Necessary and sufficient conditions are derived for "( A, B )- invariance," called here controlled invariance, for nonlinear systems \dot{x} = f(x, u) . The obtained results generalize and elucidate already ...
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Necessary and sufficient conditions are derived for "( A, B )- invariance," called here controlled invariance, for nonlinear systems \dot{x} = f(x, u) . The obtained results generalize and elucidate already known results about systems \dot{x} = A(x) - \sum \min{i=1}\max{m} =u_{i}B_{i}(x) . A new and direct differential geometric interpretation of the concept of controlled invariance and the derived conditions is given.
The calculation method is especially suited for diffused resistors in integration processes and metal-film resistors in thin-film processes which can be adjusted by laser trimming. The method is based on a special app...
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The calculation method is especially suited for diffused resistors in integration processes and metal-film resistors in thin-film processes which can be adjusted by laser trimming. The method is based on a special application of Green's boundary formula. By modeling the resistor in a special way, the potential problem is reduced to a single-boundary problem. As a consequence, the calculation time and the necessary computer memory are reduced while the accuracy reduction remains small in practical cases. Therefore, the calculation can be carried out on a small computer, making interactive computer design of laser-trimmable resistors on IC layouts more feasible and less expensive. The computing time typically amounts to a few seconds. The method is illustrated by practical examples.
A previously developed time-domain iterative inverse-scattering method is generalized to the problem of reconstructing the susceptibility of an inhomogeneous lossless dielectric slab from frequency-domain reflection d...
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A previously developed time-domain iterative inverse-scattering method is generalized to the problem of reconstructing the susceptibility of an inhomogeneous lossless dielectric slab from frequency-domain reflection data. In subsequent iteration steps, approximations for the electric field inside the slab and the unknown susceptibility profile are obtained by alternately solving an approximate direct-scattering problem and an approximate inverse-scattering problem. Numerical results are presented and discussed.
New symbol for ideal circulator with given impedance matrix is proposed;symbol is used in derivation of equivalent circuits for lumped-element three-port circulator where loss resistances are excluded.
New symbol for ideal circulator with given impedance matrix is proposed;symbol is used in derivation of equivalent circuits for lumped-element three-port circulator where loss resistances are excluded.
A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transisto...
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A sectionalized structure-oriented model is used for the description of the DC behavior of a multicollector integrated injection logic (I/SUP 2/L) gate. The model includes high-injection effects in the p-n-p transistor base and lateral base resistance in the n-p-n transistor. Methods for measuring the base resistance are outlined. The validity of the obtained model is demonstrated by measurement and simulation of two methods of measuring upward current gain.
The sidewalls of trenches on 100-mm wafers were doped by implantation with an implanter whose beam scan is accurately parallel over the whole wafer surface. The doping was characterized with a staining technique and t...
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The sidewalls of trenches on 100-mm wafers were doped by implantation with an implanter whose beam scan is accurately parallel over the whole wafer surface. The doping was characterized with a staining technique and transmission electron microscopy. All the trenches exhibited symmetrical doping, with the main differences between trenches from the center and edge of a wafer being due to nonuniformity of the trench etching rather than the implant step. Although the measurements were made on 100-mm wafers, symmetrical doping should be achievable for all trenches on wafers up to 200 nm in diameter.< >
A relationship between temperature behavior of the resonant frequency F R , the antiresonant frequency F A , and the coupling factor k is given by an equation of the form δF A /F A - δF R /F R = Gδk/k. The factor G...
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A relationship between temperature behavior of the resonant frequency F R , the antiresonant frequency F A , and the coupling factor k is given by an equation of the form δF A /F A - δF R /F R = Gδk/k. The factor G as a function of the coupling factor and the order of overtone is calculated for both piezoelectrically unstiffened and stiffened modes. An application of this relationship yields the curve of turnover temperature versus the coupling factor of X-cut lithium tantalate resonators.
In this note we make some remarks about the general observer problem for nonlinear systems. We show how the existence of a partial observer without stability requirements is locally equivalent to the existence of a co...
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In this note we make some remarks about the general observer problem for nonlinear systems. We show how the existence of a partial observer without stability requirements is locally equivalent to the existence of a conditioned invariant distribution. We argue that by considering not only identity observers we can put the stability issue in a broader perspective.
A chip that performs and evaluates a 16/spl times/16-pixel comparison for application in pattern recognition systems is described. The on-chip data organization and the Wallace-tree evaluation circuits are described. ...
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A chip that performs and evaluates a 16/spl times/16-pixel comparison for application in pattern recognition systems is described. The on-chip data organization and the Wallace-tree evaluation circuits are described. The chip has been realized in a 2-/spl mu/m NMOS process and operated at 18 MHz, thus performing four gigapixel operations per second.
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