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EXPERIMENTAL RESULTS ON 3-PHASE POLYSILICON CCDS WITH A TCE-SIO2-SI3N4 GATE INSULATOR

IEEE JOURNAL OF SOLID-STATE CIRCUITS 1976年第1期11卷 229-231页

作者： DECLERCK, GJ DEMEYER, KM JANSSENS, EJ LAES, EE VANDERSPIEGEL, J KATHOLIEKE UNIV LEUVEN DEPT ELEKTROTECH LAB FYS & ELEKTR HALFGELEIDERS B-3030 HEVERLE BELGIUM

A three-phase charge-coupled device (CCD) technology with three levels of polysilicon and trichloroethylene (TCE) oxide-silicon nitride gate, having a good processing yield and taking full advantage of the self-aligning property of silicon gate transistors, is presented. The use of a TCE gate oxide results in a storage time between 3-4 min, measured on the CCD itself. The presence of the silicon nitride requires a suitable combination of low- and high-temperature anneals in order to decrease the density of fast surface states. A reliability problem observed at high clock voltages is attributed to trapping of injected hot carriers in the gate insulator.

关键词： Insulation Charge coupled devices Diodes Silicon on insulator technology Substrates Etching density estimation robust algorithm Time measurement Annealing Clocks

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WAVE REPRESENTATION OF AMPLIFIER NOISE

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IRE TRANSACTIONS ON CIRCUIT THEORY 1962年第1期CT 9卷 84-&页

作者： PENFIELD, P Dept. of Electrical Engineering Research Lab. of Electronics Mass. Inst. Tech. Cambridge. Mass. United States

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LATERAL COMPLEMENTARY TRANSISTOR STRUCTURE FOR SIMULTANEOUS FABRICATION OF FUNCTIONAL BLOCKS

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PROCEEDINGS OF THE IEEE 1964年第12期52卷 1491-+页

作者： LIN, HC FORMIGONI, N VANDERLEK, B TAN, TB CHANG, GY Westinghouse Molecular Electronics Division Elkridge MD USA

Heretofore, the schemes for fabricating a complementary transistor structure in a monolithic functional block entailed either some additional, difficult-to-control processing steps or a sacrifice in isolation of the collector regions of one type of transistor. This paper describes an isolated p-n-p transistor structure fabricated by the same technique used for the conventional all n-p-n transistor functional block without any additional processing steps. The basic p-n-p transistor has a lateral structure. During the p-type base diffusion of the n-p-n transistor, two concentric p-type regions at close distance are selectively diffused into an isolated n- type region such as that used for the collector of an n-p-n transistor. The center p-type diffused region forms the emitter and the outer ring forms the collector. The n-type spacing between these two regions serves as the base. The current gain of this transistor is not high, typically around unity. However, by amplifying the collector current of the p-n-p transistor with an n-p-n transistor, the composite transistor acts like a high gain p-n-p transistor and the composite current gain can be made comparable to that of the n-p-n transistor in the same functional block. The lateral complementary transistor has been used extensively and successfully for the fabrication of linear functional blocks such as those used in the Advanced Minuteman Program.

关键词： Fabrication Transistors Electric variables density estimation robust algorithm Substrates Molecular electronics Cutoff frequency Capacitance

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SPIN-ORBIT-SPLITTING IN THE GROUND X-(2)PI ELECTRONIC-STATE OF THE BAR VAN-DER-WAALS COMPLEX

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CHEMICAL PHYSICS LETTERS 1995年第4期233卷 483-488页

作者： HWANG, E DAGDIGIAN, PJ Department of Chemistry The Johns Hopkins University Baltimore MD 21218-2685 USA

The spin-orbit excited (2) Pi(3/2) manifold of (BAr)-B-11(X (2) Pi) was observed in a free jet supersonic expansion by laser fluorescence excitation in the B (2) Sigma(+)-X (2) Pi (7, 0) band. In previous work we observed transitions from the lower (2) Pi(1/2) manifold. The spin-orbit constant A was determined to equal 10.88 +/- 0.08(1 sigma) cm(-1), close to a simple estimate, 2/3 Delta E=10.17 cm(-1), where Delta E is the boron 2p P-2(3/2)-P-2(1/2) spin-orbit splitting. The near equality of experimental and theoretical values of A suggests that the boron 2p orbital is not strongly affected by the weak, nonbonding B-Ar interaction.

关键词： Interatomic potentials Laser spectroscopy Vanderwaals complexes Metal atoms Molecule Transitions Collisions Spectrum System Nane spin-orbit Collisions Spectra Van der Waals complexes LASER SPECTROSCOPY Electronics Spin Interatomic potential ground molecules density estimation robust algorithm

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CONTROLLED INVARIANCE FOR NON-LINEAR SYSTEMS

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IEEE TRANSACTIONS ON AUTOMATIC CONTROL 1982年第4期27卷 904-914页

作者： NIJMEIJER, H VANDERSCHAFT, A UNIV GRONINGEN INST MATH 9700 AV GRONINGEN NETHERLANDS

Necessary and sufficient conditions are derived for "( A, B )- invariance," called here controlled invariance, for nonlinear systems \dot{x} = f(x, u) . The obtained results generalize and elucidate already known results about systems \dot{x} = A(x) - \sum \min{i=1}\max{m} =u_{i}B_{i}(x) . A new and direct differential geometric interpretation of the concept of controlled invariance and the derived conditions is given.

关键词： Nonlinear control systems Control systems Nonlinear systems Feedback Linear systems density estimation robust algorithm Sufficient conditions Application specific integrated circuits Stability Mathematics

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CALCULATION OF THE RESISTANCE VALUE OF LASER-TRIMMABLE PLANAR RESISTORS IN AN INTERACTIVE MASK-LAYOUT DESIGN SYSTEM

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IEEE JOURNAL OF SOLID-STATE CIRCUITS 1984年第4期19卷 532-537页

作者： VANDERWOERD, AC VANLAMMEREN, JPM JANSE, RJH VANBEYNHEM, RH Research Laboratory Department of Electrical Engineering Delft University of Technnology Delft Netherlands

The calculation method is especially suited for diffused resistors in integration processes and metal-film resistors in thin-film processes which can be adjusted by laser trimming. The method is based on a special application of Green's boundary formula. By modeling the resistor in a special way, the potential problem is reduced to a single-boundary problem. As a consequence, the calculation time and the necessary computer memory are reduced while the accuracy reduction remains small in practical cases. Therefore, the calculation can be carried out on a small computer, making interactive computer design of laser-trimmable resistors on IC layouts more feasible and less expensive. The computing time typically amounts to a few seconds. The method is illustrated by practical examples.

关键词： Resistors Optical design Laser modes Immune system Laser beam cutting density estimation robust algorithm Contact resistance Surface resistance Shape Transistors

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NONEXISTENCE THEOREM EXCEPT THE OUT-OF-PHASE AND IN-PHASE SOLUTIONS IN THE COUPLED VAN DER POL EQUATION SYSTEM

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UKRAINIAN MATHEMATICAL JOURNAL 2009年第8期61卷 1311-1337页

作者： Nohara, B. T. Arimoto, A. Musashi Inst Technol Tokyo 158 Japan

We consider a coupled van der Pol equation system. Our coupled system consists of two van der Pol equations that are connected with each other by linear terms. We assume that two distinctive solutions (out-of-phase an... 详细信息

关键词： consider Polequations equations pol Genes coupled system density estimation robust algorithm DYNAMICAL SYSTEMS Equation coupled equation Phase

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Flexible expressed region analysis for RNA-seq with derfinder

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NUCLEIC ACIDS RESEARCH 2017年第2期45卷 e9-e9页

作者： Collado-Torres, Leonardo Nellore, Abhinav Frazee, Alyssa C. Wilks, Christopher Love, Michael I. Langmead, Ben Irizarry, Rafael A. Leek, Jeffrey T. Jaffe, Andrew E. Johns Hopkins Bloomberg Sch Publ Hlth Dept Biostat Baltimore MD 21205 USA Johns Hopkins Univ Ctr Computat Biol Baltimore MD 21205 USA Lieber Inst Brain Dev Johns Hopkins Med Campus Baltimore MD 21205 USA Johns Hopkins Univ Dept Comp Sci Baltimore MD 21218 USA Harvard TH Chan Sch Publ Hlth Dept Biostat Boston MA 02115 USA Harvard Univ Dana Farber Canc Inst Boston MA 02215 USA Johns Hopkins Univ Dept Mental Hlth Baltimore MD 21205 USA

Differential expression analysis of RNA sequencing (RNA-seq) data typically relies on reconstructing transcripts or counting reads that overlap known gene structures. We previously introduced an intermediate statistical approach called differentially expressed region (DER) finder that seeks to identify contiguous regions of the genome showing differential expression signal at single base resolution without relying on existing annotation or potentially inaccurate transcript assembly. We present the derfinder software that improves our annotation-agnostic approach to RNA-seq analysis by: (i) implementing a computationally efficient bump-hunting approach to identify DERs that permits genome-scale analyses in a large number of samples, (ii) introducing a flexible statistical modeling framework, including multi-group and timecourse analyses and (iii) introducing a new set of data visualizations for expressed region analysis. We apply this approach to public RNA-seq data from the Genotype-Tissue Expression (GTEx) project and BrainSpan project to show that derfinder permits the analysis of hundreds of samples at base resolution in R, identifies expression outside of known gene boundaries and can be used to visualize expressed regions at base-resolution. In simulations, our base resolution approaches enable discovery in the presence of incomplete annotation and is nearly as powerful as feature-level methods when the annotation is complete. derfinder analysis using expressed region-level and single base-level approaches provides a compromise between full transcript reconstruction and feature-level analysis.

关键词： Genome selectors transcript Inaccurate RNA Sequence Region density estimation robust algorithm FLEXIBLE ANNOTATIONS EXPRESSION ANALYSIS Analyses, Sequence

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TRENCH SIDEWALL IMPLANTATION WITH A PARALLEL SCANNED ION-BEAM

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1990年第4期37卷 1052-1056页

作者： KAKOSCHKE, R KAIM, RE VANDERMEULEN, PFHM WESTENDORP, JFM VARIAN EXTRION DIV BEVERLYMA 01915

The sidewalls of trenches on 100-mm wafers were doped by implantation with an implanter whose beam scan is accurately parallel over the whole wafer surface. The doping was characterized with a staining technique and transmission electron microscopy. All the trenches exhibited symmetrical doping, with the main differences between trenches from the center and edge of a wafer being due to nonuniformity of the trench etching rather than the implant step. Although the measurements were made on 100-mm wafers, symmetrical doping should be achievable for all trenches on wafers up to 200 nm in diameter.< >

关键词： Ion beams Implants Doping Very large scale integration Random access memory density estimation robust algorithm Transmission electron microscopy Etching Circuits Capacitors

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It's All in the Plans Maximizing the Benefits and Minimizing the Impacts of DERs in an Integrated Grid

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IEEE POWER & ENERGY MAGAZINE 2015年第2期13卷 20-29页

作者： Smith, Jeff Rylander, Matthew Rogers, Lindsey Dugan, Roger Elect Power Res Inst Knoxville TN 37932 USA

Distribution planners are facing a new reality: the vast majority of new generation currently being connected to the grid is through the distribution system. This ?edge? of the grid, where utilities have the least amount of visibility and controllability, is also where most of the change is occurring. The result is a new set of challenges associated with further integrating these ever increasing levels of distributed energy resources (DERs). To meet these challenges, an integrated approach for planning is needed.

关键词： Planning Voltage control Substations Production Voltage measurement Electricity density estimation robust algorithm

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