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18 篇 会议

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Analysis and modeling of the Long-Term Ageing Rate of SiGe HBTs under Mixed-Mode Stress

Analysis and Modeling of the Long-Term Ageing Rate of SiGe H...

引用

IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Fischer, G. G. IHP Technol Pk 25 Frankfurt Oder Germany

ISBN: (纸本)9781509004843

By means of long-term mixed-mode stress tests of high-speed SiGe HBTs an empirical ageing function for compact models was constructed. This ageing function models saturation of the aging rate as a function of stress time and stress current and is applicable for all relevant mixed-mode stress conditions of this HBT type. Additionally, 1000h stress tests on a high-voltage HBT revealed that not only saturation but even reversal of ageing rate is possible in the long run.

关键词： Heterojunction bipolar transistors HBT reliability bipolar modeling and simulation

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Investigation of Electronic Noise in THz SiGe HBTs by Microscopic simulation

Investigation of Electronic Noise in THz SiGe HBTs by Micros...

引用

IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Jungemann, Christoph Hong, Sung-Min Rhein Westfal TH Aachen Chair Electromagnet Theory D-52056 Aachen Germany Gwangju Inst Sci & Technol Sch Informat & Commun Gwangju 500712 South Korea

ISBN: (纸本)9781479901296

Noise in an ultimate SiGe HBT with peak cutoff and maximum oscillation frequencies above 1THz is investigated by a microscopic transport model based on the Boltzmann equation, which can handle the quasi-ballistic transport, high frequencies and the complicated band structure in such devices. The noise performance of the transistor is excellent due to the high intrinsic speed. For example, the minimum noise figure can be as low as 0.7dB at 100GHz for this intrinsic device. A drawback of this device is the low collector/emitter breakdown voltage and above this voltage impact ionization degrades the noise performance.

关键词： bipolar transistor bipolar modeling and simulation device physics electronic noise

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State-of-the-art and Future Perspectives in Calibration and De-Embedding Techniques for Characterization of Advanced SiGe HBTs featuring sub-THz f_T/f_MAX

State-of-the-art and Future Perspectives in Calibration and ...

引用

IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Derrier, N. Rumiantsev, A. Celi, D. STMicroelectronics 850 Rue Jean Monnet F-38926 Crolles France Cascade Microtech Inc Beaverton OR 97008 USA

ISBN: (纸本)9781467330213

This paper presents an overview of RF calibration and pad de-embedding techniques, discusses limitations and demonstrates methods for accuracy improvement applicable for the characterization of advanced BiCMOS HBTs. The impact of the reference plane location is discussed. Numerous experiments with different device geometries showed that the in-situ (on-wafer) calibration yields the most accurate results. For a probe-tip calibration, a multiple-dummy de-embedding is crucial to improve measurement accuracy. A comparison with the compact model (HICUM V2.30) confirmed the findings.

关键词： SiGe HBT bipolar modeling and simulation de-embedding HF measurements calibration S-parameters

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Extraction of the emitter related space charge weighting factor parameters of HICUM L2.30 using the Lambert W function

Extraction of the emitter related space charge weighting fac...

引用

IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Stein, F. Huszka, Z. Derrier, N. Maneux, C. Celi, D. STMicroelectronics 850 Rue Jean Monnet F-38926 Crolles France Univ Bordeaux 1 IMS F-33405 Talence France Austriamicrosystems AG Unterpremstatten Austria

ISBN: (纸本)9781467330213

The base-emitter (BE) depleting charge weighting factor h(jei) accounts for the variation of the BE space charge region (SCR) with bias. In former HICUM model releases this weighting factor was a fixed model parameter value independent of device bias or temperature. With recent technology advancements and aggressively scaled vertical profiles incorporating significant germanium fractions a new model formulation was introduced. However the increased model complexity calls for a more sophisticated parameter extraction strategy. A novel extraction method is presented that is based on the solution of the new HICUM L2.30 formulation with the help of the Lamber W function. The extraction flow is presented and validated using a mature BiCMOS process technology available for mass-production.

关键词： Silicon bipolar/BiCMOS process technology bipolar modeling and simulation RF circuits analog circuits device physics

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Fast noise prediction for process optimization using only standard DC and S-parameter measurements

Fast noise prediction for process optimization using only st...

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IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Gridelet, E. Scholten, A. J. Klaassen, D. B. M. van Dalen, R. Pijper, R. Magnee, P. H. C. Tiemeijer, L. F. Dinh, V. T. Vanhoucke, T. NXP Semicond Res Kapeldreef 75 B-3001 Louvain Belgium NXP Semiconductors Res NL-5656 Eindhoven Netherlands NXP Semiconductors Nijmegen NL-6534 Nijmegen Netherlands

ISBN: (纸本)9781467330213

This paper presents a method to select, amongst a series of devices differing on their process, the best device in terms of high-frequency noise characteristics, only from standard DC and S-parameter measurements and without the need of noise measurements. The method is developed and tested using synthetic input data and noise data generated with the MEXTRAM compact model and validated against on-wafer noise measurements on a series of devices with different process variations. A very simple equivalent circuit, with base, emitter and collector resistances as the only external components, is shown to be sufficient to rightfully sort devices in terms of their high-frequency noise performance. This allows to fully automate noise prediction procedure based on standard DC and S-parameter measurements without the need of manual data manipulation.

关键词： Silicon bipolar/BiCMOS process technology bipolar modeling and simulation RF circuits noise

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Long-Term Reliability of High-Performance SiGe:C Heterojunction bipolar Transistors

Long-Term Reliability of High-Performance SiGe:C Heterojunct...

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IEEE bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

作者： Fischer, G. G. Micusik, D. Pocej, A. IHP D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781467330213

The reliability of high-performance SiGe:C HBTs was studied under mixed-mode stress conditions. We applied much longer stress-times than previous investigations and observed a not yet described saturation of the base current degradation with stress-time. This saturation behavior was integrated into an ageing function enabling improved prediction of HBT and RF circuit ageing during a 10 year life-time frame. Additionally, reverse stress tests confirmed also an increase of the base-emitter capacitance.

关键词： Heterojunction bipolar transistors bipolar modeling and simulation RF circuits HBT reliability

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Virtual Technology for RF Process and Device Development

Virtual Technology for RF Process and Device Development

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IEEE bipolar/BiCMOS Technology and Circuits Meeting (BCTM)

作者： Vanhoucke, T. Klaassen, D. B. M. Mertens, H. Donkers, J. J. T. M. Hurkx, G. A. M. Huizing, H. G. A. Magnee, P. H. C. Hijzen, E. A. van Dalen, R. Gridelet, E. Slotboom, J. W. NXP Semicond Res Kapeldreef 75 B-3001 Louvain Belgium NXP Semicond Res Eindhoven Netherlands NXP Semicond Nijmegen Nijmegen Netherlands

ISBN: (纸本)9781612841663

The increasing complexity of modern technologies has made semiconductor process and device development challenging. A reduction in the number of experimental tests and a detailed internal insight opens the way to a more optimized process in a shorter time at reduced costs and development time. This has largely increased the use of virtual technology platforms for technology development and circuit optimization in e. g. RF BiCMOS applications. The capability of accurate predictions and directly linking basic technology parameters to RF circuit performance makes virtual technology a very powerful tool during RF process and device development. Commercially available technology computer-aided design (TCAD) tools are generally used during device fabrication and characterization, process optimization, and circuit design. With three examples we illustrate the evolution of the virtual technology process used for RF BiCMOS development within NXP Semiconductors. In the first two examples, we illustrate device and process optimization while in the third example we describe a new way of combining device and process optimization with circuit simulations by means of a distributed equivalent circuit. It allows to take the interaction between the intrinsic device (i.e. device doping profile) and the parasitic environment (i.e. device architecture) efficiently into account for high-frequency applications and in particular for low-noise circuits.

关键词： Silicon bipolar/BiCMOS process technology Virtual technology TCAD bipolar modeling and simulation High-frequency noise Equivalent circuit

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Improved Lumped Charge Model for High Voltage Power Diode and Automated Extraction Procedure

Improved Lumped Charge Model for High Voltage Power Diode an...

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IEEE bipolar/BiCMOS Technology and Circuits Meeting (BCTM)

作者： Bellini, M. Stevanovic, I. Prada, D. ABB Switzerland Ltd Corp Res CH-5405 Dattwil Switzerland

ISBN: (纸本)9781612841663

The "lumped charge" power diode compact model [1] is extended including impact ionization while maintaining the low computational cost. The new model can better reproduce the shape of the current peak during reverse recovery, allowing for more predictive EMI/EMC simulations. The parameter extraction procedure is also improved and automated through multi-objective genetic algorithms, resulting in very good agreement between model and measurements. Finally, calibrated TCAD simulations are used to understand the limitations of the compact model.

关键词： power semiconductor device bipolar modeling and simulation semiconductor device modeling parameter extraction device physics

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Integration of Isolated RF-LDMOS Transistors in a 0.25 μm SiGe:C BICMOS Process

Integration of Isolated RF-LDMOS Transistors in a 0.25 μm S...

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IEEE bipolar/BiCMOS Technology and Circuits Meeting (BCTM)

作者： Sorge, R. Fischer, A. Schmidt, J. Wipf, C. Barth, R. Pliquett, R. IHP D-15236 Frankfurt Oder Germany

ISBN: (纸本)9781612841663

Isolated LDMOS transistors with thin gate oxides and good RF performance are key components in integrated RF circuits where large voltage shifts are required for the circuit functionality. We demonstrate the modular integration of isolated NLDMOS and PLDMOS focusing on maximal RF performance into an advanced industrial 0.25 mu m SiGe:C BICMOS process. A boundary condition for device construction was a limit for maximum deep n-well implantation energy of 750keV. The achieved values BVDSS/f(T)/f(MAX) of -21V/10GHz/35GHz for the PLDMOS and 16V/30GHz/53GHz for the isolated NLDMOS, respectively, reflect the excellent RF performance obtained.

关键词： Silicon bipolar/BiCMOS process technology bipolar modeling and simulation power devices analog or digital circuits RF circuits device physics

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modeling of SiGe spike mono emitter HBT with HICUM in static and dynamic operations

Modeling of SiGe spike mono emitter HBT with HICUM in static...

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IEEE bipolar/BiCMOS Technology and Circuits Meeting (BCTM)

作者： Bhattacharyya, A. Maneux, C. Fregonese, S. Zimmer, T. Univ Bordeaux Lab Integrat Mat Syst IMS F-33405 Talence France

ISBN: (纸本)9781612841663

In this paper, simulation and modeling results for a npn SiGe spike mono emitter transistor are presented covering both DC and frequency operations. First, the results obtained for a SiGe spike emitter are compared with the conventional HBT. Then model parameter extraction with the help of HICUM model is performed in the simulated data for the new device. The accurate compact modeling introduces a new recombination time constant parameter inside the existing HICUML2.24 model. modeling results with the extended model indicate a good agreement not only in DC characteristics but also in dynamic behavior.

关键词： bipolar modeling and simulation device physics

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