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synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors

JOURNAL OF PHYSICS D-APPLIED PHYSICS 2020年第3期53卷 035302-035302页

作者： Liu, Chang Wang, Lai-Guo Cao, Yan-Qiang Wu, Ming-Ze Xia, Yi-Dong Wu, Di Li, Ai-Dong Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct MatColl Engn & Mat Sci & Engn DeptNatl Lab Solid State Microstr Nanjing 210093 Jiangsu Peoples R China Anqing Normal Univ Key Lab Funct Coordinat Cpds Anhui Higher Educ In AnHui Prov Key Lab Optoelect & Magnetism Funct Ma Anqing 246011 Peoples R China

In this paper, Pt/AlOx/HfOx/TiN bilayer-structure memristors were fabricated by atomic layer deposition. Some essential synaptic biological functions are achieved in such a single inorganic electronic synapse using analog resistive switching behavior. With the aid of x-ray photoelectron spectroscopy (XPS), the non-uniform distribution of oxygen vacancies in the Pt/AlOx/HfOx/TiN memristor has been confirmed. The oxygen-deficient HfOx layer has much more oxygen vacancies than the AlOx layer. In the Pt/AlOx/HfOx/TiN device, the formation/rupture of the nanoscale conductive filaments of oxygen vacancies probably occurs in the AlOx layer. The thickness of the filaments can be altered with the amplitude and width of the stimulating pulses. With the conductive filaments becoming narrower to a quantum wire, quantum conductance has been observed during the bipolar reset process of Pt/AlOx/HfOx/TiN. A memristive switching mechanism of a bilayer metal oxide synaptic device has been proposed to explain synaptic plasticity based on the oxygen vacancies migration/diffusion model.

关键词： memristor synaptic functions atomic layer deposition memristive mechanism quantum conductance

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Cordycepin and Nano-cordycepin-biotin ameliorate cognitive impairments via improving hippocampal synaptic functions in Parkinson's mice

Cordycepin and Nano-cordycepin-biotin ameliorate cognitive i...

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2019中国生理学会学术年会暨张锡钧基金第十五届全国青年优秀生理学学术论文交流会及第十三届全国青年生理学工作者学术会议

作者： Li Liu Ying-Jie Shang Zi-Fan Mai Zhao-Hui Chen Bao-Yan Wu 李楚华 School of Life Science South China Normal University College of Biophotonics South China Normal University

Background Parkinson's disease(PD) is a progressive neurodegenerative disorder that results from the loss of dopaminergic neurons in substantia nigra(SN).Abnormal aggregation of alpha-synuclein(α-syn) causes the dopaminergic neurons degeneration, further decreases the expression of tyrosine hydroxylase(TH) in *** changes of α-syn and TH are considered to be the two major representative pathological features of *** is well known that motor disorders are a group of classic symptoms of PD ***, PD also presents with various non-motor *** example, cognitive dysfunction, one of the non-motor symptoms of PD, could be observed in the early stage of *** is worth to be noted that most research focuses on motor dysfunction in PD, and few reports pay attention to cognitive impairments of ***, an active constituent from Chinese herbs Cordyceps militaris, has been shown to improve learning and memory and to protect against memory deficiencies induced by neurotoxic *** the current study, the first purpose is to investigate whether cordycepin ameliorates cognitive impairments induced by ***,previous studies have showed that cordycepin is easily degraded by adenosine deaminase(ADA) to inactive compounds in *** recent years, nano-drugs have attracted extensive attention, especially in the application of neurodegenerative diseases due to their advantages of drug delivery efficiency and drug-controlled *** that the limitations of the metabolic characteristics of cordycepin,the second purpose of this study is to synthesize a new nano-drug namely nano-cordycepin-biotin and to investigate whether it reduces the learning and memory impairments of PD *** 1-methyl-4-phenyl-1, 2, 3, 6-tetrahydropyridine(MPTP) was used to establish an in vivo(30 mg/kg, once a day for 8 days, intraperitoneal injection) PD model in mice and an in vitro(25 μM MPTP, perfusion for 15 min) PD model in hippocampal slices of ***

关键词： Parkinson's disease cognitive impairments cordycepin Nano-cordycepin-biotin synaptic functions

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Plasticity of parylene memristors: Compact phenomenological model and synaptic properties

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CHAOS SOLITONS & FRACTALS 2025年 190卷

作者： Yuklyaevskikh, Georgii A. Shvetsov, Boris S. V. Emelyanov, Andrey Kulagin, Vsevolod A. V. Rylkov, Vladimir Demin, Vyacheslav A. Natl Res Ctr Kurchatov Inst Moscow 123182 Russia Lomonosov Moscow State Univ Moscow 119991 Russia Natl Res Univ Moscow Inst Phys & Technol Moscow 141701 Russia

Memristive devices have proven themselves as synaptic elements with rich internal dynamics and stochasticity for bio-inspired neuromorphic computing systems. Memristors based on parylene are of special interest due to their promising memristive properties, biocompatibility and ease of production. However, their synaptic behavior has not yet been fully demonstrated. In addition, the previously proposed model of resistive switching (RS) of these memristors was of a qualitative character and therefore important switching nuances turned out to be hidden. In this paper, a phenomenological model of resistive switching in parylene memristors is developed, based on the electromigration of metal cations from the top electrode, taking into account the stochastic nature of the RS process and conductivity of the parylene gap between the filament and the electrode, which determines various resistive states (plasticity) of the structures. The model is confirmed by a good correspondence between the calculated and measured current-voltage characteristics of the memristors. We also demonstrate various forms of bio-inspired plasticity of the structures, such as paired pulse facilitation/depression, long-term potentiation/depression and spike timing/amplitude/width/rate dependent plasticity. In the case of rate-based plasticity it resembles the theoretically and experimentally thoroughly studied BCM plasticity rule. The results obtained show the possibility of using such structures in the development of next-generation neuromorphic computing systems with promising calculating and learning capabilities.

关键词： Memristor Resistive switching Parylene Compact model synaptic functions BCM plasticity rule

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Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications

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ACS APPLIED ELECTRONIC MATERIALS 2022年第7期4卷 3739-3748页

作者： Park, Young Ran Cho, Haein Wang, Gunuk Korea Univ KIST Grad Sch Converging Sci & Technol Seoul 02841 South Korea Korea Univ Dept Integrat Energy Engn Seoul 02841 South Korea Korea Inst Sci & Technol Ctr Neuromorph Engn Seoul 02792 South Korea

ABSTRACT: Multiple building components with a variety of switching capabilities are required to implement memory-driven parallel computing architecture and multifunctional device applications. In this regard, there is a high demand for implementing multiple switching modes based on only one active material in a simple device form. In this study, we demonstrated the ability of a solution-processable two-terminal Ag (or Al)/NiOx/ ITO memristor that exhibits triple-switching characteristics depending on the different voltage regimes. Notably, the device exhibits an analog bipolar switching behavior under a low programming voltage (<= 1.0 V), enabling essential synaptic functions, as well as a high recognition accuracy of 87.42% in a single-layer neural network. After the electroforming process to form the oxygen vacancy-based conductive filament in the NiOx layer, the device concurrently exhibited digital bipolar switching and unipolar threshold switching behaviors at different voltage regimes without compliance current. These three switching characteristics are related to the transition of dominant switching mechanisms depending on the operating scheme, which is investigated using various material and chemical characterization techniques during switching, including cross-sectional scanning transmission electron microscopy, atomic force microscopy, ultraviolet photoelectron spectroscopy, and X-ray photoelectron spectroscopy.

关键词： NiO x memristor analog bipolar switching digital bipolar switching unipolar threshold switching synaptic functions

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CsPbBr3 QDs Employed as Gate to Fabricate an Artificial Photosynapse

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ACS APPLIED ELECTRONIC MATERIALS 2023年第9期5卷 4996-5004页

作者： Peng, Yubo Jin, Xudong Zeng, Pingjun Zhao, Min Gao, Zhipeng Ji, Jian-long Li, Xiaona Chen, Weiyi Taiyuan Univ Technol Coll Biomed Engn Taiyuan 030024 Peoples R China Taiyuan Univ Technol Key Lab Interface Sci Engn Adv Mat Minist Educ Taiyuan 030024 Peoples R China Taiyuan Univ Technol Coll Elect Informat & Opt Engn Taiyuan 030024 Peoples R China

Recently, artificial photosynapses have attracted much attention from researchers because they have the ability to perceive, process, and remember information about the external environment, which can greatly improve the efficiency of visual information processing. This work prepared the artificial optical synaptic transistors based on organic electrochemical transistors (OECTs) and CsPbBr3 quantum dots (QDs) synthesized at room temperature. The fabricated device here could successfully imitate the visual functions by mimicking the important synaptic features such as excitatory postsynaptic currents, paired-pulse facilitation, spiking-rate-dependent plasticity, spiking-number-dependent plasticity, and short-term memory to long-term memory transition. Employing the device, we also simulated the capabilities of the human visual system of light adaptation, image recognition, and preprocessing. The investigations in this work indicated that CsPbBr3 QDs have a high potential application in fabricating artificial photosynapses of the type of OECTs to imitate human vision due to the simpler fabrication process.

关键词： imitating vision learning and forgetting synaptic functions perovskite nanocrystals PEDOT:PSS

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Organic Single-Crystal Transistor with Unique Photo Responses and Its Application as Light-Stimulated synaptic Devices

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ACS APPLIED MATERIALS & INTERFACES 2020年第27期12卷 30627-30634页

作者： Wu, Xiaosong Dai, Donghuan Ling, Yao Chen, Shuo Huang, Chongyu Feng, Shiyu Huang, Weiguo Chinese Acad Sci State Key Lab Struct Chem Fujian Inst Res Struct Matter Fuzhou 350002 Fujian Peoples R China Univ Chinese Acad Sci Beijing 100049 Peoples R China Fujian Normal Univ Coll Chem & Mat Sci Fuzhou 350002 Fujian Peoples R China

Tremendous progress has been achieved on organic transistor-based photodetectors;however, because of the nonpositive correlation relationship between the photo/dark current ratio (P) and the gate voltage, the claimed best P, R (photoresponsivity), and D* (detectivity) can hardly be obtained simultaneously at a given gate voltage, which severely compromises the device performance. Here, a light and voltage dually gated transistor based on an organic semiconducting single crystal of 2,6-dithienylanthracene (DTAnt) is developed. Attributing to its very low on/off ratio in the dark and the remarkable increment of mobilities under illumination, this phototransistor shows good performance with a P of 3.83 X 10(3), R of 1.32 A W-1, and D* of 1.94 X 10(12) Jones achieved simultaneously at V-g = -100 V. Besides, the good reversibility and repeatability of its light-responsive behavior allows for the construction of an artificial photonic neuromorphic device with demonstrated synaptic functions, including excitatory postsynaptic current, short/long-term memory and pair-pulse facilitation/depression.

关键词： non-positive correlation relationship single-crystal phototransistor light-responsive behavior synaptic functions

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ASYNCHRONOUS ARITHMETIC FOR VLSI NEURAL SYSTEMS

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ELECTRONICS LETTERS 1987年第12期23卷 642-643页

作者： MURRAY, AF SMITH, AVW Department of Electrical Engineering University of Edinburgh Edinburgh UK

A computational style is described that mimics that of a biological neural network. Circuit forms of neural and synaptic functions are presented, and results of simulation and fabrication are reported.

关键词： neural nets asynchronous arithmetic Logic circuits Systems theory applications in biology and medicine VLSI logic design neural functions digital arithmetic computational style Digital arithmetic methods biological neural network Logic design methods results of simulation Switching theory VLSI neural systems synaptic functions fabrication neural system simulation

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A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 2021年第11期42卷 1599-1602页

作者： Lv, Jiaxin Wang, Saisai Li, Fanfan Liang, Qi Yang, Mei Ma, Xiaohua Wang, Hong Hao, Yue Xidian Univ Sch Adv Mat & Nanotechnol Key Lab Wide Band Gap Semicond Technol Xian 710071 Peoples R China Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Peoples R China

A physical transient memristor synapse with self-rectifying and analogue switching behaviors based on Mo/MgO/AZO (Al2O3 2 wt %, ZnO 98 wt %)/W is presented. By modulating thickness of MgO layer, the device with 5 nm MgO insulator layer shows stable resistive switching memory with a rectification ratio up to 10(2), and precise tuning synaptic functions. Meanwhile, the formation of Schottky barrier and oxygen vacancy conductive filament is proposed to further explain self-rectifying and analogue switching behaviors. Additionally, the electrical characteristics of the Mo/MgO/AZO/W devices degraded after being immersed in deionized water (DI) for 3 min, which demonstrated the physically transient features successfully. The physical transient self-rectifying memristors have great potential for applications in secure neuromorphic computing systems, and bio-integrated electronics.

关键词： Physically transient self-rectifying analogue switching synaptic functions

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Physically Transient W/ZnO/MgO/W Schottky Diode for Rectifying and Artificial Synapse

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 2020年第6期41卷 844-847页

作者： Wang, Saisai Dang, Bingjie Sun, Jing Zhao, Momo Yang, Mei Ma, Xiaohua Wang, Hong Hao, Yue Xidian Univ Key Lab Wide Band Gap Semicond Technol Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Technol Xian 710071 Peoples R China

Herein, physically transient Schottky diode with a structure of W/ZnO/MgO/W was proposed. By insert of 5 nm MgO layer between ZnO and W, Schottky barrier diode with rectification ratio of 7.8 x 10(3) at +/- 1.5 V and a current density of 1780 mA/cm(2) is obtained. In addition, the AC rectification frequency exceeds 1 MHz is observed. Meanwhile, stable resistive switching (RS) memory with remarkable performance and typical synapse functions have also been observed by applying a larger forming voltage. Additionally, the dissolution tests of ZnO, MgO and W films in deionized water (DI) demonstrate physically transient nature of the devices. The proposed transient W/ZnO/MgO/W Schottky diode provides the feasibility to control the functional for target use which have great potential for security computing systems, environmental friendly electronics, and biological integrated interfaces application.

关键词： Physically transient rectifying resistance switching synaptic functions

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Low-voltage protonic/photonic synergic coupled oxide phototransistor

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ORGANIC ELECTRONICS 2019年 71卷 31-35页

作者： Guo, Yan Bo Zhu, Li Qiang Gao, Wan Tian Ren, Zheng Yu Xiao, Hui Ge, Zi Yi Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China Chinese Acad Sci Ningbo Inst Mat Technol & Engn Key Lab Graphene Technol & Applicat Zhejiang Prov Ningbo 315201 Zhejiang Peoples R China Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China

Conventionally, oxide phototransistors operate at high voltage due to the limited electrostatic modulation behaviors of traditional gate dielectrics. In the present work, we report low-voltage driven chitosan-gated indium tin oxide ( ITO) phototransistors with protonic/photonic synergic coupling effects. Due to strong proton gating effects of chitosan, the phototransistor can operate at low voltage of below 1.5 V. Under illumination with light wavelength of 400 nm, the phototransistor exhibits high photoresponsivity up to similar to 300 A/W and optical gain up to similar to 5000 at low gate bias of - 0.45 V. The photoresponses are related to activation of trapped electrons at the interface, which negatively drifts the threshold voltage. Due to the inherent protonic/photonic synergic coupling effects, the phototransistors also demonstrate synaptic functions, including excitatory postsynaptic current and paired- pulse facilitation. Protonic/photonic synergic coupled oxide phototransistors may have potential applications in portable electronics and visual neuromorphic platforms.

关键词： Electrical double layer Protonic/photonic synergic coupling Phototransistor synaptic functions

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