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23rd IEEE International Symposium for Design and Technology in Electronic Packaging (SIITME)

作者： Gadjeva, Elissaveta Kunov, Georgi Tech Univ Sofia Dept Elect Sofia Bulgaria Tech Univ Sofia Dept Power Elect Sofia Bulgaria

ISBN: (纸本)9781538616260

An approach is proposed in the paper to parameter extraction of the single-diode model of photovoltaic panels. The extraction procedure is performed in the environment of the general-purpose circuit simulator Cadence PSpice and the graphical analyzer Cadence Probe. Parametric analysis with two independent parameters - the series resistance and the diode ideality constant, is used for the computer realization of the approach. As the simulator allows to vary only one parameter, the possibilities of the parametric analysis are extended to achieve simultaneous variation of two independent parameters. The implementation of parameter extraction procedure in standard circuit simulators allows its multiple use under different environmental conditions.

关键词： photovoltaic panels model parameter extraction PSpice simulator Probe macro-definitions parametric analysis

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Computer-Aided model parameter extraction of Photovoltaic Modules using SPICE 19

Computer-Aided Model Parameter Extraction of Photovoltaic Mo...

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19th International Symposium on Power Electronics (Ee)

作者： Gadjeva, Elissaveta Hristov, Marin Tech Univ Sofia Dept Elect Sofia Bulgaria Tech Univ Sofia Dept Microelect Sofia Bulgaria

ISBN: (纸本)9781538635025

An approach is developed in the paper to model parameter extraction of photovoltaic (PV) modules based on manufacturer's datasheet characteristics. The model parameters are obtained simultaneously for any environmental conditions (irradiance and temperature). The computer realization of the parameter extraction procedure is performed using the general-purpose circuit simulator PSpice and postprocessing in the graphical analyzer Probe to obtain the model parameters satisfying the defined requirements. The model accuracy is validated for different irradiance and temperature conditions. The implementation of the parameter extraction procedure of PV modules in standard circuit simulators such as PSpice allows its accessibility for the designers of PV systems.

关键词： photovoltaic (PV) modules model parameter extraction solving inverse problems SPICE simulation

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A parameter extraction Methodology for Graphene Field-Effect Transistors

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2023年第3期70卷 1393-1400页

作者： Jeppson, Kjell Chalmers Univ Technol Dept Microtechnol & Nanosci Terahertz & Millimeter Wave Lab S-41296 Gothenburg Sweden

Graphene field-effect transistors (GFETs) have now been around for more than a decade and their transfer characteristics extensively used for device characterization. model parameters, such as low-field charge-carrier mobility and device contact/series resistance, have often been the main interest. However, not until recently have the methods for device characterization themselves been the focus of research publications. In this article, I report on a structured methodology for extracting and validating the extracted GFET model parameter values based on the physics of FETs in general and of GFETs in particular. During the extraction process, the GFET resistance is divided into two parts, a constant part and a gate-voltage-dependent part, where the constant part often has been believed to represent the series/contact resistance. However, part of it depends on the channel length and contains first-order information about mobility degradation. Finally, I show that the main influence of the quantum capacitance can be captured by an equivalent oxide thickness (EOT) replacing the insulator thickness.

关键词： Resistance Logic gates parameter extraction Semiconductor device modeling Degradation Quantum capacitance MOSFET Charge-carrier mobility graphene field-effect transistors (GFETs) mobility degradation model parameter extraction series contact resistance

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Determining GaN HEMT Trap models from MHz Load-line Measurement - A Case Study 15

Determining GaN HEMT Trap Models from MHz Load-line Measurem...

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15th German Microwave Conference (GeMiC)

作者： Rudolph, Matthias Beleniotis, Petros Zervos, Christos Rohde, Ulrich L. Andrei, Cristina Brandenburg Tech Univ Cottbus Cottbus Germany Ferdinand Braun Inst gGmbH Leibniz Inst Hochstfrequenztech Berlin Germany

ISBN: (纸本)9783982039732

GaN HEMTs are known to suffer from trapping effects that lead to a reduction in current density depending on previously applied drain voltages. Characterization of the effect currently requires expensive fast-pulsed voltage supplies that can be synchronized with measurement. We propose a method that provides basically the same information based on a dynamic load-line measurement in the lower MHz range, speeding up the measurement process and reducing equipment cost. This paper presents a case study based on simulation of a proven advanced GaN HEMT model in order to explore the general feasibility of the concept.

关键词： Compact transistor modeling GaN model parameter extraction ASM-HEMT

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An improved small-signal model for GaN HEMTs devices

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INTERNATIONAL JOURNAL OF NUMERICAL modelLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 2024年第3期37卷

作者： Bai, Jing Zhang, Ao Cheng, Jiali Gao, Jianjun East China Normal Univ Sch Phys & Elect Sci Shanghai Peoples R China Nantong Univ Sch Transportat & Civil Engn Nantong Peoples R China Jiangsu Ocean Univ Sch Elect Engn Lianyungang Peoples R China

An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance L(ds )is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 x 100 mu m (number of gate fingers x unit gate width) in the frequency range of 0.5-40 GHz.

关键词： distributed capacitive effects gallium nitride (GaN) high electron-mobility transistor (HEMT) model parameter extraction small-signal model

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A two-step parameter extraction methodology for graphene field-effect transistors 34

A two-step parameter extraction methodology for graphene fie...

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34th IEEE International Conference on Microelectronic Test Structures (ICMTS)

作者： Jeppson, Kjell Chalmers Univ Technol Gothenburg Sweden

ISBN: (纸本)9781665485661

Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene field-effect transistors and for predicting their performance in circuit applications. For DC characterization, accurate extraction of the transconductance parameter (i.e., low-field mobility) and series resistance is of particular importance. In this paper, methods for extraction of these parameters will be discussed. A first-order mobility degradation model that can be used to separate information about mobility degradation and series resistance for a set of graphene field-effect transistors will also be discussed.

关键词： graphene field-effect transistors model parameter extraction charge-carrier mobility series resistance mobility

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Closed-Form extraction Strategy of Physically Meaningful parameters of Small-Signal HEMT models With Distributed Parasitic Capacitive Effects

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 2021年第2期69卷 1227-1237页

作者： Flores, Jaime Alberto Zamudio Kompa, Guenter Univ Kassel High Frequency Engn Dept D-34127 Kassel Germany Univ Kassel Microwave Elect Lab D-34127 Kassel Germany Scintec AG D-72108 Rottenburg Germany

In this article, closed-form physically consistent parameter extractions are presented for small-signal models with parasitic distributed capacitive effects. First, the effective gate-source, drain-source, and gate-drain capacitances of the device are obtained and partitioned into distributed capacitive elements. With the distributed capacitive network known, a novel closed-form inductance extraction is presented, and an original series-resistance extraction is also proposed, which takes into account the distributed nature of the parasitic capacitive effects in the device model. The proposed extraction strategy has been applied to a 1.2-mm GaN HEMT and an uncertainty analysis has been performed on the basis of artificial and real S-parameters, applying the measurement uncertainty model of a commercial vector network analyzer.

关键词： Distributed capacitive effects high-electron-mobility transistor (HEMT) model parameter extraction Riccati equation robustness test small-signal FET model uncertainty analysis

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SPICE Compact BJT, MOSFET, and JFET models for ICs Simulation in the Wide Temperature Range (From-200 °C to+300 °C)

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IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 2021年第4期40卷 708-722页

作者： Petrosyants, Konstantin O. Sambursky, Lev M. Kozhukhov, Maxim, V Ismail-Zade, Mamed R. Kharitonov, Igor A. Li, Bo Natl Res Univ Higher Sch Econ Moscow Inst Elect & Math Moscow 101000 Russia Russian Acad Sci Inst Design Problems Microelect Moscow 124365 Russia Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China

The temperature range of SPICE models of bipolar and field-effect transistors is extended from the standard commercial level (-60 degrees C ... + 150 degrees C) to harsh conditions level (-200 degrees C ... + 300 degrees C) for low/high-temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements to the device equivalent circuit to take into account the thermal effects. The universal automated methodology of model parameters extraction from the experimental data measured at low and high temperatures is proposed. The good agreement between simulated and measured device characteristics is achieved. The RMS error is not more than 10%-20%.

关键词： BJTs/HBTs compact transistor models device characteristics measurement experimental I-V characteristics junction field-effect transistors (JFETs) low- and high-temperature electronics model parameter extraction MOSFETs SPICE-like circuit simulators

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Research on real-time identification method of model parameters for the photovoltaic array

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APPLIED ENERGY 2023年第1期342卷

作者： Chen, Xiang Ding, Kun Yang, Hang Chen, Xihui Zhang, Jingwei Jiang, Meng Gao, Ruiguang Liu, Zengquan Hohai Univ Coll Mech & Elect Engn Changzhou 213022 Jiangsu Peoples R China Changzhou Key Lab Photovolta Syst Integrat & Prod Changzhou 213022 Jiangsu Peoples R China

Real-time identification study of model parameters has a facilitating effect on fault diagnosis and health state evaluation in photovoltaic (PV). Two effective methods for the real-time identification of PV array model parameters are proposed. Firstly, a PV array modeling method is proposed. This method is used to verify the accuracy of real-time model parameter identification. Then, an effective preprocessing method for the measured current-voltage (I-V) curves is proposed. The preprocessing method can improve the data quality of measured I-V curves, which helps improve the accuracy of the model parameter extraction. Next, the gorilla troops optimizer (GTO) is used to extract parameters of measured I-V curves. The extracted historical model parameters are the data sources for the real-time model parameter identification. Finally, the real-time parameter identification methods based on the time series prediction and the irradiance-temperature (G-T) grid searching are proposed. The root mean square error (RMSE) between the calculated I-V and measured I-V curves is one of the critical evaluation metrics. The RMSE of the time series prediction-based method ranges from 0.01A to 0.1A. The RMSE of the G-T grid searching-based method is around 0.01A. These two methods can complement each other and have good application prospects.

关键词： Photovoltaic array modeling Preprocessing model parameter extraction Real-time identification

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Determining GaN HEMT Trap models from MHz Load-line Measurement - Synthesis and Evaluation

Determining GaN HEMT Trap Models from MHz Load-line Measurem...

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16th German Microwave Conference, GeMiC 2025

作者： Beleniotis, Petros Andrei, Cristina Rohde, Ulrich L. Rudolph, Matthias Brandenburg University of Technology Cottbus-Senftenberg Germany Germany

ISBN: (纸本)9783982039749

The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology. © 2025 Institut fur Mikrowellen und Antennentechnik - IMA.

关键词： ASM-HEMT Compact modeling GaN HEMT load-line model parameter extraction

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