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Sensing of UO₂²⁺ and Design of Logic gates by the Application of Supramolecular Constructs of Ion-Dependent DNAzymes

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NANO LETTERS 2009年第3期9卷 1196-1200页

作者： Moshe, Michal Elbaz, Johann Willner, Itamar Hebrew Univ Jerusalem Inst Chem Ctr Nanosci & Nanotechnol IL-91904 Jerusalem Israel

Supramolecular constructs composed of ion-dependent DNAzymes and their substrates were used to develop DNAzyme cascades that enabled the sensitive detection Of UO22+ or the activation of logic gate operations. The supramolecular complex between the UO22+-dependent DNAzyme and its substrate leads, in the presence Of UO22+, to the cleavage of the substrate and to the release of the HRP-mimicking DNAzyme that enables the optical analysis Of UO22+ (detection limit 1 x 10(-9) M). Similarly, supramolecular complexes between the Mg2+- and UO22+- dependent DNAzymes and tailored substrates enables the design of the "OR" and "AND" logic gates, using Mg2+ and UO22+ as inputs.

关键词： SUPRAMOLECULAR chemistry CHEMICAL detectors CATALYSTS NUCLEIC acids COMPLEX compounds SCISSION (Chemistry) gate array circuits URANIUM compounds

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An interpolating time-to-digital converter on an FPGA

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INSTRUMENTS AND EXPERIMENTAL TECHNIQUES 2009年第6期52卷 788-792页

作者： Chulkov, V. A. Medvedev, A. V. Penza State Technol Acad Penza 440605 Russia

A simple and sufficiently precise unit converting single time intervals to digital codes on an EP2C20F484C7N Altera field programmable gate array is proposed. The resolution of the converter, the principle of operation of which is based on interpolating the reference period by a great number of outputs of a ring pulse oscillator, is determined by the delay time of the oscillator stage and is 315 ps. The converted interval range is 2.58 A mu s, and the "dead" zone between adjacent conversions does not exceed 5 ns. The circuit does not need any adjustments and is insensitive to supply voltage and environment temperature deviations.

关键词： FIELD programmable gate arrays ELECTRIC oscillators ELECTRIC apparatus & appliances ELECTRIC circuits gate array circuits

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One-way gates based on EPR, GHZ and decoherence-free states of W class

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PHYSICS LETTERS A 2009年第38期373卷 3410-3412页

作者： Basharov, A. M. Gorbachev, V. N. Trubilko, A. I. Yakovleva, E. S. Kurchatov Inst Lab Nonlinear Opt Moscow Russia

The logical gates using quantum measurement as a primitive of quantum computation are considered. It is found that these gates achieved with EPR, GHZ and W entangled states have the same structure, allow encoding the classical information into states of quantum system and can perform any calculations. A particular case of decoherence-free W states is discussed as in this very case the logical gate is decoherence-free. (C) 2009 Elsevier B.V. All rights reserved.

关键词： COHERENT states gate array circuits SYMBOLIC & mathematical logic QUANTUM theory ENERGY levels (Quantum mechanics) ELECTRON paramagnetic resonance

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Photo-switch and INHIBIT logic gate based on two pyrazolone thiosemicarbazone derivatives

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NEW JOURNAL OF CHEMISTRY 2009年第11期33卷 2232-2240页

作者： Xie, Xiangyun Liu, Lang Jia, Dianzeng Guo, Jixi Wu, Dongling Xie, Xiaolin Xinjiang Univ Inst Appl Chem Urumqi 830046 Peoples R China Huazhong Univ Sci & Technol Dept Chem & Chem Engn Natl Anticounterfeit Engn Res Ctr Wuhan 430074 Peoples R China

Two novel compounds containing a pyrazolone-ring unit, i.e. 1-phenyl-3-methyl-4(2-fluorobenzal)-5-hydroxypyrazole 4-methylthiosemicarbazone and 1-phenyl-3-methyl-4( 2-fluorobenzal)-5-hydroxypyrazole 4-ethylthiosemicarbazone, have been synthesized and characterized by MS, IR, H-1 NMR spectra and X-ray single crystal diffraction. In solid state, they exhibit reversible photochromic properties under UV light irradiation and heating. Based on the crystal structure, solid IR spectra and theoretical calculation, the photochromic mechanism of the intra-and intermolecular double-proton transfer from the enol form to the keto form is proposed. In solution, stimulated by three chemical inputs (H+, OH- and Zn2+), they undergo the deprotonation-protonation and complexation reactions. Based on an absorption band at 355 nm as the output signal, an INHIBIT logic gate combining a NOT and an AND gate has been obtained.

关键词： PHOTOCHEMISTRY gate array circuits THIOSEMICARBAZONES ORGANIC synthesis (Chemistry) NUCLEAR magnetic resonance spectroscopy SOLID state chemistry PROTON transfer reactions

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Performance simulation and analysis of a CMOS/nano hybrid nanoprocessor system

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NANOTECHNOLOGY 2009年第16期20卷 165203 (8p-165203 (8p页

作者： Cabe, Adam C. Das, Shamik Mitre Corp Nanosyst Grp Mclean VA 22102 USA

This paper provides detailed simulation results and analysis of the prospective performance of hybrid CMOS/nanoelectronic processor systems based upon the field-programmable nanowire interconnect (FPNI) architecture. To evaluate this architecture, a complete design was developed for an FPNI implementation using 90 nm CMOS with 15 nm wide nanowire interconnects. Detailed simulations of this design illustrate that critical design choices and tradeoffs exist beyond those specified by the architecture. This includes the selection of the types of junction nanodevices, as well as the implementation of low-level circuits. In particular, the simulation results presented here show that only nanodevices with an 'on/off' current ratio of 200 or more are suitable to produce correct system-level behaviour. Furthermore, the design of the CMOS logic gates in the FPNI system must be customized to accommodate the resistances of both 'on'-state and 'off'-state nanodevices. Using these customized designs together with models of suitable nanodevices, additional simulations demonstrate that, relative to conventional 90 nm CMOS FPGA systems, performance gains can be obtained of up to 70% greater speed or up to a ninefold reduction in energy consumption.

关键词： NANOELECTROMECHANICAL systems COMPLEMENTARY metal oxide semiconductors PERFORMANCE evaluation NANOWIRES INTERCONNECTS (Integrated circuit technology) gate array circuits SIMULATION methods & models DESIGN & construction

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Tunable transient evolutional behaviours of a four-level atomic vapour and the application to photonic logic gates

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JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS 2009年第5期42卷 055502 (8p-055502 (8p页

作者： Gharibi, Arash Shen, Jian Qi Gu, Jing Ctr Opt & Electromagnet Res State Key Lab Modern Opt Instrumentat Hangzhou 310058 Zhejiang Peoples R China Zhejiang Univ Hangzhou 310058 Zhejiang Peoples R China Royal Inst Technol Joint Res Ctr Photon Stockholm Sweden

The evolutional optical behaviours (turn-on dynamics) of a four-level N-configuration atomic system are considered based on the transient solution to the equations of motion of atomic probability amplitudes. It is shown that the quantum interference between the signal and control fields can lead to the controllable absorption and transparency properties of the atomic vapour. One of the most remarkable properties of the present scheme is that the absorption (or transmittance) of the probe light in the atomic vapour depends on the intensity ratio of the signal field to the control field, and thus the tunable optical features (transparency or opaqueness to the probe light) can be realized by tuning the quantum interferences between the signal and control fields. The present mechanism can be applicable to designs of some new photonic and quantum optical devices such as logic and functional devices as well as optical switches. Two typical photonic logic gates (NOT and NOR gates) designed based on the tunable four-level optical responses are presented as illustrative examples.

关键词： TRANSIENTS (Dynamics) gate array circuits EQUATIONS of motion QUANTUM interference ABSORPTION OPTICAL properties PHOTONICS

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gate-controlled quantum collimation in nanocolumn resonant tunneling transistors

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NANOTECHNOLOGY 2009年第46期20卷 465402-465402页

作者： Wensorra, J. Lepsa, M. I. Trellenkamp, S. Moers, J. Indlekofer, K. M. Lueth, H. Forschungszentrum Julich Inst Bio & Nanosyst IBN 1 D-52425 Julich Germany Forschungszentrum Julich JARA D-52425 Julich Germany FH Wiesbaden Univ Appl Sci D-65428 Russelsheim Germany

Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n(++)/i/n(++) along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits.

关键词： gate array circuits QUANTUM theory TUNNELING (Physics) TRANSISTORS CRYSTAL growth QUANTUM wells MICROFABRICATION ELECTRON beams

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Effect of thermal treatment on the band offsets and interfacial properties of HfO_xN_y gate dielectrics

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JOURNAL OF PHYSICS D-APPLIED PHYSICS 2009年第19期42卷 195304-195304页

作者： Liu, M. Zhang, L. D. Fang, Q. Zhang, J. P. Wang, X. J. He, G. Chinese Acad Sci Inst Solid State Phys Anhui Key Lab Nanomat & Nanostruct Key Lab Mat Phys Hefei 230031 Peoples R China Applicat Lab Yatton BS49 4AP England

Band offsets and interfacial properties of HfOxNy films grown on Si(100) through radio-frequency reactive magnetron sputtering were investigated by x-ray photoelectron spectroscopy. The changes in the conduction band offset, the valence band offset, as well as in the interfacial properties were obtained as a function of the annealing temperature. The interfacial layer is unavoidably formed for the deposited films and the composition of the interfacial layer is most likely Hf-silicate and SiOx. With the increase in the annealing temperature, it is confirmed that the reaction between SiOx and HfOxNy films formed more Hf-silicate interfacial layer. The valence band offset (Delta E-v) shifts upwards gradually with the increase in annealing temperature due to the decrease in N elements. After thermal treatment, the obtained conduction band offset (Delta E-c) increased from 1.20 eV at 500 degrees C to 1.25 eV at 800 degrees C.

关键词： HEAT treatment INTERFACES (Physical sciences) HAFNIUM compounds gate array circuits DIELECTRICS CRYSTAL growth RADIO frequency MAGNETRON sputtering X-ray photoelectron spectroscopy ELECTRIC conductivity

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Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2009年第10期24卷 105009-105009页

作者： Jang, Junyong Lim, Towoo Kim, Youngmin Hongik Univ Sch Elect Engn Seoul 121791 South Korea LGinnotek LED Div Kwangju 506731 South Korea

We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0 similar to 1 nm underlap is preferred for the surround high-k gate structure while 1 similar to 2 nm overlap for the conventional gate one.

关键词： METAL oxide semiconductor field-effect transistors DIELECTRICS gate array circuits ELECTRODES ELECTRIC capacity ELECTRIC resistance COMPUTER-aided design SIMULATION methods & models

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Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2009年第10期24卷 105001 (8p-105001 (8p页

作者： Kang, Zhaoyi Zhang, Liangliang Wang, Runsheng Huang, Ru Peking Univ Inst Microelect Beijing 100871 Peoples R China

The electrostatics of Schottky barrier (SB) source/drain (S/D) silicon nanowire transistors (SB-NWTs) are investigated in comparison with the conventional silicon nanowire transistors (SNWTs). The SB-NWTs are found to have degraded transfer/output properties, unacceptably large linear-region resistance (R-lin) and non-uniform gate controllability in the sub-threshold region. With low S/D Schottky barrier height and effective tunneling mass, the electrostatic properties of SB-NWTs can be enhanced. However, quantitative assessment shows that the enhancement is limited by the fact that the sub-threshold swing of SB-NWTs cannot prevail over that of SNWTs, and unexpected degradation in drain-induced barrier lowering (DIBL) as well as device scalability can be induced. It is also shown that, even under the most optimized condition, the R-lin of SB-NWTs is still larger than that of SNWTs, if the S/D extension (SDE) length of the standard SNWTs is designed to be short enough. It is shown that, from the point of electrostatic improvement, the replacement of SNWTs by SB-NWTs cannot be promising. The physics and effectiveness of Schottky barrier modulation approaches, such as dopant segregation and Fermi-level depinning, are also discussed.

关键词： TRANSISTORS SILICON NANOWIRES SCHOTTKY-barrier diodes ELECTROSTATICS gate array circuits TUNNELING (Physics) SYSTEMS design

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