Hysteresis phenomenon is currently met in magnetic materials characterization. From many years this hysteresis had been modeled with different approaches. The aim of this paper is to present a comparison between few s...
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ISBN:
(纸本)9781479975143
Hysteresis phenomenon is currently met in magnetic materials characterization. From many years this hysteresis had been modeled with different approaches. The aim of this paper is to present a comparison between few sigmoid functions used more often in other research areas. The functions were updated according to the requirements of the magnetic hysteresis and there comparisons for three different magnetic materials were performed. In the last part, hysteresis losses are evaluated using relative errors between experimental loop area and modeled loop area.
In the industry field, the increasingly stringent requirements of lightweight structures are exposing the ultimately nonlinear nature of mechanical systems. This is extremely true for systems with moving parts and loo...
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In the industry field, the increasingly stringent requirements of lightweight structures are exposing the ultimately nonlinear nature of mechanical systems. This is extremely true for systems with moving parts and loose fixtures which show piecewise stiffness behaviours. Nevertheless, the numerical solution of systems with ideal piecewise mathematical characteristics is associated with time-consuming procedures and a high computational burden. Smoothing functions can conveniently simplify the mathematical form of such systems, but little research has been carried out to evaluate their effect on the mechanical response of multi-degree-of-freedom systems. To investigate this problem, a slightly damped mechanical two-degree-of-freedom system with soft piecewise constraints is studied via numerical continuation and numerical integration procedures. sigmoid functions are adopted to approximate the constraints, and the effect of such approximation is explored by comparing the results of the approximate system with the ones of the ideal piecewise counter-part. The numerical results show that the sigmoid functions can correctly catch the very complex dynamics of the proposed system when both the above-mentioned techniques are adopted. Moreover, a reduction in the computational burden, as well as an increase in numerical robustness, is observed in the approximate case.
The non-polynomial THINC (tangent of hyperbola for interface capturing) scheme has been reported to show both numerical simplicity and high fidelity for resolving contact interfaces. In this paper, two types of smooth...
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The non-polynomial THINC (tangent of hyperbola for interface capturing) scheme has been reported to show both numerical simplicity and high fidelity for resolving contact interfaces. In this paper, two types of smooth sigmoid functions are employed to construct the non-polynomial reconstructions for capturing interfaces (similarly, called SFINC schemes, sigmoid functions for interface capturing). One type is that the exact jump location (a parameter introduced in the reconstruction) can be analytically calculated, and another type cannot. The algebraic function and the Gudermannian function belong to the first and the second types, respectively, and are investigated in this paper. An approximate method for calculating the jump location of the Gudermannian function is proposed. The method avoids the iteration process of determining the jump location, and hence is efficient and practical in applications. The numerical validations and comparisons of SFINC schemes are presented to show their performance for simulating complex compressible flow fields.
We study two classes of sigmoids: the simple sigmoids, defined to be odd, asymptotically bounded, completely monotone functions in one variable, and the hyperbolic sigmoids, a proper subset of simple sigmoids and a na...
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We study two classes of sigmoids: the simple sigmoids, defined to be odd, asymptotically bounded, completely monotone functions in one variable, and the hyperbolic sigmoids, a proper subset of simple sigmoids and a natural generalization of the hyperbolic tangent. We obtain a complete characterization for the inverses of hyperbolic sigmoids using Euler's incomplete beta functions, and describe composition rules that illustrate how such functions may be synthesized from others. These results are applied to two problems. First we show that with respect to simple sigmoids the continuous Cohen-Grossberg-Hopfield model can be reduced to the (associated) Legendre differential equations. Second, we show that the effect of using simple sigmoids as node transfer functions in a one-hidden layer feedforward network with one summing output may be interpreted as representing the output function as a Fourier series sine transform evaluated at the hidden layer node inputs, thus extending and complementing earlier results in this area. Copyright (C) 1996 Elsevier Science Ltd
This paper presents new methodologies for modeling static VAr compensators (SVCs) in the power flow problem. The proposed formulations utilize sigmoid functions to model the control equations that describe the steady-...
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This paper presents new methodologies for modeling static VAr compensators (SVCs) in the power flow problem. The proposed formulations utilize sigmoid functions to model the control equations that describe the steady-state behavior of SVCs. The first methodology introduces reactive power injection as a new state variable, while the second methodology utilizes the thyristor firing angle. These steady-state SVC methodologies were applied to the power flow problem using the full Newton formulation, which incorporates the control equations into the system of nonlinear equations. One of the main contributions of these proposed methodologies is that they eliminate the need for alternating adjustments concerning the operational limits of the SVC during the iterative power flow process. The implementation of a power flow program was tested on both small-scale tutorial systems and the medium-scale IEEE Nordic system. The presented results validate and demonstrate the effectiveness of the proposed methodology.
In power transistor models, it is very important that device capacitances are modelled accurately so that switching losses, EMI filter requirements and gate timing requirements of the converter can be accurately deter...
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ISBN:
(纸本)9781467395502
In power transistor models, it is very important that device capacitances are modelled accurately so that switching losses, EMI filter requirements and gate timing requirements of the converter can be accurately determined. In this paper, a modelling technique utilizing modified sigmoid functions to describe the device capacitances is applied on a GaN HEMT and a silicon MOSFET to develop their corresponding SPICE models. Comparison of switching energies of the transistors under slow-switching conditions suggest that the technique is suitable for modelling both types of transistors. The developed model for the GaN HEMT is also shown to simulate faster than the manufacturer's model under fast switching conditions.
To avoid undesired collisions and improve the level of safety and precision, artificial potential field (APF) can be employed to generate virtual forces around protected tissue and to provide surgeons with real-time f...
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ISBN:
(纸本)9781586035839
To avoid undesired collisions and improve the level of safety and precision, artificial potential field (APF) can be employed to generate virtual forces around protected tissue and to provide surgeons with real-time force refection through haptic feedback. In this paper, we propose a potential field-based force model using the generalized sigmoid function, and show that it can represent a large class of shapes. The proposed approach has several advantages such as computational efficiency, easily adjustable level of force reflection, and force continuity.
An efficient method for finding an initial approximation to a real root of nonlinear equation f(x) = 0 is proposed. The presented approach is based on numerical integration of the transform functions tanh m(f(x)), arc...
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An efficient method for finding an initial approximation to a real root of nonlinear equation f(x) = 0 is proposed. The presented approach is based on numerical integration of the transform functions tanh m(f(x)), arctan m(f(x)) (m > 0) and sgn (f(x)) of sigmoidal type. Combining numerical integration method and rapidly convergent iterative methods, we construct a hybrid method of great efficiency. The introduced sigmoid-like functions are also convenient for the detection of a cluster of zeros or a multiple zero lying in a given interval. The presented numerical examples demonstrate the feasibility and efficiency of the proposed procedures. (C) 2008 Elsevier Inc. All rights reserved.
The binary version of bio-inspired approaches is used frequently in modern digital world. We therefore propose a new kind of binary version of the equilibrium optimization algorithm which was just raised before. Causi...
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ISBN:
(纸本)9781450376426
The binary version of bio-inspired approaches is used frequently in modern digital world. We therefore propose a new kind of binary version of the equilibrium optimization algorithm which was just raised before. Causing the universal usage for sigmoid function, we carried out the simulation experiments on the values of beta parameter for sigmoid function. Results show that the value of beta should be large in the interval of 2 to 5 for most unimodal and multimodal, and even bottom flat-like benchmark functions. Unfortunately, some of the multimodal and bottom flat-like benchmark functions need smaller value of beta. Even more, some of them such as Salomon function lack the discipline for beta parameter. Conclusions could be made that specific experiment should be carried out for given problems before real application.
In power transistor models, it is very important that device capacitances are modelled accurately so that switching losses, EMI filter requirements and gate timing requirements of the converter can be accurately deter...
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ISBN:
(纸本)9781467395519
In power transistor models, it is very important that device capacitances are modelled accurately so that switching losses, EMI filter requirements and gate timing requirements of the converter can be accurately determined. In this paper, a modelling technique utilizing modified sigmoid functions to describe the device capacitances is applied on a GaN HEMT and a silicon MOSFET to develop their corresponding SPICE models. Comparison of switching energies of the transistors under slow-switching conditions suggest that the technique is suitable for modelling both types of transistors. The developed model for the GaN HEMT is also shown to simulate faster than the manufacturer's model under fast switching conditions.
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