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Improved Cauer thermal network considering thermal coupling effects of multi-chip modules

IET POWER ELECTRONICS 2020年第16期13卷 3707-3716页

作者： Yuan, Weibo He, Yigang Li, Bing Zhou, Jianbo Ma, Zhiqiang Li, Chenchen Hefei Univ Technol Sch Elect Engn & Automat Hefei Peoples R China Wuhan Univ Sch Elect Engn Wuhan Peoples R China

The Cauer thermal network has made a realistic physical representation of thermal behaviour of a multi-chip module (MCM) theoretically possible. However, the traditional method assumes the heat conduction is critical, with an approximate one-dimensional heat conduction path for calculation and fixed heat spreading angle to make up for the compensation brought by the approximation. It will limit the accuracy and cause a significant error in estimating the junction temperature of MCM. In this study, the heat spreading angle in the area of two adjacent chips is studied by using a cross-section to change the problem to a two-dimensional heat transfer question. Based on the heat flow got from the results of calculation by using Fourier's law, an expression for heat spreading angle as a function of boundary conditions is given, which is capable of estimating the junction temperature by adjusting effective heat conduction area of an MCM whose thermal behaviour is seriously coupled among neighbour chips. The accuracy of the proposed method and expression is validated by both the finite-element method and experimental results and they both show a good agreement with the calculation.

关键词： heat transfer finite element analysis heat conduction temperature distribution multichip modules junction temperature MCM adjacent chips two-dimensional heat transfer question heat flow effective heat conduction area thermal behaviour neighbour chips Cauer thermal network thermal coupling effects multichip module realistic physical representation one-dimensional heat conduction path fixed heat spreading angle

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Peculiarities of multichip Micro module Frameless Design with Ball Contacts on the Flexible Board

Peculiarities of Multichip Micro Module Frameless Design wit...

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IEEE 33rd International Scientific Conference on Electronics and Nanotechnology (ELNANO)

作者： Vertyanov, D. V. Tikhonov, K. S. Timoshenkov, S. P. Petrov, V. S. Blinov, G. A. Natl Res Univ Elect Technol Dept Microelect Moscow Zelenograd Russia

ISBN: (纸本)9781467346726;9781467346696

New design and technological solution of three-dimensional multi-chip modules has been considered. Installation of bare chips on a flexible board has been done by printed circuit board assembly and external module contacts have performed in the matrix ball pins form. Test program was conducted in order to quantify the limits of the process. Application of flip-chip process to a wide range of customers particularly for 3D packaging has been discussed.

关键词： multichip module flexible board flip-chip golden ball pins three-dimensional assembly

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Multi-chip module Based GaAs MMICs Packaging for L-Band High Gain Application

Multi-chip Module Based GaAs MMICs Packaging for L-Band High...

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IEEE MTT-S International Microwave and RF Conference (IMARC)

作者： Gugulothu, Ravi Bhalke, Sangam, V Naik, Anant A. Lalkishore, K. Dasari, Ramakrishna Gallium Arsenide Enabling Technol Ctr Dept ATQC Hyderabad Telangana India Osmania Univ Univ Coll Engn Autonomous Dept Elect & Commun Engn Hyderabad Telangana India

ISBN: (纸本)9781728140407

this paper details a multi-chip module (MCM) suitable for GaAs monolithic microwave integrated circuit common control high gain block MCM package design, 3D EM simulation of the package, package fabrication and end module level execution, which includes assembly and testing under various environmental test conditions as per the space standards. This MCM package designed using three internally separated cavities for individual cavity isolation, 4-RF Ports, 10mil thin film microstrip line and optimized wire bonding interconnects, and the same package is EM simulated using a CST microwave studio. This package modelled and fabricated using kovar material. This MCM package proposed to house a chain of four amplifiers with a common gain of 69dB, 2 SPDT switches with insertion loss of 3.6dB, a digital attenuator with initial attenuation of 2.5dB with TTL driver and 2 thermopads of 3dB individual attenuation. This package resonating frequency is 7.484GHz. The packaged MCM measurements are carried out over a frequency of 1.1GHz-1.4GHz and resulted with S-21 of 60dB, S11&S-22 of better than 15dB and P-1dB out of 15dBm.

关键词： Amplifiers SPDT DA TTL driver Ceramics GaAs MMIC Package multichip module

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Peculiarities of multichip Micro module Frameless Design with Ball Contacts on the Flexible Board

Peculiarities of Multichip Micro Module Frameless Design wit...

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IEEE International Scientific Conference Electronics and Nanotechnology

作者： D. V. Vertyanov K. S. Tikhonov S. P. Timoshenkov V. S. Petrov G. A. Blinov Department of Microelectronics National Research University of Electronic Technology Moscow Zelenograd Russia Scientific-research Institute Microdevices&Technology Moscow Zelenograd Russia

ISBN: (纸本)9781467346696

关键词： multichip module Flexible board Flip-chip Golden ball pins Three-dimensional assembly

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From Chip to Cloud: Optical Interconnects in Engineered Systems

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JOURNAL OF LIGHTWAVE TECHNOLOGY 2017年第15期35卷 3103-3115页

作者： Krishnamoorthy, Ashok V. Thacker, Hiren D. Torudbakken, Ola Mueller, Shimon Srinivasan, Arvind Decker, Patrick J. Opheim, Hans Cunningham, John E. Shubin, Ivan Zheng, Xuezhe Dignum, Marcelino Raj, Kannan Rongved, Eivind Penumatcha, Raju Oracle Networking Syst San Diego CA 92121 USA Axalume Inc San Diego CA 92127 USA Oracle BMCS San Diego CA 92121 USA Tech301 Engn San Diego CA 92122 USA Cisco Syst San Jose CA 95134 USA Oracle Networking Syst N-0694 Oslo Norway Oracle Networking Syst Santa Clara CA 95054 USA Intel Corp Santa Clara CA 95052 USA

The high-performance server compute landscape is changing. The traditional model of building general-purpose enterprise compute boxes that end-users can configure with storage and networking to assemble their desired compute environments, has evolved to purpose-built systems optimized for specific applications. This tight integration of hardware and software components together with high-density midboard optical modules and an optical backplane allows for unprecedented levels of switching and compute efficiencies and has fueled the penetration of optical interconnects deep "inside the box," particularly for switch scale-up. We briefly review earlier 40 G/port switching systems based on active optical cables, and present our newest system: An all-optically-interconnected 100 G/port 8.2 Tb/s In-finiBand packet switch ASIC with 41 ports running 100 Gb/s per port interconnected by 12-channel midboard optical transceivers with 25 Gb/s per channel per direction of optical I/O. Using a blind-mate optical backplane, these components enable systems with up to 50 Tb/s bandwidth in a 2U standard rack mount configuration with industry-leading density, efficiency, and latency. For even tighter co-integration of optical interconnects with switch and processor ASICs, we discuss photonic multichip module and interposer packaging technologies that will further improve system energy efficiencies and overcome impending system I/O bottlenecks.

关键词： Datacenters interposer optoelectronics optical interconnections optical communications optical receivers optical transmitters multichip module switching VCSELs silicon photonics WDM

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Millimeter-Wave Surface Mount Technology for 3-D Printed Polymer multichip modules

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IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 2015年第2期5卷 201-206页

作者： Merkle, Thomas Goetzen, Reiner Sony Technol Ctr D-70327 Stuttgart Germany MicroTEC Gesell Mikrotechnol mbH D-47057 Duisburg Germany

Board level integration of novel all-in-polymer 3-D printed multichip modules process (MCM-P) at millimeter-wave frequencies is presented. The modules were manufactured using additive 3-D printing technologies based on mask-defined gradual photopolymerization in the z-direction. A lead frame structure was introduced resulting in a quad-flat no-lead footprint of 0.5-mm pitch. The front-side of the modules integrated transmission lines of the centered stripline type for interconnecting embedded millimeter-wave monolithic integrated circuits up to D-band (110-170 GHz). Broadband surface mount transitions from the MCM-P front-side interconnection layers to a high-frequency printed circuit board (PCB) were investigated. Dual channel test modules were characterized in back-to-back configuration, representing the integration needs of millimeter-wave multiple-input-multiple-output systems. The de-embedded PCB transition exhibited an insertion loss of less than 2 dB up to 75 GHz and less than 1 dB up to 60 GHz with a return loss better than 10 dB.

关键词： 3-D integration 3-D printing millimeter-wave multichip module quad-flat no-lead (QFN) surface mount technology (SMT)

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Compact Three-Dimensional Four-Way Vectorial Steering module for K_a-Band Multiple Feeds-per-Beam Satellite Payload Applications

Compact Three-Dimensional Four-Way Vectorial Steering Module...

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IEEE MTT-S International Microwave Symposium (IMS)

作者： Spira, Steffen Schneider, Michael Welker, Tilo Mueller, Jens Hein, Matthias A. Tech Univ Ilmenau Inst Micro & Nanotechnol D-98684 Ilmenau Germany Airbus DS GmbH D-81663 Munich Germany

ISBN: (纸本)9781509006984

A compact three-dimensional four-way vectorial steering module using low-temperature co-fired ceramics multi-layer technology, hybrid-integrated with monolithic microwave integrated circuits, for flexible satellite payloads operating in the K-a-band downlink frequency range of 17-22 GHz is presented. The module features digitally controllable actuators and hermetic sealing at a compact size of 26 mm x 44.5 mm x 4.4 mm. For feeding the module with a single input signal, a one-stage four-way Wilkinson power divider was designed incorporating buried resistors, fabricated, and measured. The divider exhibits a measured return loss of better than 13 dB at the input port and 16 dB at the output ports. The output port isolation exceeds 20 dB, the transmission phase difference remains below 3.1 degrees, and the insertion loss is less than 1.2 dB. The vectorial microwave parameters of the module can be adjusted by 344 degrees for phase and 15.5 dB for amplitude, with 5-bit resolution, and at step sizes of 11.25 degrees and 0.5 dB, respectively. The measured results show that the RMS phase and amplitude errors remain below 3.8 degrees and 0.23 dB.

关键词： Attenuator beam forming network (BFN) low-temperature co-fired ceramics multichip module phase shifter power divider satellite communications

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Electroplated Copper for Heterogeneous Die Integration

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IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY 2015年第7期5卷 895-901页

作者： Kierzewski, Iain M. Boteler, Lauren Bedair, Sarah S. Meyer, Christopher D. Hanrahan, Brendan M. Lazarus, Nathan Adelphi Lab Ctr Gen Tech Serv Inc Army Res Lab Adelphi MD 20783 USA Adelphi Lab Ctr US Army Res Lab Adelphi MD 20783 USA

This paper introduces a heterogeneous die integration process using electroplated copper to mount a bare die into a silicon handling wafer while simultaneously forming vertical, through-wafer vias. Deep reactive-ion etching is used to form openings in the handling wafer allowing the die to be flush-mounted for minimal device thickness. The backsides of the support wafer and die are coated by copper sputtering and electroplating, which physically secures the die in place. Electrical isolation is achieved through passivation of the silicon handle wafer sidewalls before copper electroplating. Wet thermal oxide growth was chosen over plasma-enhanced chemical vapor deposition as the sidewall passivation technique, as wet thermal oxide was found to yield superior coverage and uniformity. Topside interconnects were realized using a previously established thick-film copper metallization process. A 3 x 3 die array was successfully produced and tested for die-to-die connectivity. Thermal modeling of the fabricated devices showed that power densities up to 1 W/cm(2) could be accommodated while keeping the maximum temperature below 85 degrees C.

关键词： Copper multichip module through-silicon vias (TSVs) wafer scale integration

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Electro-optical strength assessment of white LEDs multichip modules for automotive forward-lighting application: failure analysis and packaging influence

Electro-optical strength assessment of white LEDs multichip ...

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19th European Microelectronics Packaging Conference (EMPC)

作者： Chambion, B. Mendizabal, L. Bechou, L. Gasse, A. Deshayes, Y. Carreau, V. RENAULT 1 Ave Golf F-78084 Guyancourt France IMS Lab F-33405 Bordeaux France CEA Leti F-38054 Grenoble France

ISBN: (纸本)9782952746717

Performances of Lighting Emitting Diode (LED) are now suitable for automotive high beam / low beam lighting applications. Due to high brightness light sources needs in automotive, LEDs are packaged in multichip module (e. g. 4 chips in series), to deliver up to 1000 lumens at 1A. Currently, different packaging strategies have been implemented in term of chip configuration, bonding, down conversion phosphor layer and mechanical protection to optimize performances. Beyond the performances, and from an automotive point of view, it is crucial to know the exact behavior and reliability of these optoelectronic devices in an automotive context. Current reference documents such as automotive regulations and qualification test (Automotive Electronics Council, AEC-Q101) do not take all of the automotive mission profile into consideration. In this context, a methodology is proposed to define and anticipate failure behaviors of each LEDs module through a robustness study (over-stress). A setup measurement has been developed focusing on the monitoring of electrical, optical, and thermal parameters of these modules during thermal and electrical step-stress robustness tests. A specific methodology and physical measurement issues on a multichip configuration are detailed. Indeed, these new multichip optoelectronic devices force to overall characterizations (chips in series) and drive the emergency of a new behavior to be considered, the partial failure: how could we estimate the failure of a single chip into a multichip configuration? Secondly, based on these results, we extract the strength and weakness of each LEDs module packaging strategy against thermal or electrical over-shots allowing defining a safe operating area of such devices. Failure modes, failure mechanisms and related physical phenomena are investigated considering the overall LEDs module architecture.

关键词： LED multichip module packaging automotive robustness failure

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Low-Voltage AC Drive Based on Double-Sided Cooled IGBT Press-Pack modules

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IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS 2012年第6期48卷 2140-2146页

作者： Kicin, Slavo Laitinen, Matti Haederli, Christoph Sikanen, Jukka Grinberg, Roman Liu, Chunlei Fabian, J. -H. Hamidi, Amina ABB Switzerland Corp Res CH-5405 Baden Switzerland ABB Oy Power Elect Technol FI-00381 Helsinki Finland

We present a feasibility study of low-voltage drives based on double-sided cooled power modules. A novel press-pack module was developed, and an inverter was built up subsequently. The drive was benchmarked with a 400... 详细信息

关键词： Cooling multichip module semiconductor device packaging thermal management variable-speed drives

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