Integrated Circuit (IC) technology is changing in multiple ways: 193i to EUV exposure, planar to non-planar device architecture, from single exposure lithography to multiple exposure and DSA patterning etc. Critical d...
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ISBN:
(纸本)9780819499738
Integrated Circuit (IC) technology is changing in multiple ways: 193i to EUV exposure, planar to non-planar device architecture, from single exposure lithography to multiple exposure and DSA patterning etc. Critical dimension (CD) control requirement is becoming stringent and more exhaustive: CD and process window are shrinking., three sigma CD control of < 2 nm is required in complex geometries, and metrology uncertainty of < 0.2 nm is required to achieve the target CD control for advanced IC nodes (e.g. 14 nm, 10 nm and 7 nm nodes). There are fundamental capability and accuracy limits in all the metrology techniques that are detrimental to the success of advanced IC nodes. Reference or physical CD metrology is provided by CD-AFM, and TEM while workhorse metrology is provided by CD-SEM, Scatterometry, Model Based Infrared Reflectrometry (MBIR). Precision alone is not sufficient moving forward. No single technique is sufficient to ensure the required accuracy of patterning. The accuracy of CD-AFM is similar to 1 nm and precision in TEM is poor due to limited statistics. CD-SEM, scatterometry and MBIR need to be calibrated by reference measurements for ensuring the accuracy of patterned CDs and patterningmodels. There is a dire need of measurement with < 0.5 nm accuracy and the industry currently does not have that capability with inline measurments. Being aware of the capability gaps for various metrology techniques, we have employed data processing techniques and predictive data analytics, along with patterningsimulation and metrology models, and data integration techniques to selected applications demonstrating the potential solution and practicality of such an approach to enhance CD metrology accuracy. Data from multiple metrology techniques has been analyzed in multiple ways to extract information with associated uncertainties and integrated to extract the useful and more accurate CD and profile information of the structures. This paper presents the optimizati
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