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Electrical Design of Advanced Packaging and Systems Symposium, EDAPS

作者： Hai Au Huynh Yongbong Han Hoang Van Nguyen SoYoung Kim Department of Electronic Electrical and Computer Engineering Sungkyunkwan University Suwon Gyeonggi-do Republic of Korea

ISBN: (纸本)9781538665930;9781538665923

This paper proposes a via array structure that is applicable to package in reducing radio frequency interference (RFI). The via array structure is applied to the redistribution layer (RDL) of the package for shielding purposes. To further validate the effect, the test structure is designed and fabricated using Yagi-Uda antenna and microstrip mitred bend (MMB) transmission line. The coupling between the transmission line and embedded antenna is investigated to determine the strongest noise coupling point, and via array structures are placed at those points. By applying the proposed via array structure, the measured coupling noise between the transmission line and the receiver antenna is reduced up to 12 dB.

关键词： electromagnetic shielding microstrip lines radiofrequency interference receiving antennas Yagi antenna arrays Radiofrequency interference Receiving antennas Electromagnetic shielding Microstrip lines array structure Transmission Lines receiver antenna arrays shield construction packaging levels Yagi antenna test structure encapsulating

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Compact C-Band slotted waveguide array antenna using multi-mode metamaterial array and multi-mode extractor-converter structure

Compact C-Band slotted waveguide array antenna using multi-m...

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IEEE International Symposium on Antennas and Propagation

作者： Y. M. Madany A. F. Miligy Comm. and Electro. Depart. Alexandria University Communications and Electronics Depart. Alexandria University

ISBN: (纸本)9781467353168

The radiation property of the slotted waveguide antenna as a class of antenna commonly used in microwave radar applications, does not depend on the cross section of the waveguide, but on the inclusion. The primary goal of this paper was to miniaturize a C-Band slotted waveguide antenna using metamaterial array structure rather than classical dielectric inclusion and achieve a cross section area reduction about 17.64×10.32 mm~2 and absolute bandwidth up to 550 MHz with enhancement TE_(10) transmission ratio up to 32 and higher modes depression through combined of circular spiral multi-mode metamaterial array structure and cone extractor-converter structure compared to the conventional guided waves. The proposed structures have been introduced and analyzed using the finite element method.

关键词： WAVEGUIDE ANTENNAS Cross section array structure SLOT left-handed materials proposed structure transmission ratio Finite element method Waveguide Device Component slotted-waveguide antenna

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All-diamond microelectrode array device

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ANALYTICAL CHEMISTRY 2005年第11期77卷 3705-3708页

作者： Pagels, M Hall, CE Lawrence, NS Meredith, A Jones, TGJ Godfried, HP Pickles, CSJ Wilman, J Banks, CE Compton, RG Jiang, L Schlumberger Cambridge Res Ltd Cambridge CB3 0EL England Element Six BV NL-5431 SH Cuijk Netherlands Element Six Ltd Ascot SL5 8BP Berks England Univ Oxford Phys & Theoret Chem Lab Oxford OX1 3QZ England

We report the development of all-diamond microelectrochemical devices, namely, a microelectrode array (MEA), in which a periodic array structure with well-defined diameters, distance, and hexagonal unit cell pattern is micromachined using a combination of state-of-the-art microwave-induced plasma growth and laser ablation shaping techniques to prepare and coat a patterned boron-doped diamond (BDD) substrate with an intrinsic diamond insulating layer. The active BDD element can be tuned to between 10 and 50 mu m in diameter with a 10 times diameter center-to-center distance between two adjacent conducting elements, which are exactly coplanar to the dielectric surroundings. This type of device should enable applications in harsh conditions such as high temperature, high pressure, and resistive media under dynamic flow regimes.

关键词： ELECTRODES MEMS FABRICATION Laser Ablation center to center Microelectromechanical systems Electrodes fabrication Hexagonal Unit Cell Diameter array structure

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A SYSTOLIC array ARCHITECTURE FOR THE APPLEBAUM-HOWELLS array

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IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 1990年第8期38卷 1310-1313页

作者： UENO, M KAWABATA, K MOROOKA, T Toshiba Research and Development Center Kawasaki Japan

A systolic array architecture for the Applebaum-Howells array is derived. The problem to be solved is the elimination of the global signal feedback loop in the conventional Applebaum-Howells array processor. The procedure involved in deriving the architecture consists of two steps: orthogonalization of the input element signals and elimination of the feedback loop. In the first step, the input element signals are orthogonalized with regard to each other by using the Gram-Schmidt processor, placed ahead of the Applebaum-Howells processor. It is shown in the second step that the orthogonality in the Gram-Schmidt processor output signals can remove the global signal feedback loop and that the Applebaum-Howells array can be implemented effectively by using a systolic array with regular structure and local communication. Simulation results also show that the proposed processor features desirable characteristics for the radiation pattern with low sidelobe level common to the Applebaum-Howells array.

关键词： ARCHITECTURE Systolic algorithms Feedback loop PROCESSOR Building construction Radiation patterns orthogonality signals array structure

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PERFORMANCE OF THE 3-D PENCIL FLASH EPROM CELL AND MEMORY array

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1995年第11期42卷 1982-1991页

作者： PEIN, H PLUMMER, JD STANFORD UNIV CTR INTEGRATED SYSTSTANFORDCA 94305

A promising new 3-D Programmable erasable nonvolatile cylindrical (PENCIL) flash EPROM cell that offers significant area and performance advantages over conventional planar approaches has been implemented in a novel memory array, The 3-D PENCIL cell is a vertical de,ice formed on the sidewalls of an etched silicon pillar, The cell is a single transistor stacked gate structure with the floating gate and control gate completely surrounding the pillar, Current hows vertically from the bit Line contact at the top of the pillar to the source lying at the bottom of the pillar, When implemented in a novel self-aligned array, the cell size approaches the square of the minimum pitch and has an area less than half that of the conventional NOR type structure, The cell and array architecture also promise to be highly scalable. Experimental data reveals that the cells have up to 3x larger read current than comparable planar cells, are suitable for 5 V only operation and have fast program and erase speeds at moderate voltage levels. Uniformity and endurance characteristics are also promising.

关键词： SIDEWALL single-transistor Cell Size Line contact floating gates pencil array structure cache store

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A HIGH-DENSITY DUAL-PORT MEMORY CELL OPERATION AND array ARCHITECTURE FOR ULSI DRAMS

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IEEE JOURNAL OF SOLID-STATE CIRCUITS 1992年第4期27卷 610-617页

作者： HIDAKA, H ARIMOTO, K FUJISHIMA, K LSI Laboratory Mitsubishi Electric Corporation Limited Itami Hyogo Japan

A new high-density dual-port DRAM architecture is proposed, which realizes a two-transistor/one-capacitor (2Tr-1C) dual-port memory cell array with immunity against the array noise caused by the dual-port operation. This architecture, called a truly dual-port (TDP) DRAM, adopts the previously proposed divided/shared bit-line (DSB) sensing scheme [3], [4] in a dual-port 2Tr-1C DRAM array. A 2Tr-1C dual-port memory cell array with the folded bit-line sensing operation, which does not increase the number of bit lines of the 1Tr-1C folded bit-line memory array, is realized, thus reducing the memory cell size. This new architecture offers a solution to the fundamental limitations in the 2Tr-1C dual-port memory cell, and it is easily applicable to dual-port memory cores in ASIC environments. An analysis on the memory array noise in various dual-port architectures shows a significant improvement with this architecture. Applications to a complete pipelining operation of DRAM array and a refresh-free DRAM core are also discussed.

关键词： DRAM1 gene bit line dual-port immunocytes array structure

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Anti-Corrosion Properties of array-structured Superhydrophobic Surfaces

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JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE 2024年第4期33卷 1786-1796页

作者： Qiu, Rongxian Li, Junwei Wang, Chengyang Xiao, Fujun Cao, Wei Wu, Zhilin Nanjing Univ Sci & Technol Sch Mech Engn Nanjing 210094 Peoples R China

Inspired by the array-structured superhydrophobic surface of natural lotus leaves, an array structure was successfully constructed on the surface of AZ31B magnesium (Mg) alloys by a simple, green, and efficient high-speed wire electrical discharge machining (HS-WEDM) technique. The contact angle of the prepared surface was as high as 157 degrees +/- 1 degrees, and its sliding angle was less than 5 degrees. Therefore, the prepared surface has excellent superhydrophobicity. The wettability and anti-corrosion properties of the superhydrophobic surface were investigated. The results show that the microarray microstructure affects the superhydrophobic surface. The order of the importance of the factors is protrusion height (H) > protrusion spacing (S) > protrusion side length (L);the corrosion inhibition efficiency of the superhydrophobic surface prepared under the optimum process parameters is more than 95%. Therefore, the superhydrophobicity of AZ31B magnesium alloy can effectively improve its corrosion resistance.

关键词： anti-corrosion array structure magnesium alloys superhydrophobic surface wettability

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Asymptotic analysis of an array of closely spaced absolutely conductive inclusions

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NETWORKS AND HETEROGENEOUS MEDIA 2006年第3期1卷 353-377页

作者： Berlyand, Leonid Cardone, Giuseppe Gorb, Yuliya Panasenko, Gregory Penn State Univ Dept Math University Pk PA 16802 USA Penn State Univ Mat Res Inst University Pk PA 16802 USA Univ Sannio Dept Engn Benevento Italy Univ St Etienne LaMUSE F-42023 St Etienne France

We consider the conductivity problem in an array structure with square closely spaced absolutely conductive inclusions of the high concentration, i.e. the concentration of inclusions is assumed to be close to 1. The problem depends on two small parameters: epsilon, the ratio of the period of the micro-structure to the characteristic macroscopic size, and delta, the ratio oft h e thickness of the strips of the array structure and the period of the microstructure. The complete asymptotic expansion of the solution to problem is constructed and justified as both epsilon and delta tend to zero. This asymptotic expansion is uniform with respect to epsilon and delta in the area {epsilon = O(delta(alpha)), delta = O(epsilon(beta))} for any positive alpha, beta.

关键词： homogenization array structure asymptotic expansion two small parameters boundary layer

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array Operation Mode Characterization of Select Gate Lateral Coupling Single-Poly Embedded Nonvolatile Memory

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IEEE TRANSACTIONS ON ELECTRON DEVICES 2016年第4期63卷 1495-1501页

作者： Park, Sung-Kun Kim, Nam-Yoon Choi, Kwang-Il SK Hynix Inc Syst IC Div Platform Technol Dev Team Cheongju 28429 South Korea

This paper clarifies the reason for the specific array structure and operation methods of a select gate lateral coupling (SGLC) cell array as well as its disturbance immunity. An SGLC cell is a type of single-poly embedded nonvolatile memory that does not require any additional masks and process steps for fabrication. It shows excellent features, such as high programming speed, small cell size comparable to that of SRAM, multitime programmable, and over-erase free characteristic. However, the reasons of its operation methods and cycling limitation have not yet been clarified. We investigated the cycling effect of two types of array structures based on the unit-cell operation method. In particular, in the forward read mode, because of drain-induced barrier lowering (DIBL) that is enhanced by trapped holes at the liner nitride, V-T of a programmed cell significantly decreased with a relatively small number of program/erase (P/E) cycles, resulting in a narrower V-T window. By adopting the reverse read mode with source-side programming, DIBL enhancement was suppressed and a stable V-T window was maintained during P/E cycling. Furthermore, by measuring each disturb method that works with the SGLC cell array structure and the reverse read operation mode, we confirmed that an array size larger than 128-kB sectors is possible.

关键词： array structure disturbance embedded memory lateral coupling single-poly nonvolatile memory

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Application of plowing extrusion-cutting for manufacturing array structural fins

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JOURNAL OF MANUFACTURING PROCESSES 2022年 78卷 202-217页

作者： Zhang, Baoyu Shen, Pengyu Zhang, Jiayang Zeng, Yuning Pang, Xueqin Deng, Wenjun South China Univ Technol Sch Mech & Automot Engn 381 Wushan Rd Guangzhou 510641 Guangdong Peoples R China Shantou Univ Coll Engn 243 Daxue Rd Shantou 515063 Guangdong Peoples R China

Plowing extrusion-cutting (PE-C) is proposed as a new turning method for manufacturing functional structure strips with excellent forming performance, which can be applied as high-efficiency three-dimensional (3D) fins for cooling electronic devices. Experimental investigations were conducted to clarify the characteristic features, performance, and forming mechanism. During PE-C, a plowing tool was applied for shaping metal surfaces before the conventional cutting. Thus, two critical stages of plowing extrusion (PE) and cutting separation were sequentially involved. Results showed that three novel functional structures were obtained, i.e., grooved, dorsal fin-like, and bamboo shoot-like structures. A large feed f and cutting velocity Vc had a positive effect on forming the dorsal fin-like structure. The grooved structure was prone to forming with a small f and large tool rake angle gamma c, while the bamboo shoot-like structure tended to form at small Vc and gamma c. Intense tensile stress was generated by excessive metal accumulation during PE stage;once its value surpassed the break limit, the metal underwent ductile fracture and turned into a dorsal fin-like structure. While the bamboo shoot-like structure depended on ductile-to-brittle shear deformation during the cutting separation stage. The excellent forming performance was also reflected in their high fin height (> 3 mm), large aspect ratio (> 5), and low base thickness ratio (< 10%). These results illustrate that PE-C has excellent potential in manufacturing 3D array fins, which are suitable for heat transfer applications.

关键词： Plowing extrusion-cutting Fin Machining array structure Heat transfer

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