Cerium dioxide thin film opticalwaveguides were fabricated by an RF magnetron sputtering process. The films were deposited on glass substrates and on silicon dioxide layers grown on silicon substrates. optical loss m...
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Cerium dioxide thin film opticalwaveguides were fabricated by an RF magnetron sputtering process. The films were deposited on glass substrates and on silicon dioxide layers grown on silicon substrates. optical loss measurements for the fabricated waveguides are reported. It is seen that the volume losses in the films were fairly high compared with the surface losses.
It is demonstrated through numerical simulations that light is strongly localized in opticalwaveguides with an aperiodic grating. The proposed system is actually achievable by applying recent microfabrication techniq...
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It is demonstrated through numerical simulations that light is strongly localized in opticalwaveguides with an aperiodic grating. The proposed system is actually achievable by applying recent microfabrication techniques. Our results provide insight into the modeling and design of opticalwaveguides for observing the strong localization of light.
The relative scattering losses due to rough rib sidewalls in single and double heterostructure rib waveguides are investigated theoretically. We find that double heterostructures exhibit at least as much scattering lo...
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The relative scattering losses due to rough rib sidewalls in single and double heterostructure rib waveguides are investigated theoretically. We find that double heterostructures exhibit at least as much scattering loss as single heterostructures, provided that such comparisons are made among structures with comparable bend performance.
An approximate analysis of the generalised waveguide dispersion characteristics (GWDC) of optical channel waveguides based on the effective index (EI) method is presented. As an illustration of its practical applicati...
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An approximate analysis of the generalised waveguide dispersion characteristics (GWDC) of optical channel waveguides based on the effective index (EI) method is presented. As an illustration of its practical applications, the possibility of achieving temperature-independence in glass rib waveguides is studied and predicted for the first time which may have important applications for integrated-optic devices requiring temperature-stabilised operations.
A novel method for the fabrication of optical slab waveguides is presented. After growth of the base cladding by thermal oxidation and deposition of the core layer of the waveguide by PECVD of SiO(x), the top cladding...
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A novel method for the fabrication of optical slab waveguides is presented. After growth of the base cladding by thermal oxidation and deposition of the core layer of the waveguide by PECVD of SiO(x), the top cladding layer is formed from the core layer material by an additional thermal oxidation which transforms SiO(x) into SiO2. With this simple technology, contaminations and rough interfaces between core and cladding are avoided. Low propagation losses and good matching to optical fibres are achieved.
The loss distributions in silica-based waveguides are successfully measured using a jaggedness-free optical low coherence reflectometer (OLCR). The OLCR reduces the unavoidable jagged fluctuations which appear in Rayl...
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The loss distributions in silica-based waveguides are successfully measured using a jaggedness-free optical low coherence reflectometer (OLCR). The OLCR reduces the unavoidable jagged fluctuations which appear in Rayleigh backscattering measurements undertaken with conventional OLCRs to within +/-1dB by averaging the wavelength-dependent Rayleigh backscatter signals. Constant loss distributions and a step-like loss increase in the waveguides were clearly observed.
All-optical phase modulation of 10 mu m wavelength radiation based on photoinduced intersub-band birefringence in a GaAs/AlGaAs quantum well waveguide is demonstrated. The undoped multiquantum well layer is inserted i...
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All-optical phase modulation of 10 mu m wavelength radiation based on photoinduced intersub-band birefringence in a GaAs/AlGaAs quantum well waveguide is demonstrated. The undoped multiquantum well layer is inserted in an infra-red slab waveguide. Band-to-band optical pumping is used to activate the infra-red intersub-band absorption and dispersion. As a result, TM and TE infra-red guiding modes present different attenuation and phase retardation as a function of the optical pump power. Photoinduced phase retardation between TM and TE modes of 20 degrees has been measured with a pump power as low as 40mW. Applications to efficient all-optical phase modulation devices are discussed.
To establish three-dimensional dense interconnects in integrated photonic circuits, a new stacked configuration of ARROW waveguide is developed. The crosstalk-free propagation and power exchange in the stacked ARROW-B...
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To establish three-dimensional dense interconnects in integrated photonic circuits, a new stacked configuration of ARROW waveguide is developed. The crosstalk-free propagation and power exchange in the stacked ARROW-B waveguides are experimentally demonstrated.
A 3-D split-step finite-element method is used for the numerical investigation of optical switching in two-core nonlinear active directional couplers made of high concentration erbium doped silica waveguides. The Lett...
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A 3-D split-step finite-element method is used for the numerical investigation of optical switching in two-core nonlinear active directional couplers made of high concentration erbium doped silica waveguides. The Letter shows that optical switching at 1532 nm can be controlled by changing the input pump power at 980 nm.
The realisation of a low-loss, highly efficient, singlemode optical phase modulator in SOI is reported. At a wavelength of 1.5 mu m the figure of merit For the device, the induced phase shift per volt per millimetre, ...
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The realisation of a low-loss, highly efficient, singlemode optical phase modulator in SOI is reported. At a wavelength of 1.5 mu m the figure of merit For the device, the induced phase shift per volt per millimetre, is greater than 200 degrees/V/mm. To our knowledge, this is the highest reported value to date. In addition, the device drive current (< 10mA) is thought to be the lowest yet reported.
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