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Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor

SOLID-STATE ELECTRONICS 2025年 226卷

作者： Cho, Jung Rae Park, Jingyu Myoung, Seung Joo Yang, Tae Jun Kim, Changwook Bae, Jong-Ho Choi, Sung-Jin Kim, Dong Myong Song, Ickhyun Kim, Dae Hwan Kookmin Univ Sch Elect Engn Seoul 02707 South Korea Hanyang Univ Dept Elect Engn Seoul 04763 South Korea

This paper proposes a new reconfigurable logic circuits based on InGaZnO resistive random-access memory (ReRAM) and presents a comprehensive investigation of their electrical characteristics and logic operation. Two fundamental equations that govern the transport mechanism of oxygen ions were utilized to model the formation of lateral and vertical conducting filaments in ReRAM devices in a circuit simulation environment. Based on the device models, the electrical behavior of ReRAM was examined and verified, using circuit simulators. Experimental results from dc current-voltage and pulse measurements of ReRAM and thin-film transistors (TFTs) demonstrate their electrical switching characteristics. The paper analyzes and validates the operation of two ReRAM-based logic configurations: 1 T-1 M (one transistor and one ReRAM cell) and 2 T-2 M-INV (inverter). A detailed analysis were conducted to compare the proposed ReRAM-based logic with the conventional CMOS counterparts, revealing favorable advantages in reducing transistor counts and die areas. The 1 T-1 M and 2 T-2 M-INV exhibit reconfigurable logic operations under different resistive states of ReRAM cells. Additionally, the investigations of short-circuit current profiles shows the superior performance of ReRAM-based logic gates to the CMOS counterpart in terms of power consumption. Overall, this study investigates the feasibility of ReRAMbased reconfigurable logic circuits for future low-power and high-performance computing applications.

关键词： InGaZnO Thin-film transistor Power analysis reconfigurable logic Resistive random-access memory State switching

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FPGA-Implemented reconfigurable logic Locking Using N-Stage Delays for Obfuscation

FPGA-Implemented Reconfigurable Logic Locking Using N-Stage ...

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IEEE Students' Conference on Electrical, Electronics and Computer Science (SCEECS)

作者： Saurabh Srivastava Sangeeta Nakhate Dept. of ECE Maulana Azad National Institute of Technology Bhopal India

ISBN: (数字)9798331529833

ISBN: (纸本)9798331529840

System security is becoming an increasingly essential feature of modern computing systems, particularly programmable hardware such as Field Programmable Gate arrays (FPGA), employed in various applications such as autonomous systems and digital networks. However, safeguarding FPGA-based devices against IP theft and reverse engineering is difficult and a big concern for the semiconductor and defense industries. Previously, various obfuscation approaches such as gate level obfuscation, camouflaging, and strong puff were employed to make a distinct key for every chip. These designs, however, are more area-intensive, consume more power, and are easier to crack the key. In this research, we propose a novel obfuscation idea that integrates a reconfigurable hardware obfuscation block into the original circuit with an additional N-stage Delay circuit to enhance overall system security and resistance to threats. The present idea relates to the increase in the security of the system against the piracy, overbuilding and from the cloning and camouflaging of the chip. The proposed technique does not have any bulky circuit, and it is easily realizable and just requires some additional modules that can easily reconfigured with a very smaller area and power overhead thereby offering performance benefits and increasing the time of sat attack iteration, making the locking system more complex and difficult to decode.

关键词： Resistance Power measurement Defense industry Hardware security Reverse engineering reconfigurable logic logic gates Delays IP networks Field programmable gate arrays

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Optical Learning and reconfigurable logic Utilizing Halide Perovskite Thin Film Transistors

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SMALL 2025年 e2409373页

作者： Nirmal, Amoolya Tay, Darrell Jun Jie Yantara, Natalia Timothy, Si En Ng Sharma, Divyam Tay, Yeow Boon Mathews, Nripan Nanyang Technol Univ Sch Mat Sci & Engn Singapore 639798 Singapore Nanyang Technol Univ Energy Res Inst Nanyang Technol Univ ERI N Singapore 637553 Singapore Nanyang Technol Univ Grad Coll Interdisciplinary Grad Programme IGP Singapore 637460 Singapore

Metal halide perovskites with their superior electronic properties, solution processibility, and scalability, are promising candidates for optoelectronic applications such as solar cells and LEDs. Although of importance for ubiquitous, intelligent electronics, reports on the application of thin film transistors (TFTs) fabricated from perovskites are sparse, primarily due to operational conditions limitations and stability issues. Precise control of composition, microstructure as well as novel chemical treatments have been proposed as solutions to this quandary. Here, a room temperature operational n-type solution-processed Cs0.05(MA0.15FA0.7)Pb(Br0.5I2.4) triple cation transistor enabled using tin-doped indium oxide as source/drain contacts is reported. Optical learning is demonstrated by exploiting the inherent photo response of the perovskite channel and gate bias modulation capability of such perovskite TFT optical pixels. The pixels show modulatable learning and forgetting behavior as demonstrated by the training of alphabets. Noise-free optoelectronic relearning is also demonstrated. Finally, the intelligent transistor is also utilized to demonstrate reconfigurable logic, switchable between 'OR' and 'AND' states, demonstrating the versatility of the halide perovskite pixel.

关键词： optical learning reconfigurable logic thin film transistors triple cation perovskite

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One-Ferroelectric-Tunnel-FET-Based reconfigurable logic Gates

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2025年

作者： Yeom, Jaemin Ryu, Minjeong Woo, Jae Seung Lee, Jin Wook Kim, Seonggeun Go, Seungwon Kim, Sangwan Choi, Woo Young Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea Sogang Univ Dept Elect Engn Seoul 04107 South Korea

A novel reconfigurable logic gate (RLG) utilizing one ferroelectric tunnel field-effect transistor (FeTFET) is proposed for the first time. By leveraging the symmetric ambipolar current of the TFET and the minor loop behavior of the ferroelectric, NAND/OR/XNOR/IMP/RIMP operations are performed within a single FeTFET, enabling logic-in-memory (LiM) with high area efficiency. It is demonstrated that two inputs can be programmed in two steps, and the type of logic operation can be changed by simply altering the read voltage. The proposed FeTFET-based RLGs consume >99% lower operation energy than FeFET-based ones.

关键词： logic logic gates FeFETs Voltage reconfigurable logic TFETs logic arrays Junctions Tunneling Silicon-on-insulator Ferroelectric tunnel FET (FeTFET) logic-in-memory (LiM) reconfigurable logic gate (RLG)

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reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure

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Nano Research 2024年第4期17卷 3113-3119页

作者： Fan Gong Wenjie Deng Yi Wu Fengming Liu Yihao Guo Zelin Che Jingjie Li Jingzhen Li Yang Chai Yongzhe Zhang Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Department of Applied Physics Hong Kong Polytechnic UniversityKowloonHong KongChina

reconfigurable devices can be used to achieve multiple logic operation and intelligent optical sensing with low power consumption,which is promising candidates for new generation electronic and optoelectronic integrated ***,the versatility is still limited and need to be extended by the device architectures ***,we report an asymmetrically gate two-dimensional(2D)van der Waals heterostructure with hybrid dielectric layer SiO_(2)/hexagonal boron nitride(h-BN),which enable rich function including reconfigurable logic operation and in-sensor information encryption enabled by both volatile and non-volatile optoelectrical *** the partial gate is grounded,the non-volatile light assisted electrostatic doping endowed partially reconfigurable doping between n-type and p-type,which allow the switching of logic XOR and not implication(NIMP).When the global gate is grounded,additionally taking the optical signal as another input signal,logic AND and OR is realized by combined regulation of the light and localized gate *** on the high on/off current ratio approaching 105 and reliable&switchable logic gate,in-sensor information encryption and decryption is demonstrated by manipulating the logic ***,these results provide strong extension for current reconfigurable electronic and optoelectronic devices.

关键词： in-sensor encryption reconfigurable logic van der Waals heterostructure asymmetrical tunable architecture

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reconfigurable logic for carry-out computing in 1-bit full adder using a single magnetic tunnel junction

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SOLID-STATE ELECTRONICS 2019年 154卷 16-19页

作者： Bae, Gi Yoon Hwang, Yechan Lee, Sangmin Kim, Taewan Park, Wanjun Hanyang Univ Dept Elect Engn Seoul 133791 South Korea Sejong Univ Dept Mat Engn Seoul 143747 South Korea

We propose a method for reconfigurable logic using a single magnetic tunnel junction (MTJ) as the main computing element in the single-gate architecture. The introduction of the MTJ to reconfigurable computing provides advantages in layout efficiency, power consumption, and the device variation problem. In this study, we present a three-terminal MTJ implemented by two inputs (ampere magnetic field and spin torque-transfer current) acting as a logic element that performs the Boolean logic functions of NAND and NOR with corresponding programmable input values in a fixed architecture. In addition, the reconfigurable functionality is confirmed through demonstration of carry-out computing across the operator built with single-MTJ logic architecture.

关键词： reconfigurable logic Magnetic tunnel junction (MTJ)

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reconfigurable logic Operations via Gate Controlled Skyrmion Motion in a Nanomagnetic Device

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ACS APPLIED ELECTRONIC MATERIALS 2022年第5期4卷 2290-2297页

作者： Paikaray, Bibekananda Kuchibhotla, Mahathi Haldar, Arabinda Murapaka, Chandrasekhar Indian Inst Technol Hyderabad Dept Mat Sci & Met Engn Kandi 502284 Telangana India Indian Inst Technol Hyderabad Dept Phys Kandi 502284 Telangana India

Owing to the topological protection and the ease of efficient manipulation, skyrmions have emerged as potential candidates for carrying information in future memory and logic devices. Here, we have proposed a reconfigurable skyrmion based two-input logic device architecture. Using micromagnetic simulations, we have demonstrated that the device is capable of performing both OR and AND logic gate functionalities in a reconfigurable manner. Different logic functionality of the device is selected by using a current through a nonmagnetic metallic gate, and the resultant Oersted field controls the trajectory of the skyrmion, which in turn determines the logic states. The logic functions are implemented on a ferromagnet/heavy metal bilayer device structure by virtue of several physical effects, such as the spin-orbit torque, skyrmion-edge repulsion, skyrmion-skyrmion topological repulsion, and skyrmion Hall effect. The skyrmion trajectory has been characterized by estimating the skyrmion Hall angle. A wide range of operations by varying the current density, skyrmion velocity, Dzyaloshinskii-Moriya interaction, magnetic anisotropy, and geometrical parameters have been presented in detail. We believe that our spin orbit torque driven logic design will have potential implications for a high-speed and low-power skyrmion based computing architecture.

关键词： skyrmion reconfigurable logic skyrmion logic spin-orbit torque skyrmion Hall effect

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reconfigurable logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor

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NANO LETTERS 2023年第11期23卷 5242-5249页

作者： Sheng, Zhe Dong, Jianguo Hu, Wennan Wang, Yue Sun, Haoran Zhang, David Wei Zhou, Peng Zhang, Zengxing Fudan Univ Sch Microelect Shanghai 200433 Peoples R China Natl Integrated Circuit Innovat Ctr Shanghai 201203 Peoples R China

logic-in-memory architecture holds great promise to meetthe high-performanceand energy-efficient requirements of data-intensive scenarios. Two-dimensionalcompacted transistors embedded with logic functions are expected toextend Moore's law toward advanced nodes. Here we demonstratethat a WSe2/h-BN/graphene based middle-floating-gate field-effecttransistor can perform under diverse current levels due to the controllablepolarity by the control gate, floating gate, and drain voltages. Suchelectrical tunable characteristics are employed for logic-in-memoryarchitectures and can behave as reconfigurable logic functions ofAND/XNOR within a single device. Compared to the conventional deviceslike floating-gate field-effect transistors, our design can greatlydecrease the consumption of transistors. For AND/NAND, it can save75% transistors by reducing the transistor number from 4 to 1;forXNOR/XOR, it is even up to 87.5% with the number being reduced from8 to 1.

关键词： logic-in-memory two-dimensional materials reconfigurable logic compacted transistor

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reconfigurable logic based on Voltage-Controlled Magnetic Tunnel Junction (VC-MTJ) for Stochastic Computing 14

Reconfigurable Logic based on Voltage-Controlled Magnetic Tu...

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14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Zhang, Zuodong Zhang, Yawen Wang, Runsheng Zeng, Lang Huang, Ru Peking Univ Inst Microelect Beijing 100871 Peoples R China Beihang Univ BDBC Fert Beijing Inst Beijing 100191 Peoples R China Beihang Univ Sch Elect & Informat Engn Beijing 100191 Peoples R China

ISBN: (纸本)9781538644416

In this paper, we propose using the Voltage Controlled Magnetic Tunnel Junction (VC-MTJ) to build a kind of reconfigurable logic for stochastic computing. The output probability is controlled by the pulse current and the controlled voltage in a VC-MTJ, thus it can be used as a stochastic number generator (SNG) and/or a reconfigurable logic device under different operation modes. When the voltage is fixed and the current changes with the input, stochastic numbers can be generated while consuming less energy than the conventional MTJ;when the voltage and current change with the Boolean logic inputs 0 or 1, different logic operations can be realized, which make it suitable as a reconfigurable logic device in stochastic computing.

关键词： Voltage control Magnetic tunneling reconfigurable logic Switches Magnetic anisotropy Anisotropic magnetoresistance Generators

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reconfigurable logic Devices Connected with Laser-Sintered Liquid Metal Nanoparticles 16

Reconfigurable Logic Devices Connected with Laser-Sintered L...

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16th IEEE Sensors Conference

作者： White, Edward L. Case, Jennifer C. Kramer, Rebecca K. Purdue Univ Sch Mech Engn W Lafayette IN 47907 USA

ISBN: (纸本)9781509010127

In this paper we demonstrate the use of liquid metal nanoparticles as electrical traces between logic gates. When first deposited, films of nanoparticles are non-conductive, despite their metallic composition. Nanoparticle films can be coalesced into conductive traces using an infrared laser. We demonstrate the utility of this approach by using laser-patterned films to connect NAND gates in different circuits, creating an OR gate and a light-sensitive thermostat. We also show that patterned films can be removed, making the devices re-usable and re-programmable. Liquid metal nanoparticle-based devices may be used to create environmentally responsive devices in the future.

关键词： flexible electronics liquid metal electronics reconfigurable logic

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