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A true random number generator based on autonomous Boolean network with imbalanced node oscillation rings

MICROELECTRONICS JOURNAL 2025年 160卷

作者： Yi, Maoxiang Liu, Zhengwen Miao, Zihao Lu, Yingchun Liang, Huaguo Ma, Lixiang Anhui Inst Informat Technol Sch Elect & Elect Engn Wuhu 241199 Peoples R China Hefei Univ Technol Sch Microelect Hefei 230601 Peoples R China

true random number generators have broad application prospects in the fields of hardware and information security. In order to improve the throughput of true random number generator with lower hardware overhead, an autonomous Boolean network with coupled basic logic units and imbalanced node oscillating rings is constructed as the entropy source. A first-order high-frequency oscillation loop is used to enhance the network refresh frequency, and a high entropy chaotic signal is generated through multi-level nonlinear coupling and amplification of the node output signals. Each output signal of the entropy circuit is sampled with D Flip-Flop and the result is sent to a post-processing circuit composed of XOR network, where the true random number is obtained. The proposed TRNG is implemented on Xilinx A7 FPGA development board. The sampled output data is grabbed and extracted in real time using the ChipScope IP module, and then transferred to computer for experimental testing. NIST SP800-22 and SP800-90B randomness tests are performed on the generated data, and some other important performances such as deviation, autocorrelation, and maximum Lyapunov exponent are also evaluated. The results show that at a throughput of 750Mbps, the proposed TRNG can generate true random numbers with entropy values of 0.996323bps, low deviation and low autocorrelation, being also of low hardware overhead.

关键词： true random number generator Entropy source Autonomous Boolean network Throughput Imbalanced node

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SQTRNG: Spintronic Quaternary true random number generator

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SPIN 2025年第1期15卷

作者： Amirany, Abdolah Mohebbi, Ladan George Washington Univ Dept Elect & Comp Engn Washington DC 20052 USA Shahid Beheshti Univ Fac Elect Engn Tehran Iran

In this paper, a quaternary true random number generator (QTRNG) is designed and simulated. The proposed QTRNG capitalizes on the stochastic behavior of the magnetic tunnel junction (MTJ) device at currents below the critical current, alongside the adjustable threshold voltage of the carbon nanotube field-effect transistor (CNTFET). To maintain uniformity in the ratio of numbers generated by the QTRNG and mitigate the impact of fabrication process variations, a mid-level processing block has been incorporated. Simulation results show that the proposed QTRNG occupies at least 7% less area and can produce 36% more digits per second compared to existing binary and ternary true random number generators.

关键词： Spin electronics magnetic tunnel junction gate-all-around carbon nanotube field effect transistor true random number generator quaternary ternary logic

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A high bit rate and self-stable probability true random number generator based on magnetic tunnel junction for IoT security applications

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IEICE ELECTRONICS EXPRESS 2025年第9期22卷

作者： Zou, Sinan Zhao, Xing Xue, Yuan Gao, Jianfeng Li, Yilu Cui, Yan Luo, Jun Chinese Acad Sci Inst Microelect State Key Lab Fabricat Technol Integrated Circuits Beijing 100029 Peoples R China Chinese Acad Sci IMECAS Inst Microelect Beijing 100029 Peoples R China Univ Chinese Acad Sci UCAS Beijing 100049 Peoples R China

true random number generator (TRNG) is an essential part of cryptographic systems. In this paper, a high bit rate and self-stable probability TRNG based on spin-orbit torque magnetic tunnel junction (SOT-MTJ) is proposed. The TRNG reaches 16.7 Mb/s bit rate and 93.62 pJ/bit energy consumption for a single cell. In addition, the TRNG achieves a stable probability of random numbers regardless of the voltage and device to device variation. The random bits have passed the National Institute of Standards and Technology statistical test suite. Our results provide a candidate of high bit rate TRNG for IoT security applications.

关键词： IoT true random number generator magnetic tunnel junction spin-orbit torque

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true random number generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

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IEEE TRANSACTIONS ON NANOTECHNOLOGY 2020年 19卷 214-222页

作者： Aziza, Hassen Postel-Pellerin, Jeremy Bazzi, Hussein Canet, Pierre Moreau, Mathieu Della Marca, Vincenzo Harb, Adnan Aix Marseille Univ Univ Toulon CNRS IM2NP F-13007 Marseille France Lebanese Int Univ Dept Elect & Elect Engn Beirut 146404 Lebanon Int Univ Beirut Dept Elect & Elect Engn Beirut 146404 Lebanon

A novel true random number generator circuit fabricated in a 130 nm HfO2-based resistive RAM process is presented. The generation of the random bit stream is based on a specific programming sequence applied to a dedicated memory array. In the proposed programming scheme, all the cells of the memory array are addressed at the same time while the current provided to the circuit is limited to program only a subset of the memory array, resulting in a stochastic distribution of cell resistance values. Some cells are switched in a low resistive state, other cells are slightly programmed to reach an intermediate resistance state, while the remaining cells maintain their initial high resistance state. Resistance values are next converted into a bit stream and confronted to National Institute of Standards and Technology (NIST) test benchmarks. The generated random bit stream has successfully passed twelve NIST tests out of fifteen. Compared to state-of-the-art resistive RAM-based true random number generators, our proposed methodology is the first one to leverage on programming current limitation at a memory array level.

关键词： Resistance Switches generators Transistors random access memory Programming NIST true random number generator TRNG stochastic switching memristor OxRAM RRAM

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true random number generator Using Memcapacitor With Charge Trapping Layer

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 2024年第8期45卷 1464-1467页

作者： Hwang, Hwiho Song, Min Suk Youn, Sangwook Kim, Hyungjin Hanyang Univ Div Mat Sci & Engn Seoul 04763 South Korea Hanyang Univ Dept Semicond Engn Seoul 04763 South Korea

In this study, we experimentally validate a true random number generator (TRNG) utilizing a memcapacitor with TiN/Al2O3/HfO2/SiO2/Si (TAHOS) flash stack. The memcapacitor, incorporating a charge trapping layer, generates a displacement current via charge-discharge operations, and the current can be adjusted depending on the device state. Leveraging the randomness inherent in each switching cycle, this device can serve as an entropy source for the TRNG circuit. The generated bitstream has achieved a 95% confidence level in autocorrelation tests and has successfully passed 15 statistical tests from the National Institute of Standards and Technology (NIST), confirming its randomness and independence. This demonstrates the potential for stable and reliable hardware-based information security and encryption technology.

关键词： Capacitance-voltage characteristics Entropy Current measurement Voltage measurement Switching circuits NIST Voltage true random number generator memcapacitor charge trap flash switching variation

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true random number generator Based on Chaotic Oscillation of a Tunable Double-Well MEMS Resonator

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SMALL 2024年第48期20卷 e2403755页

作者： Wu, Junhui Sun, Haoyang Zhou, Guangya Natl Univ Singapore Dept Mech Engn 9 Engn Dr 1 Singapore 117575 Singapore

Chaotic systems have aroused interest across various scientific disciplines such as physics, biology, chemistry, and meteorology. The deterministic but unpredictable nature of a chaotic system is an ideal feature for random number generation. Microelectromechanical systems (MEMS) are a promising technology that effectively harnesses chaos, offering advantages such as a compact footprint, scalability, and low power consumption. This paper presents a true random number generator (TRNG) based on a double-well MEMS resonator integrated with an actuator and position sensor. The potential energy landscape of the proposed MEMS resonator is actively tunable with a direct current voltage. Experimental demonstrations of tunable bistability and chaotic resonance are reported in this paper. A chaotic time sequence is generated through piezoresistive sensing of the position of the MEMS resonator once it is driven into the chaotic regime. Subsequently, the randomness of the bit sequence, achieved by applying the exclusive or function to a digital chaotic sequence and its delayed differential is confirmed to meet the National Institute of Standards and Technology specifications. Moreover, the throughput and energy efficiency of the proposed MEMS-based TRNG can be adjusted from 50 kb s-1 and 0.44 pJ per bit at a low energy barrier to 167 kb s-1 and 6.74 pJ per bit at a high energy barrier by changing the MEMS device's potential well. The tunability of the proposed double-well MEMS resonator not only offers continuous adjustments in the energy efficiency of TNRG but also unveils vast and diverse research opportunities in analog computing, encryption, and secure communications. The paper introduces a true random number generator (TRNG) utilizing a 1D double-well microelectromechanical system (MEMS) resonator. This TRNG generates random sequences by inducing chaotic oscillations within the resonator. This MEMS device integrates the actuator and sensor, requiring only standard electron

关键词： chaos double-well oscillator nonlinear MEMS true random number generator

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true random number generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs 19

True Random Number Generator Implemented in ReRAM Crossbar B...

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Asia Pacific Conference on Circuits and Systems (APCCAS)

作者： Patni, Tanay Pethe, Abhijit BITS Pilani KK Birla Goa Campus Dept Elect & Elect Engn Sancoale Goa India

ISBN: (纸本)9798350381191

true random number generators (TRNG) find applications in various fields, especially hardware security. We suggest a TRNG that exploits the intrinsic static stochasticity of Resistive Switching random Access Memory (ReRAMs) to generate random bits. Other suggested designs use stochasticity in the switching mechanism, which requires high precision over input voltage and time. In the proposed design, the random bits are produced by comparing the resistance of two ReRAMs in their high resistance states. ReRAM crossbar architectures are being highly researched, and our design is completely compatible with a ReRAM crossbar. The design was verified by simulations and testing the output stream using the NIST randomness test suite.

关键词： true random number generator TRNG Static stochasticity Memristors ReRAM Crossbar

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LETRNG—A Lightweight and Efficient true random number generator for GNU/Linux Systems

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Tsinghua Science and Technology 2023年第2期28卷 370-385页

作者： Yucong Chen Fangfang Zhu Yanshan Tian Shuaixin Xu Lihong Han Qingguo Zhou Nam Ling School of Information Science and Engineering Lanzhou UniversityLanzhou 730000China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Department of Computer Science and Engineering Santa Clara UniversitySanta ClaraCA 95053 USA

Unpredictable and irreproducible digital keys are required to modulate security-related information in secure communication *** random number generators(TRNGs)rather than pseudorandom number generators(PRNGs)are required for the highest level of *** is a significant component in the digital security realm for extracting unpredictable binary ***,most TRNGs extract high-quality“noise”from unpredictable physical random ***,these applications must be equipped with external hardware for collecting entropy and converting them into a random digital *** study introduces a lightweight and efficient true random number generator(LETRNG)that uses the inherent randomness of a central processing unit(CPU)and an operating system(OS)as the source of *** then utilize a lightweight post-processing method based on XOR and fair coin operation to generate an unbiased random binary *** based on two famous test suites(NIST and ENT)show that LETRNG is perfectly capable of generating high-quality random numbers suitable for various GNU/Linux systems.

关键词： GNU/Linux system true random number generator complex system inherent randomness nondeterminism

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A fully CMOS true random number generator based on hidden attractor hyperchaotic system

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NONLINEAR DYNAMICS 2020年第4期102卷 2887-2904页

作者： Nguyen, Ngoc Kaddoum, Georges Pareschi, Fabio Rovatti, Riccardo Setti, Gianluca Univ Quebec Ecole Technol Super ETS Dept Elect Engn Montreal PQ Canada Politecn Torino Dept Elect & Telecommun I-10129 Turin Italy Univ Bologna Adv Res Ctr Elect Syst ARCES I-40125 Bologna Italy Univ Bologna Dept Elect Elect & Informat Engn I-40136 Bologna Italy

Low-power devices used in Internet-ofthings networks have been short of security due to the high power consumption of random number generators. This paper presents a low-power hyperchaosbased true random number generator, which is highly recommended for secure communications. The proposed system, which is based on a four-dimensional chaotic system with hidden attractors and oscillators, exhibits rich dynamics. Numerical analysis is provided to verify the dynamic characteristics of the proposed system. A fully customized circuit is deployed using 130nm CMOS technology to enable integration into low-power devices. Four output signals are used to seed a SHIFT-XOR-based chaotic data post-processing to generate random bit output. The chip prototype was simulated and tested at 100MHz sampling frequency. The hyperchaotic circuit consumes amaximum of 980 mu W in generating chaotic signals while dissipates a static current of 623 mu A. Moreover, the proposed system provides ready-to-use binary random bit sequences which have passed the well-known statistical randomness test suite NIST SP800-22. The proposed novel system design and its circuit implementation provide a best energy efficiency of 4.37 pJ/b at a maximum sampling frequency of 100MHz.

关键词： true random number generator Chaos Hyper-chaos CMOS Security

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Design of true random number generator Based on Multi-Ring Convergence Oscillator Using Short Pulse Enhanced randomness

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2023年第12期70卷 5074-5085页

作者： Ni, Tianming Peng, Qingsong Bian, Jingchang Yao, Liang Huang, Zhengfeng Yan, Aibin Wang, Senling Wen, Xiaoqing Anhui Polytech Univ Sch Integrated Circuits Wuhu 241000 Peoples R China Hefei Univ Technol Sch Microelect Hefei 230601 Peoples R China Ehime Univ Matsuyama Ehime 7908577 Japan Kyushu Inst Technol Grad Sch Comp Sci & Syst Engn Dept Creat Informat Fukuoka 8208502 Japan

The entropy source structure with embedded XOR gates in a ring oscillator (RO) as a true random number generator (TRNG) can improve the speed of accumulating jitter in the oscillator. However, the XOR gate has a certain response time to the input change, and when the input changes too fast, the XOR gate will output short pulses. In this paper, we propose a TRNG design based on a multi-ring convergence oscillator (MRCO) making use of the characteristics of short pulses. We study the output of the XOR gate when facing different inputs. By modeling the time of a fibonacci ring oscillator (FIRO) as an example, we find that the loss of short pulses in an inverter chain is the reason for making the FIRO enter into periodic oscillation. This phenomenon suppresses the accumulation of jitter and occurs periodically in existing structures. Our proposed structure uses independent sub-rings to accumulate jitter, allowing the main-ring to quickly generate short pulses to provide analog randomness. The proposed TRNG design is implemented in Xilinx Virtex-6 FPGA. The experimental results show that it has the highest ratio of throughput rate to hardware resources. The generated random sequence pass both NIST SP800-22 test and NIST SP800-90B test.

关键词： true random number generator XORs FIRO short pulse multi-ring convergence oscillator

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