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检索条件"主题词=Multi-Chip Power Module"
15 条 记 录,以下是11-20 订阅
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Hierarchical Layout Synthesis and Design Automation for 2.5D Heterogeneous multi-chip power modules
Hierarchical Layout Synthesis and Design Automation for 2.5D...
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IEEE Energy Conversion Congress and Exposition
作者: Imam Al Razi Quang Le H. Alan Mantooth Yarui Peng Computer Science and Computer Engineering Department University of Arkansas Fayetteville AR US Electrical Engineering Department University of Arkansas Fayetteville AR US
multi-chip power module (MCPM) layout design automation has been identified as one of the primary research interests in the power electronics community with the advent of wide bandgap circuits. MCPM physical design re... 详细信息
来源: 评论
Constraint-Aware Algorithms for Heterogeneous power module Layout Synthesis and Reliability Optimization  6
Constraint-Aware Algorithms for Heterogeneous Power Module L...
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6th IEEE Annual Workshop on Wide Bandgap power Devices and Applications (WiPDA)
作者: Al Razi, Imam Le, Quang Mantooth, H. Alan Peng, Yarui Univ Arkansas Comp Sci & Comp Engn Dept Fayetteville AR 72701 USA Univ Arkansas Elect Engn Dept Fayetteville AR 72701 USA
A constraint-aware layout engine is developed for powerSynth to explore heterogeneous power module layout synthesis and optimization considering reliability. For this purpose, the corner stitching data structure with ... 详细信息
来源: 评论
A Double-End Sourced multi-chip Improved Wire-bonded SiC MOSFET power module Design  31
A Double-End Sourced Multi-Chip Improved Wire-bonded SiC MOS...
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31st Annual IEEE Applied power Electronics Specialists Conference and Exposition (APEC)
作者: Wang, Miao Luo, Fang Xu, Longya Ohio State Univ Dept Elect & Comp Engn Columbus OH 43210 USA
This paper proposes an improved wire-bonded design with a unique double-end sourced ( DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to ... 详细信息
来源: 评论
A Double-End Sourced multi-chip Improved Wire-bonded SiC MOSFET power module Design
A Double-End Sourced Multi-Chip Improved Wire-bonded SiC MOS...
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Annual IEEE Applied power Electronics Conference and Exposition
作者: Miao Wang Fang Luo Longya Xu Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio United States of America
This paper proposes an improved wire-bonded design with a unique double-end sourced (DES) structure for multi-chip paralleled silicon carbide (SiC) power modules. The new structure adopts two pairs of DC bus-bars to s... 详细信息
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Parasitic Extraction Procedure for Silicon Carbide power modules
Parasitic Extraction Procedure for Silicon Carbide Power Mod...
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IEEE International Workshop on Integrated power Packaging (IWIPP)
作者: Lemmon, Andrew Graves, Ryan Univ Alabama Dept Elect & Comp Engn Tuscaloosa AL 35487 USA
Parasitic impedances play a significant role in determining the achievable performance of power electronics applications based on wide band-gap semiconductors. Unlike applications based on traditional devices, this ne... 详细信息
来源: 评论