resistiveswitchingmemory with a planar graphene nanoribbon structure has shown steady memory *** mechanically exfoliating the graphene sheet over a layer of 300 nm Si O2 substrate,the device was fabricated with one ...
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ISBN:
(纸本)9781509066261;9781509066254
resistiveswitchingmemory with a planar graphene nanoribbon structure has shown steady memory *** mechanically exfoliating the graphene sheet over a layer of 300 nm Si O2 substrate,the device was fabricated with one step of electron beam lithography and physical vapor *** device has an on/off ratio over 103,and exhibits multilevel resistiveswitching characteristics,making it possible to act as a synaptic *** we designed an artificial neuron network(ANN) to recognize images of 6 different letters,and the images were successfully *** result proposes a way to implement neuromorphic computation with carbon electronics.
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