

作者： Chang, Yang-Hua Liu, Yao-Jen Natl Yunlin Univ Sci & Technol Dept Elect Engn Yunlin 64002 Taiwan

A new method to determine source/drain series resistance has been developed for MOSFETs operated in linear region. The source/drain resistance (R-SD) is gate-bias dependent. Channel length reduction (Delta L) is extracted at low gate bias and chosen to be constant. All parameters extracted in this method are assumed to be independent of mask channel length for model simplicity. The method has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 mu m. The extracted parameters are consistent with the assumptions and have been validated by measured I-V characteristics. (C) 2011 Elsevier Ltd. All rights reserved.

关键词： METAL oxide semiconductor field-effect transistors ELECTRIC resistance gate array circuits MASKS (Electronics) CHANNELING (Physics) ANALOG integrated circuits

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Surface-Confined Assemblies and Polymers for Molecular Logic

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ACCOUNTS OF CHEMICAL RESEARCH 2011年第8期44卷 563-573页

作者： de Ruiter, Graham van der Boom, Milko E. Weizmann Inst Sci Dept Organ Chem IL-76100 Rehovot Israel

Stimuli responsive materials are capable of mimicking the operation characteristics of logic gates such as AND, OR, NOR, and even flip-flops. Since the development of molecular sensors and the introduction of the first AND gate in solution by de Silva in 1993, Molecular (Boolean) Logic and Computing (MBLC) has become increasingly popular. In this Account, we present recent research activities that focus on MBLC with electrochromic polymers and metal polypyridyl complexes on a solid support. Metal polypyridyl complexes act as useful sensors to a variety of analytes in solution (i.e., H2O, Fe2+/3+, Cr6+, NO+) and in the gas phase (NO in air). This information transfer, whether the analyte is present, is based on the reversible redox chemistry of the metal complexes, which are stable up to 200 degrees C in air. The concurrent changes in the optical properties are nondestructive and fast. In such a setup, the input is directly related to the output and, therefore, can be represented by one-input logic gates. These input-output relationships are extendable for mimicking the diverse functions of essential molecular logic gates and circuits within a set of Boolean algebraic operations. Such a molecular approach towards Boolean logic has yielded a series of proof-of-concept devices: logic gates, multiplexers, half-adders, and flip-flop logic circuits. MBLC is a versatile and, potentially, a parallel approach to silicon circuits: assemblies of these molecular gates can perform a wide variety of logic tasks through reconfiguration of their inputs. Although these developments do not require a semiconductor blueprint, similar guidelines such as signal propagation, gate-to-gate communication, propagation delay, and combinatorial and sequential logic will play a critical role in allowing this field to mature. For instance, gate-to-gate communication by chemical wiring of the gates with metal ions as electron carriers results in the integration of stand-alone systems: the output o

关键词： SURFACE chemistry POLYMERS MOLECULAR electronics LOGIC circuits gate array circuits ELECTROOPTICS METAL complexes

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A universal adapter of the PCI bus for connecting the computer to the experimental equipment

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INSTRUMENTS AND EXPERIMENTAL TECHNIQUES 2011年第6期54卷 771-777页

作者： Basiladze, S. G. Petrov, V. S. Sen'ko, V. A. Moscow MV Lomonosov State Univ Skobeltsyn Inst Nucl Phys Moscow 119992 Russia IHEP Protvino 142281 Moscow Oblast Russia

An adapter of the PCI bus is intended for connecting peripherals with separate address and data buses to IBM PC personal computers. The adapter, which is the interface card of the PCI bus, converts signals of this bus into signals of Multibus and EUR 4600 cable trunks. The protocols of both buses are implemented with the use of the ER1K50QC208 field programmable gate array (ALTERA). The minimal attainable duration of the 16-bit data transmission cycle is similar to 0.5 mu s. The address range is 16-24 bits.

关键词： PHYSICS experiments PERSONAL computers gate array circuits DATA transmission systems INTERFACES (Physical sciences) CABLES

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Tunable THz metamaterials based on an array of paraelectric SrTiO₃ rods

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 2011年第3期103卷 689-692页

作者： Yahiaoui, R. Nemec, H. Kuzel, P. Kadlec, F. Kadlec, C. Mounaix, P. Univ Bordeaux 1 CNRS Lab Ondes & Mat Aquitaine UMR 5798 F-33405 Talence France Acad Sci Czech Republ Inst Phys Prague 18221 8 Czech Republic

This work presents theoretical and experimental investigations of a tunable metamaterial which exhibits negative permeability in the THz frequency range. The tunability is obtained by temperature changes, and the sample consists of an array of high-permittivity SrTiO3 (STO) rods micromachined by a femtosecond laser. Structures exhibiting a negative permeability on multiple frequency bands are also investigated and a proper choice of the dimensions of the pattern allows us to achieve a substantial broadening of the frequency band with negative mu.

关键词： METAMATERIALS PERMEABILITY TITANIUM dioxide MOLECULAR structure gate array circuits MICROELECTROMECHANICAL systems ENERGY bands FEMTOSECOND lasers BARS (Engineering) TEMPERATURE effect

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Band alignment and interfacial properties of atomic layer deposited (TiO₂) _x (Al₂O₃)_1-x gate dielectrics on Ge

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 2011年第3期105卷 763-767页

作者： Li, Xue-Fei Fu, Ying-Ying Liu, Xiao-Jie Li, Ai-Dong Li, Hui Wu, Di Nanjing Univ Natl Lab Solid State Microstruct Mat Sci & Engn Dept Nanjing 210093 Peoples R China

(TiO2) (x) (Al2O3)(1-x) (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO2)(0.8)(Al2O3)(0.2) film annealed at 500A degrees C is amorphous with sharp interface between (TiO2)(0.8)(Al2O3)(0.2) and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 for (TiO2)(0.9)(Al2O3)(0.1) gate dielectrics is achieved with a gate leakage current of 2.70x10(-5) A/cm(2) at V (g)=+1 V.

关键词： INTERFACES (Physical sciences) ENERGY bands gate array circuits DIELECTRICS GERMANIUM CHEMICAL processes X-ray photoelectron spectroscopy ELECTRIC capacity

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Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors

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MICROELECTRONICS RELIABILITY 2011年第3期51卷 556-559页

作者： Hastas, N. A. Arpatzanis, N. Dimitriadis, C. A. Brochet, J. Templier, F. Kamarinos, G. Aristotle Univ Thessaloniki Dept Phys Thessaloniki 54124 Greece CEA LETI Minatec F-38054 Grenoble France ENSERG IMEP F-38016 Grenoble 1 France

The hysteresis effect observed in the transfer characteristics of n-channel bottom-gate hydrogenated polymorphous silicon (pm-Si:H) thin-film transistors (TFTs) is investigated in terms of the channel width. Such phenomenon is observed in devices of wide channel (> 20 mu m), whereas it diminishes in devices of narrow channel. The hysteresis of wide channel TFTs is mainly due to charges injected from the channel, trapped in the gate dielectric. As the channel width is reduced the edge effect becomes more significant and the effect of carrier injection from the channel is eliminated, which is balanced by the effect of charge injection from the gate electrode. (C) 2010 Elsevier Ltd. All rights reserved.

关键词： HYSTERESIS gate array circuits POLYMORPHISM (Crystallography) SILICON THIN film transistors ELECTRONIC apparatus & appliances DIELECTRICS

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Colorimetric logic gates for small molecules using split/integrated aptamers and unmodified gold nanoparticles

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CHEMICAL COMMUNICATIONS 2011年第33期47卷 9435-9437页

作者： Xu, Xiaowen Zhang, Jia Yang, Fan Yang, Xiurong Chinese Acad Sci Changchun Inst Appl Chem State Key Lab Electroanalyt Chem Changchun 130022 Jilin Peoples R China Chinese Acad Sci Grad Sch Beijing 100039 Peoples R China

Herein we report the "OR" and "AND" colorimetric logic gates for small molecules using split/integrated aptamers and unmodified gold nanoparticles, which generate visually observed outputs accordin... 详细信息

关键词： COLORIMETRIC analysis LOGIC circuits gate array circuits COLLOIDAL gold BOOLEAN algebra MOLECULAR electronics

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Responsive Two-Photon Induced Europium Emission as Fluorescent Indicator for Paralytic Shellfish Saxitoxin

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ORGANIC LETTERS 2011年第19期13卷 5036-5039页

作者： He, Shuzhong Li, Hongguang Yip, Yuk-Wang Yeung, Chi-Tung Fung, Yuen On Kong, Hoi-Kuan Yeung, Ho-Lun Law, Ga-Lai Wong, Ka-Leung Lee, Chi-Sing Lam, Michael Hon-Wah Murphy, Margaret B. Lam, Paul Kwan-Sing Wong, Wing-Tak Peking Univ Shenzhen Grad School Lab Chem Genom Sch Chem Biol & Biotechnol Shenzhen 518055 Peoples R China Hong Kong Polytech Univ Dept Appl Biol & Chem Technol Hong Kong Hong Kong Peoples R China Hong Kong Baptist Univ Dept Chem Kowloon Tong Hong Kong Peoples R China City Univ Hong Kong Dept Biol & Chem Kowloon Tong Hong Kong Peoples R China Hong Kong Polytech Univ State Key Lab Chirosci Kowloon Hong Kong Peoples R China

A water-soluble europium(III) complex (1) has been synthesized and demonstrated to be a specific fluorescence probe for the paralytic shellfish toxin saxitoxin, a neurotoxin that blocks the voltage-gated sodium channels on cell membranes. Saxitoxin binds to the europium complex (K-B = 6.1 x 10(4) M-1) and triggers a two-photon induced f-f emission enhancement by over 100% and increases the two-photon absorption cross-section from 9 to 36 GM.

关键词： COMPLEX compounds -- Synthesis FIELD emission EUROPIUM PARALYSIS SHELLFISH SAXITOXIN FLUORESCENT probes gate array circuits CELL membranes

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Developments in nanocrystal memory

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MATERIALS TODAY 2011年第12期14卷 608-615页

作者： Chang, Ting-Chang Jian, Fu-Yen Chen, Shih-Cheng Tsai, Yu-Ting Natl Sun Yat Sen Univ Dept Phys Kaohsiung 804 Taiwan Natl Chiao Tung Univ Dept Elect Engn Hsinchu 300 Taiwan Natl Chiao Tung Univ Inst Elect Hsinchu 300 Taiwan Natl Tsing Hua Univ Dept Elect Engn Hsinchu Taiwan Natl Tsing Hua Univ Inst Elect Engn Hsinchu Taiwan

Since the 1990s, portable electronic products have been a prominent part of our daily lives;and many of these devices require flash memories. The floating-gate (FG) structure, invented by Sze and Kahng at Bell Labs in 1967, forms the primary technology necessary to construct flash memories(1), Fig. 1a. In order to meet the demands of product miniaturization, the shrinking of transistors has evolved as a method to not only pack more devices into a given area, but also improve the switching speed. In such a situation, conventional nonvolatile memory (FG) suffers from certain physical limitations, such as an insufficient tunneling oxide thickness from the continual scaling down of the device structures(2). Because the floating gate (as a charge storing layer) is conductive, all charge will be lost if a leakage path appears in the tunneling oxide, resulting in a serious reliability issue for memory applications. Discrete nanocrystal memory was first proposed by IBM in 1995, and by the early 2000s researchers were already considering it to be a promising candidate for the solution of the scaling problem(3) (Fig. 1b). In addition, nanocrystal memory has a two bit per cell storage capability due to its discrete electron storing center. This means that more data can be stored in one memory cell, which readily increases the memory density(4).

关键词： COMPUTER storage devices NANOCRYSTALS ELECTRONIC apparatus & appliances FLASH memories (Computers) gate array circuits RELIABILITY (Engineering) MICROFABRICATION

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Study of trap-filling effect on transient carrier transport in pentacene field effect transistors by time-resolved optical second harmonic generation

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CHEMICAL PHYSICS LETTERS 2011年第1-3期507卷 195-198页

作者： Tanaka, Yasuyuki Manaka, Takaaki Iwamoto, Mitsumasa Tokyo Inst Technol Dept Phys Elect Meguro Ku Tokyo 1528552 Japan

By using time-resolved microscopic optical second-harmonic generation (TRM-SHG) imaging, we studied the trap-filling effect on transient carrier transport in pentacene field effect transistors (FETs). We showed that the transient carrier transport was strongly dependent on trap-filling condition at the pentacene and gate-insulator interface. The TRM-SHG imaging caught the transient electric field migration which was caused from traveling carriers along the channel. Results showed that the effective carrier mobility increased with increase of the filled-trap density, i,e., with decrease of empty trap-sites, and finally saturated after all trap-sites were filled. Saturation voltage of the mobility indicates the filled trap density of approximately 1.4 x 10(12)/cm(2). (C) 2011 Elsevier B.V. All rights reserved.

关键词： TRANSIENTS (Electricity) ELECTRON transport PENTACENE ORGANIC field-effect transistors SECOND harmonic generation INTERFACES (Physical sciences) gate array circuits ELECTRIC insulators & insulation ELECTRON mobility

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