In this work, two digital-to-impulse radiating chips are reported that produce and radiate electromagnetic impulses with duration of less than 10psec and repetition frequency of 10GHz. These chips are based on fully e...
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ISBN:
(纸本)9781479982721
In this work, two digital-to-impulse radiating chips are reported that produce and radiate electromagnetic impulses with duration of less than 10psec and repetition frequency of 10GHz. These chips are based on fully electronic methods;no laser is used. The first chip uses a single-ended slot-bowtie antenna with a current switch to radiate impulses with record pulse-width of 8psec and EIRP of 13dBm. The radiation of this chip is coupled to air through a silicon lens attached to the backside of the substrate. The second chip uses a differential slot-bowtie antenna with an active feed to radiate impulses with record pulse-width of 9psec and EIRP of 10dBm. Both chips are fabricated in a 130nm sige bicmos process technology.
An active ESD supply clamp for mixed voltage RF applications developed in advanced sigebicmosprocess is introduced. The clamp is designed using a three-stage architecture consisting of transient-detection, timing an...
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ISBN:
(纸本)9781479901296
An active ESD supply clamp for mixed voltage RF applications developed in advanced sigebicmosprocess is introduced. The clamp is designed using a three-stage architecture consisting of transient-detection, timing and beta-multiplication. The proposed design ensures the clamp has very low leakage even when circuits operate at supply voltages that are equal to or beyond the breakdown voltage of the core sige bipolar devices. The clamp's turn-on characteristics spans the full duration of the actual ESD events making it fully capable to effectively protect the sensitive devices in the core circuit.
The utilization of inverse-mode operation of the sige HBT in a single-pole, single-throw RF switch designed for high-linearity and high-power handling applications is investigated for the first time. By swapping the b...
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ISBN:
(纸本)9781424485796
The utilization of inverse-mode operation of the sige HBT in a single-pole, single-throw RF switch designed for high-linearity and high-power handling applications is investigated for the first time. By swapping the base-emitter junction with base-collector junction for switching, record linearity performance is obtained for sigebicmos switches at X-band frequencies, while maintaining comparable insertion loss. An IIP3 of 35 dBm and P1dB of 20 dBm is obtained while consuming 29.7 mW of dc power in the ON state. The inverse-mode switch did not show any degradation up to an RF power level of 30 dBm. The reliability mechanisms in sigebicmos RF switches is understood to be junction damage in the series-diode switching element.
An 850 mW sige power amplifier operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB of gain and 18% PAE is presented. This sige PA was implemented in a commercially-available, third-generation 130 nm 200 GHz...
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ISBN:
(纸本)9781424427253
An 850 mW sige power amplifier operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB of gain and 18% PAE is presented. This sige PA was implemented in a commercially-available, third-generation 130 nm 200 GHz sigebicmos platform using a hybrid high-breakdown / high-speed cascode pair to enhance voltage swing.
Mobile communication systems require highly efficient, linear, and integrated power amplifiers. This paper reports the results of a monolithic envelope following system implemented in a 0.18mum sigebicmosprocess tec...
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ISBN:
(纸本)0780376943
Mobile communication systems require highly efficient, linear, and integrated power amplifiers. This paper reports the results of a monolithic envelope following system implemented in a 0.18mum sige bicmos process technology. The monolithic envelope following system consists of a synchronous buck DC-DC converter, which is integrated with and provides the power supply for a 900 MHz power amplifier while tracking the envelope of the RF input signal.
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