The first observation of spatial optical solitons in the semiconductor AlGaAs is reported. Operating in the spectral region close to half the bandgap allows the positive nonlinearity of the semiconductor to be fully u...
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The first observation of spatial optical solitons in the semiconductor AlGaAs is reported. Operating in the spectral region close to half the bandgap allows the positive nonlinearity of the semiconductor to be fully used, while minimising the effects of two-photon absorption.
Silver nanocluster formation is promoted in opticalwaveguides by implanting silver ions on potassium-sodium ion-exchanged glass waveguides. optical methods are used to detect the cluster formation and to study the ch...
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Silver nanocluster formation is promoted in opticalwaveguides by implanting silver ions on potassium-sodium ion-exchanged glass waveguides. optical methods are used to detect the cluster formation and to study the change in the waveguiding properties.
The authors describe the reliability of silica-based PLC 1 x 8 splitters, which was investigated with reference to the Bellcore requirements. All of the 19 1 x 8 splitters that were tested satisfy the Bellcore optical...
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The authors describe the reliability of silica-based PLC 1 x 8 splitters, which was investigated with reference to the Bellcore requirements. All of the 19 1 x 8 splitters that were tested satisfy the Bellcore optical criteria after 5000h at 75-degrees-C and 90% RH.
A ferroelectric-domain-inverted grating was fabricated by electron beam scanning in LiNbO3. A waveguide second harmonic generation (SHG) device with the grating was fabricated and demonstrated for the first time. The ...
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A ferroelectric-domain-inverted grating was fabricated by electron beam scanning in LiNbO3. A waveguide second harmonic generation (SHG) device with the grating was fabricated and demonstrated for the first time. The experiments were performed using a CW-Nd: YAG laser, and normalised SHG conversion efficiency of 50%/W was obtained.
A hollow waveguide whose bore size is 250 mu m in diameter is fabricated by depositing a dielectric and a metal layer inside a thin-wall silica tube. This small bore waveguide has an advantage over the larger bore gui...
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A hollow waveguide whose bore size is 250 mu m in diameter is fabricated by depositing a dielectric and a metal layer inside a thin-wall silica tube. This small bore waveguide has an advantage over the larger bore guides in that it maintains a nearly pure HE(11) mode of a CO2 laser even when it is bent to small radii.
A 0.98 mum laser-diode-pumped waveguide amplifier is successfully realised by using an Er-doped silica-based planar lightwave circuit. The highest signal gain of 9.4 dB is achieved at a signal wavelength of 1.533 mum ...
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A 0.98 mum laser-diode-pumped waveguide amplifier is successfully realised by using an Er-doped silica-based planar lightwave circuit. The highest signal gain of 9.4 dB is achieved at a signal wavelength of 1.533 mum with a pump power of 99 mW, using a highly efficient erbium-doped waveguide and high power laser diodes.
Ion implantation has been used to produce very low loss opticalwaveguides in lead germanate glass samples. There is an increase in the refractive index of 0-35% for the given ion beam parameters. The loss can be as l...
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Ion implantation has been used to produce very low loss opticalwaveguides in lead germanate glass samples. There is an increase in the refractive index of 0-35% for the given ion beam parameters. The loss can be as low as 0.15 dB/cm after thermal annealing.
Polarisation-independent operation of an unstrained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported. Contrast ratios of 20 and 30 dB for 400 mum long devices have been achieved at 2.0 and 5.5...
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Polarisation-independent operation of an unstrained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported. Contrast ratios of 20 and 30 dB for 400 mum long devices have been achieved at 2.0 and 5.5V reverse bias voltage, respectively, with on-state attenuation less that 2 dB and at 1.55 mum wavelength. Polarisation sensitivity at these voltage values is found vanish.
Planar waveguides of erbium doped ZnF, on MgF2 substrates have been grown using molecular beam epitaxy and channel waveguides have been formed by ion milling. By exciting individual channels with an 800 nm pump, stron...
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Planar waveguides of erbium doped ZnF, on MgF2 substrates have been grown using molecular beam epitaxy and channel waveguides have been formed by ion milling. By exciting individual channels with an 800 nm pump, strong upconversion fluorescence has been generated at 410, 550 and 670 nm and at numerous weaker peaks. The fabrication technique can be adapted to semiconductor substrates for making compact diode-pumped visible and infra-red lasers.
An anomalous refractive index change in proton-exchanged LiNbO3 opticalwaveguides formed at the benzoic acid melt after annealing has been observed and explained.
An anomalous refractive index change in proton-exchanged LiNbO3 opticalwaveguides formed at the benzoic acid melt after annealing has been observed and explained.
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