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检索条件"主题词=Pulse Code Modulation"
553 条 记 录,以下是191-200 订阅
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Design of decoding circuits of high speed PCM data
Design of decoding circuits of high speed PCM data
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2010 International Conference on Computer Application and System Modeling, ICCASM 2010
作者: Xiaoyan, Yan Hong, Yu Key Laboratory of Instrumentation Science and Dynamic Measurement Ministry of Education North University of China Tai Yuan 030051 China Electronic and Information Engineering Institute Qiongzhou University Wuzhishem Hainan 572200 China
The Design and realization of decoding circuits for PCM telemetry signals is introduced in the paper. The system accomplished the mission of decoding high - speed difference PCM signal received, and recording data by ... 详细信息
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PHASE-CHANGE TECHNOLOGY AND THE FUTURE OF MAIN MEMORY
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IEEE MICRO 2010年 第1期30卷 131-141页
作者: Lee, Benjamin C. Zhou, Ping Yang, Jun Zhang, Youtao Zhao, Bo Ipek, Engin Mutlu, Onur Burger, Doug Stanford Univ VLSI Res Grp Stanford CA 94305 USA Univ Pittsburgh Dept Elect & Comp Engn Pittsburgh PA 15260 USA Univ Rochester Rochester NY 14627 USA Carnegie Mellon Univ Pittsburgh PA 15213 USA
Phase-change memory may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than dram this article discusses how to mitigate these limi... 详细信息
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Model Parameters Estimation of PEM Fuel-Cell Systems using Genetic Algorithms
Model Parameters Estimation of PEM Fuel-Cell Systems using G...
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2010 IEEE International Conference on Industrial Technology (ICIT 2010)
作者: Pucci Marcello Zanchetta Pericle Wireless Communication Laboratory Posts and Telecommunications Institute of Technology Vietnam UK
This paper presents a novel Fuel Cell (FC) model parameters estimation method based on a Genetic Algorithms (GAs) heuristic optimization approach, a theoretical model and experimental measurements. The experimental be... 详细信息
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A Compact Model for Phase Change Memory Based on Carrier Transport Mechanism
A Compact Model for Phase Change Memory Based on Carrier Tra...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)
作者: Laidong Wang Yiqun Wei Wei Wang Ling Wang Xinnan Lin Jin He The Key Laboratory of Integrated Microsystems School of Computer & Information Engineering Peking University Shenzhen Graduate School Shenzhen 518055 P. R. China Peking University Shenzhen SOC Key Laboratory PKU HKUST Shenzhen Institute Hi-Tech Industrial Park South Shenzhen 518057 P.R. China
In this paper, a compact model for phase change memory (PCM) based on carrier transport mechanism is presented. In this model, the set and reset resistances of the cell are calculated through the traditional transport... 详细信息
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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)
Recent Progress of Phase Change Memory (PCM) and Resistive S...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)
作者: Yi Wu Sang Bum Kim Shimeng Yu Jiale Liang H.-S. Philip Wong Rakesh Gnana David Jeyasingh Byoungil Lee Marissa A. Caldwell Dept. of Electrical Engineering and Center for Integrated Systems Stanford University Stanford CA Dept. of Chemistry and Center for Integrated Systems Stanford University Stanford CA 94305 USA
Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive c... 详细信息
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Thermal physical model for Ge2Sb2Te5 phase change memory in electrical memory device
Thermal physical model for Ge2Sb2Te5 phase change memory in ...
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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)
作者: Daolin Cai Zhitang Song Houpeng Chen State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 People's Republic of China
In order to calculate the temperature of the phase change memory (PCM) cell, a thermal physical model of the PCM device having Ge2Sb2Te5 (GST) layer has been proposed and demonstrated. By calculating and comparing wit... 详细信息
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Control Strategies for a Fuel-Cell Hybrid Tramway
Control Strategies for a Fuel-Cell Hybrid Tramway
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2010 IEEE International Conference on Industrial Technology (ICIT 2010)
作者: P. Garcia J. Perez L. M. Fernandez C.A. Garcia F. Jurado Department of Electrical Engineering University of Cadiz EPS Algeciras Cadiz Spain Department of Electrical Engineering University of Jaen EPS Linares Jaen Spain
This paper compares two control configurations for a fuel cell (FC)-battery powered hybrid system for the Metro-Centro tramway (800 kW) from Seville, Spain. Besides, modeling of each components is briefly presented. T... 详细信息
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Preparation and properties of microencapsulated PCMs for textile by the method of microemulsion
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Spring Conference of the Fiber-Society
作者: Zhang Jin Zou Liming Tan Ying Xu Su Zhong Lei Donghua Univ State Key Lab Modificat Synth Fibers & Polymer Ma Shanghai 200051 Peoples R China
@@PCMs could be applied to the storge of energy and temperature control widely, owing to it can release and storage a large amount of potential thermal energy in phase change[1][2].After decades of development, PCMs h... 详细信息
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Improved error performance in SOQPSK modulation using a ternary symbol encoder
Improved error performance in SOQPSK modulation using a tern...
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45th Annual International Telemetering Conference and Technical Exhibition - Disruptive Technologies and Their Impact on Telemetry, ITC/USA 2009
作者: Counsil, David T. Punnoose, Ratish J. Sandia National Laboratories P.O. Box 969 Livermore CA 94551 United States
Telemetry transmissions have been evolving over the recent years from PCM/FM to other constant envelope modulation schemes such as SOQPSK and multi-h CPM. These newer modulations schemes have better spectral efficienc... 详细信息
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Achieving Multiple Resistance States in Phase-Change Memory Cell
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JAPANESE JOURNAL OF APPLIED PHYSICS 2009年 第7期48卷 074501-074501页
作者: Wang, Ke Han, Xiao Dong Zhang, Ze Wu, Liang Cai Liu, Bo Song, Zhi Tang Feng, Song Lin Beijing Univ Technol Inst Microstruct & Property Adv Mat Beijing 100022 Peoples R China Chinese Acad Sci Lab Nanotechnol Shanghai Inst Microsyst & Informat Technol Shanghai 200050 Peoples R China
Ge2Sb2Te5 (GST)-based phase-change random access memory (PCM) cells were successfully fabricated by a standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) process. The bottom electrode contacts (BECs) of ... 详细信息
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